JPS62149168A - High speed ccd - Google Patents
High speed ccdInfo
- Publication number
- JPS62149168A JPS62149168A JP28989585A JP28989585A JPS62149168A JP S62149168 A JPS62149168 A JP S62149168A JP 28989585 A JP28989585 A JP 28989585A JP 28989585 A JP28989585 A JP 28989585A JP S62149168 A JPS62149168 A JP S62149168A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- electrode
- embedded layer
- high speed
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明けＣＯＤの構造に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to the structure of COD.
本発明はｃｃ’ｎに於て、半導体基板極性と異なる極性
の埋め込み層がｔ極上に形成されている事を特徴とする
。The present invention is characterized in that in cc'n, a buried layer having a polarity different from that of the semiconductor substrate is formed on the t pole.
従来、ＣＯＤは、第２図にその要部の断面と動作状況を
示す如く、５１１１の表面には酸化膜１３が形成され、
該酸化１ｊ莫１５上にはｔ極１４が形成され、該戒（做
１４のＡ、Ｂに印加する電圧を変化させ、８１１１内に
ポテンシャル５の如きポテンシャル５の如きポテンシャ
ルの傾斜を形成しチャージ６をＫｆｆｉＡ下から電極Ｂ
下へ移動させるのを基本としている。Conventionally, COD has an oxide film 13 formed on the surface of 5111, as shown in FIG.
A t-pole 14 is formed on the oxidation layer 15, and by changing the voltage applied to A and B of the oxidation layer 14, a potential gradient such as potential 5 such as potential 5 is formed in 8111, and a charge is generated. 6 from below KffiA to electrode B
The basic idea is to move it downwards.
〔発明が解決しようとする問題点及び目的〕しかし、上
記従来技術によると、 １１Ｌｓ下間を移動するチャー
ジの移動速度が遅く、且つ移動効率が悪いという問題点
があった。[Problems and Objects to be Solved by the Invention] However, according to the above-mentioned prior art, there was a problem that the moving speed of the charge moving between the 11Ls was slow and the moving efficiency was poor.
本発明は、かかる従来技術の問題点をなくし、高速で且
つチャージの移動効率の良いＣＯＤ構造を提供する事を
目的とする。It is an object of the present invention to eliminate the problems of the prior art and to provide a COD structure that is high-speed and has good charge transfer efficiency.
上記問題点を解決するために、本発明はＯＣＤに於て、
半導体基板極性と異なる極性の埋込み１−ｔ′電電極−
形成する手段金とる。In order to solve the above problems, the present invention provides for OCD,
A buried 1-t' electrode with a polarity different from that of the semiconductor substrate.
The means to form it takes money.
本発明の如＜ＣＯＤに於て、半導体基板極性と異なる極
性の埋込み層を電極下に形成することにより、該埋込み
ｌＩ＃の低抵抗を通して、チャージが高速で移動できる
作用があると共に、チャージの移動速度が速い事は、結
果的に転送効率を上げる作用につながることとなる。According to the present invention, in COD, by forming a buried layer with a polarity different from that of the semiconductor substrate under the electrode, the charge can move at high speed through the low resistance of the buried lI#. Faster moving speed ultimately leads to an effect of increasing transfer efficiency.
［実施ｙ１］〕 以下、実施例により本発明を詳述する。[Implementation y1]] Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す要部の断面と動作状況
を示す図である。すなわち、ＳｉＩ内にはＳｉ１と異な
る極性を有する埋込み層２が形成され、前記Ｓｉ１０表
面には酸化膜５，１極４が形成され、該電極４のＡ、Ｂ
に電位の異なる′成圧をかけてポテンシャル５に傾斜を
もたせチャージ６を移動させる。この場合、礪Ａｈａの
Ａ下のチャージは、埋め込み層２にためられ、を極４の
Ｂ下のポテンシャルを深くすることにより埋め込み層２
全通してチャージが高速でかつ効率良く転位する事とな
る。FIG. 1 is a diagram showing a cross section of a main part and an operating state of an embodiment of the present invention. That is, a buried layer 2 having a polarity different from that of Si1 is formed in SiI, and an oxide film 5 and one electrode 4 are formed on the surface of the Si10, and A and B of the electrode 4 are formed.
By applying a pressure with a different potential to the potential 5, the charge 6 is moved. In this case, the charges under A of Aha are stored in the buried layer 2, and by deepening the potential under B of the pole 4, the charges in the buried layer 2 are stored.
Throughout the process, the charge is transferred at high speed and efficiently.
本発明の如く、ＣＯＤに於て半導体基板極性と異なる極
性の埋め込みｊ−を１煉ドにｆ／成することにより、高
速かつ転送効率の艮いｃａｐが裏作できる効果がある。As in the present invention, in the COD, by forming a buried j- with a polarity different from the semiconductor substrate polarity in one layer f/, a cap with high speed and high transfer efficiency can be produced.
更に、本発明を例λは直列配列ＣＯＤの一ノーの誦速化
を計るために１゛α列配列Ｃ’ＣＤを分、！）＋１ し
て動作させる回路構成場合の分割ＣＯＤからの並列ＣＯ
Ｄへの儒号取り出し部の本発明を適用する事により、前
記回路構成の一層の高速化を効率的にかつ容易に行なわ
すことが出来る効果がある。Furthermore, in the present invention, in order to speed up the reading speed of the series array COD, λ is divided into 1゛α column array C'CD,! ) +1 Parallel CO from divided COD in the case of a circuit configuration that operates with
By applying the present invention to the Confucian code extraction unit to D, there is an effect that the speed of the circuit configuration can be further increased efficiently and easily.
第１図は本発明を説明するための埋め込み層を肩するＣ
ＯＤの断面図であり、第２図は従来技術によるＣＣＤの
断面図。
１．１１・・・Ｓｌ
２・・・・・・・・・・・・埋め込み層６ 、 １３
・・・酸ｆヒ模
４．１４・・・通（傘
５．１５・・・ポテンシャル
６．１６・・・チャージ
以 上Figure 1 shows a C
FIG. 2 is a cross-sectional view of an OD, and FIG. 2 is a cross-sectional view of a CCD according to the prior art. 1.11...Sl 2...Buried layer 6, 13
...acid fhi model 4.14...through (umbrella 5.15...potential 6.16...charge or more
Claims (1)
されている事を特徴とする高速ＣＣＤ。A high-speed CCD characterized in that a buried layer with a polarity different from that of a semiconductor substrate is formed under an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28989585A JPS62149168A (en) | 1985-12-23 | 1985-12-23 | High speed ccd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28989585A JPS62149168A (en) | 1985-12-23 | 1985-12-23 | High speed ccd |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62149168A true JPS62149168A (en) | 1987-07-03 |
Family
ID=17749153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28989585A Pending JPS62149168A (en) | 1985-12-23 | 1985-12-23 | High speed ccd |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62149168A (en) |
-
1985
- 1985-12-23 JP JP28989585A patent/JPS62149168A/en active Pending
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