JPS6215956B2 - - Google Patents
Info
- Publication number
- JPS6215956B2 JPS6215956B2 JP14936778A JP14936778A JPS6215956B2 JP S6215956 B2 JPS6215956 B2 JP S6215956B2 JP 14936778 A JP14936778 A JP 14936778A JP 14936778 A JP14936778 A JP 14936778A JP S6215956 B2 JPS6215956 B2 JP S6215956B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- column
- level
- row
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 description 26
- 238000001514 detection method Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000007667 floating Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 101150092342 Mmp8 gene Proteins 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
- G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14936778A JPS5577091A (en) | 1978-12-01 | 1978-12-01 | Read-only memory circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14936778A JPS5577091A (en) | 1978-12-01 | 1978-12-01 | Read-only memory circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5577091A JPS5577091A (en) | 1980-06-10 |
JPS6215956B2 true JPS6215956B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-04-09 |
Family
ID=15473581
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14936778A Granted JPS5577091A (en) | 1978-12-01 | 1978-12-01 | Read-only memory circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5577091A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5771589A (en) * | 1980-10-20 | 1982-05-04 | Sanyo Electric Co Ltd | Memory exclusively used for read-out of semiconductor |
US4754436A (en) * | 1986-08-08 | 1988-06-28 | Texas Instruments Incorporated | Sense amplifier for a read only memory cell array |
US5459692A (en) * | 1992-07-07 | 1995-10-17 | Oki Electric Industry Co., Ltd. | Semiconductor memory device and method for reading data therefrom |
-
1978
- 1978-12-01 JP JP14936778A patent/JPS5577091A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5577091A (en) | 1980-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4389705A (en) | Semiconductor memory circuit with depletion data transfer transistor | |
US4485460A (en) | ROM coupling reduction circuitry | |
KR910010526A (ko) | 페이지 소거 가능한 플래쉬형 이이피롬 장치 | |
EP0330852A2 (en) | Decoder/driver circuit for semiconductor memories | |
JPH02125521A (ja) | 半導体装置 | |
EP0186907A2 (en) | Non-volatile semiconductor memory device having an improved write circuit | |
US4635229A (en) | Semiconductor memory device including non-volatile transistor for storing data in a bistable circuit | |
US4259731A (en) | Quiet row selection circuitry | |
US4110840A (en) | Sense line charging system for random access memory | |
JPH0727716B2 (ja) | メモリのデコ−ド・ドライブ回路 | |
US4000429A (en) | Semiconductor circuit device | |
US4870618A (en) | Semiconductor memory equipped with test circuit for testing data holding characteristic during data programming period | |
EP0063357B1 (en) | Drive circuit | |
US3702926A (en) | Fet decode circuit | |
US4785423A (en) | Current limited epld array | |
US4853896A (en) | Write driver circuit of semiconductor memory device | |
US4583202A (en) | Semiconductor memory device | |
EP0060078B1 (en) | Read-only memory device | |
CN1667744B (zh) | 包含单个/多个阈值电压位线的寄存器堆及其使用的方法 | |
US5418748A (en) | Bit line load circuit for semiconductor static RAM | |
JPS6215956B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPH0766675B2 (ja) | プログラマブルrom | |
US4048629A (en) | Low power mos ram address decode circuit | |
US4570239A (en) | Series read-only-memory having capacitive bootstrap precharging circuitry | |
JPS61267992A (ja) | ランダムアクセスメモリ |