JPH05251980A - Surface acoustic wave device and its mount structure - Google Patents
Surface acoustic wave device and its mount structureInfo
- Publication number
- JPH05251980A JPH05251980A JP4048746A JP4874692A JPH05251980A JP H05251980 A JPH05251980 A JP H05251980A JP 4048746 A JP4048746 A JP 4048746A JP 4874692 A JP4874692 A JP 4874692A JP H05251980 A JPH05251980 A JP H05251980A
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- surface acoustic
- wave device
- case
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000000853 adhesive Substances 0.000 claims abstract description 39
- 230000001070 adhesive effect Effects 0.000 claims abstract description 38
- 238000000605 extraction Methods 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 14
- 230000000644 propagated effect Effects 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 7
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
Landscapes
- Wire Bonding (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、弾性表面波デバイスお
よびその実装構造を小型にて安価に提供する構造に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device and a structure for providing the mounting structure thereof in a small size and at a low cost.
【０００２】[0002]
【従来の技術】従来の弾性表面波デバイスは、図６の側
面断面図と図７の斜視図に示すごとく、圧電基板４１上
にくし形電極よりなる入力トランスジューサ４２、およ
び出力トランスジューサ４３のそれぞれから上記圧電基
板４１の裏面にのびる引き出し電極４４、４５と４６、
４７を設けている。そして、上記入、出力トランスジュ
ーサ４２、４３および入、出力トランスジューサ４２、
４３間の表面波が伝播する部分に空間を設けて、上記圧
電基板４１の表面に絶縁ケース４８を接着剤４９で接着
させたものが、例えば特開昭５８−２０７７０９号公報
（７２３２−５Ｊ）等により公知である。2. Description of the Related Art A conventional surface acoustic wave device comprises a piezoelectric substrate 41, an input transducer 42 and an output transducer 43 each having a comb-shaped electrode, as shown in a side sectional view of FIG. 6 and a perspective view of FIG. Lead electrodes 44, 45 and 46 extending to the back surface of the piezoelectric substrate 41,
47 is provided. The input / output transducers 42 and 43 and the input / output transducer 42,
A space in which a surface wave propagates between 43 is provided, and an insulating case 48 is adhered to the surface of the piezoelectric substrate 41 with an adhesive 49, which is disclosed in, for example, Japanese Unexamined Patent Publication No. 58-207709 (7232-5J). And the like are known.
【０００３】この弾性表面波デバイスをＩＣチップと一
緒に同一基板上に実装した構造は、図８の側面断面図に
示すごとく弾性表面波デバイス５１の引き出し電極４
４、４５と４６、４７をセラミック基板５２の配線パタ
ーン５３にハンダ５４でハンダ付実装後、別の加工ライ
ンで、ＩＣチップ５５を導電性接着剤５６で接着して、
Ａｕ線５７をワイヤーボンディング実装し、信頼性確保
の為セラミックケース５８を接着剤５９で接着封止した
ものである。A structure in which this surface acoustic wave device is mounted together with an IC chip on the same substrate has a structure in which the extraction electrode 4 of the surface acoustic wave device 51 is shown in the side sectional view of FIG.
After mounting 4, 45 and 46, 47 on the wiring pattern 53 of the ceramic substrate 52 with solder 54, the IC chip 55 is bonded with the conductive adhesive 56 on another processing line.
The Au wire 57 is mounted by wire bonding, and the ceramic case 58 is adhesively sealed with an adhesive 59 to ensure reliability.
【０００４】[0004]
【発明が解決しようとする課題】上記のような従来例に
おいては、圧電素子の裏面にのびる引き出し電極を形成
するのに、最低２工程以上の電極形成工程が必要となる
ため、電極引き出し電極形成費用がかかり安価な弾性表
面波デバイスを提供することができない。又、ケースを
接着する時、接着剤が入、出力トランスジューサおよび
弾性表面波の伝播部に流れ出してしまい特性劣化をまね
くのを防止するためにケースの接着位置は入、出力トラ
ンスジューサおよび弾性表面波の伝播部から離さなけれ
ばならず、その分大きくなってしまい小形の弾性表面波
デバイスを提供することができない。さらに又、弾性表
面波デバイスはハンダ付実装で、ＩＣチップはワイヤー
ボンディング実装という別々の実装工程で実装しなけれ
ばならず、実装工程が複雑となり、実装費用が高くなっ
てしまう。さらに又、弾性表面波デバイスの四端がハン
ダで堅固に固定された構造であり、弾性表面波デバイス
と基板のとの熱膨張率に差異があると、温度によって弾
性表面波デバイスに、引張り、または圧縮等の応力が加
わり特性劣化をきたす。このため、用いる基板は、弾性
表面波デバイスの熱膨張率にできるだけ近いものにする
必要があり、おのずと基板の材質が限定されてしまうた
め、高価な基板になってしまう。In the conventional example as described above, since at least two electrode forming steps are required to form the lead electrode extending to the back surface of the piezoelectric element, the electrode lead electrode formation is required. It is impossible to provide a surface acoustic wave device which is expensive and inexpensive. In addition, when the case is bonded, the adhesive is applied to the case and the output transducer and the surface acoustic wave are adhered to the case in order to prevent the characteristics from deteriorating due to the flow of the adhesive into the output transducer and the surface acoustic wave propagation part. It must be separated from the propagating portion, and it becomes large accordingly, so that a small-sized surface acoustic wave device cannot be provided. Furthermore, the surface acoustic wave device must be mounted by soldering, and the IC chip must be mounted by separate mounting processes such as wire bonding mounting, which complicates the mounting process and increases the mounting cost. Furthermore, the four ends of the surface acoustic wave device are firmly fixed with solder, and if there is a difference in the coefficient of thermal expansion between the surface acoustic wave device and the substrate, the surface acoustic wave device is pulled by the temperature, Alternatively, stress such as compression is applied to cause deterioration of characteristics. Therefore, the substrate to be used needs to be as close as possible to the coefficient of thermal expansion of the surface acoustic wave device, and naturally the material of the substrate is limited, resulting in an expensive substrate.
【０００５】本発明は、上記のような欠点を除すべくな
されたものであり、圧電基板の１つの面に入、出力トラ
ンスジューサと外部接続端子を設けることにより、外部
接続電極を形成する費用を削減できる。又、ケースの接
着部に凹部を設けていることおよび、ケース接合部周辺
にダムを設けていることにより、ケースの接着位置を出
力トランスジューサおよび弾性表面波の伝播部から離す
必要がなくなり、小形の弾性表面波デバイスを提供する
ことができる。さらに又、ワイヤーボンディング実装で
実装できることにより実装工程が複雑とならない。さら
に又、基板材質を限定する必要もないことにより、安価
な弾性表面波デバイスとその実装構造を提供しようとす
るものである。The present invention has been made in order to eliminate the above-mentioned drawbacks, and the cost for forming an external connection electrode by providing an output transducer and an external connection terminal on one surface of a piezoelectric substrate is reduced. Can be reduced. In addition, since the case is provided with a concave portion and the case is provided with a dam around the joint, it is not necessary to separate the case adhesion position from the output transducer and the surface acoustic wave propagation part, and the small size is achieved. A surface acoustic wave device can be provided. Furthermore, the mounting process does not become complicated because it can be mounted by wire bonding. Furthermore, it is an object of the present invention to provide an inexpensive surface acoustic wave device and its mounting structure because it is not necessary to limit the substrate material.
【０００６】[0006]
【課題を解決するための手段】 本発明の弾性表面波
デバイスは、圧電基板上にくし形電極よりなる入力およ
び出力トランスジューサを備え、前記入、出力トランス
ジューサおよび入、出力トランスジューサ間と空間を形
成するよう前記圧電基板表面にケースを設けてなる弾性
表面波デバイスにおいて、前記入力および出力トランス
ジューサと同一表面上で外方にある外部接続電極と前記
入力および出力トランスジューサと前記接続電極が引き
出し電極で接続され、さらに、ケースを接着する接着剤
内にスペーサとなるボールを含有し、さらに、ケース接
着部の内外面に凹部を設け、さらに、入、出力トランス
ジューサと同一表面上のケース接合部周辺にダムを設け
ていることを特徴とする。A surface acoustic wave device of the present invention comprises input and output transducers composed of comb-shaped electrodes on a piezoelectric substrate, and forms a space between the input and output transducers and between the input and output transducers. In the surface acoustic wave device having the case on the surface of the piezoelectric substrate, the external connection electrode on the same surface as the input and output transducers, the input and output transducers, and the connection electrode are connected by the extraction electrode. In addition, a ball that acts as a spacer is included in the adhesive that bonds the case, and a recess is provided on the inner and outer surfaces of the case adhesion part. Furthermore, a dam is formed around the case joint on the same surface as the input and output transducers. It is characterized by being provided.
【０００７】 本発明の弾性表面波デバイスの実装構
造は、弾性表面波デバイスの外部接続電極と基板の配線
パターンがボンディング実装で接続され、さらに、弾性
表面波デバイスと基板を接着する接着剤が柔軟性を有す
る接着剤で、さらに、弾性表面波デバイスの一部のみを
接着剤で基板に接着したこと、さらに、接着部周辺にダ
ムを設けていることを特徴とする。In the mounting structure of the surface acoustic wave device of the present invention, the external connection electrode of the surface acoustic wave device and the wiring pattern of the substrate are connected by bonding mounting, and the adhesive for adhering the surface acoustic wave device and the substrate is flexible. Of the surface acoustic wave device, and only a part of the surface acoustic wave device is bonded to the substrate with the adhesive, and a dam is provided around the bonded portion.
【０００８】[0008]
【実施例】本発明の弾性表面波デバイスの一実施例を、
圧電基板に水晶を用いた例を、図１の側面断面図と、図
２の斜視図により説明する。水晶材からなる圧電基板１
の表面にくし形電極よりなる入力トランスジューサ２が
形成され、入力トランスジューサ２から少し離れて、く
し形電極よりなる出力トランスジューサ３が設けられて
いる。それぞれの入、出力トランスジューサ２、３から
同一表面上で外方にありワイヤーボンディング実装でき
る外部接続電極４、５、６、７が引き出し電極８、９、
１０、１１により接続されている。以上の構成は、表面
を研磨した圧電基板１上に、Ａｌ等の金属を、蒸着、ス
パッタ等により膜付けした後、フォトリソグラフィ加工
により、同時に形成されている。EXAMPLE An example of the surface acoustic wave device of the present invention will be described.
An example of using quartz for the piezoelectric substrate will be described with reference to the side sectional view of FIG. 1 and the perspective view of FIG. Piezoelectric substrate 1 made of crystal material
An input transducer 2 composed of a comb-shaped electrode is formed on the surface of, and an output transducer 3 composed of a comb-shaped electrode is provided at a distance from the input transducer 2. External connection electrodes 4, 5, 6, and 7 which are external to the input and output transducers 2 and 3 on the same surface and can be mounted by wire bonding are extraction electrodes 8 and 9.
It is connected by 10 and 11. The above structure is formed at the same time by photolithography processing after depositing a metal such as Al on the piezoelectric substrate 1 whose surface has been polished by vapor deposition, sputtering or the like.
【０００９】次に、入力トランスジューサ２と出力トラ
ンスジューサ３および、それらの間の空間に発生する弾
性表面波の振動をゴミ等から防ぐために、水晶材からな
るケース１２を被せる。Next, in order to prevent the vibration of the surface acoustic waves generated in the input transducer 2 and the output transducer 3 and the space between them from dust and the like, a case 12 made of a quartz material is covered.
【００１０】ケース１２は、圧電基板１の弾性表面波が
伝播する表面に対し、空間を持たせるために、凹部１３
を設け、凹部１３の周辺の接着部を引き出し電極８、
９、１０、１１上に当接し、接着剤１４で接着する。The case 12 has a recess 13 in order to provide a space on the surface of the piezoelectric substrate 1 on which the surface acoustic wave propagates.
Is provided, and the adhesion portion around the recess 13 is drawn out by an electrode 8,
It abuts on 9, 10, 11 and is bonded with an adhesive 14.
【００１１】凹部１３は、平板状の水晶材を、フォトリ
ソグラフィ加工によって、ハーフエッチングする等の方
法で形成することができる。The recess 13 can be formed by a method such as half-etching a flat crystal material by photolithography.
【００１２】なお、圧電基板１の弾性表面波が伝播する
表面と空間を持たせる他の方法として、図３に示すごと
く、ケース１５は、平板状のまま用いて、接着剤１６内
にスペーサーとなる。直径が数十μｍ〜数百μｍ程度の
セラミック等からなるボール１７を混入させておき、そ
のボール１７により、空間を確保しても良い。As another method of providing a surface and a space on which the surface acoustic wave of the piezoelectric substrate 1 propagates, as shown in FIG. 3, the case 15 is used in a flat plate shape, and a spacer is provided in the adhesive 16. Become. A ball 17 made of ceramic or the like having a diameter of several tens of μm to several hundreds of μm may be mixed and the space may be secured by the ball 17.
【００１３】次に、ケースを貼り付ける際の、接着剤の
にじみ出し対策について説明する。接着剤が、弾性表面
波の伝播部までにじみ出すと、特性劣化をきたす。又、
外部接続電極上ににじみ出すと、外部接続電極上にワイ
ヤーボンディングすることができなくなり、弾性表面波
デバイスの実装時に支障が生じる。Next, a measure for exuding the adhesive when the case is attached will be described. If the adhesive oozes out to the propagation portion of the surface acoustic wave, the characteristics will deteriorate. or,
If it oozes out onto the external connection electrode, wire bonding cannot be performed on the external connection electrode, which causes a problem when the surface acoustic wave device is mounted.
【００１４】そこでその対策として、ケース１２の接着
部の内、外面に凹部１８を設けると、接着時に接着剤が
にじみ出し難くなる。Therefore, if a recess 18 is provided on the inner surface or the outer surface of the bonded portion of the case 12 as a countermeasure against this, the adhesive is less likely to ooze out during bonding.
【００１５】さらに、にじみ出し防止用のダム１９を、
圧電基板１上に設けるとダム１９で接着剤の流れ出しを
防止でき、さらに、接着時に接着剤がにじみ出し難くな
る。なお、以上の実施例において、圧電基板１およびケ
ース１２の双方に水晶材を用いた例を示したが、本発明
はそれに限定されるものでなく、圧電基板材料として
は、圧電セラミックやタンタル酸リチウム、ニオブ酸リ
チウム等の他の圧電材料を用いても良い。Further, a dam 19 for preventing oozing out is
When it is provided on the piezoelectric substrate 1, the dam 19 can prevent the adhesive from flowing out, and the adhesive is less likely to ooze out at the time of bonding. In addition, in the above embodiments, an example in which a crystal material is used for both the piezoelectric substrate 1 and the case 12 is shown, but the present invention is not limited thereto, and as the piezoelectric substrate material, piezoelectric ceramic or tantalum acid is used. Other piezoelectric materials such as lithium and lithium niobate may be used.
【００１６】ケース材は、圧電基材と同材を用いるのが
望ましい。これは圧電基板とケース材の熱膨張率が異な
ると周囲温度の変化時点で、圧電基板に、圧縮もしくは
引っ張り等の応力が加わって、伝播周波数が変化する等
の特性劣化をきたすからである。The case material is preferably the same material as the piezoelectric substrate. This is because if the piezoelectric substrate and the case material have different coefficients of thermal expansion, stress such as compression or tension is applied to the piezoelectric substrate when the ambient temperature changes, resulting in characteristic deterioration such as a change in propagation frequency.
【００１７】そこで、熱膨張率が近ければケースに他の
材質を用いてもかまわない。Therefore, other materials may be used for the case as long as the coefficients of thermal expansion are close to each other.
【００１８】次に、上記本発明の弾性表面波デバイスを
基板に実装した実装構造を、図４の側面断面図で説明す
る。セラミック基板２１に弾性表面波デバイス２２およ
びＩＣチップ２３を導電性接着剤２４で接着した後、弾
性表面波デバイス２２の外部接続電極４〜７とＩＣチッ
プ２３の電極２５とセラミック基板２１の配線パターン
２６をＡｕ線２７でワイヤーボンディングする。その
後、ＩＣチップ２２および弾性表面波を外乱から保護
し、信頼性を確保する為セラミックケース２８を接着剤
２９で接着封止する。Next, a mounting structure in which the surface acoustic wave device of the present invention is mounted on a substrate will be described with reference to a side sectional view of FIG. After the surface acoustic wave device 22 and the IC chip 23 are bonded to the ceramic substrate 21 with the conductive adhesive 24, the external connection electrodes 4 to 7 of the surface acoustic wave device 22, the electrodes 25 of the IC chip 23, and the wiring pattern of the ceramic substrate 21. 26 is wire-bonded with an Au wire 27. Then, in order to protect the IC chip 22 and the surface acoustic wave from disturbance and to secure reliability, the ceramic case 28 is adhesively sealed with an adhesive 29.
【００１９】弾性表面波デバイス２２とセラミック基板
２１との熱膨張率の差異による特性劣化の対策として、
導電性接着剤２４は、硬化後柔軟性のあるものを用いれ
ばよい。これは、熱膨張率の差異による弾性表面波デバ
イスへの圧縮もしくは引張り等の応力が、接着剤の柔軟
性により緩和できるためである。As a measure against characteristic deterioration due to a difference in coefficient of thermal expansion between the surface acoustic wave device 22 and the ceramic substrate 21,
The conductive adhesive 24 may be flexible after being cured. This is because the stress such as compression or tension on the surface acoustic wave device due to the difference in the coefficient of thermal expansion can be relaxed by the flexibility of the adhesive.
【００２０】他の対策として、図５に示すごとく、弾性
表面波デバイス３１の一部のみを接着剤３２で接着して
もよい。接着の際、接着剤が広がり、広範囲に接着され
るのを防止する為に、セラミック基板３３の配線パター
ン３４と同時に、厚膜印刷等で形成した接着剤流れ出し
防止ダム３５を設けている。As another measure, as shown in FIG. 5, only a part of the surface acoustic wave device 31 may be bonded with the adhesive 32. At the time of bonding, in order to prevent the adhesive from spreading and bonding in a wide area, an adhesive outflow prevention dam 35 formed by thick film printing or the like is provided at the same time as the wiring pattern 34 of the ceramic substrate 33.
【００２１】[0021]
【発明の効果】このような本発明の弾性表面波デバイス
および実装構造によれば、圧電素子の裏面にのびる引き
出し電極を形成する費用がかからないため、従来品に比
べ非常に安価な弾性表面波デバイスを提供することがで
きる。又ケースの接着部に凹部を設けていることおよ
び、ケース接合部周辺にダムを設けていることにより、
ケースの接着位置を出力トランスジューサおよび弾性表
面波の伝播部から離す必要がなくなり、小形の弾性表面
波デバイスを提供することができる。さらに又、くし形
電極と同一面に外部接続電極を設けているため、ＩＣチ
ップの基板実装と同じ加工工程で、弾性表面波デバイス
を基板実装できる構造であり、従来の実装工程に比べ複
雑な実装工程とならない。さらに又、弾性表面波デバイ
スと基板との熱膨張率の差異による応力を、接着剤の柔
軟性とか一部の接着により緩和できる為、基板材質を限
定することもなく、実装費用の削減に寄与するものであ
る。According to the surface acoustic wave device and the mounting structure of the present invention as described above, since it is not necessary to form the lead electrode extending to the back surface of the piezoelectric element, the surface acoustic wave device is much cheaper than the conventional product. Can be provided. In addition, by providing a recess in the adhesive part of the case and providing a dam around the case joint part,
Since it is not necessary to separate the bonding position of the case from the output transducer and the surface acoustic wave propagation portion, a small surface acoustic wave device can be provided. Furthermore, since the external connection electrode is provided on the same surface as the comb-shaped electrode, the surface acoustic wave device can be mounted on the substrate in the same processing step as that of mounting the IC chip on the substrate, which is more complicated than the conventional mounting step. Not a mounting process. Furthermore, since the stress due to the difference in the coefficient of thermal expansion between the surface acoustic wave device and the substrate can be relieved by the flexibility of the adhesive or a part of the adhesive, the substrate material is not limited and the mounting cost is reduced. To do.
【図１】本発明の弾性表面波デバイスの一実施例を示す
側面断面図である。FIG. 1 is a side sectional view showing an embodiment of a surface acoustic wave device of the present invention.
【図２】本発明の弾性表面波デバイスの一実施例のケー
スを取り除いた状態を示す斜視図である。FIG. 2 is a perspective view showing a state in which a case of an embodiment of the surface acoustic wave device of the present invention is removed.
【図３】本発明の圧電基板の弾性表面波が伝播する表面
と空間を持たせる他の方法を示す側面断面図である。FIG. 3 is a side cross-sectional view showing another method of providing a surface and a space for propagation of a surface acoustic wave of the piezoelectric substrate of the present invention.
【図４】本発明の弾性表面波デバイスの実装構造の一実
施例を示す側面断面図である。FIG. 4 is a side sectional view showing an embodiment of a surface acoustic wave device mounting structure of the present invention.
【図５】本発明の弾性表面波デバイスの基板への他の接
着構造を示す側面断面図である。FIG. 5 is a side sectional view showing another bonding structure of the surface acoustic wave device of the present invention to a substrate.
【図６】従来の弾性表面波デバイスを示す側面断面図で
ある。FIG. 6 is a side sectional view showing a conventional surface acoustic wave device.
【図７】従来の弾性表面波デバイスのケースを取り除い
た状態を示す斜視図である。FIG. 7 is a perspective view showing a state in which a case of a conventional surface acoustic wave device is removed.
【図８】従来の弾性表面波デバイスの実装構造を示す側
面断面図である。FIG. 8 is a side sectional view showing a conventional mounting structure of a surface acoustic wave device.
１ 圧電基板 ２ 入力トランスジューサ ３ 出力トランスジユーサ ４、５、６、７ 外部接続電極 ８、９、１０、１１ 引き出し電極 １２ ケース １３ 凹部 １４ 接着剤 １５ ケース １６ 接着剤 １７ ボール １８ 凹部 １９ ダム ２１ セラミック基板 ２２ 弾性表面波デバイス ２３ ＩＣチップ ２４ 導電性接着剤 ２５ 電極 ２６ 配線パターン ２７ Ａｕ線 ２８ セラミックケース ２９ 接着剤 ３１ 弾性表面波デバイス ３２ 接着剤 ３３ セラミック基板 ３４ 配線パターン ３５ ダム ４１ 圧電基板 ４２ 入力トランスジューサ ４３ 出力トランスジューサ ４４、４５、４６、４７ 引き出し電極 ４８ 絶縁ケース ４９ 接着剤 ５１ 弾性表面波デバイス ５２ セラミック基板 ５３ 配線パターン ５４ ハンダ ５５ ＩＣチップ ５６ 接着剤 ５７ Ａｕ線 ５８ セラミックケース ５９ 接着剤 1 Piezoelectric Substrate 2 Input Transducer 3 Output Transducer 4, 5, 6, 7 External Connection Electrode 8, 9, 10, 11 Extraction Electrode 12 Case 13 Recess 14 Adhesive 15 Case 16 Adhesive 17 Ball 18 Recess 19 Dam 21 Ceramic Substrate 22 Surface Acoustic Wave Device 23 IC Chip 24 Conductive Adhesive 25 Electrode 26 Wiring Pattern 27 Au Wire 28 Ceramic Case 29 Adhesive 31 Surface Acoustic Wave Device 32 Adhesive 33 Ceramic Substrate 34 Wiring Pattern 35 Dam 41 Piezoelectric Substrate 42 Input Transducer 43 Output Transducer 44, 45, 46, 47 Extraction Electrode 48 Insulation Case 49 Adhesive 51 Surface Acoustic Wave Device 52 Ceramic Substrate 53 Wiring Pattern 54 Solder 55 IC Chip 56 Adhesive 57 Au Wire 5 Ceramic case 59 adhesive
Claims (8)
び出力トランスジューサを備え、前記入、出力トランス
ジューサおよび入、出力トランスジューサ間と空間を形
成するよう前記圧電基板表面にケースを設けてなる弾性
表面波デバイスにおいて、前記入力および出力トランス
ジューサと同一表面上で外方にある外部接続電極と前記
入力および出力トランスジューサと前記接続電極が引き
出し電極で接続されていることを特徴とする弾性表面波
デバイス。1. An elastic surface comprising input and output transducers comprising comb electrodes on a piezoelectric substrate, and a case provided on the surface of the piezoelectric substrate so as to form a space between the input and output transducers and the input and output transducers. A surface acoustic wave device, characterized in that in the wave device, an external connection electrode on the same surface as the input and output transducers, the input and output transducers, and the connection electrode are connected to each other by an extraction electrode.
て、ケースを接着する接着剤内にスペーサとなるボール
を含有していることを特徴とする弾性表面波デバイス。2. The surface acoustic wave device according to claim 1, wherein a ball serving as a spacer is contained in an adhesive agent for adhering the case.
て、ケース接着部の内外面に凹部を設けていることを特
徴とする弾性表面波デバイス。3. The surface acoustic wave device according to claim 1, wherein a concave portion is provided on the inner and outer surfaces of the case adhesion portion.
て、入、出力トランスジューサと同一表面上のケース接
合部周辺にダムを設けていることを特徴とする弾性表面
波デバイス。4. The surface acoustic wave device according to claim 1, wherein a dam is provided around the case joint on the same surface as the input and output transducers.
実装するにあたり、弾性表面波デバイスの外部接続電極
と基板の配線パターンがボンディング実装で接続されて
いることを特徴とする弾性表面波デバイスの実装構造。5. When mounting the surface acoustic wave device according to any one of claims 1 to 4, an external connection electrode of the surface acoustic wave device and a wiring pattern of the substrate are connected by bonding mounting. Device mounting structure.
構造において、弾性表面波デバイスと基板を接着する接
着剤が柔軟性を有する接着剤であることを特徴とする弾
性表面波デバイスの実装構造。6. The surface acoustic wave device mounting structure according to claim 5, wherein the adhesive for adhering the surface acoustic wave device and the substrate is a flexible adhesive. Construction.
構造において、弾性表面波デバイスの一部のみを接着剤
で基板に接着したことを特徴とする弾性表面波デバイス
の実装構造。7. The mounting structure for a surface acoustic wave device according to claim 5, wherein only a part of the surface acoustic wave device is bonded to the substrate with an adhesive.
構造において、接着部周辺にダムを設けていることを特
徴とする弾性表面波デバイスの実装構造。8. The surface acoustic wave device mounting structure according to claim 7, wherein a dam is provided around the bonding portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4048746A JPH05251980A (en) | 1992-03-05 | 1992-03-05 | Surface acoustic wave device and its mount structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4048746A JPH05251980A (en) | 1992-03-05 | 1992-03-05 | Surface acoustic wave device and its mount structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05251980A true JPH05251980A (en) | 1993-09-28 |
Family
ID=12811852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4048746A Pending JPH05251980A (en) | 1992-03-05 | 1992-03-05 | Surface acoustic wave device and its mount structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05251980A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5459368A (en) * | 1993-08-06 | 1995-10-17 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device mounted module |
| US5920142A (en) * | 1996-03-08 | 1999-07-06 | Matsushita Electric Industrial Co., Ltd. | Electronic part and a method of production thereof |
| US7315455B2 (en) | 2002-08-29 | 2008-01-01 | Fujitsu Media Devices Ltd. | Surface-mounted electronic component module and method for manufacturing the same |
| US7999374B2 (en) | 2007-03-27 | 2011-08-16 | Fujitsu Limited | Semiconductor component having adhesive squeeze-out prevention configuration and method of manufacturing the same |
-
1992
- 1992-03-05 JP JP4048746A patent/JPH05251980A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5459368A (en) * | 1993-08-06 | 1995-10-17 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device mounted module |
| US5920142A (en) * | 1996-03-08 | 1999-07-06 | Matsushita Electric Industrial Co., Ltd. | Electronic part and a method of production thereof |
| US7315455B2 (en) | 2002-08-29 | 2008-01-01 | Fujitsu Media Devices Ltd. | Surface-mounted electronic component module and method for manufacturing the same |
| US7999374B2 (en) | 2007-03-27 | 2011-08-16 | Fujitsu Limited | Semiconductor component having adhesive squeeze-out prevention configuration and method of manufacturing the same |
| US8421219B2 (en) | 2007-03-27 | 2013-04-16 | Fujitsu Limited | Semiconductor component having adhesive squeeze-out prevention configuration and method of manufacturing the same |
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