JPS62143486A - Surface light emitting type luminous element - Google Patents
Surface light emitting type luminous elementInfo
- Publication number
- JPS62143486A JPS62143486A JP60282762A JP28276285A JPS62143486A JP S62143486 A JPS62143486 A JP S62143486A JP 60282762 A JP60282762 A JP 60282762A JP 28276285 A JP28276285 A JP 28276285A JP S62143486 A JPS62143486 A JP S62143486A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- active layer
- emitting
- luminous element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000605 extraction Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010581 sealed tube method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、モニター用受光素子付きの面発光型発光素
子に関する＠
〔背景技術とその問題点〕
一般に、Ａ ｌＧａＡｓ−ＧａＡｓやＩｎＧａＡｓＰ−
ＩｎＰ系からなる面発光型発光素子は、発光波長が夫々
０．８μｍ帯及び１μｍ帯でるり１石英ガラス製光ファ
イバーの低伝搬損失領域に一致している乏め５中短距離
の各種光通信用及び光情報処理用光源として実用化が進
められている。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a surface-emitting light emitting device with a light receiving element for monitoring.
InP-based surface-emitting light-emitting elements have emission wavelengths in the 0.8 μm band and 1 μm band, respectively, which match the low propagation loss region of silica glass optical fibers. It is also being put into practical use as a light source for optical information processing.
このような面発光型発光素子を光通信用光源に用いると
き、信号光の・ぐワーを一定に制御するため、信号光の
監視を必要とする場合がらる。When such a surface emitting type light emitting element is used as a light source for optical communication, it may be necessary to monitor the signal light in order to control the power of the signal light to a constant level.
その几め従来、信号光の一部をビームスプリッタ−等で
分割し、光検出器に導く方法、発光素子ヲマウントして
いるステム内の反射光をステム内に設置し念光検出器に
より検出する等の方法が提案されている。Conventionally, a part of the signal light is split using a beam splitter and guided to a photodetector, and the reflected light from a stem mounting a light emitting element is detected by a photodetector installed inside the stem. Other methods have been proposed.
しかし、このような従来例では、マウント作業に手数が
かかる、信号光の光量が減少する、検出できる光量が少
ない等の欠点があっ几。However, such conventional examples have many drawbacks, such as the mounting work being labor-intensive, the amount of signal light decreasing, and the amount of light that can be detected being small.
この発明の目的は、上記問題点を解消し５発光中心波長
付近における信号光の光量を減衰させることなく、信号
光の監視が可能にして、光ファイバーとの結合効率を向
上することが出来る面発光型発光素子を提供することで
ある。It is an object of the present invention to provide a surface emitting device which solves the above problems, makes it possible to monitor signal light without attenuating the amount of signal light in the vicinity of the five emission center wavelengths, and improves coupling efficiency with optical fibers. An object of the present invention is to provide a type light emitting device.
この発明は、面発光型発光ダイオード、面発光型レーザ
等の面発光型発光素子の光取出し面の全面あるいは一部
分に、この発光素子の活性層より大きいエネルギーギャ
ップをもち、発光中心波長ではほぼ透明である半導体層
をエピタキシャル成長し、この半導体層内にｐｎ接合を
設けることにより、モニター用受光素子を形成し、更に
上記半導体層にレンズとしての機能を持たせた面発光型
発光素子である。This invention provides a surface-emitting light-emitting element such as a surface-emitting light-emitting diode or a surface-emitting laser, which has an energy gap larger than the active layer of the light-emitting element on the entire surface or a part of the light extraction surface thereof, and is almost transparent at the emission center wavelength. This is a surface-emitting type light-emitting device in which a monitoring light-receiving element is formed by epitaxially growing a semiconductor layer, and a pn junction is provided in this semiconductor layer, and furthermore, the semiconductor layer has a function as a lens.
この発明の一実施例として面発光型発光ダイオードの場
合について説明する。本実施例の面発光型発光ダイオー
ドは、第１図に示すように構成される。As an example of the present invention, a case of a surface-emitting type light emitting diode will be described. The surface-emitting type light emitting diode of this example is constructed as shown in FIG.
即ち、 ｎ −ＩｎＰ基板１の一面には％ｎ−ＩｎＰク
ラ、ド層２ 、 Ｐ−ＩｎＧａＡｓＰ活性層３、Ｐ−１
ｎＰクラッド層４、Ｐ−ＩｎＧａＡｓＰオーミックコン
タクト層５が順次、液相成長法等でエピタキシャル成長
によシ形成されている。更に、上記Ｐ−ＩｎＧａＡｓＰ
オーミックコンタクト層５上には、８４０２膜がｃ！Ｖ
Ｄ等により堆積され、電極部分の５ｉ０２膜６をエツチ
ング除去の後、ｐ側電極７が蒸着及びシンターにより形
成されている。That is, on one surface of the n-InP substrate 1, there are %n-InP layer 2, P-InGaAsP active layer 3, and P-1 layer.
An nP cladding layer 4 and a P-InGaAsP ohmic contact layer 5 are successively formed by epitaxial growth using a liquid phase growth method or the like. Furthermore, the above P-InGaAsP
On the ohmic contact layer 5, the 8402 film is c! V
After removing the 5i02 film 6 at the electrode portion by etching, the p-side electrode 7 is formed by vapor deposition and sintering.
又、上記ｎ−ＩｎＰ基板ノの他面、即ち、光取出し面の
全面めるいは一部分には、ｎ１！ｊｌ這極８が蒸着及び
シンターにより形成されると共に、上記Ｐ−ＩｎＧａＡ
ｓＰ活性層３よりバンドギャップの広いｎ−ＩｎＧａＡ
ｓＰ層９が、結晶成長（エピタキシャル成長）により形
成されている。この場合、ｎ″″−ＩｎＧａＡｓＰ層９
は、上記Ｐ−ＩｎＧａＡｓＰ活性ノー３（例えば発信中
心波長１．３μｍとすると、”０．７”０．５ ”０．
６４ Ｐｏ、５６ ）のバンドギー？ッグより広いバン
ドギヤ、ｆの組成の低キヤリア濃度のｎ−ＩｎＧａ人ｓ
Ｐ層（例えば”０．７８ ”０．２２ ＡＳＯ，４７Ｐ
Ｏ，５５）である。Further, on the other surface of the n-InP substrate, that is, on the entire surface or a part of the light extraction surface, n1! jl layer 8 is formed by vapor deposition and sintering, and the P-InGaA
n-InGaA with a wider bandgap than the sP active layer 3
The sP layer 9 is formed by crystal growth (epitaxial growth). In this case, the n″″-InGaAsP layer 9
is the above P-InGaAsP activity No. 3 (for example, assuming the transmission center wavelength is 1.3 μm, “0.7”0.5”0.
64 Po, 56) Bandgi? The band gear is wider than the band gear, and the n-InGa material with a low carrier concentration of the composition f is used.
P layer (e.g. “0.78” 0.22 ASO, 47P
O, 55).
このｌｔ−ＩｎＧａＡｓＰ層９に対して、エツチング等
の方法により、レンズを形成後Ｚｎなどのｐ型不純物を
封管法により拡散し、Ｚｎ拡散層１０が形成されている
。このＺｎ拡散層１０上には、受光素子のｐ側′ｄ１極
１１が、蒸着及びシンターにより形成されている。After forming a lens on this lt-InGaAsP layer 9 by a method such as etching, a p-type impurity such as Zn is diffused by a sealed tube method to form a Zn diffusion layer 10. On this Zn diffusion layer 10, the p-side 'd1 pole 11 of the light receiving element is formed by vapor deposition and sintering.
尚、動作時における素子への電圧は、ｎ側′成隠Ａｕワ
イア１２を基準電圧（ＯＶ）とすると。The voltage applied to the element during operation is assumed to be the reference voltage (OV) of the n-side Au wire 12.
ｐ側電極７１Ｃは正電圧、ｐ側電極Ａｕワイア１３には
負電圧を印加、即ち、表面発光型ダイオードに正方向電
圧、受光素子に逆方向電圧とする。A positive voltage is applied to the p-side electrode 71C, and a negative voltage is applied to the p-side electrode Au wire 13, that is, a positive voltage is applied to the surface emitting diode and a reverse voltage is applied to the light receiving element.
この発明によれば、活性層３より大きいエネルギーギャ
ップを持つ半導体エピタキシャル層即ちｎ−ＩｎＧａＡ
ｓＰ７ｍ ９からなる受光素子を形成しているので、発
光中心波長付近における信号光の光量を減衰させること
なく、信号光のモニターが可能である。According to this invention, a semiconductor epitaxial layer having a larger energy gap than the active layer 3, namely n-InGaA
Since the light receiving element is formed of sP7m9, it is possible to monitor the signal light without attenuating the amount of signal light near the emission center wavelength.
又、この発明によれば、ｎ７−ＩｎＧａＡｓＰノ’ｄ
９即ち光検出層部分をレンズ形状にするなどして、この
層にレンズ機能を持几せているので、光ファイバーとの
結合効率が向上し、又、面発光型発光素子と受光素子の
一体化により、マウント作業の簡略化が図られるなどの
優れた利点を有している。Further, according to this invention, n7-InGaAsP'd
9. In other words, by making the photodetection layer part into a lens shape, this layer has a lens function, which improves the coupling efficiency with the optical fiber, and also allows the surface-emitting type light emitting element and the light receiving element to be integrated. This has excellent advantages such as simplifying the mounting work.
第２図及び第３図はこの発明の変形例を示したもので、
上記実施例と同様効果が得られる。FIGS. 2 and 3 show a modification of this invention,
The same effects as in the above embodiment can be obtained.
即ち、ｗｃｚ図は、ｎ＋−ＩｎＰ基板基板凸レンズ状に
工、チング後、ｎ−ＩｎＧａＡｓＰ層９を結晶成長した
例である。That is, the wcz diagram is an example in which an n+-InP substrate is etched and etched into a convex lens shape, and then an n-InGaAsP layer 9 is crystal-grown.
又、第３図は、ｎ側成極８部分のｎ″″−ＩｎＧａＡａ
Ｐ層９を完全にエツチング除去せず、ｎ側成極８を蒸着
し、シンターするもので、ｎ側の接触比抵抗値を改善し
九例である。In addition, FIG. 3 shows the n″″-InGaAa portion of the n-side polarization
This is the ninth example in which the P layer 9 is not completely removed by etching, and the n-side polarization 8 is deposited and sintered to improve the contact resistivity value on the n-side.
尚、上記実施例及び変形例では、 ＩｎＧａＡｓＰ−Ｉ
ｎＰ系を一例として説明し比が、その他の材料において
も、この発明が実施例出来ることは勿論である。In the above embodiments and modifications, InGaAsP-I
Although the nP-based material is explained as an example, it goes without saying that the present invention can be applied to other materials as well.
その他、この発明の要旨を逸脱しない範囲で、種々変形
して実施例することが出来るのは、言うまでもない。It goes without saying that various other modifications can be made without departing from the spirit of the invention.
第１図はこの発明の一実施例に係る表面発光型発光ダイ
オードを示す断面図、第２図及び第３図はこの発明の変
形例を示す断面図である。
１−ｎ＋−ＩｎＰ基板、２− ｎ−ＩｎＰクラ、ド層、
３・＝ Ｐ−ＩｎＧａＡｓＰ活性層、４ ＝・Ｐ−Ｉｎ
Ｐクラッド４．５・・・Ｐ−ＩｎＧａＡｓＰオーミ、ク
コンタクト層％ ６・・・５ｉＯ２１１１！、 ７・・
・ｐ側′電極、８・・・口側′晟極、９・・・ｎ−−Ｉ
ｎＧａＡｓＰ層（光検出層）、１０− Ｚｎ拡散層。
出願人代理人 弁理士 鈴 江 武 彦第２図
第 ３ 因FIG. 1 is a sectional view showing a surface emitting type light emitting diode according to an embodiment of the present invention, and FIGS. 2 and 3 are sectional views showing modified examples of the invention. 1-n+-InP substrate, 2-n-InP layer, do layer,
3.=P-InGaAsP active layer, 4=.P-In
P cladding 4.5...P-InGaAsP ohmic, contact layer% 6...5iO2111! , 7...
・P side' electrode, 8... Mouth side' electrode, 9...n--I
nGaAsP layer (photodetection layer), 10-Zn diffusion layer. Applicant's agent Patent attorney Takehiko Suzue Figure 2 Cause 3
Claims (2)
くとも活性層を設けた面発光型発光素子において、 上記光取出し面の全面あるいは一部分に、上記活性層よ
り大きいエネルギーギャップをもつ半導体エピタキシャ
ル層を設け、上記半導体エピタキシャル層内にｐｎ接合
を設けることにより、モニター用受光素子を形成したこ
とを特徴とする面発光型発光素子。(1) In a surface-emitting light emitting element in which one side of a semiconductor substrate is a light extraction surface and at least an active layer is provided on the other side, a semiconductor epitaxial layer having an energy gap larger than that of the active layer is formed on the entire surface or a part of the light extraction surface. 1. A surface-emitting light-emitting device characterized in that a monitor light-receiving device is formed by providing a layer and a pn junction in the semiconductor epitaxial layer.
たせたことを特徴とする特許請求の範囲第１項記載の面
発光型発光素子。(2) The surface-emitting light emitting device according to claim 1, wherein the semiconductor epitaxial layer has a lens function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60282762A JPS62143486A (en) | 1985-12-18 | 1985-12-18 | Surface light emitting type luminous element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60282762A JPS62143486A (en) | 1985-12-18 | 1985-12-18 | Surface light emitting type luminous element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62143486A true JPS62143486A (en) | 1987-06-26 |
Family
ID=17656736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60282762A Pending JPS62143486A (en) | 1985-12-18 | 1985-12-18 | Surface light emitting type luminous element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62143486A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02181988A (en) * | 1989-01-09 | 1990-07-16 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Surface emission type semiconductor laser |
| JPH05136530A (en) * | 1991-04-29 | 1993-06-01 | American Teleph & Telegr Co <Att> | Semicoductor laser device |
| US5610412A (en) * | 1994-10-19 | 1997-03-11 | Nippondenso Co., Ltd. | Semiconductor light emitting device with depletion layer |
| EP1501160A2 (en) * | 2003-07-23 | 2005-01-26 | Seiko Epson Corporation | Optoelectronic element and method of manufacturing it, optical module and method of driving it |
| JP2009158688A (en) * | 2007-12-26 | 2009-07-16 | Sony Corp | Light-emitting element assembly and method for manufacturing the same |
-
1985
- 1985-12-18 JP JP60282762A patent/JPS62143486A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02181988A (en) * | 1989-01-09 | 1990-07-16 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Surface emission type semiconductor laser |
| JPH05136530A (en) * | 1991-04-29 | 1993-06-01 | American Teleph & Telegr Co <Att> | Semicoductor laser device |
| US5610412A (en) * | 1994-10-19 | 1997-03-11 | Nippondenso Co., Ltd. | Semiconductor light emitting device with depletion layer |
| EP1501160A2 (en) * | 2003-07-23 | 2005-01-26 | Seiko Epson Corporation | Optoelectronic element and method of manufacturing it, optical module and method of driving it |
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