JPS62150865A - Electronic device - Google Patents

Electronic device

Info

Publication number
JPS62150865A
JPS62150865A JP29067485A JP29067485A JPS62150865A JP S62150865 A JPS62150865 A JP S62150865A JP 29067485 A JP29067485 A JP 29067485A JP 29067485 A JP29067485 A JP 29067485A JP S62150865 A JPS62150865 A JP S62150865A
Authority
JP
Japan
Prior art keywords
semiconductor device
heat
leads
heat dissipation
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29067485A
Other languages
Japanese (ja)
Inventor
Hiroshi Tate
宏 舘
Takayuki Okinaga
隆幸 沖永
Masayuki Shirai
優之 白井
Kanji Otsuka
寛治 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi ULSI Engineering Corp
Hitachi Ltd
Original Assignee
Hitachi ULSI Engineering Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi ULSI Engineering Corp, Hitachi Ltd filed Critical Hitachi ULSI Engineering Corp
Priority to JP29067485A priority Critical patent/JPS62150865A/en
Publication of JPS62150865A publication Critical patent/JPS62150865A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4093Snap-on arrangements, e.g. clips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

PURPOSE:To improve the heat dissipation efficiency of a semiconductor device by providing a heat sink member in contact with external leads of the device. CONSTITUTION:The leads 2 of a semiconductor device 1 are connected with bonding wirings 4, and composed of inner leads 2B sealed with sealing member 5 and outer leads 2C projected from the member 5. U-shaped heat sink member 6 in contact with the leads 2C is detachably attached to the device 1. The member 6 is composed of a material having a high thermal conductivity and an insulation. Thus, the member 6 in contact with the leads 2C of the device 1 is provided to enhance the heat sink efficiency of the device 1.

Description

【発明の詳細な説明】 [技術分野] 本発明は、電子装置に関するものであり、特に、半導体
装置に発生する熱の放出技術に適用して有効な技術に関
するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an electronic device, and in particular to a technique that is effective when applied to a technique for dissipating heat generated in a semiconductor device.

[背景技術] プラスチック(レジン)封止型半導体装置は、半導体チ
ップの動作で生じる発熱が電気的特性を不安定にしその
信頼性を低量させる。このため、この種の半導体装置で
は、封止部材及びリードを通して半導体チップの熱を装
置外部に放出している。
[Background Art] In a plastic (resin) sealed semiconductor device, the heat generated by the operation of the semiconductor chip makes the electrical characteristics unstable and reduces its reliability. Therefore, in this type of semiconductor device, the heat of the semiconductor chip is released to the outside of the device through the sealing member and the leads.

発生する熱の半分以上は、封止部材よりも熱抵抗の小さ
なリードを通して、半導体装置の塔載基板(実装基板)
又はプリント配線板に放熱されている。
More than half of the heat generated is passed through the leads, which have lower thermal resistance than the sealing material, to the board on which the semiconductor device is mounted (mounted board).
Or the heat is radiated to the printed wiring board.

熱の放出効率を高めるには、一般的に、封止部材の表面
積を大きくする技術が採用されている。
In order to increase heat release efficiency, a technique is generally employed to increase the surface area of the sealing member.

また、封止部材に放熱フィンを取り付け、封止部材に伝
達された熱を放熱フィンで効率良く放出する技術が採用
されている。
Furthermore, a technique has been adopted in which heat dissipation fins are attached to the sealing member and the heat transferred to the sealing member is efficiently released by the heat dissipation fins.

しかしながら、かかる技術における検討の結果。However, the results of considerations in such technology.

本発明者は、前述の放熱効率を高める技術では、封止部
材の熱抵抗が高いので、充分な熱放出効率を得ることが
できないという問題点を見出した。
The present inventor found that the above-described technique for increasing heat dissipation efficiency has a problem in that sufficient heat dissipation efficiency cannot be obtained because the sealing member has high thermal resistance.

なお、半導体装置に発生する熱を外部に放出する技術に
ついては、例えば、日経エレクトロニクス1984年9
月24日号 p279〜p285に記載されている。
Regarding the technology for releasing heat generated in semiconductor devices to the outside, see Nikkei Electronics, September 1984, for example.
It is described on pages 279 to 285 of the 24th issue of the month.

[発明の目的] 本発明の目的は、半導体装置の熱放出効率を高めること
が可能な技術を提供することにある。
[Object of the Invention] An object of the present invention is to provide a technique that can improve the heat dissipation efficiency of a semiconductor device.

本発明の他の目的は、半導体装置の電気的特性を安定に
し、その信頼性を向上することが可能な技術を提供する
ことにある。
Another object of the present invention is to provide a technique that can stabilize the electrical characteristics of a semiconductor device and improve its reliability.

本発明の前記ならびにその他の目的と新規な特徴は0本
明細書の記述及び添付図面によって明らかになるであろ
う。
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[発明の概要] 本願において開示される発明のうち、代表的なものの概
要を簡単に説明すれば、下記のとおりである。
[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

すなわち、外部リードを有する半導体装置と。That is, a semiconductor device having external leads.

その外部リードに接触される放熱部材とを設ける。A heat dissipating member is provided which is in contact with the external lead.

これにより、半導体チップの熱を封止部材よりも熱抵抗
の小さなリードを通して放熱部材に伝達し、この放熱部
材で効率良く熱を放出することができるので、半導体装
置の熱放出効率を向上することができる。この結果、半
導体装置の電気的特性を安定にし、その信頼性を向上す
ることができる。
This allows the heat of the semiconductor chip to be transferred to the heat dissipation member through the leads, which have a lower thermal resistance than the sealing member, and allows the heat dissipation member to efficiently dissipate heat, thereby improving the heat dissipation efficiency of the semiconductor device. I can do it. As a result, the electrical characteristics of the semiconductor device can be stabilized and its reliability can be improved.

以下1本発明の構成について、本発明を、プラスチック
封止型半導体装置に適用した実施例とともに説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of the present invention will be described below along with an embodiment in which the present invention is applied to a plastic-sealed semiconductor device.

なお、実施例の全図において、同一機能を有するものは
同一符号を付け、そのくり返しの説明は省略する。
In addition, in all the figures of the embodiment, parts having the same functions are given the same reference numerals, and repeated explanations thereof will be omitted.

[実施例1] 本発明の実施例■である電子装置としてのプラスチック
封止型半導体装置を第1図(斜視図)で示し、第1図の
■−■線で切った断面を第2図で示す。なお、第1図は
、本実施例の構成をわかり易くするために、一部を切り
欠いて示している。
[Example 1] FIG. 1 (perspective view) shows a plastic-sealed semiconductor device as an electronic device, which is Example 2 of the present invention, and FIG. Indicated by Note that, in FIG. 1, a portion of the structure of this embodiment is cut away to make it easier to understand.

半導体装置lは、第1図及び第2図で示すように構成さ
れている。すなわち、半導体装1f!1は、タブリード
2Aに塔載された半導体チップ3と。
The semiconductor device 1 is constructed as shown in FIGS. 1 and 2. In other words, semiconductor device 1f! 1 is a semiconductor chip 3 mounted on a tab lead 2A.

ボンディングワイヤ4を介して半導体チップ3に接続さ
れたり−ド2と、それらを封止する封止部材5で構成さ
れている。
It is comprised of a wire 2 connected to a semiconductor chip 3 via a bonding wire 4, and a sealing member 5 for sealing them.

リード2は、ボンディングワイヤ4と接続され。The lead 2 is connected to a bonding wire 4.

封止部材5で封止される内部リード2Bと、実装基板や
プリント配線基板に接続して外部機器に接続される外部
リード2Cとで構成されている。外部リード2Cは、封
止部材5がら突出して設けられている。リード2及びダ
ブリード2Aは、熱抵抗が小さい例えば42アロイ(N
i−Cr合金)、燐青銅で構成されている。
It is composed of an internal lead 2B sealed with a sealing member 5, and an external lead 2C connected to a mounting board or printed wiring board and connected to an external device. The external lead 2C is provided to protrude from the sealing member 5. Lead 2 and double lead 2A are made of, for example, 42 alloy (N
i-Cr alloy), phosphor bronze.

封止部材5は、エポキシ樹脂等のプラスチック材で構成
されている。
The sealing member 5 is made of a plastic material such as epoxy resin.

この半導体装に1には、前記外部リード2cと接触した
コの字形状の放熱部材6が着脱自在に取り付けられてい
る。放熱部材6は、コの字形状の内壁にリード2の弾力
性で半導体装置lに保持されている。この放熱部材6は
、外部リード2Cで伝達された半導体チップ3の動作で
発生する熱を効率良く外部に放出するように構成されて
いる。
A U-shaped heat dissipating member 6 that is in contact with the external lead 2c is detachably attached to this semiconductor device 1. The heat radiating member 6 is held on the semiconductor device 1 by the elasticity of the leads 2 on the U-shaped inner wall. This heat dissipation member 6 is configured to efficiently dissipate heat generated by the operation of the semiconductor chip 3 transferred by the external leads 2C to the outside.

放熱部材6は、熱伝導率が高くしかも絶縁性を有する非
金属1例えば、炭化シリコン、アルミニウムナイトライ
ド、キュービックボロンナイトライドで構成する。また
、放熱部材6は、熱伝導率が高くしかも導電性を有する
金属1例えば、アルミニウム、銅、銀で構成してもよい
。この場合には。
The heat dissipation member 6 is made of a nonmetal 1 having high thermal conductivity and insulating properties, such as silicon carbide, aluminum nitride, and cubic boron nitride. Further, the heat dissipating member 6 may be made of a metal 1 having high thermal conductivity and electrical conductivity, such as aluminum, copper, or silver. In this case.

隣接する外部リード20間が短絡しないように、外部リ
ード2Cと接触する各領域間に絶縁性材料を介在させる
。また、放熱部材6は、アルマイト処理した金属で構成
してもよい。
In order to prevent short circuit between adjacent external leads 20, an insulating material is interposed between each region that contacts the external leads 2C. Further, the heat dissipation member 6 may be made of an alumite-treated metal.

このように、半導体装[1の外部リード2Cに接触する
放熱部材6を設けたことにより、半導体チップ3の熱を
封止部材5よりも熱抵抗の小さなリード2を通して放熱
部材6に伝達し、この放熱部材6で効率良く熱を放出す
ることができるので。
As described above, by providing the heat dissipating member 6 that contacts the external leads 2C of the semiconductor device [1], the heat of the semiconductor chip 3 is transmitted to the heat dissipating member 6 through the leads 2 having a smaller thermal resistance than the sealing member 5, This heat radiating member 6 can efficiently radiate heat.

半導体装置lの熱放出効率を向上することができる。The heat dissipation efficiency of the semiconductor device 1 can be improved.

なお、放熱部材6は、封止部材5の上面と下面を挟み込
んで着脱自在に取り付けられるように構成してもよいし
、又封止部材5に接着剤等で固着してもよい。
Note that the heat dissipation member 6 may be configured to be detachably attached by sandwiching the upper and lower surfaces of the sealing member 5, or may be fixed to the sealing member 5 with an adhesive or the like.

[実施例■] 本実施例■は、塔載基板(実装基板)又はプリント配線
板に塔載された複数のプラスチック型半導体装置に本発
明を適用した本発明の他の実施例である。
[Example 2] Example 2 is another example of the present invention in which the present invention is applied to a plurality of plastic type semiconductor devices mounted on a mounting board (mounting board) or a printed wiring board.

本発明の実施例■であるプラスチック封止型半導体装置
を第3図(斜視図)で示し、第3図のrV−■線で切っ
た断面を第4図で示す。
FIG. 3 (perspective view) shows a plastic-sealed semiconductor device according to Embodiment (2) of the present invention, and FIG. 4 shows a cross section taken along line rV--(2) in FIG.

本実施例■の複数のプラスチック型半導体装置1は、第
3図及び第4図で示すように、塔載基板(又はプリント
配線板)7に実装されている。塔載基板7は、例えば、
炭化シリコン、セラミックで構成されており、その表面
には、アルミニウム、銅等の配線が施されている。
A plurality of plastic type semiconductor devices 1 of this embodiment (2) are mounted on a mounting board (or printed wiring board) 7, as shown in FIGS. 3 and 4. The tower mounting board 7 is, for example,
It is made of silicon carbide and ceramic, and its surface is covered with wiring made of aluminum, copper, etc.

半導体装l1ff1間には、夫々の一側端に規則的に突
出する外部リード2Cと接触する放熱布目6が設けられ
ている。放熱部材6は、熱の放熱面積を大きくするよう
に構成されている。この放熱部材6は、ビス8で塔載基
板7に着脱自在に取り付けられている。
A heat dissipating mesh 6 is provided between the semiconductor devices l1ff1 and comes in contact with external leads 2C that regularly protrude from one side end of each. The heat radiation member 6 is configured to increase the heat radiation area. This heat dissipation member 6 is detachably attached to the tower mounting board 7 with screws 8.

このように、半導体装置1間に外部リード2Cと接触す
る放熱部材6を設けることにより、前記実施例Iと略同
様の効果を得ることができる。
In this manner, by providing the heat dissipating member 6 in contact with the external lead 2C between the semiconductor devices 1, substantially the same effect as in Example I can be obtained.

また、放熱部材6は、第5図(要部断面図)で示すよう
に1弾性部材6Cを介在する2つの放熱部材6A及び6
Bで構成してもよい。このように構成される放熱部材6
は1弾性部材6Cで夫々の放熱部材6A及び6Bが矢印
A及びB方向に移動し、外部リード2Cとの接触を確実
なものにすることができる。
In addition, the heat dissipation member 6 is composed of two heat dissipation members 6A and 6 with one elastic member 6C interposed therebetween, as shown in FIG.
It may be composed of B. Heat dissipation member 6 configured in this way
The heat dissipating members 6A and 6B can be moved in the directions of arrows A and B by the elastic member 6C, thereby ensuring reliable contact with the external lead 2C.

なお、本実施例■では、2つの半導体装置1で1つの放
熱部材6を設けているが、これに限定されず、放熱部材
6の数は、必要な放熱量により適宜選択すればよい。
In this embodiment (2), one heat dissipation member 6 is provided for two semiconductor devices 1, but the present invention is not limited to this, and the number of heat dissipation members 6 may be appropriately selected depending on the required amount of heat dissipation.

[効果] 以上説明、したように、本願において開示された新規な
技術によれば、以下に述べる効果を得ることができる。
[Effects] As explained above, according to the novel technology disclosed in the present application, the following effects can be obtained.

(1)外部リードを有する半導体装置の外部リードに放
熱部材を接触させて設けることにより、半導体チップの
熱を封止部材よりも熱抵抗の小さなリードを通して放熱
部材に伝達し、この放熱部材で効率良く熱を放出するこ
とができるので、半導体装置の熱放出効率を向上するこ
とができる。
(1) By providing a heat dissipation member in contact with the external leads of a semiconductor device having external leads, the heat of the semiconductor chip is transmitted to the heat dissipation member through the leads having a lower thermal resistance than the sealing member, and this heat dissipation member can be used efficiently. Since heat can be effectively radiated, the heat radiating efficiency of the semiconductor device can be improved.

(2)前記(1)により、半導体装置の電気的特性を安
定にし、その信頼性を向上することができる。
(2) According to (1) above, the electrical characteristics of the semiconductor device can be stabilized and its reliability can be improved.

以上、本発明者によってなされた発明を、前記実施例に
基づき具体的に説明したが、本発明は、前記実施例に限
定されるものではなく、その要旨を逸脱しない範囲にお
いて、種々変形し得ることは勿論である。
As above, the invention made by the present inventor has been specifically explained based on the above embodiments, but the present invention is not limited to the above embodiments, and can be modified in various ways without departing from the gist thereof. Of course.

例えば、本発明は、2方向に外部リードが突出するデュ
アルインライン方式のプラスチック封止型半導体装置だ
けでなく、4方向に外部リードが突出するフラットパッ
ケージ方式のプラスチック封止型半導体装置を含む電子
装置に適用することもできる。
For example, the present invention applies not only to a dual-in-line type plastic-sealed semiconductor device with external leads protruding in two directions, but also to an electronic device including a flat-package type plastic-sealed semiconductor device with external leads protruding in four directions. It can also be applied to

また1本発明は、プラスチック封止型半導体装置に限ら
ず、セラミック封止型半導体装置に適用することができ
る。
Furthermore, the present invention can be applied not only to plastic-sealed semiconductor devices but also to ceramic-sealed semiconductor devices.

さらに、本発明は、外部リードに接触する放熱部材と併
せて、封止部材に接触する放熱部材を設けてもよい。
Furthermore, in the present invention, a heat radiating member that contacts the sealing member may be provided in addition to a heat radiating member that contacts the external lead.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の実施例■であるプラスチック封止型
半導体装置の斜視図、 第2図は、第1図の■−■線で切った断面図。 第3図は1本発明の実施例■であるプラスチック封止型
半導体装置の斜視図、 第4図は、第3図のrV−rV線で切った断面図5第5
図は、本発明の実施例■の他の実施例である放熱部材の
要部断面図である。 図中、l・・・半導体装置、2・・リード、2B・・・
内部リード、2C・・・外部リード、3・・・半導体チ
ップ。 4・・・ボンディングワイヤ、5・・・封止部材、6,
6A、6B・・・放熱部材、6C・・・弾性部材である
。 代理人 弁理士 小川勝馬 、7″ 第  1  図 第  2  図 第  3  図 第  4  図 第  5  図
FIG. 1 is a perspective view of a plastic-sealed semiconductor device according to an embodiment (2) of the present invention, and FIG. 2 is a cross-sectional view taken along the line (2)--(2) in FIG. FIG. 3 is a perspective view of a plastic-sealed semiconductor device which is an embodiment of the present invention. FIG. 4 is a cross-sectional view taken along the rV-rV line in FIG.
The figure is a sectional view of a main part of a heat radiating member which is another embodiment of the embodiment (2) of the present invention. In the figure, l: semiconductor device, 2: lead, 2B...
Internal lead, 2C...External lead, 3...Semiconductor chip. 4... bonding wire, 5... sealing member, 6,
6A, 6B... Heat dissipation member, 6C... Elastic member. Agent: Patent Attorney Katsuma Ogawa, 7″ Figure 1 Figure 2 Figure 3 Figure 4 Figure 5

Claims (1)

【特許請求の範囲】 1、封止部材から外部に突出する外部リードを有する半
導体装置と、放熱部材を前記外部リードに接触させた放
熱部材とを持つことを特徴とする電子装置。 2、前記放熱部材は、半導体装置本体又は半導体装置を
塔載する基板に設けたことを特徴とする特許請求の範囲
第1項に記載の電子装置。 3、前記放熱部材は、一部の外部リード又は全部の外部
リードと接触していることを特徴とする特許請求の範囲
第1項に記載の電子装置。 4、前記放熱部材は、熱伝導率の高い絶縁性材料で構成
したことを特徴とする特許請求の範囲第1項に記載の電
子装置。 5、前記放熱部材は、他の外部リードと電気的に分離さ
れた熱伝導率の高い導電性材料で構成したことを特徴と
する特許請求の範囲第1項に記載の電子装置。
[Scope of Claims] 1. An electronic device comprising: a semiconductor device having external leads protruding from a sealing member; and a heat dissipating member having a heat dissipating member in contact with the external leads. 2. The electronic device according to claim 1, wherein the heat dissipation member is provided on a semiconductor device body or a substrate on which the semiconductor device is mounted. 3. The electronic device according to claim 1, wherein the heat dissipation member is in contact with some or all of the external leads. 4. The electronic device according to claim 1, wherein the heat radiating member is made of an insulating material with high thermal conductivity. 5. The electronic device according to claim 1, wherein the heat dissipation member is made of a conductive material with high thermal conductivity that is electrically isolated from other external leads.
JP29067485A 1985-12-25 1985-12-25 Electronic device Pending JPS62150865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29067485A JPS62150865A (en) 1985-12-25 1985-12-25 Electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29067485A JPS62150865A (en) 1985-12-25 1985-12-25 Electronic device

Publications (1)

Publication Number Publication Date
JPS62150865A true JPS62150865A (en) 1987-07-04

Family

ID=17759026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29067485A Pending JPS62150865A (en) 1985-12-25 1985-12-25 Electronic device

Country Status (1)

Country Link
JP (1) JPS62150865A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047837A (en) * 1988-08-15 1991-09-10 Hitachi, Ltd. Semiconductor device with heat transfer cap

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047837A (en) * 1988-08-15 1991-09-10 Hitachi, Ltd. Semiconductor device with heat transfer cap

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