JPS62148966A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPS62148966A JPS62148966A JP28590086A JP28590086A JPS62148966A JP S62148966 A JPS62148966 A JP S62148966A JP 28590086 A JP28590086 A JP 28590086A JP 28590086 A JP28590086 A JP 28590086A JP S62148966 A JPS62148966 A JP S62148966A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- photosensitive layer
- photosensitive
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は光励起キャリヤの注入効率の増加による光減衰
特性の改善及び機械的強度の増加を可能とする電子写真
用感光体に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an electrophotographic photoreceptor that can improve optical attenuation characteristics and increase mechanical strength by increasing the injection efficiency of photoexcited carriers.
（従来の技術）
第２図（ａ）及び（ｂ）に従来の感光体の断面図を示す
。(Prior Art) FIGS. 2(a) and 2(b) show cross-sectional views of a conventional photoreceptor.
第２図（ａｌにおいて、１は厄光層であり、２は金属電
極である。感光層１の表面を正又は負に帯電させる。こ
れに光を照射すると、感光層１に光キャリヤが発生、こ
のキャリヤの移動により光のあたった部分のみ、帯電し
た電荷が短絡される。−力先のあたらない部分は帯電し
た電荷を保持しここに電荷・Ｐターンが形成される。こ
のため、感光層１は暗所では高抵抗（抵抗率１．０１２
Ω−鑞以上）で、光のあたった場合には抵抗の小さくな
る光導電効果の大きな材料でなければならない。通常は
非晶質セレン系が使用されている。この様な構造の場合
、感光層１に入射する光は表面の極く薄い層（数千Ｘ）
で完全に吸収されてしまう。通常感光層１の膜厚は１０
〜５０ ｔｔｍであるが、表面を除いた残りのほとんど
の部分は帯電時の保持電圧を高くするために使用されて
いる。この様な構成の感光体は非晶質セレンの様な抵抗
率の高い（１０１５〜１０１６Ω−ＣＴＬ）材料を使用
した場合には、比較的容易に作製できるが、非晶質セレ
ン系の感光材よりも光導電効果が大きく機械的、熱的に
安定であって抵抗率の低い材料、たとえば非晶質水素化
シリコン（その抵抗率はノンドープで１０’〜１ｏ１１
Ω−Ｃ７ｎ）を用いた場合、暗減衰の時定数が小さくな
りずきて、感光体を実現することが困難である。非晶質
水素化シリコンについては、これにホウ素をわずかにド
ープすることによって抵抗率を約１ｏ１３Ω−確まで高
める事が可能であるがこの近傍で抵抗率を正確に制御す
る事は困難であり、又光導電効果が悪くなり感光体の特
性の設計性はあまりよくない。In Figure 2 (al), 1 is a light emitting layer and 2 is a metal electrode. The surface of the photosensitive layer 1 is charged positively or negatively. When light is irradiated onto this, photocarriers are generated in the photosensitive layer 1. As a result of this movement of carriers, the charged charges are short-circuited only in the areas that are exposed to the light. - The areas that are not affected by the force retain the charged charges and a charge/P-turn is formed there. Layer 1 has high resistance in the dark (resistivity 1.012
It must be made of a material with a high photoconductive effect, which reduces resistance when exposed to light. Amorphous selenium is usually used. In the case of such a structure, the light incident on the photosensitive layer 1 is transmitted through an extremely thin layer (several thousand times) on the surface.
completely absorbed. Normally, the film thickness of photosensitive layer 1 is 10
~50 ttm, but most of the remaining part except the surface is used to increase the holding voltage during charging. A photoreceptor with such a structure can be produced relatively easily when using a material with high resistivity (1015 to 1016 Ω-CTL) such as amorphous selenium. Materials that have a greater photoconductive effect, are mechanically and thermally stable, and have a lower resistivity, such as amorphous hydrogenated silicon (its resistivity is 10' to 1011 without doping).
When using Ω-C7n), the time constant of dark decay becomes small, making it difficult to realize a photoreceptor. As for amorphous hydrogenated silicon, it is possible to increase the resistivity to about 1013Ω by doping it slightly with boron, but it is difficult to accurately control the resistivity in this vicinity. In addition, the photoconductive effect deteriorates, and the characteristics of the photoreceptor are not very well designed.
又、より長波長の光に対して高い感度を有する祠料は光
学的バンドギャップが小さく、従って高抵抗には、なり
にくいために、そのままでは電子写真用感光体として使
用できない。非晶質水素化シリコンについては、第２図
（ｂ）に示す様なブロッキング層を用いる事によって帯
電特性を改善する事も提案されている。即ち３は数μｍ
のノンドープの非晶質水素化シリコン層で、この表面近
くで光が吸収される。４はブロッキング層であり正帯電
に対してはｐ型、負帯電に対してはｎ型の非晶質水素化
シリコン層を用いる。ブロッキング層４により電極金属
５からのキャリヤの注入をおさえて、帯電特性を改善さ
せている。Furthermore, abrasive materials that are highly sensitive to light with longer wavelengths have a small optical bandgap and are therefore less likely to have high resistance, so they cannot be used as they are as electrophotographic photoreceptors. Regarding amorphous hydrogenated silicon, it has also been proposed to improve the charging characteristics by using a blocking layer as shown in FIG. 2(b). In other words, 3 is several μm
The light is absorbed near the surface of the undoped amorphous hydrogenated silicon layer. 4 is a blocking layer, which is a p-type amorphous hydrogenated silicon layer for positive charging and an n-type amorphous silicon layer for negative charging. The blocking layer 4 suppresses injection of carriers from the electrode metal 5 to improve charging characteristics.
（従来技術の問題点）
しかしながら、この構造による場合も、さらに長波長側
に高感度を有する光学的バンドギャップの小さな材料の
場合には帯電特性を改善することは困難であるという問
題点があった。(Problems with the prior art) However, even with this structure, there is a problem in that it is difficult to improve the charging characteristics when using a material with a small optical bandgap that has high sensitivity on the longer wavelength side. Ta.
そどで、この発明の目的は感光体の暗減衰、光減衰の特
性の改善及び機械的強度の増加を可能とするものである
。Therefore, an object of the present invention is to make it possible to improve the dark decay and light decay characteristics and increase the mechanical strength of a photoreceptor.
（問題点を解決するだめの手段）
本発明は前記問題点を解決するために、非晶質水素化シ
リコンから成る感光層と、表面側に非晶質水素化シリコ
ンカーバイトから成る電荷保持層又は表面層と、を分離
形成し、前記両層間には前記両層を形成する２つの物質
の組成比を変化させた化合物から成る傾斜層を設けたも
のである。(Means for Solving the Problems) In order to solve the above problems, the present invention provides a photosensitive layer made of amorphous hydrogenated silicon, and a charge retention layer made of amorphous hydrogenated silicon carbide on the surface side. Alternatively, the surface layer and the surface layer are formed separately, and a graded layer made of a compound in which the composition ratio of the two substances forming the two layers is changed is provided between the two layers.
（作用）
以上の様に本発明によれば、電荷保持層を形成する非晶
質水素化シリコンカーバイトは光学的バンドギャップが
２〜３ ｅＶと非晶質水素化シリコンより約１ｅＶ大き
いので非晶質水素化シリコンの光感度の高い６０００２
前後の波′長の光に対しては透明であり、この波長の光
は電荷保持層及び傾斜層を透過し内部の感光層で吸収さ
れる。また、非晶質水素化シリコンカーバイトの抵抗率
はノンドーグで１０〜１０ Ω−儂と大きいため感光層
の抵抗率が１０〜１０Ω−儂と小さい場合にも帯電特性
を実用レベルに設定する事が可能である。(Function) As described above, according to the present invention, the amorphous hydrogenated silicon carbide forming the charge retention layer has an optical band gap of 2 to 3 eV, which is about 1 eV larger than the amorphous hydrogenated silicon, so it is not Crystalline hydrogenated silicon with high photosensitivity 60002
It is transparent to light of the preceding and succeeding wavelengths, and the light of this wavelength is transmitted through the charge retention layer and the gradient layer and absorbed by the internal photosensitive layer. In addition, since the resistivity of amorphous hydrogenated silicon carbide is as high as 10 to 10 Ω-4 in non-dough, it is necessary to set the charging characteristics to a practical level even when the resistivity of the photosensitive layer is as low as 10-10 Ω-2. is possible.
また、非晶質水素化シリコンから成る感光層と、非晶質
水素化シリコンカーバイトから成る電荷保持層との間に
、両層を形成する２つの物質の組成比を変化させた化合
物から成る傾斜層を設けているので、光キャリヤの注入
効率の低下を防ぐことができ、且つ感光層と電荷保持層
との界面の界面準位がへり、電荷保持層と感光層との付
着強度が増し熱サイクルの安定性が増す。In addition, between the photosensitive layer made of amorphous hydrogenated silicon and the charge retention layer made of amorphous hydrogenated silicon carbide, a compound is formed by changing the composition ratio of the two substances forming both layers. Since the gradient layer is provided, it is possible to prevent a decrease in the injection efficiency of photocarriers, and the interface state at the interface between the photosensitive layer and the charge storage layer is reduced, increasing the adhesion strength between the charge storage layer and the photosensitive layer. Increased thermal cycle stability.
（実施例）
第１図（ａ）及び（ｂ）は本発明の詳細な説明するため
の電子写真用感光体の断面図であり、以下図面を用いて
詳細に説明する。(Example) FIGS. 1(a) and 1(b) are cross-sectional views of an electrophotographic photoreceptor for explaining the present invention in detail, and will be explained in detail below using the drawings.
第１図（ａ）は本発明の第１の実施例であって、６及び
７は非晶質水素化シリコンカーバイトからなる電荷保持
層、８は非晶質水素化シリコンからなる感光層、９及び
１０は非晶質水素化シリコンと非晶質水素化シリコンカ
ーバイトの化合物（ａ−８ｉｘＣ１−Ｘ：Ｈ）からなる
層（以下″傾斜層”と呼ぶ）、１ノは電極金属である。FIG. 1(a) shows a first embodiment of the present invention, in which 6 and 7 are charge retention layers made of amorphous hydrogenated silicon carbide, 8 is a photosensitive layer made of amorphous hydrogenated silicon, 9 and 10 are layers (hereinafter referred to as "graded layer") consisting of a compound of amorphous hydrogenated silicon and amorphous hydrogenated silicon carbide (a-8ixC1-X:H), and 1 is an electrode metal. .
非晶質水素化シリコンカーバイト（以下ａ−８ｉＣ：Ｈ
という）は光学的バンドギャップが２〜３ｅＶと非晶質
水素化シリコン（以下ａ−８ｉ ：Ｈという）より約１
ｅＶ大きいのでａ−８ｉ ：Ｈの光感度の高い６０００
Ｘ前後の波長の光に対しては透明である。そこでこの波
長の光は電荷保持層６及び傾斜層９を透過し内部の感光
層８で吸収される。ここで感光層８の厚みはａ−８ｉ
：Ｈの吸収係数が６０００Ｘの光に対して非常に大きい
ので数千Ｘあれば十分である。−万電荷保持層６及び７
を形成するａ−８ｉＣ：Ｈの抵抗率がノンドープで１０
１５〜１０ Ω−鋸と大きいため感光層８の抵抗率が１
０８〜１０Ω−副と小さい場合にも帯電特性全実用レベ
ルに設定する事が可能である。さてこの感光体表面に帯
電された電荷は、光照射をうけた部分で１感光層８に吸
収さ′ｉ′シた光により発生した電子ｊＩＥ孔対が傾斜
層９及び１θを通Ｉ２て、電荷保持層６及び７に注入さ
れる事で消去される。（―の際感光層８から電荷［呆持
層６及び７への光ギヤリヤの」入効率が感光体としての
明滅ｐ特ｉ＜ｂ ｈ−決定する事となる。今傾斜層９及
び１０のない場合を・考えると、感″Ｌ層８と電荷保持
層６．７との間の光学的バンドギャップ及び電子親和力
が異なるため、この接合し１アイソタイプへテロ接合と
なり、ここに電子及びｊ「孔に対する障壁が発生する。Amorphous hydrogenated silicon carbide (hereinafter a-8iC:H
) has an optical band gap of 2 to 3 eV, which is approximately 1
Since eV is large, a-8i: 6000 with high photosensitivity of H
It is transparent to light with wavelengths around X. Therefore, light of this wavelength passes through the charge retention layer 6 and the gradient layer 9 and is absorbed by the photosensitive layer 8 inside. Here, the thickness of the photosensitive layer 8 is a-8i
Since the absorption coefficient of :H is very large for light of 6000X, several thousand X is sufficient. -10,000 charge retention layers 6 and 7
The resistivity of a-8iC:H that forms is 10 without doping.
15 to 10 Ω - Because it is so large, the resistivity of the photosensitive layer 8 is 1.
Even when the resistance is as small as 08 to 10Ω, it is possible to set the charging characteristics to all practical levels. Now, the electric charge on the surface of the photoreceptor is generated by the electron jIE hole pair generated by the light absorbed by the photosensitive layer 8 in the irradiated area and passing through the inclined layer 9 and 1θ. It is erased by being injected into the charge retention layers 6 and 7. (In the case of -, the input efficiency of charge from the photosensitive layer 8 [of the light gear to the holding layers 6 and 7] determines the flickering of the photoreceptor. Considering the case where the photosensitive layer 8 and the charge retention layer 6.7 have different optical band gaps and electron affinities, this junction becomes a 1 isotype heterojunction, where electrons and A barrier to pores is created.
この障壁、＋５テンシヤルは感光層８から電荷保持層６
への尤キャリヤの注入を阻害し、従って注入効率の低下
、明減衰特性の劣化を寸ね〈。そこでこの感光層８と電
荷保持層６との間、並びに感光層８と′電荷保持層７と
の間にａ−３ｉ：Ｔ（とａ −Ｓ ｉ Ｃ： Ｈの化合
物であるａ−８１ｘＣ１−ｘ：■Ｉで形成される傾斜層
９及び１０全挿入する事でこの劣化をふせぐものである
。This barrier, +5 tensile, is from the photosensitive layer 8 to the charge retention layer 6.
This impedes the injection of potential carriers into the cell, thus reducing injection efficiency and deteriorating bright attenuation characteristics. Therefore, between the photosensitive layer 8 and the charge retention layer 6, and between the photosensitive layer 8 and the charge retention layer 7, a-3i:T (and a-81xC1- which is a compound of a-SiC:H) is formed. This deterioration is prevented by fully inserting the sloped layers 9 and 10 formed by x: ■I.
この傾斜層９，１０はａ−８ｉ：Ｈｌｊｌりでｘ ＝
１、ａ−８ｉＣ：Ｈ側でＸ二０．５と１７だものでこれ
によりアイソタイプへテロ接合による障壁ポテンシャル
は発生ｔ−）−Ｊ’、電荷保持層６から傾斜層１０、電
荷保持層７への尤ギヤリヤの注入効率の低下を防ぐこと
が出来る。These gradient layers 9 and 10 are a-8i:Hljl, and x =
1, a-8iC: X20.5 and 17 on the H side, which generates a barrier potential due to isotype heterojunction t-)-J', charge retention layer 6 to gradient layer 10, charge retention layer 7 It is possible to prevent a drop in the injection efficiency of the gear.
又感光層８と電荷保持層６．７とでは原子間距離及び熱
膨張係数が異なるため、又傾斜層１ｏがなければ感光層
８と電荷保持層６，７との界面に界面準位が発生しトラ
ップレベルとして光キャリヤの注入効率を劣化させる。In addition, since the interatomic distance and thermal expansion coefficient are different between the photosensitive layer 8 and the charge retention layers 6 and 7, interface states will be generated at the interface between the photosensitive layer 8 and the charge retention layers 6 and 7 if the gradient layer 1o is not present. This decreases the optical carrier injection efficiency as a trap level.
さらにこの違いは感光層８と電荷保持層６，７の付着強
度及び熱サイクルに対する安定性に問題を生じる。又傾
斜層１０をもうけることで、原子間距離及び熱膨張係数
が不連続な界面が存在しなくなるため、界面準位の発生
をおさえる事が出来る。又これにより感光層８と電荷保
持層６，７との付着強度は増加し、熱ザイクルに対して
も安定となる。Furthermore, this difference causes problems in the adhesion strength between the photosensitive layer 8 and the charge retention layers 6 and 7 and the stability against thermal cycles. Further, by providing the graded layer 10, there is no interface where the interatomic distance and thermal expansion coefficient are discontinuous, so it is possible to suppress the generation of interface states. Moreover, this increases the adhesion strength between the photosensitive layer 8 and the charge retention layers 6 and 7, and makes it stable against thermal cycle.
以上説明Ｉ〜だ様に、第１の実施例では感光層材料の抵
抗率が小さくて、その材料単独では電子写真に使用でき
ない場合にも、電荷保持層６．７をもうける事で暗減衰
特性を改善し、且つヘテロ接合の存在による光ギヤリヤ
注入効率の劣化全傾斜層９．１０’ｚもうけて阻１１−
す、る事で電子写真用感光体としで使用する事ができる
。さらに傾斜層９゜１０により機械的強度を増加する事
も出来る。As explained above, in the first embodiment, even if the resistivity of the photosensitive layer material is so low that it cannot be used alone for electrophotography, the dark decay characteristic can be improved by providing the charge retention layer 6.7. and prevent the deterioration of optical gear injection efficiency due to the presence of heterojunctions by creating a total gradient layer 9.10'z.
By doing so, it can be used as a photoreceptor for electrophotography. Furthermore, the mechanical strength can be increased by the gradient layer 9°10.
第１の実施例においては抵抗率の小さい感光体を、使用
するために電荷保持層と感光層を分離した場合について
のべたが、第１図（ｂ）は本発明の第２の実施例であり
、第１図（ｂ）に示す如き構成においても同様の効果を
生じる。第４図において、１２は反射防ＩＩ−及び表面
保護のためにもうけられた表面層でここではａ−８ｉＣ
：Ｈであり、１３はホウ素又は酸素をドープする事で得
られた高抵抗率を有するａ−８ｉ ：Ｈからなる感光層
であり、１４Ｉｉ電極金属である。１５はａ−８ｉＣ：
Ｉ（とａ−８ｉ：Ｈの化合物であるａ −Ｓ ｉＸＣ１
−Ｘ： Ｈからなる傾斜層で組成比Ｘは傾斜層１５と表
面層１２との界面で０．５＋傾斜層１５と感光層１３と
の界面で１．０としである。表面層１２の表面に帯電し
た電荷は、表面層１２゜感光層１３．傾斜層１５により
保持される。第１の実施例と異なり、感光層１３は高抵
抗であるため、表面層１２の厚みは使用する光の波長で
反射防止効果を有する値に設定できる。入射した元は表
面層１２及び傾斜層１５ｆ透過し１感元層１３の感光層
１３と傾斜層１５との界面近傍で吸収され電子正孔対全
作る。生成された光キャリヤは表面層ノ２及び感光層１
３に注入されて表面に帯電した電荷全消去して、電荷ノ
にターンを形成する。In the first embodiment, the case where the charge retention layer and the photosensitive layer are separated in order to use a photoreceptor with low resistivity is described, but FIG. The same effect can be obtained even in the configuration shown in FIG. 1(b). In Fig. 4, 12 is a surface layer provided for anti-reflection II- and surface protection; here, a-8iC
:H, 13 is a photosensitive layer made of a-8i :H having high resistivity obtained by doping with boron or oxygen, and 14Ii is an electrode metal. 15 is a-8iC:
a-S iXC1 which is a compound of I (and a-8i:H
-X: In the gradient layer made of H, the composition ratio X is 0.5 at the interface between the gradient layer 15 and the surface layer 12 and 1.0 at the interface between the gradient layer 15 and the photosensitive layer 13. The charges on the surface of the surface layer 12 are transferred to the surface layer 12.degree. photosensitive layer 13. It is held by the inclined layer 15. Unlike the first embodiment, since the photosensitive layer 13 has a high resistance, the thickness of the surface layer 12 can be set to a value that provides an antireflection effect at the wavelength of the light used. The incident source passes through the surface layer 12 and the inclined layer 15f and is absorbed near the interface between the photosensitive layer 13 and the inclined layer 15 of the one-sensing source layer 13, creating all electron-hole pairs. The generated photocarriers are transferred to the surface layer No. 2 and the photosensitive layer No. 1.
3, the charges charged on the surface are completely erased and a turn is formed on the charges.
傾斜層１５が存在（−ない場合には、表面層１２と感光
層１３０間にアイソタイプのへテロ接合が出来、障壁ポ
テンシャルにより光キャリヤの注入効率が劣化するが、
傾斜層１５の存在によってヘテロ接合は消失するために
光キャリヤ注入効率の劣化全ふせぐ事ができる。又傾斜
層１５により界面準位がへり、表面層１２と感光層１３
の句着強度が増し熱サイクルの安定性が増す。If the gradient layer 15 is present (-), an isotype heterojunction will be formed between the surface layer 12 and the photosensitive layer 130, and the efficiency of optical carrier injection will deteriorate due to the barrier potential.
Because the heterojunction disappears due to the presence of the gradient layer 15, the deterioration of the optical carrier injection efficiency can be completely suppressed. Also, the interface level is lowered by the inclined layer 15, and the surface layer 12 and the photosensitive layer 13
The strength of the bond increases and the stability of thermal cycles increases.
以上説明した様に、第２の実施例では感光層上に反射防
止及び表面保護のための膜をも５けた場合にも傾斜層１
５をもうける事で光キャリヤの注入効率の劣化を阻止し
、機械的強度の増加をはかる事が可能となる。本発明に
より異種接合を有した電子写真用感光体においても光励
起キャリヤの注入効率増加による光減衰特性め改善及び
機械的強度の増加が可能となるので、光プリンタ、電子
複写機の感光体としての使用が可能となる。As explained above, in the second embodiment, even when five films are provided on the photosensitive layer for antireflection and surface protection, the gradient layer 1
By adding 5, it is possible to prevent the deterioration of the optical carrier injection efficiency and increase the mechanical strength. According to the present invention, it is possible to improve optical attenuation characteristics and increase mechanical strength by increasing the injection efficiency of photoexcited carriers even in electrophotographic photoreceptors having dissimilar junctions. It becomes possible to use it.
（発明の効果）
以上詳細に説明したように、本発明によれば異種接合を
有した電子写真用感光体においても、光励起キャリヤの
注入効率増加による光減衰特性の改善及び機械的強度の
増加が可能となり、光プリンタ、電子複写機の感光体と
［７ての使用が可能となる。(Effects of the Invention) As described in detail above, according to the present invention, even in an electrophotographic photoreceptor having a heterojunction, the optical attenuation characteristics can be improved and the mechanical strength can be increased by increasing the injection efficiency of photoexcited carriers. This makes it possible to use it as a photoreceptor in optical printers and electronic copying machines.
第１図（ａ）及び（ｂ）は本発明の詳細な説明するため
の感光体の断面図、第２図（ａ）及び（ｂ）は従来の感
光体の断面図である。
１・・・感光層、２・・・電極金属、３・・・感光層、
４・・・ブロッキング層、５・・・電極金属、６，７・
・・電荷保持層、８・・・感光層、９，１０・・・傾斜
層、１ノ・・・電極金属、１２・・・表面層、１３・・
・感光層、１４・・・電極金属、１５・・・傾斜層。
本発明実バ七り１）の壱〜九体のか面面第１図
省を条のも角ｉイ木の ９１１°ぷ行匹り第２図1A and 1B are cross-sectional views of a photoreceptor for explaining the present invention in detail, and FIGS. 2A and 2B are cross-sectional views of a conventional photoreceptor. DESCRIPTION OF SYMBOLS 1... Photosensitive layer, 2... Electrode metal, 3... Photosensitive layer,
4... Blocking layer, 5... Electrode metal, 6,7.
... Charge retention layer, 8... Photosensitive layer, 9, 10... Gradient layer, 1... Electrode metal, 12... Surface layer, 13...
- Photosensitive layer, 14... Electrode metal, 15... Gradient layer. Figure 1 of the 1st to 9th faces of the present invention's actual product 7ri 1) Figure 2
Claims (1)
質水素化シリコンカーバイトから成る電荷保持層又は表
面層と、非晶質水素化シリコンカーバイトから成る該電
荷保持層又は表面層と非晶質水素化シリコンから成る感
光層との間に組成比を変化させた２つの物質の化合物の
層と、を少なくとも備えてなることを特徴とする電子写
真用感光体。a photosensitive layer made of amorphous hydrogenated silicon; a charge retention layer or surface layer made of amorphous hydrogenated silicon carbide on the surface side; and the charge retention layer or surface layer made of amorphous hydrogenated silicon carbide. and a photosensitive layer made of amorphous hydrogenated silicon, and a layer of a compound of two substances having different composition ratios.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28590086A JPS62148966A (en) | 1986-12-02 | 1986-12-02 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28590086A JPS62148966A (en) | 1986-12-02 | 1986-12-02 | Electrophotographic sensitive body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62148966A true JPS62148966A (en) | 1987-07-02 |
| JPH0310940B2 JPH0310940B2 (en) | 1991-02-14 |
Family
ID=17697474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28590086A Granted JPS62148966A (en) | 1986-12-02 | 1986-12-02 | Electrophotographic sensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62148966A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6432266A (en) * | 1987-07-29 | 1989-02-02 | Fujitsu Ltd | Electrophotographic sensitive body |
| JPH0215271A (en) * | 1987-12-14 | 1990-01-18 | Zuonguoo Kooshiyueeyuen Shiyanhai Guiisuanien Einjioosuou | Amorphous silicon xerographic photo detector with intermediate inclined layer and manufacture thereof |
| JPH02203350A (en) * | 1989-01-31 | 1990-08-13 | Kyocera Corp | Electrophotographic sensitive body |
| US5262263A (en) * | 1989-01-31 | 1993-11-16 | Kyocera Corporation | Layer electrophotographic sensitive member comprising morphous silicon |
| JP2013539225A (en) * | 2010-09-22 | 2013-10-17 | ダウ コーニング コーポレーション | Electronic article and method of forming the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56146142A (en) * | 1980-04-16 | 1981-11-13 | Hitachi Ltd | Electrophotographic sensitive film |
| JPS6415866A (en) * | 1987-07-09 | 1989-01-19 | Nec Corp | Detecting device for autocorrelation degree |
-
1986
- 1986-12-02 JP JP28590086A patent/JPS62148966A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56146142A (en) * | 1980-04-16 | 1981-11-13 | Hitachi Ltd | Electrophotographic sensitive film |
| JPS6415866A (en) * | 1987-07-09 | 1989-01-19 | Nec Corp | Detecting device for autocorrelation degree |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6432266A (en) * | 1987-07-29 | 1989-02-02 | Fujitsu Ltd | Electrophotographic sensitive body |
| JPH0215271A (en) * | 1987-12-14 | 1990-01-18 | Zuonguoo Kooshiyueeyuen Shiyanhai Guiisuanien Einjioosuou | Amorphous silicon xerographic photo detector with intermediate inclined layer and manufacture thereof |
| JPH02203350A (en) * | 1989-01-31 | 1990-08-13 | Kyocera Corp | Electrophotographic sensitive body |
| US5262263A (en) * | 1989-01-31 | 1993-11-16 | Kyocera Corporation | Layer electrophotographic sensitive member comprising morphous silicon |
| JP2013539225A (en) * | 2010-09-22 | 2013-10-17 | ダウ コーニング コーポレーション | Electronic article and method of forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0310940B2 (en) | 1991-02-14 |
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