JPS5984254A - Photosensitive body - Google Patents

Abstract

PURPOSE:To obtain a photosensitive body wide in sensitive wavelength range, high in sensitivity, and superior in charging characteristics, durability, etc. by laminating on a substrate, a laminated photoconductive layer composed of amorphous silicon layers one of both contg. Ge, and 2 amorphous silicon layers contg. C on both sides of said laminated layer. CONSTITUTION:A photosensitive body is prepared by laminating on a substrate 1 a laminated photoconductive layer 6 composed of at least one layer made of amorphous (hereafter abbreviated to a) Si-Ge hydride or fluoride (hereafter a- SiGe:H or a -SiGe:F) or a-SiGeC:H, or a-SiGeC:F, for example, an a-SiGe:H layer 3 and an a-Si:H or a-Si:F laye 5, and on both sides of the layer 6, a- SiC:H or a-SiC:F layers 4, 2. The obtained photoreceptor is enhanced in photosensitivity to light ranging from the visible to IR region by the lamination of the layers 3, 5, raised in adhesion between the substrate 1 and the layer 6 by the action of the layer 2, and enhanced in surface characteristics, accordingly in durability and all-environmental resistance by the presence of the layer 4.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to photoreceptors, such as electrophotographic photoreceptors.

Conventionally, as an electrophotographic photoreceptor, se or Se has Aa,
Photoreceptors doped with Te, Sb, etc., photoreceptors in which ZnO+CdS is dispersed in a resin binder, and the like are known.

However, these photoreceptors have problems in terms of environmental pollution, thermal stability, and mechanical strength.

On the other hand, electrophotographic photoreceptors using amorphous silicon (a-8t) as a base material have been proposed in recent years.
a-8i has a so-called dangling bond in which the bond of 5i-8i is broken, and many localized levels exist within the energy gap due to this defect. For this reason, hopping conduction of thermally excited carriers occurs, resulting in a small dark resistance, and photoexcited carriers are trapped in localized levels, resulting in poor photoconductivity. Therefore, we replaced the above defects with hydrogen atoms (
The dangling bonds are filled by compensating with H) and bonding H to Si.

Such amorphous hydrogenated silicon (hereinafter referred to as a-8
1: Referred to as H. ) is attracting attention for its good photosensitivity, non-pollution, and good printing durability.

However, it is known that a-8i:H is about one order of magnitude less sensitive to light with a wavelength of 750 to 800 nm (near infrared) than to light in the visible range. Therefore, when using a semiconductor laser as a recording light source in an information terminal processing machine that electrically processes information signals and outputs them as hard copies, practical information recording semiconductor lasers are made of GaAtAs. Since the oscillation wavelength is 760 to 820 nm, a-8i:H has insufficient sensitivity and is inappropriate for this type of information recording. In the case of Se-based photoreceptors, the sensitivity is higher than that of photoreceptors made of organic photoconductive materials, but the sensitivity in the long wavelength region is still sufficient to support higher processing speeds. .

Therefore, amorphous silicon germanium hydride (hereinafter referred to as a
It is conceivable to use 5iGe:l[(referred to as .) in the photoconductive layer. Tsuma F), a-8iGe: H is 60
It has good photosensitivity in the wavelength range of 0 to 8501 m.

However, conversely speaking, a-8IGe:H alone has lower sensitivity in the visible region than a-8i:H. Moreover, with only the a-8iGe:H layer, the dark resistance is 10' to 1
It is only 0@Ω-m and has poor charge retention ability. Moreover, a
-8iGe:H has poor film adhesion or adhesion to the support (substrate), and has poor mechanical and thermal properties compared to a-8i:H, making it difficult to put it to practical use as an electrophotographic photoreceptor. There is.

Recently, multifunctional devices that have a recording function using visible light as a light source (for example, functions as a normal electrophotographic copying machine) in addition to recording functions using semiconductor lasers, etc., have been attracting attention.
Neither a-8t:H nor a-8iGe:H mentioned above can satisfy such requirements.

To solve this problem, we formed a sufficiently thick a-8t:H layer on the support to retain charge, and then
A photoreceptor has been proposed in which an a-8fGe:H layer is formed to form a photoconductive layer (a layer that generates carriers in response to light irradiation) having a two-layer structure.

According to this structure, a-8t:H and a-8iGe:H
Each layer improves sensitivity in both visible light and near-infrared light regions. However, this photoreceptor has several problems (particularly the following three points).

(1) a-8iGe: Since the H layer is present on the surface side, the chemical structure is weaker than that of a-8i, and printing durability is poor.

(2) When the a-8iGe:H layer is thick, the sensitivity in the visible light region becomes insufficient. This is thought to be because the presence of the a-8iGe:H layer inhibits the generation of photocarriers in the a-8i:H layer in the visible light region. From the a-8t:H layer, unnecessary charge injection tends to occur, which makes it impossible to maintain the surface potential well, and the adhesion between the a-8i:H and the support is also insufficient. .

As a result of various studies, the present inventor has developed a photoreceptor that can withstand practical use, has excellent sensitivity in the visible and near-infrared regions, has good charge retention characteristics and printing durability, and exhibits stable charge retention characteristics. Heading, we arrived at the present invention.

That is, photoreceptors according to the present invention contain amorphous hydrogenated and/or fluorinated silicon germanium (e.g. a-8i
Ge:H) and amorphous hydrogenated and/or fluorinated silicon germanium carbide (e.g. a-81Gec:)
amorphous hydrogenated and/or fluorinated silicon (e.g. a-8i:
A photoconductive layer is formed by a stack of layers consisting of H) and on which a first amorphous hydrogenated and/or fluorinated silicon carbide (e.g. a-8iC:H) is applied.
a second amorphous hydrogenated and/or fluorinated silicon carbide (e.g. a-8i) layer is provided below the photoconductive layer.
C:H) layer is provided.

According to the present invention, the photoconductive layer is amorphous hydrogenated and/or
Or, since it consists of a layer consisting of at least one of silicon germanium fluoride and silicon germanium carbide, and an amorphous hydrogenated and/or silicon fluoride layer, the former improves sensitivity in the near-infrared region, and the latter improves sensitivity in the near-infrared region. It is possible to provide a photoreceptor that achieves both of the above-mentioned sensitivity in the visible range. Moreover, the latter can be formed above or below the former, but if it is formed above, the surface side will have a-
The presence of A-8i significantly improves the sensitivity in the visible range, and at the same time, the printing durability is lower than that of the top layer even when formed below.
The presence of iC makes υ better. In addition, high sensitivity can be maintained by reducing the film thickness of a-8iGe itself. For example, a-8i
While taking advantage of the high sensitivity characteristics of Ge:H or a-8iGeC:H in a relatively long wavelength range (for example, 600 to 850 nm for 9IJ), we particularly focused on mechanical strength such as stable charge retention and printing durability. In particular, the second a-8iC:H layer provides high charge retention and film attachment.
It is possible to provide a useful photoreceptor that fully satisfies all the characteristics compared to those known so far.

Hereinafter, the photoreceptor according to the present invention will be explained in detail.

The photoreceptor according to the present invention has the second a-8iC:H
Layer 2, the above a-81:H layer 3 and the above a-8iGe:H
a photoconductive layer 6 having a laminated structure consisting of layers 5, the first a-8;
It consists of iC:H layers 4 laminated in sequence.

The second a-3i C:H layer 2 has the functions of holding potential, transporting charges, preventing charge injection from the substrate 1, and improving adhesion to the substrate 1, and in the example of FIG. ~5000A, and in the example of FIG.
It is preferable that the film be formed to have a thickness of 0 μm).

On the other hand, the a-8iGe:H layer 5 forming the photoconductive layer 6 generates charge carriers in response to light irradiation, and exhibits high sensitivity particularly in the long wavelength range of 600 to 850 nm. The thickness may be 1000 A or more in both FIGS. 1 and 2. The photoconductive layer 6 has a total thickness of 5000X to 80μ in the example of FIG. 1 and 2000X to 5μ in the example of FIG.
μrn (particularly 1 μm to 2 μl11) is desirable.On the other hand, a-8t:I (layer 3 functions as a carrier generation layer that exhibits high sensitivity in the visible light range, and both Figures 1 and 2 are 1o
It is provided with a thickness of ooX or more.

Furthermore, the first a-8iC:H layer 4 improves the surface potential characteristics of this photoreceptor, maintains long-term potential characteristics, and maintains environmental resistance (humidity, atmosphere, and chemical species generated by corona discharge). effect prevention), improved mechanical strength and printing durability due to increased surface hardness due to improved bonding energy due to carbon content, improved heat resistance when using photoreceptors, improved thermal transferability (especially adhesive transferability), etc. It functions as a surface modification layer, so to speak. And this first a-8iC:H
It is very important to choose the thickness t of layer 4 such that 5OA≦t≦500OA.

Next, each layer of the photoreceptor according to the present invention will be explained in more detail.

First a-8iC:H layer This a-8iC:H layer 4 is formed by modifying the surface of the photoreceptor.
This is indispensable for making the 8i photoreceptor practically superior. That is, it enables the basic operations of an electrophotographic photoreceptor, such as charge retention on the surface and attenuation of the surface potential due to light irradiation. Therefore, the repetitive characteristics of charging and optical attenuation are very stable, and good potential characteristics can be reproduced even if left for a long period of time (for example, one month or more).

On the other hand, in the case of a photoreceptor having a-81:H as its surface, it is easily affected by humidity, air, ozone atmosphere, etc., and the potential characteristics change significantly over time. Also, a-8iC:H
Because of its high surface hardness, it has excellent abrasion resistance during processes such as development, transfer, and cleaning, and can withstand hundreds of thousands of printings.It also has good heat resistance, so it can be applied with heat such as in adhesive transfer. process can be applied.

In order to achieve such excellent effects comprehensively, a-
8iC:H layer 4 has a film thickness of soX≦t≦500O as described above.
It is important to select within the range of A.

That is, if the film thickness exceeds so o o
The residual potential becomes too high and the sensitivity decreases, resulting in a-8
The good characteristics as an i-type photoreceptor may be lost.

In addition, if the film thickness is less than 50A, the charge will not be charged on the surface due to the tunnel effect, so a-8
The thickness balance between the iC:H layer 4 and the a-8iGe:H layer 3 causes an increase in dark attenuation and a significant decrease in photosensitivity. Therefore, the thickness of the a-8iC:H layer 4 is 5000
It is very important that the score be A or below and 508 or above.

Furthermore, it has been found that it is also important to select the carbon composition of the first a-8iC:H layer 4 in order to exhibit the above-described effects. The composition ratio is a-8il, -XC
If expressed as X:H, X is 0.4 or more, especially 0.4≦X≦
It is desirable that the carbon atom content be 0.9 (carbon atom content is 4° (11) atomic% to 90 atomic%).

That is, if 0.4≦X, the optical energy gap is approximately 2.3 eV or more, and as shown in FIG. is the resistivity in the dark, ρL is the resistivity at the time of light irradiation, and ρD
/ρL is small (the culm conductivity is low), and most of the irradiated light reaches the charge generation layer 6 due to the so-called optically transparent window effect. Conversely, if x〈0.4,
A portion of the light is absorbed by the surface layer 4, and the photosensitivity of the photoreceptor tends to decrease. Furthermore, if Since the deposition rate decreases, it is preferable to set X≦0.9.

Note that the first a-8iC:H layer is the second a-8iC:
Like the H layer, it is essential to contain hydrogen, and the hydrogen content is usually 1 to 40 atomic units, or even 10 atomic units.
It is preferable to set it to 30 atomic fy.

Second a-8iC:H layer This a-8iC:H layer 2 is (1
2) It has both functions, has a dark resistivity of 10120 or more, has high electric field resistance, has a high potential maintained per unit film thickness, and is injected from the photosensitive layer 6. Since electrons or holes exhibit large mobility and lifetime, charge carriers are efficiently transported to the support 1 side. Further, since the size of the energy gap can be adjusted by changing the composition of carbon, charge carriers generated in the photosensitive layer 6 in response to light irradiation are not created a barrier and can be efficiently injected. Also,
This second a-8iC:H layer 2 is applied to the support 1, e.g.
It also has properties such as good adhesion to electrodes and good film formation. Therefore, this a-8iC:H layer 2 maintains a high surface potential at a practical level, efficiently and quickly transports the charge carriers generated in the photosensitive layer 6, and has the function of making a photoreceptor with high sensitivity and no residual potential. be.

In order to achieve these functions, the film thickness of the a-8iC:H layer 2 in the example of FIG. 2 is 5,000. A to 80μ groove is desirable. If this film thickness is less than 5000X, it is too thin and the surface potential necessary for development cannot be obtained, and if it exceeds 80 μm, the surface potential becomes high and the adhering toner becomes difficult to remove. The carrier will also stick to the surface. However, the film thickness of this a-8iC:H layer is S
Even if it is made thinner (for example, about 10 μrn) compared to the e-photoreceptor, a surface potential at a practical level can be obtained.

The a-8iC:H layer 2 in FIG. 1 is used as a blocking and subbing layer, and its thickness is preferably 50A to 5000X. In other words, if it is less than 5oX, it is a city.

It is preferable to use 50A or higher in order to avoid the blocking effect of the load and to improve adhesion to the film and the substrate. On the other hand, if the film thickness exceeds 50,001 mm, the blocking effect is good, but the photosensitivity of the photoreceptor as a whole deteriorates, and the film forming time of a-8iC:H is not great, which is disadvantageous in terms of cost. It is.

Moreover, this a-8iC:H layer 2 is a-8i I-xCx
: When expressed as FI, 0.1≦X≦0.9 (carbon atom content is 10 atomic % - 90 atomic
%, preferably 30 to 90 atomic %). If 0.1≦X, a-8iC:H
The electrical and optical properties of the layer 2 can be made completely different from those of the a-8iGe:H layer 3. When x) is 0.9, most of the layer becomes carbon and semiconductor properties are lost, and the deposition rate during film formation decreases, so to prevent this, X≦0. This is because it is better to set it to 9.

The a-8iGe:H layer 5 has a fifth layer for near-infrared wavelength light.
As shown in the figure, it has been found that it exhibits high photoconductivity, a-8
Compared to i:H, it has sufficient photosensitivity (half-reduced exposure amount (erg/crA
). On the other hand, the a-8t:H layer 3 exhibits sufficient momme sensitivity to visible light as shown in FIG. Therefore, both these layers (a-8iGe:H, a-8t
:H), as shown in FIG. 5, a photoreceptor that exhibits high sensitivity over a wide range of near-infrared and visible regions can be obtained, and the desired purpose can be achieved. The stacking order of these two layers is, as described above, a-8iGe:H on top, a-8i:I■
may be at the bottom or vice versa. a
Even if -8iGe:H is on top, if the film thickness is reduced, visible light can effectively reach a-8t:H (15).

In particular, the thickness of the photoconductive layer 6 is 500 OA to 500 OA in the example shown in FIG.
It is best to set it to 80μm, and in the example of Fig. 2, it is 2000A~
The thickness is preferably 5 μm. That is, in FIG. 1, when the film thickness is less than 500 OA, it is difficult to obtain the external surface potential and surface charge necessary for development, and the irradiated light is not absorbed at all, and a portion of the underlying a-8iC: Since it reaches II layer 2, photosensitivity decreases, while if it exceeds 80 μm, it takes time to form a film and productivity is poor. In the example shown in Figure 2, if the film thickness is less than 200 OA, the photosensitivity will decrease, and the a-8iGe:H and a-8i:H layers themselves do not need to have potential retention properties. It is not necessary to make the photosensitive layer thicker than necessary, and an upper limit of 5 μm is sufficient. a-8iGe:H5 and a-8i:H3 are each 10
Light cannot be absorbed sufficiently unless the thickness is 0OA or more.

Further, in order to improve the charge retention property of this photoconductive layer (same as the above a-8iC:H layer 2.4), for example, elements of Group 1A of the periodic table (B, At) are added during film formation.

It is best to increase the resistance by doping (Ga11n, etc.).
6) It is valid. The film characteristics of the &-8iGe:H layer 5 vary greatly depending on film forming conditions such as substrate temperature and high frequency discharge power in the manufacturing method described below. In terms of composition, the Ge content is preferably set to 0.1 to 50 atomic%. That is, if it is less than 0.1 atomic %, the long wavelength sensitivity will not improve much, and if it exceeds 50 atomic %, the sensitivity will decrease and the mechanical properties and thermal properties of the film will deteriorate.

Further, it is desirable that the number of bonds between St and H in a-8iGe:H and a-8t:H is greater than that in 8l-)W3Si. Specifically, the wave number is approximately 2090. 'Infrared absorption intensity■ν81)1. And the wave number is about 2ooo, 7'
The infrared absorption intensity Ivstn of 0≦Ivsru, /I
t/81H≦0.3 Te is good. The amount of H bonded to Si is preferably 3.5 to 20 atomic% based on 81. When these conditions are met, ρD/ρ
This is desirable because it results in a photoreceptor with a large L.

In order to improve the film properties of the a-8iGe:H layer, it is possible to incorporate carbon to form an a-8iGeC:H layer, or to improve the film properties of the a-8iGeC:H layer.
It is effective to mix -8iGe:H and a-8iGeC:H. In this case, carbon at 0.001 ppm
~30 atomic % (especially 0.01 ppm ~
It is desirable to contain 1,010,000 pp; if the content is less than this range, the strength will decrease, and if it is more, the photosensitivity will decrease, especially in the long wavelength range. This is because carbon widens the optical energy gap (see example a-8iC:H in Figure 3).

In the above, in order to compensate for dangling bonds, fluorine is introduced into a-8t in place of the above-mentioned I (or in combination with H), and a-8iGe:FX
a-8iGe:H:FSa-8iCGe:F.

a-8iCGe:H:F, a-8iC:FXa-8IC
:H:F etc. can also be used. In this case, the amount of fluorine is preferably 0.01 to 20 atomic%, and 0.5 to 1 atomic%.
0 atomic is even better.

Next, an apparatus, such as a glow discharge decomposition apparatus, which can be used to manufacture a photoreceptor according to the present invention will be described with reference to diagram Kc4.

In the vacuum chamber 12 of this apparatus 11, the above-described substrate 1 is fixed on a substrate holding part 14, and the substrate 1 can be heated to a predetermined temperature with a heater 15.

A high frequency electrode 17 is disposed facing the substrate 1, and a glow discharge is generated between the high frequency electrode 17 and the substrate 1. In addition, 19. in the figure.
20.2 engineering, 22.23.27.28.29.34.3
6.38 each half, 3o is G e H or a source of gaseous germanium compound, 31 is SiH or a source of gaseous silicon compound, 32 is CH or a source of gaseous carbon compound, 33 is a source of gaseous carbon compound A carrier gas source such as Ar or H2. In this glow discharge device, first, the surface of, for example, an At substrate 1 that is covered with a support is cleaned, and then placed in a vacuum chamber 12, and the gas pressure in the vacuum chamber 12 is set to 10 T.
The pulp 36 is adjusted and evacuated so that the temperature is 0.0 or more, and the substrate 1 is heated and maintained at a predetermined temperature, for example, 200°C.

Next, using a high purity inert gas as a carrier gas,
A mixed gas diluted with an appropriate amount of IH4 or a gaseous silicon compound, GeH4 or a gaseous germanium compound, and CH4 or a gaseous carbon compound is introduced into the vacuum chamber 12 as appropriate depending on the respective film composition, and is regulated by the pulp 34. Ta0,0
A high frequency voltage is applied by the high frequency power supply 16 under a reaction pressure of 1 to 10 Torr. As a result, each of the above reaction gases is decomposed by glow discharge, and a-8iC2H containing hydrogen is deposited on the substrate 1 through the above layer 2 (and further 4) (19). At this time, by appropriately adjusting the flow rate ratio of the silicon compound and the carbon compound and the substrate temperature, a-8it-xcx÷H (for example, when ) can be precipitated, and also precipitated a-8
a-8iC:H at a speed of 100OX/min or more without significantly affecting the electrical characteristics of fC:H.
It is possible to deposit

Furthermore, in order to deposit a-8i:H and a-8iGe:H (photosensitive layer 6 above), the silicon compound and then simultaneously the germanium compound may be decomposed by glue discharge, respectively, without supplying the carbon compound. In order to form a-8iCGe:H, a carbon compound may also be supplied at the same time. In particular, if the a-8iGe:H photosensitive layer is decomposed by glow discharge with a gaseous compound of Group IA elements of the periodic table, such as B, H, added to a silicon compound or germanium compound in an appropriate amount, the a-8iGe:H It is possible to improve the photoconductivity and also increase the resistance.

Note that the above manufacturing method is based on the glow discharge decomposition method, but other methods include sputtering (20) method, ion blating method, and a- 8iC or a-8i
A method of vapor depositing Ge (in particular, the method of evaporating Ge
The above-mentioned photoreceptor can also be manufactured by the method disclosed in Japanese Patent Application No. 6-78413 (Japanese Patent Application No. 152455/1982). In addition to SiH4 and GeH4, the reaction gases used include Si,
It is possible to use H, Ge, H6, SiF, 5iHF, or a derivative gas thereof, or a lower hydrocarbon gas other than CH4, such as "t"6, C5Hs, or the like.

Next, an example in which the present invention is applied to an electrophotographic photoreceptor will be specifically described.

Example 1 Trichlorethylene wash, 0.1 fp NaOH
Aqueous solution, 0.1% HNO, At etched with aqueous solution
The substrate was set in the glow discharge device shown in FIG. 4, and a second a-8iC with a thickness of 10 μm was deposited on the At substrate under the following conditions:
An H layer, an a-8IGe:H layer with a thickness of 1 μm, a Si:H layer with a thickness of 1 μs, and a 10a-8iC:H layer with a thickness of xooof were successively formed.

Formation of second a-8iC:H layer: CH4 flow rate: 8cc/m1n SiH, flow rate: 12cc/m1nAr gas flow rate
Vacuum chamber internal pressure during 100cc/min discharge 0.2
Torr substrate temperature 200°C Discharge power 20W Film forming time Approximately 10 hours Formation of a-8iGa:H layer: GeH4 flow rate 4 cc/m1nSiH4 flow rate 16 cc/m1nAr gas flow rate 10
Vacuum chamber internal pressure during discharge at 0 cc/min, discharge nozzle and substrate ff1A degree Same film forming time as above for about 1 hour Formation of a-8i:H layer: 5IH4 flow rate 20 ce/m1nAr gas flow rate 100 ec/min during discharge vacuum chamber internal pressure,
Discharge blower and substrate temperature Same as above Film forming time: Approximately 1 hour Formation of 10th a-8iC:H layer: Film forming time: Approximately 6 minutes Other conditions Same as in the case of forming the second A-810:H layer. When the composition of each layer of the produced photoreceptor was investigated by Auger spectroscopy, it was found that
iC:H layer both 11boa-8i0. C, , :I(
The a-8iGe:H layer is almost a −
81°gGe, , , :H to Ga) and its optical bandgap was 1.5 eV, and the optical bandgap of a-81:H was 1.7eV. Further, the spectral sensitivity as a photoreceptor was as shown in FIG.

Then, this photoreceptor was corona charged at -6 KV for 10 seconds, dark decayed for 51 seconds, and then irradiated with light with a wavelength of 780 nm at an intensity of 1 μW/crl for 20 seconds, and its charge decay characteristics etc. were measured. . The results are shown in Table 1 (a) below.
It is shown as Further, the charge decay (23) characteristic was measured by dark decaying in the same manner and irradiating with a 1 tux halogen lamp, and the results are shown as (b) in Light-1 below.

Comparative Example 1 In the same manner as above, a 10 μm thick a-
8iC:H, 2pm thick a-8iGe:H, thickness 15
A photoreceptor was prepared by sequentially laminating 00A a-8iC:H. This photoreceptor was subjected to the same treatments as in (a) and (b) above.

Comparative Example 2 In the same manner as above, a 10 μm thick a-
8iC: H layer thickness 2μ Tsumugi*-8t: H layer thickness 1500
A-8iC:H of X was sequentially laminated to prepare a photoreceptor.

This photoreceptor was subjected to the same treatments as in (a) and (b) above.

Table 1 (24) Next, the above photoconductor was subjected to 2Lux 5eeO image exposure to form an electrostatic latent image, which was then developed with positive polarity toner, transferred to transfer paper, and fixed. When the photoreceptor according to Example 1 was used, it was possible to obtain a clear image with high image density and no capri. This operation was repeated 100,000 times, but there was no deterioration in image quality. On the other hand, when a comparative number of photoreceptors were used, capri was produced in both cases.

On the other hand, GaA with a light emission output of 3 mW and an oscillation wavelength of 780 nm
A tAa semiconductor laser was used as a recording light source, and an octahedral mirror scanned the beam over the area of an A4 sheet in one second.
The photoreceptor was irradiated. Next, when reverse development was performed using negative polarity toner, and the image was transferred and fixed onto transfer paper, the image density was high.
Four clear images with no fog were obtained. However, comparative example 2
Example 2 Using the same glow discharge method as in Example 1, a 20a-8iC2H layer with a thickness of 1500X was deposited on an At substrate. 5μ
A boron-doped a-8iGe:H layer as described above, a boron-doped a-8t:H layer with a thickness of 5 μm, and a first a-8iC:H layer with a thickness of 1500 A were sequentially laminated.

However, when forming the a-8iGe:H layer, B, H, /5t
1% Ar dilution with a flow rate ratio of H4=o, oi (%) 11. H
, were mixed and glow discharged. a-8i: Boron-1 doping into the H layer is B, H, /5iH4 = 2 (flow rate ratio)
, 0.1-th Ar dilution B, H.

The dark decay characteristics, etc. of the obtained photoreceptor were measured in the same manner as described in Example 1, and the results are shown in Table 2 below.

(27) Table-2 Next, the above photoreceptor was subjected to image exposure of 2tuX-8ec to form an electrostatic m image, which was then developed with positive polarity toner, transferred to transfer paper, and fixed. When the photoreceptor according to Example 2 was used, a clear image with high image density and no fog could be obtained. Still 1oμW/i,
When image exposure was performed at a wavelength of 750 nm and image evaluation was performed in the same manner as above, a clear image with high image density and no fog was obtained.

Example 3 By the same glow discharge method as in Example 1, 10 pm thick a-8iC:H and 1 μm thick Si:
a-8iGeC:H(CO,5at
om%) and a-8iC:H with a thickness of 100 OA were sequentially laminated.

This photoreceptor is 08
) It exhibited a half-reduced exposure amount of 2.5 er g /ctl-, a half-reduced exposure amount of 1.2 Lux·see for visible light, and exhibited good sensitivity characteristics in both wavelength regions.

[Brief explanation of the drawing]

The drawings illustrate the invention and include FIGS. 1 and 2.
The figures are cross-sectional views of a part of the second side of the electrophotographic photoreceptor, Figure 3 is a graph showing the photoconductivity of a-8t:H and a-8iC:H of each composition, and Figure 4 is a graph showing the photoconductivity of a-8iC:H of each composition. FIG. 5 is a schematic cross-sectional view of the manufacturing apparatus, and is a graph showing the photosensitivity of each photoreceptor depending on the wavelength of light. In addition, in the symbols shown in the drawings, 1-------
--One-support special body (substrate) 2---------12nd a-8iC:H layer 3--1-
--1a-8iGe: H layer 4-----1st a
-8iC:I (layer 5-------,, a-8i:H
Layer 6 --- Photoconductive layer (photosensitive layer) 11 --- Glow discharge device 17 --- High frequency electrode 30 --- Gaseous germanium Compound supply source 31 ------- Gaseous silicon compound supply source 32 -
---, gaseous carbon compound supply source 33 --- Carrier gas supply source ρD/ρL --- Dark resistivity/resistivity at the time of light irradiation. Agent: Patent attorney Hiroshi Aisaka (1 person) Japanese Patent Application Publication No. 1983
-84254 (10)

Claims (1)

[Scope of Claims] 1. A layer consisting of at least one of amorphous hydrogenated and/or fluorinated silicon germanium and amorphous hydrogenated and/or fluorinated silicon germanium, and amorphous hydrogenated and/or fluorinated silicon germanium. A photoconductive layer is formed by a laminate with a layer of silicon, and a first amorphous hydrogenated and/or fluorinated silicon carbide layer is provided on the photoconductive layer, and a second layer is provided below the photoconductive layer. A photoreceptor characterized in that it is provided with an amorphous hydrogenated and/or fluorinated silicon carbide layer. 2. The thickness of the photoconductive layer is 5000 A to 80 μm, and the thickness of each layer of the laminate forming this photoconductive layer is 100 μm.
The photoreceptor according to claim 1, wherein the second amorphous hydrogenated/or fluorinated silicon carbide layer has a thickness of 50X to 5000A. That's it, the thickness of the second amorphous hydrogenated and/or fluorinated silicon carbide layer is 500X~80! μ・
The photoreceptor according to claim 1, which is m. 4. The photoreceptor according to any one of claims 1 to 3, wherein the first amorphous hydrogenated and/or fluorinated silicon carbide layer has a thickness of 50x to 5000x. 5. The first amorphous hydrogenation and/or process is performed when the carbon atom content in the fluorinated silicon carbide layer is 40 atomic
Claims 1 to 90 atomic%
The photoreceptor described in any one of item 4. 6. The carbon atom content in the second amorphous hydrogenated and/or fluorinated silicon carbide layer is 10 atomic
Claims 1 to 90 atomic
The photoreceptor described in any one of item 5. 7. The germanium content in one layer of the laminate forming the photoconductive layer is (11 atoms ~ 50 at
Claims 1 to 6, which are omic%.
The photoreceptor described in any one of the following items. 8. According to any one of claims 1 to 7, wherein the carbon atom content in one layer of the laminate forming the photoconductive layer is 0.001 ppm to 30 atomic. photoreceptor. 9. The photoconductive layer, the first and second amorphous hydrogenated and/or fluorinated silicon carbide layers are doped with an element of group rlTA of the periodic table, according to claims 1 to 8. The photoreceptor described in any one of the items above. 10. The photoreceptor according to claim 9, wherein the element of Group ⅠA of the periodic table is B, At, Ga, or In.