JPS62152180A - Manufacture of silicon crystal for solar cell - Google Patents

Abstract

PURPOSE:To change a eutectic metal into an Si crystal for a solar cell by using a traveling zoning method by employing Sn as the eutectic metal to polysilicon having high purity. CONSTITUTION:One end surface of a polysilicon column 1, both end surfaces thereof are flat and parallel, is dipped in Sn under the state of melting, and a uniform Sn film 2 is attached. The lean ground surface of single crystal Si 3 is brought into contact with the Sn film 2, an Sn attached surface A is heated at 90 deg.C and another end surface B at 1,050 deg.C by 4-7, the column is thermally insulated 8, 12 and a heat flow in the column is directed only in the axial direction. Temperature difference in the melt phase is brought to 10 deg.C and an axial temperature gradient to 321 deg.C/cm, and the column is processed at melt-phase travel speed of approximately 7mum/min and a cooling rate in the melt phase of approximately 0.2 deg.C/min. According to the constitution, a crystal available for a substrate for a solar cell is acquired automatically at low cost by means of simple equipment as compared to an FZ method.

Description

DETAILED DESCRIPTION OF THE INVENTION To the present invention (a), the method for producing 1x valence with Norininocho crystal for 11-resistant melon substrates is described. ) In the type reaction Banshiki: rimanuza 2'L Ushihiro Kyoyo Naouse B1 疯田CHO Crystal Enju t11 as J medium (co-partner) Traveling No. 2 Nokuun (1°
Raveli residence OΩ1 country) r is used as a low point by using - 戊士し疋, 觑 Crystal vagina τ attendance and crystal body V こ LUSH return d ゐ.

Polycrystalline solinino? In Naoike, the person who used it to deceive the person, the crystal school world was moxibusted to him, and it became a fake against the fVC, and he also became a strong believer against the small unedged spear. It is not possible to obtain lll1 with a high grain deformation rate for grains with small grain diameters.

Therefore, it is desirable for the crystal calibration to be 500 ym or more for the course.In the case of a crystal with a diameter of 1 + nm or more, its electrical characteristics are determined by using a single crystal and the value of
It's pretty much the same and I'm disappointed.

In the case of high-purity polycrystalline silicon manufactured using the Siemens C-type reaction method mentioned above, the crystal ST1 is generally very small. Trichlorsilane Hiko'ft of Kayutosu ψ
If the pressure is increased or the reaction is carried out at 〃u pressure, the crystal plate f fleas will become even smaller. In this condition, the hammer cannot be made into a polycrystalline silicon-containing battery like a young car.

Therefore, traveling zoning ffi' is used to increase the growth of the crystalline pattern. A second proboscis X'l that is eutectic at one point: Given the temperature gradient, in the diagram explaining the movement of the eel and gourd in the second diagram,
This is a method in which the source crystalline IlJ material that flows in the forward direction is subjected to liquid phase epitaxy onto the following low-temperature substrate crystal via -4 metal. The movement of the acid layer from one end of the crystal to the other progresses automatically depending on the temperature gradient applied to the crystal. 2 In Fig. 2, 2 shows the talrc substrate crystal, (0) shows the Echta thousand layer, l+J shows -Jθ, ldJμ, and so on.

In the present invention, Ken (bnJ
Select all. The reason for this is 1. There are 41 members of the same family as silicon.

11 The fixed + equilibrium relationship is monotonous, and there is no eutectic point.

1. The IZ method has already been widely used industrially as a method of converting a half -4 phase height M1 degree mitative yen to a single crystal departure, which is low and is easy to handle as a C1. In terms of purity, this polycrystal for semiconductors has already reached a state where it is resistant to light.
, it can be said that the purpose of fully adopting iZ@ is not for the purpose of refining, but for the purpose of single crystallization and resistivity matching.

Now, from the point of view of applying the multi-supercrystalline FIEE for semiconductors to the substrate for human #4 batteries, there is no necessity to make it with a single crystal. For this purpose, there is no L on the 7Z floor, 4% in the traveling non-ink method, and there are no quality problems with the eutectic partner and null.

This method is used for the traveling gunning method for this +S*all ML partner, with high @A degree silicon polycrystalline gold for C9b semiconductors per person and one smell! As a base material for use, the grown Shao crystal for M is placed. .

[Compared to the J1°2 method, the electric power can be supplied at a higher quantity rate and more easily, and the t# ridge is useful in reducing the production cost of the desired crystal.

Next, I will explain Risako 6 as an example of the original Akira method.

Actual pole example 1 111 Diameter IQQmm Length 6200 mm) Half 49F
%M product'/Shikon Ensumiyama T-sample is used and its -ft bath is melted at 4 nm t2+, and it is uniformly converted to 4 at the sea surface? r. How many layers? 4 film thickness is 100
~600/'I11 is desirable, 2 samples IIJO
The end surfaces μ between I and V Heiya are drawn in half a line with each other.

12+ Place the above sample into the apparatus shown in the third figure. 'fB7tI on the end face with one layer of polycrystalline cylindrical mountain
14" l f d '7 of single-crystal silicon
Two-ha? , that sharp side! 9 Easy membrane and cutting surface F and go, then the straight fan return layer surface of the cylinder (Mu and Tru) is t9% opposite to the source side - 0 layer surface (assumed to be 8 surface) will be the high temperature side *mg of the entire cylinder, which is maintained by the cylinder isothermal wave gradient.
-c, pressure surface temperature is 90'C, Bi temperature is 1050°C
Keep = 9 and γ;. In addition, according to the figure, (3) Po substrate crystal, 141 (5) L6J 17- is a heater,
(8Jrj: Hanei to isolation, (Sj song is temperature ms
The heat flow is mounted on an insulating board.

(, 3) Heat flow in the cylinder occurs in the axial direction from the 8th surface on the high temperature side j to the A surface on the low temperature side. The surface of the cylinder was insulated.

14 + 5LI (J time when the above state is reached, the Niji, melting m, and U B side VC are far superior, and the entire starting point is in the starting value, crystalline, and the crystal grains are more than ltmn. The one that has calmed down and turned into an ic-like feeling is the 8 feet (1) Not a
The temperature difference between the high temperature side and the low temperature side at the same time is LOT; , □m
One direction temperature IJE Q & CJ 21'L: / c
m and 04 the 7th. With the dedication transfer speed of about 7 k/tech and Yu, the possessed indebted relative got on the phantom LJ, 2°V 1llllQ Te.

The fruit flies IJ2 Ill Melts in the correctional conlicon cr - blows a ring rope into the instep and coexists with the cauldron no view proboscis 1 Komono form VC
After grinding out the threads again, I carried out partial loading of Nrinin, and after that I carried out a long wire with a square rectangular surface.
Then, it was poured into a mold and a rectangular shape was obtained.

(2) Crystal grain growth was carried out by the traveling zoning method in the same manner as in this rolling gold example.

In this case, the impurities mentioned in the prayer are segregated on the introverted surface according to the size of their respective segregation coefficients, and the convergence Evita thousand shields are C refined according to -f:rL. 4.
#1 Festival was held.

[Brief explanation of drawings]

The accompanying drawings are schematic diagrams illustrating the implementation of the method of the present invention, in which Figure 1 is a four-temperature diagram, Figure 2 is a diagram illustrating the movement situation for μm, and Figure 3 is a schematic diagram illustrating the situation. In Figure 2, the blasted crystal, E
IWJ epitaxial layer, IQl is -11 (d) indicates source crystal, 1iJ1 sample, 121 wl
d (,5nJ Ill, LJ rJ substrate crystal %14) 1611ti month 7 no μji 1 (gradient is
Heat, cd &, L! jl ulJ ri li
kL meter, uH engineering heat vrt=m, wri is cut off wP14! L, how many layers of anchor membrane are there, IBI V, 12 sides and the curve of the pair.

Claims (3)

[Claims] (1) When converting polycrystalline silicon, which is produced as a raw material for semiconductor silicon single crystals, into a crystalline substance (polycrystal or single crystal) in which crystal grains have grown, which is useful as a substrate for solar cells, tin A method for producing silicon crystal for solar cells, characterized by using a traveling zoning method using as a eutectic metal. (2) A patent claim characterized in that, instead of high-purity polycrystalline silicon for semiconductors, a rectangular cast body of silicon partially refined by chlorine treatment of metallic silicon is used as the raw material crystal to be processed by the traveling zoning method. A method for producing silicon crystal for solar cells according to scope (1). (3) Temperature conditions for traveling zoning (a)
A patent characterized in that the value of the axial temperature gradient within the melt phase is set to 200 to 650°C/cm. (b) The value of the axial temperature gradient within the epitaxial layer after the melt phase movement is set to 1 to 10°C/cm. Scope of claims (1) (2)
) The method for producing silicon crystal for solar cells described in .