JPS58194732A - Forming method of amorphous silicon carbide layer - Google Patents

Abstract

PURPOSE:To form an amorphous silicon carbide layer for electrophotographic photosensitive materials with a high productivity, by decompsing a vapor of a carbon compound and a vapor of a silicon compound by the glow discharge, and depositing the vapor on a substrate kept at a relatively low temperature (100 deg.C or below). CONSTITUTION:A substretrate 1 fixed on a holding part 14 is heated to 100 deg.C or below by a heater 15 and placed in a vacuum tank (a tank for the decomposition by the glow discharge) 12. A valve 36 is then adjusted to evacuate the vacuum tank 12 and adjust the pressure of the tank 12 to about 10<-6>Torr. A gaseous silicon compound, e.g. SiH4, a gaseous hydrocarbon compond, e.g. CH4, and a carrier gas, e.g. Ar, or H2, are introduced respectively from feed sources 31, 32 and 33 into the vacuum tank 12, and a high-frequency voltage is applied across a high-frequency electrode 17 and the holding part 14 under about 0.01- 10Torr pressure to decompose the above-mentioned respective gases by the glow discharge to deposit the aimed amorphous silicon carbide layer containing hydrogen on the substrate 1.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming an amorphous silicon carbide layer used in semiconductor devices such as photoelectric elements and electrophotographic photoreceptors, and in particular to a method for producing an amorphous silicon carbide layer used in electrophotographic photoreceptors and the like. Concerning methods for forming excellent sexual characteristics.

In recent years, amorphous silicon (hereinafter referred to as a-II
) is attracting attention. However, the a-button is amorphous and has an irregular atomic arrangement structure.
There are many defects based on so-called dangling bonds in which the bonds of Ill are broken, and many localized units exist within the energy gap due to these defects. For this reason,
Hopping conduction of thermally excited carriers occurs and the dark resistance is small.
Further, the photoelectric phenomenon is caused by rounding in which the photoexcited carriers are trapped in the localized level.

A so-called goo discharge method is known as a circle production method that improves this drawback and forms a "glue" by decomposing the 11-element compound gas by glue discharge. According to this production method, the accumulation of a-1f is reduced. Hydrogen generated during the process (by decomposition of the iodine compound) is introduced into the oxide and chains the dangling bonds, improving the semiconductor properties.Amorphous silicon (hereinafter referred to as a-al :H) has excellent photoelectric phenomena for visible light and infrared light, but on the other hand, it has an excellent photoelectric phenomenon in the dark.
- and 17. When used as a surface layer for semiconductors, Kti cannot be said to have sufficient moisture resistance, heat resistance, abrasion resistance, etc.

In order to improve these points, amorphous silicon carbide (hereinafter referred to as a-!IICH) in which carbon atoms are introduced in addition to hydrogen atoms is known. This a-ste:H can be produced, for example, by introducing hydrocarbon gas and silicon compound gas into a gray discharge decomposition tank, decomposing them by gray discharge, and depositing a-ste:a on the substrate. can get. The a-glc:H obtained in this way is a
-81: Has properties not found in H ◎ That is, as the amount of carbon atoms introduced increases, the optical energy gap increases, so the photoconductivity to visible light decreases somewhat, but on the other hand, dark resistance, The charge retention capacity is increased, and physical properties such as moisture resistance, heat resistance, and abrasion resistance are improved. Such characteristics are useful for improving the characteristics of photoelectric elements, but are particularly important when improving the characteristics of electrophotographic photoreceptors and the like. In other words, in addition to high photoconductivity, electrophotographic photoreceptors are required to have high dark resistance and charge retention ability, and when used in copying machines that make many copies, moisture resistance and heat resistance are required. This is because printing durability, abrasion resistance, etc. are required.

Conventionally, electrophotographic photoreceptors include photoreceptors in which selenium is doped with arsenic, tellurium, anti-carbon, etc.; photoreceptors using organic photoconductive substances such as bisazo pigments and polycyclic quinone pigments; and photoreceptors using zinc oxide and sulfide. It has not yet been possible to satisfy the resin properties of cadmium, etc. The reason for this is that although all of these photoreceptors are practically satisfactory in terms of photoconductivity, they are insufficient in terms of environmental pollution resistance, moisture resistance, heat resistance, mechanical A degree, etc. This is because printing durability, etc., especially when used repeatedly for image formation, is insufficient.

On the other hand, in the field of electrophotographic photoreceptors, for example, US Pat.
82 Victim Specification, Special #! As described in Japanese Patent No. 51-90827, etc., a composite photoreceptor has been developed which is functionally separated into a carrier generation layer that generates carriers and a carrier transport layer that transports carriers. In this composite photoreceptor, the carrier generation layer has good photoconductivity! ! -, the carrier transport layer is required to have carrier transport ability, high dark resistance, and charge retention ability. By providing this carrier transport layer on the upper layer of the photoconductor, it is possible to improve moisture resistance, printing durability, and abrasion resistance. It is said that improvements will be made. However, even in the case of this composite photoreceptor, conventional ones mainly use organic substances and highly toxic selenium, so they do not fully satisfy the above-mentioned properties of the photoreceptor. .

Under these circumstances, when manufacturing semiconductor devices, a-
The usefulness of using JiG:H is understood, and in particular, it is understood that it is extremely useful as an electrophotographic photoreceptor. However, according to the inventor's study, a
It was found that the deposition rate when -fiic:H is deposited on a substrate to form a layer is slower than that of a-Eil:H, and in particular becomes significantly slower as the carbon content increases. . For this reason, for example, when a thickness of several tens of microns or more is required, such as in the case of a photosensitive layer in an electrophotographic photoreceptor, the production time is extremely long), and there is a fatal problem that practicality is lost.

The present inventors have discovered a method for forming an aJ%C:H layer that has a high deposition rate and particularly high productivity even when the amount of carbon introduced increases, and has completed the present invention.

That is, in the present invention, when depositing a carbon compound gas and siliconized silicon carbide, the temperature of the substrate is set to 100°C.
The present invention relates to a method for forming an amorphous silicon carbide layer that is maintained at a temperature below (particularly 10° C.).

The method according to the present invention will be explained in detail below.

First, an example of an apparatus (glow discharge device Wt) for carrying out the method according to the invention to deposit amorphous silicon carbide (% a-gic:H) will be described with reference to FIG.

This device 1110 vacuum 41! (Glow discharge decomposition layer) 1
2, the substrate l is fixed on the substrate holder 81114,
The heater 15 can heat the substrate 1 to a predetermined temperature (100° C. or lower). This substrate temperature (Ts) is 1
0℃~room temperature 4! ! The heater 15 is not required when the temperature is high. A high-frequency electrode 17 is arranged opposite to the base 4kl, and a glow discharge is generated between the high-frequency electrode 17 and the substrate 1. Oh, 20°21.22.23.27.28.29 in the diagram,
Ah, 36, μs is each valve, 31 is a supply source of 5IH4 or a gaseous silicon compound, 32 is a supply source of CH or a gaseous carbon compound, and 33 is a carrier gas supply source such as Ar or horse. In this glow discharge device, first, the surface of a support, such as an At substrate l, is cleaned, and then placed in a vacuum chamber 12, and the gas pressure in the vacuum chamber 12 is set to 10% at an initial pressure.
Adjust and exhaust the pulp 36 so that Torr,
In addition, the substrate 1 is maintained at a predetermined temperature, for example, (C). Then, using a high purity inert gas as a carrier gas, st
A mixed gas prepared by diluting an appropriate amount of Y or a gaseous silicon compound, and CH or a gaseous carbon compound is introduced into the vacuum chamber 12, and a mixed gas of 0.0l-10Torr (0.1 to ITo in %) is introduced into the vacuum chamber 12.
High-frequency power (for example, frequency 1356 h) is applied by the high-frequency power source 16 under a reaction pressure of
Deposit -8iC:H onto substrate l. At this time, adjust the flow rate ratio of silicon compound and longitudinal compound and the substrate temperature appropriately! 1
111, a-8it-xcx:H(
For example, it is possible to precipitate a-8iC:H (up to about 0.9), and it is possible to deposit a-8iC:H at high speed without affecting the electrical properties of the precipitated a-8IC:H.
It is possible to deposit Furthermore, in order to deposit a-81:H as a photoconductive layer to be described later, a gaseous compound such as a carbon compound, such as BtL, added to a silicon compound in an appropriate amount is decomposed by glow discharge to form a-8l:
In addition to improving the photoconductivity of H, it is also possible to increase its resistance. An example of a photoreceptor that can be produced using this glow discharge device is shown in the second example.
As shown in the figure. This photoreceptor has a first a-8iC:H layer 2, an a-8i:H (photoconductive) layer 3, and a second a-8IC:H layer 4 laminated in sequence on a conductive support substrate l. It consists of things. The first a-8iC:H layer 2 mainly has the functions of potential retention, charge transport, and adhesion E to the substrate 1, and is formed to a thickness of 5000A-80IIH1 (more preferably 20 μm for each layer). Good. The photoconductive layer 3 generates charge carriers in response to light irradiation, and has a thickness of 5000X to 5 μm (4
It is desirable that I be 1 μm to 2 βm). Furthermore, the second
The a-8iC:H layer 4 improves the surface potential characteristics of this photoreceptor, maintains long-term potential characteristics, and maintains environmental resistance (prevents the effects of humidity, wood grain, and chemical species generated by corona discharge).
It has functions such as improving printing durability due to its high surface hardness, improving heat resistance when using a photoreceptor, and improving thermal transferability (especially adhesive transferability), and acts as a surface modification layer. . Then, the thickness of this second a-8 IC:H layer 4 is t≦2000K <preferably 400X≦t≦1
600A) is important.

By configuring the photoreceptor in this way, the conventional S.
Compared to photoreceptors, it maintains a high potential with a thin film thickness, exhibits excellent photosensitivity to light in the visible and infrared regions, has good heat resistance and printing durability, and is stable and environmentally friendly. have a-8
It depends on the provision of i-type photoreceptors (for example, for electrophotography).

This will be explained in detail below, with particular reference to each layer of the photoreceptor.

This a-8iC:H layer 4 is formed by modifying the surface of the photoreceptor.
8i photoreceptors are indispensable in order to make them practically superior. In other words, the basic characteristics of electrophotographic photoreceptors are charge retention on the surface and attenuation of surface potential by light irradiation. It enables operation.Therefore, charging,
The repetition characteristics of light extinction are very stable9, and even if left for a long period of time (for example, more than 1 month), good potential characteristics can be reproduced.@On the other hand, when a-81:H is In the case of a photoreceptor that has a
1C:H has a high surface hardness, so it is difficult to develop, transfer, and
It has excellent abrasion resistance in processes such as printing, can withstand hundreds of thousands of printings, and has good heat resistance, so it can be applied to processes that apply heat, such as adhesive transfer.

In order to achieve such excellent effects comprehensively, *-
810:H) 50A≦t≦20 with the above 1140 thickness
It is important to choose within the range of 00 A, i.e.
If the film thickness exceeds 200 OA, the residual potential becomes high and the sensitivity decreases, resulting in a-
The 8i type photoreceptor loses its excellent 4I characteristics.

9. If the film thickness is less than 5 OA, the charge will not be charged on the surface due to the tunnel effect. 9. a-8
The thickness difference between the iC:H layer 4 and the a-81:H layer 3 causes an increase in dark attenuation and a drastic decrease in photosensitivity. Therefore, the thickness of the a-8iC:H layer 4 is! 0OOA
Hereinafter, it is important to set the current to 50A or more. In addition, regarding this a-8IC:H layer 4, it is understood that it is also important to select the #L element composition in order to exhibit the above-mentioned effects.

If the composition ratio is expressed as a Si*-ICx:H, then X is 0.
4 or more, particularly 0.4≦X≦0.9 (the carbon atom content is preferably 40ato+n1c- to 90atamic). That is, if 0.4≦X, the optical energy gap will be approximately 2.3.7 or more,
As shown in Figure 3, 1 is substantially photoconductive to visible and infrared light (however, f'nu is the resistivity in the dark, PL is the resistivity when irradiated with light, and ""/PL However, most of the irradiated light reaches the a-8l:H layer (charge generation layer) 3 due to the so-called optically transparent window effect. On the other hand, if x (0, 4), part of the light will be absorbed by the surface layer 4, and the photosensitivity of the photoreceptor will tend to decrease. Because it becomes carbon and loses its semiconductor properties, the deposition rate when forming Makua-8IC:H1K with glow discharge current decreases.
It is preferable to set X≦0.9.O first IL-8iC:H layer This a-8iC:8 layer 2 has both functions of potential retention and charge transport, and has a dark resistivity of 10''. Q-1 or higher, has high electric field resistance, holds a large potential per unit film thickness, and exhibits large mobility and lifetime of electrons or holes injected from the photosensitive layer 3. To efficiently transport charge carriers to the support 1 side. In addition, since the size of the energy gap can be adjusted depending on the carbon composition, the photosensitive wI3
It is possible to efficiently inject the nine charge carriers generated in response to light irradiation without creating a barrier to them. In addition, the O@1 Oa-81C:8 layer 2 also has the property of good adhesion and film attachment to the support 11, for example, an A4 electrode. Therefore, this a-8iC:8 layer 2 maintains a high surface potential at a practical level, efficiently and quickly transports the charge carriers generated in the %1-81:H layer 3, and reduces the residual potential with sensitivity. It serves as a photoreceptor without any blemishes.

For rounding that performs such a function, it is desirable that the rounding strength is 5000 A to 80 m for rounding to which a dry development method based on the Carlson system is applied, for example, by Meikushasha of the a-8iC2H layer 2.

If the film thickness is less than 5000 μm, the surface potential necessary for development will not be obtained due to the thin rounding, and if the film thickness exceeds 980 μm, the surface potential will become too high, making it difficult to remove the adhered toner. The components of the component type developer also adhere to it. However, even if the film thickness of this a-810:H layer is made thinner (for example, 10-odd μm) compared to the 8. photoreceptor, a surface potential at a practical level can be obtained.

Moreover, this a-8iC:H layer 2 is a-811-xcx:
When expressed as H, 0.1≦X≦0.9 (carbon atom content is 10% to 90%)
, preferably 30 to 90 atomic 1G). If 0.1≦X, a-8i C:H
layer! The electrical and optical properties of the a-8i:H layer 3 can be made to be completely different from those of the a-8i:H layer 3. or! When >0.9, most of the layer becomes carbon, the semiconductor properties are lost, and the deposition rate during film formation decreases, so to prevent these, Ktix≦
This is because it is better to set it to 0.9.

a-8i: H layer (photoconductive layer or photosensitive layer) a-81:
The H layer 3 has high photoconductivity with respect to visible light and infrared light, and as shown in Figure tIIE3, the H layer 3 has high photoconductivity with respect to visible light and infrared light.
Pys/PL is highest for red light near 50 am~
It becomes 10'. By using this a-8i:H as a photosensitive layer, it is possible to create a photoreceptor that is highly sensitive to light in the entire ailI region and in the infrared region.

In this way, the thickness of the a-8i:H layer 3 is 1.
It is desirable to set it as 000A - 5 micrometers. Film thickness is soooo.

If the irradiation is less than 100 μm, all of the irradiated parts will not be absorbed, and some of them will reach the underlying layer (Da-8IC:H layer 2), resulting in a significant decrease in photosensitivity. Also, the a-81:H layer 3 Although it has a large charge-transfer area, its resistivity is ~10", Q-3, and the layer itself does not have potential retention properties, so it is necessary to use a layer with a thickness greater than that required for light absorption as a photosensitive layer. There is no need to increase the thickness, and a maximum thickness of 5 μm is sufficient.

In the production of photoreceptors such as those exemplified above, the substrate temperature (Ts) is reduced to 10% during a-81C:HO deposition.
Below 0 degrees Celsius, which is the general temperature condition in trenches (200,:
.

As is clear from the results below, which applied a unique method of maintaining the temperature at a much lower temperature (~3GG℃), if Tm is 100℃ or less, 41 K JIII 1 Oa
-8IC:HO is relatively thick like a-8IC:HO
The film forming speed is greatly improved, and the overall working time can be significantly shortened by K (compared to, for example, the noise required when depositing at conventional temperatures).

Moreover, since the second a-81C:H layer reduces light absorption in the visible and infrared regions, the optical energy gap can be made sufficiently large, making it suitable for use as a photoreceptor. It also has no negative effect on the photosensitivity of the film.

Next, the method according to the present invention will be specifically explained based on the experimental results shown in Figures 1114 to #I7.

Figure 4 shows that when depositing the above a-8IC:H by four-discharge decomposition, the substrate temperature (Ts) was kept at 20°C as in the conventional case.
The optical energy gap of a-8iC:H obtained in nine cases by maintaining the temperature at 0° C. and changing the flow rate ratio of each reaction gas under good conditions is shown. According to this, for example, when the flow rate ratio ((CH,)/(SiH,)) between CH4 and 191H is I2, K
a-81C:HO optical energy gap is approximately 125
・It becomes V.

Next, when we varied the substrate temperature (Ts), we obtained the results shown in Figure 5.90 Based on these results, the optotactic energy df - obtained when % Ts - 200tl: 10 4'r y f(approximately 125 @V) K vs. Ts t%K io,.

If the temperature is below .degree. C., the optical energy gap will not be significantly large, and the above-mentioned value (2, 3.7 or more) required for the 9th 20m-81C:H layer 4 will be fully satisfied.

That is, by setting T<=IOG℃, a-81C:
By increasing the amount of carbon atoms introduced into H, an energy gap of 2.31'V or more can be obtained, and a photoreceptor with extremely low light absorption in the visible and infrared regions (excellent photosensitivity) can be provided. , the superiority of the method according to the invention has been demonstrated. 2 above. ．． 3.■ corresponds to the flow rate ratio (CH4)/(81H*)-do when Ts = 200°C, and the flow rate ratio ((CL)/(sit
,)= &-/a) Even if the CH4 flow rate is reduced, more CH is supplied and an energy gap equivalent to that of the round case is obtained. 09ma〉% By setting T1≦100℃, more carbon atoms are introduced. It is possible to increase the amount. As before
In the case of Ts - 200 DEG C., the amount of carbon atoms introduced is so small that m-81C2ML with a low energy gap cannot be obtained, resulting in a decrease in sensitivity due to light absorption.

FIG. 6 shows the film forming rate of a-8iC:H according to the above flow rate ratio when Ts+=200°C. for example,
When (CH4)/(8tl='-42), the film forming rate is about 80 A/min.

However, when the %Tg was varied, the film forming rate increased as INK lowered the T, as shown in Figure 7, and the slope of the film forming rate change curve increased, especially at temperatures below 100°C, as shown by the tangent line a. It turns out that 100℃ or more (tangent line b) becomes significantly larger than K. For example, when Ts = 100°C, a rolling speed of about 16 OA/ml was obtained, which is twice that when Ts = 200°C.
According to the method of the present invention, the film forming speed of a-8IC:H can be doubled or more, or in other words, the film forming time can be reduced to less than a minute. In the production of the above-mentioned photoreceptor, the film forming time required, for example, 45 hours in the case of the conventional method, but with the method according to the present invention, it can be completed within 22 to 23 hours, and the film forming time is It will take about 13 hours. In other words, the film forming process, which used to take nearly two days using conventional methods, can now be completed in less than one day (less than half a day), significantly reducing work time. It is extremely useful in mass production. Such an improvement in film forming speed is very effective when forming a relatively thick layer, such as the first a-81C:H scrap 2, among the above-mentioned photoreceptors. Of course, in forming No. 20a-810:H/14 mentioned above, 4
, by setting Tg≦lOO°C, in addition to setting the energy gap to the desired value as described above, it is possible to shorten the film forming time. :H
The reaction gas used for rounding to obtain is the above-mentioned CH4
In addition to (methane), carbonized metal gases such as hydrocarbons such as ethane, ethylene, propane, globylene, and butane can be used. However, if the number of carbon atoms in this reaction gas increases more than necessary, it will itself undergo oligomerization during gray discharge decomposition, producing unnecessary by-products that degrade optical properties, so the gas used must be selected appropriately. It is better to do so. In addition, as the other reaction gas 11, the above-mentioned 081H
A silicon compound gas such as 4 (silane) Oflh K % 8 bHs (disilane) can be used.

Both the first and second Oa-8IC:H layers described above need to contain hydrogen, but if they do not contain hydrogen, the charge retention characteristics of the photoreceptor will not be practical. Therefore, the hydrogen content is 1 to 40 atoms.
c% (tf in history 10~30 atamie'Ik
) is preferable. The hydrogen content of the photoconductive layer 3 is essential to compensate for dangling pounds and improve photoconductivity and charge retention, and is usually 1 to 40%.
atomislG F) 13.5-205-20at
It is preferable that the a-8iζH layer 3 has a conductivity type of 6a-8iζH layer 3, which can be controlled to have a conductivity type by doping with impurities during manufacturing. 8i: B for making the H layer 3 intrinsic or P type
, AA%Ga%In.

Although it is possible to dope elements of group Ⅰ of the periodic table, such as Tt, the doping amount is 10 to 5 atomtc fk (furthermore a
to ~1 atomic 5G) is desirable, 19, a-
81: N1P, As, Sb, Bi for H layer 3ON type
They can be doped with Group V elements of the periodic table, but for the same reason as above, the doping amount is 10~1 stom.
It is desirable that i@- (furthermore, 10 to 10 at@mie%).

Further, in order to increase the resistance of a-8i:HO, sensitize it, and adjust its conductivity, oxygen, nitrogen, etc., and transition metals such as chromium and π-ganese may be introduced as necessary.

tksI-, the ninth to compensate for dangling Indo,
For a-81, 7ylA was introduced in place of H or in combination with H, resulting in a-8i:F, a-81:
H:F.

a SiC:F%m-81C:H:F. In this case, the amount of fluorine is o, o atomic%.
Gayo<, o, s ~i.

Desirable.

In addition, in the above manufacturing method, the reaction gas company used, 8
iH, other than K 4 st, us, 81F4.5iHF
, or its derivative gas, Cs other than CH, Ha, C
Lower hydrocarbon gases such as s H, etc. can be used.

Note that it is difficult to create a photoreceptor with a structure different from that shown in FIG.

For example, as shown in FIG. 8, the above-mentioned amorphous silicon carbide 3 can be deposited on the substrate 1 to form a photoconductive layer by itself. That is, in this way, an a-8iC:H (amorphous silicon carbide) layer 2 constituting the photoreceptor is formed. 9. As shown in FIG. 9, amorphous silicon 3 is deposited on a substrate 1 to form a photoconductor for charge generation, and amorphous silicon carbide 2 is further deposited on top of this by the method described above for charge retention and photoconductivity. A deposited layer for charge transport may also be formed. As a result, amorphous silicon carbide layer 2 constituting the photoreceptor is formed.

[Brief explanation of the drawing]

The drawings illustrate the present invention; FIG. 1 is a schematic cross-sectional view of a sweetfish photoreceptor manufacturing apparatus; FIG. 2 is a cross-sectional view of a portion of an electrophotographic photoreceptor; FIG. 3 is a-8i: A graph showing the photoconductivity of H and a-8iC:H of each composition. Figure 4 is a graph showing changes in the optical energy gap obtained depending on the flow rate ratio of each reaction gas during a-8iC:H deposition. (However, substrate temperature Ts = 200℃), Figure 5 shows a-8I C:H for nine cases with various substrate temperatures.
Figure 6 is a graph showing changes in the optical energy gap of each reaction gas during a-81C:H deposition.
A graph showing changes in I11 film speed depending on LiIl ratio, Figure 71 shows a-8IC:HO when varying the substrate temperature.
Figures 27, @8aiI, and @9 showing changes in linear film speed are partial views of the other two corners of the electrophotographic photoreceptor. In addition, in the codes shown in the drawings, 1-------1 support (substrate) 2-------1 first a-8iC:H/111----
--- a-8i: H photosensitive layer (photoconductive layer) 4 ---
1. No. 20a-8iC: H7-11 ------- Goo discharge device 17 -------^ Frequency electrode 31, ----- Gaseous silicon compound supply source 32 --
---1 Structural carbon compound supply source ---11-Carrier gas supply source Ts--m-1 Substrate temperature. Agent: Hiroshi Aisaka, Patent Attorney Figure 8: Written amendment to the cap-off procedure 1, Indication of the case 1982 Patent Order No. 75657 2, Name of the invention Method for forming an amorphous silicon carbide layer 3, Person making the amendment Relationship with the case Patent applicant address: 1-26-2 Nishi-Shinjuku, Shinjuku-ku, Tokyo Name:
(127) Roku Konishi Photo Industry Co., Ltd. 4, Agent 6, Number of inventions increased by amendment 7, Subject of amendment (1), Page 10 of the specification, lines 6 to 10, “In particular...
...I can figure it out. ”. (2), page 10, 4th line from the bottom, "5μ-~20μ-
" is corrected to "rloμ-~30μm". (3), r 5000 J on the second line from the bottom of page 10 is corrected to r 2500 J. (4), page 11, line 9, r1600 people” is r20
00 people,” I corrected. (5), "r 2000 people" in the 6th line from the bottom of page 12 is corrected to "r 2000 people, especially 400 people ≦ t ≦ 2000 people." (6), page 13, lines 1 and 2 of the ra-3 ICsH layer.
・・・・・・Delete ``Depends on the balance.'' (7), “50 Å or more” on page 13, line 4 of the same page is changed to “50 Å or more”.
or more, especially 400λ or more,” I am corrected. (8), page 15, line 11 [, preferably 30 to 9
0atosic9vt-Delete. (9), page 16, line 7 (2 places) r 5000
Correct J to r 2500 J. (10), “3.5-20” on page 21, line 9
I corrected it to ``lo~30''. (11), page 21, line 11 to page 22, line 1, “
Correct "possible and desirable." to "possible." (12), rslHF3J on page 22, line 12 is “
SI HFs, SIF hands” is corrected. (13) ``Gas'' on page 22, line 14 is corrected to ``gas, CF now J. 1 or more -

Claims (1)

[Claims] 1. Amorphous silicon carbide, characterized in that when a carbon compound gas and a silicone compound gas are decomposed by glow discharge and amorphous silicon carbide is deposited on the substrate, the temperature of the substrate is kept below too'c. Method of forming silicon carbide layer. 1 Special # that maintains the temperature of the substrate from 10 to 50CK! f Rust search range O The method described in item 1. 3. The method described in claim 1 or 2, characterized in that methane gas is used as the carbon compound gas and silane gas is used as the silicon compound gas. 4. The thickness of the deposited layer of amorphous silicon carbide is 50
00A to 80m, 1ll11 of the claims
The carbon content in the amorphous silicon carbide layer is 10 atml according to the method described in any one of Items 1 to 3.
e-9・atmi・-, the first claim of claim 1
The method described in any one of items 1 to 94 above, wherein a photoconductive layer is formed by depositing an amorphous carbide silicon Ij':1 on a substrate, thereby forming a photoreceptor.
4. Claims rs characterized by a fuss silicon carbide layer
oth! The method described in any one of Items 1 to 5. 7. Deposit amorphous silicon on the substrate to form a photoconductive layer for charge generation, and further deposit amorphous silicon carbide on this to form a deposited layer for charge retention and charge transport, thereby forming a photoreceptor. The first aspect of claim 1, characterized in that the amorphous silicon carbide layer constitutes
The method described in any one of Items 1 to 5. Amorphous silicon carbide is deposited on a substrate to form a deposited layer for charge retention and charge transport, and amorphous silicon is deposited on this to form a photoconductive layer for charge generation, thereby forming a photoreceptor. A method according to any one of claims 1 to 94, characterized in that the amorphous silicon carbide layer comprises an amorphous silicon carbide layer. 9. Depositing another amorphous silicon carbide layer for surface modification on the photoconductive layer made of amorphous silicon;
A round method according to claim 8. 10. The method described in item 9 of claim 41111F, wherein the thickness of the amorphous silicon carbide layer for surface modification is 50X to 2000K. 11. Nine methods described in claim 9 or 10, in which the carbon content in the amorphous silicon carbide layer for surface modification is 4% to 90%.