JPS62141811A - Surface acoustic wave element - Google Patents

Surface acoustic wave element

Info

Publication number
JPS62141811A
JPS62141811A JP28203285A JP28203285A JPS62141811A JP S62141811 A JPS62141811 A JP S62141811A JP 28203285 A JP28203285 A JP 28203285A JP 28203285 A JP28203285 A JP 28203285A JP S62141811 A JPS62141811 A JP S62141811A
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
hard particles
mixed
silicone adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28203285A
Other languages
Japanese (ja)
Inventor
Yasunobu Iwanaga
岩永 康暢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP28203285A priority Critical patent/JPS62141811A/en
Publication of JPS62141811A publication Critical patent/JPS62141811A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate a considerable change of the variation of a center frequency to temperature and the insertion loss by fixing a surface acoustic wave element chip into a case with an adhesive wheer hard particles selected from groups consisting of metallic materials and inorganic materials are mixed. CONSTITUTION:A piezoelectric substrate 2 is fixed onto a metallic base 1 by adhesion with a silicone adhesive 7 where alumina hard particles 8 having 25-30mu diameter are mixed. Hard particles 8 mixed in the silicone adhesive 7 function as a post for the vertical pressuring force applied at the wire bonding time, and the silicone adhesive functions an absorber for the change of stress due to expansion and contraction in the lengthwise direction at the thermosetting time or the environment change time, thereby preventing the variance of the center frequency and the insertion loss.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は高周波帯域、数千MHz〜数GHzにおけるフ
ィルターとしであるいは周波数源として発振及び共振用
素子として使用される表面弾性波素子に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a surface acoustic wave device used as an oscillation and resonance device as a filter or as a frequency source in a high frequency band, from several thousand MHz to several GHz.

以下余日 〔従来の技術〕 従来の表面弾性波素子を、第2図へ)乃至(C)に示す
。この表面弾性波素子は、以下のようにして製造される
2. Description of the Related Art Conventional surface acoustic wave elements are shown in FIGS. 2) to 2(C). This surface acoustic wave element is manufactured as follows.

まず、水晶、タンタル酸リチウム、ニオブ酸リチウム等
の圧電性基板2上にAt薄膜による交叉指状電極3を、
フォトリングラフィ技術により形成し、その後所定寸法
に切断2分割される。
First, interdigital electrodes 3 made of an At thin film are placed on a piezoelectric substrate 2 made of quartz, lithium tantalate, lithium niobate, etc.
It is formed by photolithography technology, and then cut into two parts with predetermined dimensions.

次にエポキシ系接着剤9を介して金属ベース1上に、圧
電性基板2を固定する。
Next, the piezoelectric substrate 2 is fixed onto the metal base 1 via an epoxy adhesive 9.

次にAt又はAuのボンディングワイヤー5により。Next, with a bonding wire 5 of At or Au.

接続用電極4とリード電極6とを接続する。その後、金
属製キャップ(図示せず)を加熱封着し完成品となる。
Connecting electrode 4 and lead electrode 6 are connected. Thereafter, a metal cap (not shown) is heat-sealed to complete the product.

なお、圧電性基、板2と交叉指状電極3と接続用電極4
とは表面弾性波素子チップを構成している。
In addition, the piezoelectric substrate, the plate 2, the interdigital electrode 3, and the connection electrode 4
constitutes a surface acoustic wave device chip.

また、金属ベース1と金属製キャップとは2表面弾性波
素子を収納するためのケースを構成している。
Further, the metal base 1 and the metal cap constitute a case for housing two surface acoustic wave elements.

即ち表面弾性波素子はその性質上電極表面に保護膜を付
着させる事が出来ない為何等かの形でパqク ツケージ内に収容する事が必要となる。為通常のセラミ
ックス或は金属ベースにエポキシ系或はシリコン系接着
剤を用いて固定させるものである。
That is, because a surface acoustic wave element cannot have a protective film attached to its electrode surface due to its nature, it is necessary to accommodate it in a package cage in some way. Therefore, it is fixed to an ordinary ceramic or metal base using an epoxy or silicone adhesive.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

然しなから、上述しだエポキシ系或はシリコン系接着剤
のみによる表面弾性波素子チップの固定方法では2例え
ばエポキシ系接着剤では熱硬化性である為1弾力性がな
く、接着固定後圧電性基板に応力が発生し電気的特性に
大きな影響を与え。
However, in the above-mentioned method of fixing surface acoustic wave device chips using only epoxy-based or silicone-based adhesives, 2. For example, epoxy-based adhesives are thermosetting, so 1. They have no elasticity and do not exhibit piezoelectric properties after being adhesively fixed. Stress is generated on the substrate and has a major impact on the electrical characteristics.

中心周波数の大幅な変化とロスの増大をまねく欠点があ
る。又、フレキシブルタイプシリコン系接着剤で接着固
定した場合は、熱硬化による応力は少ないものの、接着
固定後各々の電極間を接続する為に行なうワイヤービン
ディング時に印加する超音波エネルギーが不均一となり
接続条件のバラツキが生じ接続部の信頼ヒを損う問題点
がある。
It has the disadvantage of causing a significant change in the center frequency and an increase in loss. In addition, when bonding and fixing with a flexible type silicone adhesive, although there is less stress due to heat curing, the ultrasonic energy applied during wire binding to connect each electrode after bonding and fixing becomes uneven, resulting in poor connection conditions. There is a problem in that variations occur and the reliability of the connection is impaired.

そこで本発明の目的はかかる欠点を除去した表面弾性波
素子を提供することにある。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a surface acoustic wave device that eliminates such drawbacks.

以下余日 〔問題点を解決するだめの手段〕 本発明によれば1表面弾性波素子チップをケース内に収
納してなる表面弾性波素子に於いて、金属質及び無機質
から成るグループから選択された硬質粒子を混入した接
着剤により、前記表面弾性波素子チップを前記ケース内
に固定したことを特徴とする表面弾性波素子が得られる
[Means to Solve the Problem] According to the present invention, in a surface acoustic wave device including one surface acoustic wave device chip housed in a case, a material selected from the group consisting of metal and inorganic material is used. A surface acoustic wave device is obtained, characterized in that the surface acoustic wave device chip is fixed in the case with an adhesive mixed with hard particles.

〔実施例〕〔Example〕

次に本発明について図面を参照して詳細に説明する。第
1図(A)乃至(C)は本発明に係る一実施例である。
Next, the present invention will be explained in detail with reference to the drawings. FIGS. 1A to 1C show an embodiment of the present invention.

水晶、タンタル酸リチウム、ニオブ酸リチウム等の圧電
性基板2上にAt薄膜を用いて、フォトリングラフィ技
術により交叉指状電極3を形成し、その後、所定寸法に
切断分割する。
Using an At thin film on a piezoelectric substrate 2 made of quartz, lithium tantalate, lithium niobate, etc., interdigital electrodes 3 are formed by photolithography, and then cut and divided into predetermined dimensions.

次に金属ペース1上に直径25〜30μでアルミナ製の
硬質粒子8を混合したシリコン系接着剤7を介して圧電
性基板2を接着固定する。数時間乾燥時間を経過後、 
At又はAuのボンディングワイヤー5にて接続用電極
4とリード電極6を接続する。この時シリコン接着剤7
中に混合された硬質粒子8ば、ワイヤービンディング時
に加わる上下方向の加圧力に対しては支柱の役割を果た
し、一方、熱硬化時や環境変化による長手方向の膨張。
Next, the piezoelectric substrate 2 is adhesively fixed onto the metal paste 1 via a silicone adhesive 7 having a diameter of 25 to 30 μ and mixed with hard particles 8 made of alumina. After several hours of drying time,
The connection electrode 4 and the lead electrode 6 are connected with a bonding wire 5 made of At or Au. At this time, silicone adhesive 7
The hard particles 8 mixed therein play the role of supports against the vertical pressing force applied during wire binding, and on the other hand, expand in the longitudinal direction during heat curing or due to environmental changes.

収縮による応力の変化に対しては、シリコン接着剤が吸
収剤の役割を果たすため中心周波数の変動及び挿入ロス
の増大を防止する。
With respect to changes in stress due to shrinkage, the silicone adhesive acts as an absorbent, thereby preventing fluctuations in the center frequency and increases in insertion loss.

尚、硬質粒子の直径は素子等の寸法に応じて選択するこ
とが好ましい。
Note that the diameter of the hard particles is preferably selected depending on the dimensions of the element, etc.

また、接着剤はシリコン系のみならず、熱硬化の程度が
少ないものであれば良い。
Furthermore, the adhesive is not limited to silicone-based adhesives, but may be one that has a low degree of thermosetting.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば2表面弾性波素子の
電気的特性、特に重要な要素である中心周波数の温度に
対する変動幅の大幅な変化及び挿入ロスを除去し、中心
周波数の安定化を図る事ができる。
As explained above, according to the present invention, it is possible to stabilize the center frequency by eliminating the insertion loss and the large change in the fluctuation width of the center frequency with respect to the temperature, which is an especially important element in the electrical characteristics of the two-surface acoustic wave element. It is possible to plan.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(A)は本発明に係わる表面弾性波素子の一実施
例を示す斜視図、第1図の)及び(C)は製造工程中に
於ける表面弾性波素子の断面図である。又。 第2図(A)は従来の表面弾性波素子を示す斜視図。 第2図(B)及び(C)は従来の表面弾性波素子の製造
工程中の断面図である。 1・・・金属ベース、2・・・圧電性基板、3・・・交
叉指状電極、4・・・接続用電極、5・・・ボンディン
グワイヤー、6・・・リード電極、7・・・シリコン系
接着剤。 8・・・硬質班粒子、9・・・エポキシ系接着剤。
FIG. 1(A) is a perspective view showing one embodiment of the surface acoustic wave device according to the present invention, and FIG. 1) and FIG. 1(C) are sectional views of the surface acoustic wave device during the manufacturing process. or. FIG. 2(A) is a perspective view showing a conventional surface acoustic wave element. FIGS. 2(B) and 2(C) are cross-sectional views during the manufacturing process of a conventional surface acoustic wave device. DESCRIPTION OF SYMBOLS 1... Metal base, 2... Piezoelectric substrate, 3... Cross-finger electrode, 4... Connection electrode, 5... Bonding wire, 6... Lead electrode, 7... Silicone adhesive. 8...Hard spot particles, 9...Epoxy adhesive.

Claims (1)

【特許請求の範囲】[Claims] 1、表面弾性波素子チップをケース内に収納してなる表
面弾性波素子に於いて、金属質及び無機質から成るグル
ープから選択された硬質粒子を混入した接着剤により、
前記表面弾性波素子チップを前記ケース内に固定したこ
とを特徴とする表面弾性波素子。
1. In a surface acoustic wave device in which a surface acoustic wave device chip is housed in a case, an adhesive mixed with hard particles selected from the group consisting of metals and inorganics can be used to
A surface acoustic wave device, characterized in that the surface acoustic wave device chip is fixed within the case.
JP28203285A 1985-12-17 1985-12-17 Surface acoustic wave element Pending JPS62141811A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28203285A JPS62141811A (en) 1985-12-17 1985-12-17 Surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28203285A JPS62141811A (en) 1985-12-17 1985-12-17 Surface acoustic wave element

Publications (1)

Publication Number Publication Date
JPS62141811A true JPS62141811A (en) 1987-06-25

Family

ID=17647281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28203285A Pending JPS62141811A (en) 1985-12-17 1985-12-17 Surface acoustic wave element

Country Status (1)

Country Link
JP (1) JPS62141811A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0613177U (en) * 1991-08-23 1994-02-18 日本電気株式会社 Wiring board with chip components
US7218189B2 (en) * 2003-11-04 2007-05-15 Epcos Ag SAW component with adhesive location and use thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0613177U (en) * 1991-08-23 1994-02-18 日本電気株式会社 Wiring board with chip components
US7218189B2 (en) * 2003-11-04 2007-05-15 Epcos Ag SAW component with adhesive location and use thereof

Similar Documents

Publication Publication Date Title
US6329739B1 (en) Surface-acoustic-wave device package and method for fabricating the same
KR20010081032A (en) Surface acoustic wave device and method of producing the same
US6414415B1 (en) Surface acoustic wave device and method for manufacturing the same
JPS62141811A (en) Surface acoustic wave element
US6604267B2 (en) Method for manufacturing a piezoelectric device
JPH07112314B2 (en) Piezoelectric buzzer
JPS5974718A (en) Surface wave filter and method of producing same
JP3389530B2 (en) Semiconductor device
JP2000353934A (en) Surface acoustic wave device
JP3638431B2 (en) Surface acoustic wave device
JP2940159B2 (en) Manufacturing method of encapsulated piezoelectric component
JP2674667B2 (en) Oscillator application device
JPH05251980A (en) Surface acoustic wave device and its mount structure
JP2005057447A (en) Surface acoustic wave device
JPS5827687B2 (en) Dansei Hiyoumenhasouchi
JPH11251867A (en) Surface acoustic wave filter and its manufacture
JPS6256011A (en) Surface wave device
JP3206187B2 (en) Manufacturing method of chip type piezoelectric resonator
JPH0661778A (en) Surface acoustic wave component and its manufacture
KR100241966B1 (en) Frame structure of saw
JPS63127610A (en) Manufacture of surface acoustic wave device
JPS59148419A (en) Thickness shear piezoelectric oscillator
KR100241967B1 (en) Frame structure of saw
JP2003152130A (en) Integrated circuit device
JPS61200712A (en) Supporting structure of surface acoustic wave device