JPS62143322U - - Google Patents
Info
- Publication number
- JPS62143322U JPS62143322U JP3154486U JP3154486U JPS62143322U JP S62143322 U JPS62143322 U JP S62143322U JP 3154486 U JP3154486 U JP 3154486U JP 3154486 U JP3154486 U JP 3154486U JP S62143322 U JPS62143322 U JP S62143322U
- Authority
- JP
- Japan
- Prior art keywords
- pad
- gate
- sides
- longitudinal direction
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Description
第１図は、この考案によるスイツチ機能を有し
たマイクロ波増幅装置のＦＥＴ部分平面拡大図、
第２図は、従来のマイクロ波増幅装置の平面拡大
図である。
図において、１はゲートパツド、２はソースパ
ツド、３はドレイン、４はゲートフインガー、５
はデバイダ部分、６は分岐された出力側線路、７
は入力側線路、８はバイアホール、９はＦＥＴ部
分、１０，１１はゲートにより分岐された出力側
線路である。なお、各図中同一符号は、同一また
は相当部分を示すものとする。
FIG. 1 is an enlarged partial plan view of the FET of the microwave amplification device with a switch function according to this invention.
FIG. 2 is an enlarged plan view of a conventional microwave amplification device. In the figure, 1 is the gate pad, 2 is the source pad, 3 is the drain, 4 is the gate finger, and 5 is the gate pad.
is the divider part, 6 is the branched output side line, 7
is an input side line, 8 is a via hole, 9 is an FET portion, and 10 and 11 are output side lines branched by gates. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
上に形成されたゲートパツドと、そのパツドの長
手方向の両側に形成されたゲートフインガーと、
ソースパツドと、そのソースパツド内に設けた半
導体基板の接地面と導通させる為に形成した穴と
、ゲートパツドの長手方向の両側にそれぞれ分離
形成されたドレインとを備えたことを特徴とする
モノリシツクマイクロ波増幅装置。 a gate pad formed on the substrate in the direction in which the input microwave is transported straight; gate fingers formed on both sides of the pad in the longitudinal direction;
A monolithic microwave device characterized by having a source pad, a hole formed in the source pad for electrical conduction with the ground plane of a semiconductor substrate, and a drain formed separately on both sides of the gate pad in the longitudinal direction. Amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3154486U JPS62143322U (en) | 1986-03-05 | 1986-03-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3154486U JPS62143322U (en) | 1986-03-05 | 1986-03-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62143322U true JPS62143322U (en) | 1987-09-10 |
Family
ID=30837379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3154486U Pending JPS62143322U (en) | 1986-03-05 | 1986-03-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62143322U (en) |
-
1986
- 1986-03-05 JP JP3154486U patent/JPS62143322U/ja active Pending