JP2003152130A - Integrated circuit device - Google Patents

Integrated circuit device

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Publication number
JP2003152130A
JP2003152130A JP2001352451A JP2001352451A JP2003152130A JP 2003152130 A JP2003152130 A JP 2003152130A JP 2001352451 A JP2001352451 A JP 2001352451A JP 2001352451 A JP2001352451 A JP 2001352451A JP 2003152130 A JP2003152130 A JP 2003152130A
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Prior art keywords
integrated circuit
substrate
acoustic wave
surface acoustic
circuit device
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Pending
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JP2001352451A
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Japanese (ja)
Inventor
Yasunobu Oikawa
泰伸 及川
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Tdk Corp
ティーディーケイ株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements

Abstract

PROBLEM TO BE SOLVED: To obtain a surface acoustic wave device in which bonding strength of a cap for hermetically sealing the surface acoustic wave element mounted on a package substrate to the package substrate is enhanced. SOLUTION: The integrated circuit device comprises a surface acoustic wave element having a specified conductive pattern and element electrodes formed on a piezoeletric substrate, a package substrate 12 on which substrate electrodes 12a of a conductor material mixed with a glass material are formed and a coating layer 23 of glass material is formed annularly in a cap bonding region including a part of the substrate electrodes 12a and the surface acoustic wave element is mounted while connecting the substrate electrodes 12a electrically with the element electrode, and a cap 14 being bonded to the package substrate 12 through the adhesive material 26 located on the coating layer 23 and sealing the surface acoustic wave element hermetically.

Description

【発明の詳細な説明】 【0001】 【発明の属する技術分野】本発明は、集積回路装置に関し、特に、集積回路素子がパッケージ基板に気密封止される集積回路装置に適用して有効な技術に関するものである。 BACKGROUND OF THE INVENTION [0001] [Technical Field of the Invention The present invention relates to integrated circuit devices, particularly, to a technique effectively applied to an integrated circuit device in which an integrated circuit device is hermetically sealed in a package substrate it relates. 【0002】 【従来の技術】今日、目覚ましい普及を見せている携帯電話に代表される移動体通信機器は、小型化が急速に進められている。 [0002] Today, mobile communication devices such as cellular phone, which is showing a remarkable spread, miniaturization has been advanced rapidly. それに伴って、移動体通信機器に使用される部品には、小型化および高性能化が要求されている。 Along with this, the components used in mobile communication equipment, miniaturization and high performance are required. 【0003】移動体通信機器における信号の分岐、生成を行うために、分波器が用いられている。 In order to perform signal branch, the product in a mobile communication device, the duplexer is used. 分波器は、帯域通過フィルタ、帯域阻止フィルタ、あるいはこれらの組み合わせにより構成されたものがあるが、一層の小型化および高性能化を達成するために、相互に異なる帯域中心周波数を有する2つの弾性表面波素子が搭載された弾性表面波装置の用いられたものがある。 Duplexer, a bandpass filter, band elimination filter, or there are those constituted by a combination of these, in order to achieve further miniaturization and high performance, the two having a band center frequencies different from each other there is one surface acoustic wave device used with a surface acoustic wave device mounted. 【0004】ここで、図7に従来の弾性表面波装置における要部の断面図を示す。 [0004] Here, a cross-sectional view of a main part of a conventional surface acoustic wave device in FIG. 【0005】図示するように、たとえばセラミック製のパッケージ基板112上には、ボンディングワイヤ11 [0005] As shown, on a ceramic package substrate 112, for example, the bonding wire 11
3の一端が接合される基板電極112aが形成されている。 Substrate electrode 112a which 3 of one end is joined is formed. 基板電極112aは、たとえば銀や銅からなる基部層122と、基部層122上にたとえばニッケルメッキ層124および金メッキ層125が積層されたメッキ層とから構成されている。 Substrate electrode 112a is, for example a base layer 122 made of silver or copper, the base layer 122 on, for example, nickel-plated layer 124 and the gold plating layer 125 is composed of the stacked plated layer. そして、メッキ層124,12 Then, the plating layer 124,12
5上に樹脂製の接着材126が塗布されており、パッケージ基板112上に搭載された弾性表面波素子を気密封止するキャップ(封止部材)114はこの接着材126 5 on the adhesive material 126 made of resin are applied, the cap (sealing member) 114 for hermetically sealing the surface acoustic wave element mounted on the package substrate 112 This adhesive 126
を介してパッケージ基板112に接着されている。 It is bonded to the package substrate 112 via a. 【0006】 【発明が解決しようとする課題】このような弾性表面波装置において、接着材はキャップとの接着領域に環状に塗布されるので、接着材は基板電極および基板電極の形成されていないパッケージ基板の下地部分にも塗布されることになる。 [0006] In THE INVENTION Problem to be Solved] The surface acoustic wave device, since the adhesive is applied to the annular bonding area of ​​the cap, the adhesive is not formed in the substrate electrode and the substrate electrode also to be applied to the underlying portion of the package substrate. 【0007】ここで、樹脂製の接着材は、セラミック製のパッケージ基板そのものとの接着強度は強いが、メッキ層や基板電極といった金属との接着強度は弱い。 [0007] Here, a resin adhesive, the adhesive strength between the ceramic package substrate itself is strong, the adhesion strength between the metal such as plated layer and the substrate electrode is weak. したがって、接着材でパッケージ基板に接着されたキャップは、基板電極の形成されていないパッケージ基板の下地部分では十分に強固な接着力で接着されるものの、基板電極の形成された部分では所望の接着力では接着されない。 Therefore, the cap that is bonded to the package substrate by an adhesive material, although is adhered sufficiently strong adhesion with the underlying portion of the package substrate not formed with the substrate electrode, the desired adhesion is formed portion of the substrate electrode not adhered to in the force. 【0008】すると、基板電極と接着材との間から水分が浸入し、弾性表面波装置としての信頼性が大きく毀損される。 [0008] Then, the water infiltrates from between the substrate electrode and the adhesive material, the reliability of the surface acoustic wave device is greatly impaired. 【0009】そして、このような問題は、弾性表面波装置のみならず、パッケージ基板上に集積回路素子が搭載された集積回路装置全般に当てはまる問題である。 [0009] Then, such a problem, not only the surface acoustic wave device, integrated circuit device on the package substrate is an issue true for mounting integrated circuit devices in general. 【0010】そこで、本発明は、パッケージ基板に搭載された集積回路素子を気密封止する封止部材のパッケージ基板に対する接着強度の向上を図ることのできる集積回路装置を提供することを目的とする。 [0010] Therefore, an object of the present invention to provide an integrated circuit device capable of improving the adhesion strength to the package substrate of the sealing member for hermetically sealing the mounted integrated circuit device in the package substrate . 【0011】 【課題を解決するための手段】上記課題を解決するため、本発明に係る集積回路装置は、素子基板上に所定の導電パターンおよび素子電極が形成された集積回路素子と、ガラス材の混入された導体材からなる基板電極が形成されるとともに基板電極上の一部を含む封止部材接着領域にガラス材からなる被膜層が環状に形成され、基板電極が素子電極と電気的に接続されて集積回路素子が搭載されたパッケージ基板と、被膜層上に位置する接着材を介してパッケージ基板に接着され、集積回路素子を気密封止する封止部材とを有することを特徴とする。 [0011] In order to solve the above problems SUMMARY OF THE INVENTION The integrated circuit device according to the present invention, an integrated circuit device in which a predetermined conductive pattern and the element electrodes are formed on the element substrate, a glass material coating layer comprising a glass material is formed in an annular shape with the substrate electrode made of mixed conductors material is formed in the sealing member bonding region including a part of the substrate electrode, a substrate electrode element electrodes and electrically a package substrate connected to the integrated circuit element is mounted, it is bonded to the package substrate through the adhesive material positioned on the coating layer, and having a sealing member for hermetically sealing the integrated circuit element . 【0012】このような発明によれば、ガラス材の混入された基板電極上にガラス材からなる被膜層を形成して両者を強固に接着し、当該被膜層上に位置する接着材を介して封止部材をパッケージ基板に接着しているので、 According to this invention, by forming a coating layer made of a glass material onto entrained substrate electrodes of the glass material is strongly adhered to each other via an adhesive positioned on the coating layer since the adhesive sealing member to the package substrate,
封止部材のパッケージ基板に対する接着強度を大幅に向上させることが可能になる。 The adhesive strength to the package substrate of the sealing member makes it possible to greatly improve. 【0013】 【発明の実施の形態】以下、本発明の実施の形態を、図面を参照しつつさらに具体的に説明する。 DETAILED DESCRIPTION OF THE INVENTION Hereinafter, the embodiments of the present invention will be described more specifically with reference to the accompanying drawings. ここで、添付図面において同一の部材には同一の符号を付しており、 Here, it is denoted by the same reference numerals to the same members in the accompanying drawings,
また、重複した説明は省略されている。 Further, duplicate description is omitted. なお、発明の実施の形態は、本発明が実施される特に有用な形態としてのものであり、本発明がその実施の形態に限定されるものではない。 Note that the embodiments of the invention are of a particularly useful embodiment of the present invention is implemented, the present invention is not limited to the embodiments. 【0014】図1は本発明の一実施の形態である弾性表面波素子がパッケージ化された弾性表面波装置を示す断面図、図2は図1の弾性表面波装置のパッケージ基板を弾性表面波素子とともに示す平面図、図3は図1の弾性表面波装置の要部を示す断面図、図4は図1の弾性表面波素子の回路を示す概略図、図5は図1の弾性表面波素子に形成された回路の一部を示す平面図、図6はパッケージ基板に対するキャップのせん断接着強度を示すグラフである。 [0014] Figure 1 is a sectional view, FIG. 2 is a surface acoustic wave package substrate of the surface acoustic wave device of FIG. 1 showing a surface acoustic wave element according to an embodiment is packaged surface acoustic wave device of the present invention plan view with elements, FIG. 3 is a sectional view showing a main portion of a surface acoustic wave device of FIG. 1, FIG. 4 is a schematic diagram showing a circuit of a surface acoustic wave device of FIG. 1, FIG. 5 is a surface acoustic wave in FIG. 1 plan view showing a part of a circuit formed in the device, FIG 6 is a graph showing the shear bond strength of the cap to the package substrate. 【0015】図1に示す弾性表面波装置10は、圧電基板(素子基板)上に所定の導電パターンおよび素子電極が形成された弾性表面波素子(集積回路素子)11が、 The surface acoustic wave device 10 shown in FIG. 1, a piezoelectric substrate (device substrate) on which it is formed a predetermined conductive pattern and the element electrode surface acoustic wave device (integrated circuit device) 11,
単層あるいは複数層からなり所定の配線パターンや回路パターンの形成されたLTCC(Low Temper Made of a single layer or a plurality of layers having wiring patterns and circuit patterns LTCC formed of (Low Temper
ature Cofired Ceramics−低温焼成セラミックス基板−)やアルミナなどセラミック製のパッケージ基板12に搭載されたものである。 ature Cofired Ceramics- low-temperature co-fired ceramic substrate -) or alumina which has been mounted on the package substrate 12 made of ceramic such. なお、 It should be noted that,
パッケージ基板は、セラミック製ではなく樹脂製であってもよい。 The package substrate may be made of resin instead of ceramic. 【0016】そして、弾性表面波素子11における導電パターンの形成された面と反対面がパッケージ基板12 [0016] Then, the opposite surface is the package substrate 12 and formed a surface of the conductive pattern in the surface acoustic wave element 11
の素子搭載面に接着されている。 It is bonded to the element mounting surface. 【0017】パッケージ基板12には、その素子搭載面に基板電極12aが、素子搭載面との反対面である端子形成面に、図示しないマザーボード(実装基板)と電気的に接続される外部接続端子12bが、それぞれ形成されている。 [0017] The package substrate 12, the substrate electrode 12a on the element mounting surface, the terminal forming surface which is the opposite surface of the element mounting surface, the external connection terminal to be electrically connected to a mother board (mounting board), not shown 12b are formed respectively. 【0018】そして、図1に示すように、弾性表面波素子11の素子電極とパッケージ基板12の基板電極12 [0018] Then, as shown in FIG. 1, the substrate electrode 12 of the device electrodes and the package substrate 12 of the SAW device 11
aとがボンディングワイヤ13により電気的に接続されている。 And a a are electrically connected by a bonding wire 13. なお、弾性表面波素子11とパッケージ基板とは突起電極を介してフリップチップ接続されていてもよい。 Note that the surface acoustic wave element 11 and the package substrate may be flip-chip connected through the protruding electrode. 【0019】ここで、圧電基板は、LiNbO3 、Li [0019] In this case, the piezoelectric substrate is, LiNbO3, Li
TaO3 や水晶などの圧電単結晶、あるいはチタン酸ジルコン酸鉛系圧電セラミックスのような圧電性セラミックスにより形成されている。 Piezoelectric single crystal such as TaO3, crystal, or is made of a piezoelectric ceramic such as lead zirconate titanate piezoelectric ceramics. 但し、絶縁基板上にZnO However, ZnO on an insulating substrate
薄膜などの圧電薄膜を形成したものを圧電基板として用いてもよい。 A material obtained by forming the piezoelectric thin film such as a thin film may be used as the piezoelectric substrate. 【0020】図2に示すように、パッケージ基板12の素子搭載面は、基板電極12a上の一部およびパッケージ基板12の下地部分の一部の領域がキャップ接着領域(封止部材接着領域)21となっており、このキャップ接着領域21に、たとえばSiO2 系のガラス材からなる被膜層23が環状に形成されている。 As shown in FIG. 2, the element mounting surface of the package substrate 12, a part of the region is cap-bonding area of ​​the part and the base portion of the package substrate 12 on the substrate electrode 12a (sealing member bonded area) 21 has become, in the cap-attaching area 21, the coating layer 23 is formed in an annular shape for example, a SiO2-based glass materials. そして、被膜層23上にたとえば樹脂製の接着材26が塗布されており、この接着材26を介してキャップ(封止部材)14 Then, adhesive 26 made on the coating layer 23, for example, a resin which is applied, the cap via the adhesive material 26 (sealing member) 14
がパッケージ基板12に接着されている。 There is bonded to the package substrate 12. キャップ14 Cap 14
は弾性表面波素子11を気密封止しており、当該弾性表面波素子11を塵埃や湿気といた外的環境や機械的衝撃などから保護している。 Is to protect the surface acoustic wave element 11 is hermetically sealed, the surface acoustic wave element 11, such as from external environment and mechanical shock had been dust and moisture. 【0021】ここで、本明細書において環状とは、途切れることなく全体がつながっていること、つまり無端状となっていることをいい、全体形状はどのようなものでもよく、また幅に広狭があってもよい。 [0021] Here, cyclic in the present specification, the entire are connected without interruption, i.e. good that it is an endless, overall shape may be of any type, also are wide or narrow in width it may be. 【0022】なお、被膜層23には、たとえば半田レジストとして用いられる部材などを適用することができる。 [0022] Incidentally, the coating layer 23 can be applied like member used for example as a solder resist. また、この被膜層23はキャップ接着領域21の全体に形成されていなくてもよく、部分的にキャップ接着領域21からはみ出して形成されていてもよい。 Further, the coating layer 23 may not be formed on the entire cap-bonding area 21, it may be formed to protrude from the partially capped bonding area 21. 【0023】接着材26には、エポキシ系樹脂またはシリコーン系樹脂を用いることができる。 [0023] the adhesive 26 may be an epoxy resin or a silicone resin. 本実施の形態の接着材26は液状のものであるが、半硬化させたもの、 Those adhesive 26 of the present embodiment are those in liquid form, which is semi-cured,
シート状に形成したものなどを用いてもよい。 Etc. may be used those formed into a sheet. なお、接着材は熱により硬化される。 The adhesive material is cured by heat. 但し、接着材26は樹脂製ではなくてもよい。 However, the adhesive 26 may not be made of resin. 【0024】そして、接着材26は被膜層23側に塗布しておいてキャップ14を接着するようにしてもよく、 [0024] Then, the adhesive 26 may be adhered to the cap 14 in advance by coating the coating layer 23 side,
逆にキャップ14側に塗布しておいて接着材26ごと被膜層23側に接着するようにしてもよい。 Conversely keep in applying the cap 14 side may be adhered to the coating layer 23 side by the adhesive 26. 【0025】さらに、キャップ14は、たとえばセラミック製や金属製のものを用いることができる。 Furthermore, the cap 14 can be used, for example, those made of ceramic or metal. より具体的には、セラミック、あるいはニッケル、スズ、金などのメッキが施されたセラミック、あるいは金属にて形成される。 More specifically, a ceramic, or nickel, tin, plating such as gold is formed by decorated ceramic or metal. 【0026】図3に示すように、基板電極12aは、ガラス材が混入されてその一部がガラス材からなる被膜層23と接合するたとえば銀や銅からなる基部層22と、 As shown in FIG. 3, the substrate electrode 12a includes a base portion layer 22, a part of glass material are mixed is made of, for example, silver or copper is bonded to the coating layer 23 made of a glass material,
基部層22上の被膜層23以外の領域に形成されたメッキ層24,25とから構成されている。 And a formed in the region other than the coating layer 23 on the base layer 22 plating layer 24 and 25. そして、このような基板電極12aは、信号線電極または接地電極として使用される。 Then, such a substrate electrode 12a is used as a signal line electrode or the ground electrode. なお、本実施の形態において、被膜層2 In this embodiment, the coating layer 2
3は基板電極12aの焼結と同時に印刷により形成される。 3 is formed by simultaneously printing and sintering of the substrate electrode 12a. また、メッキ層は、たとえばニッケルメッキ層24 The plating layer, for example nickel plating layer 24
および金メッキ層25が積層されたものからなる。 And consisting of those gold plating layer 25 are laminated. なお、メッキ層は、ニッケルメッキ層およびスズメッキ層などとすることもできる。 Incidentally, the plating layer may also be, eg nickel plating layer and a tin plating layer. 【0027】したがって、相互に接合した基板電極12 [0027] Thus, the substrate electrode 12 joined to each other
aおよび被膜層23には何れもガラス材が含まれているので、両者は相互に強固に接着される。 Since both the a and the coat layer 23 contains a glass material, so that both are firmly bonded to each other. また、このようなガラス材からなる被膜層23と接着材26もまた、相互に強固に接着される。 Further, the coating layer 23 and the adhesive material 26 made of such glass materials are also firmly bonded to each other. よって、接着材26で接着されたキャップ14は、被膜層23を介して基板電極12a Thus, the cap 14 which is adhered by the adhesive 26, the substrate electrode 12a through the coating layer 23
つまりパッケージ基板12に強い接着強度で接着されることになる。 That will be bonded with high bonding strength to the package substrate 12. 【0028】ここで、パッケージ基板12に対するキャップ14のせん断接着強度を図6に示す。 [0028] Here, a shear adhesive strength of the cap 14 to the package substrate 12 in Fig. なお、図6においては、セラミック製のキャップ14を用い、接着材26を介して当該キャップ14と被膜層23とを接着した場合の接着強度を、接着材を介してキャップと金メッキ層とを接着した場合(図7に示すもの)の接着強度と比較して示している。 In FIG. 6, using a ceramic cap 14, the adhesive bonding strength when adhered and the cap 14 and the coating layer 23 via an adhesive 26, through the bonding material of the cap and gold layer If it is shown compared to the adhesive strength of (one shown in FIG. 7). 【0029】図6に示すように、ガラス材の混入された基板電極12a上にガラス材からなる被膜層23を形成し、この被膜層23上に接着材26を用いてキャップ1 As shown in FIG. 6, a coating layer 23 made of a glass material onto entrained substrate electrode 12a of the glass material forming the cap 1 with an adhesive 26 on the coating layer 23
4を接着することにより、キャップ14の接着強度が大幅に向上する。 By bonding 4, bonding strength of the cap 14 is greatly improved. そして、このように接着強度が大幅に向上することから、キャップ14で封止された弾性表面波素子11への水分浸入が阻止されて、弾性表面波装置1 Then, since in this way the adhesive strength is significantly improved, moisture infiltration is prevented to the surface acoustic wave element 11 is sealed with the cap 14, the surface acoustic wave device 1
0の信頼性を確保することができる。 The reliability of the 0 can be ensured. 【0030】なお、本実施の形態においては、基部層2 [0030] In the present embodiment, the base layer 2
2にガラス材が混入されており、このガラス材の混入された基部層22上にガラス材からなる被膜層23が形成されているが、たとえば金メッキ層25にガラス材を混入し、金メッキ層25上に被膜層23を形成するようにしてもよい。 2 glass material are mixed, although the coating layer 23 made of a glass material is formed on the entrained base layer 22 of the glass material, for example a glass material mixed in the gold plating layer 25, the gold plating layer 25 it may be formed a coating layer 23 on top. すなわち、被膜層23は基板電極12aのうちのガラス材の混入された導体材上に形成されていればよい。 That is, the coating layer 23 may be formed on the mixed conductors material of glass material of the substrate electrode 12a. 【0031】また、前述した基板電極12aを構成する導体材の種類や基板電極12aの構成パターンは本実施の形態に限定されるものではない。 [0031] The configuration pattern of the type and the substrate electrode 12a of the conductive material constituting the substrate electrodes 12a described above is not limited to this embodiment. 【0032】このような弾性表面波装置10に実装された弾性表面波素子11の圧電基板上には、図4に示すように、所定周波数の弾性表面波に共振する励振電極部1 [0032] Such a surface acoustic wave device 10 is mounted on a piezoelectric substrate of a surface acoustic wave element 11, as shown in FIG. 4, the excitation electrode portion 1 which resonates in the surface acoustic wave of a predetermined frequency
5が形成されている。 5 is formed. この励振電極部15には、励振電極部15とパッケージ基板12とを電気的に接続し、励振電極部15に対する電気信号が入出力される素子電極である入力電極16、出力電極17および接地電極18 This excitation electrode portion 15, exciting the electrode portion 15 and the package substrate 12 and electrically connected, the input electrode 16 an electric signal is a device electrode that is input and output to excitation electrode 15, output electrode 17 and the ground electrode 18
が配線部19を介して電気的に接続されている。 There are electrically connected via the wiring portion 19. そして、配線部19は励振電極部15と電極16,17,1 The wiring portion 19 is excitation electrode 15 and the electrode 16,17,1
8、および励振電極部15相互間を電気的に接続する。 8, and electrically connects the excitation electrode portions 15 each other.
そして、励振電極部15および配線部19はアルミニウムまたはアルミニウム合金で形成されている。 The excitation electrode 15 and the wiring portion 19 is formed of aluminum or an aluminum alloy. 但し、アルミニウムまたはアルミニウム合金以外の部材が含まれていてもよい。 However, it may include members other than aluminum or an aluminum alloy. 【0033】ここで、励振電極部15は、図5に示すように、相互に入り組んだ一対の櫛の歯状に形成されている。 [0033] Here, the excitation electrodes 15, as shown in FIG. 5, are formed in a tooth shape of a pair of comb intricate mutually. そして、入力側の励振電極部15に電圧を印加して電界をかけると、圧電基板には圧電効果により弾性表面波が発生する。 When a voltage is applied to the input side of the excitation electrode 15 applying an electric field, the surface acoustic wave generated by the piezoelectric effect in the piezoelectric substrate. また、このようにして生成された弾性表面波による機械的歪みが電界を生じさせ、出力側の励振電極部15で電気信号に変換される。 Also, mechanical strain due to this manner the surface acoustic wave generated by the cause field, is converted into an electric signal by the excitation electrode 15 on the output side. 励振電極部15の両側には、弾性表面波を反射する反射器20が配置されている。 On both sides of the excitation electrodes 15, reflector 20 is disposed for reflecting the surface acoustic wave. 【0034】なお、本実施の形態は、入力電極16と出力電極17との間の配線部19を直列腕とし、この直列腕と接地電極18との間に複数の配線部19である並列腕を構成し、直列腕および並列腕に励振電極部15を配置したラダー型回路を構成しているが、ラダー型回路以外であってもよい。 [0034] Note that this embodiment, the parallel arm is a plurality of wiring portions 19 between the wiring portion 19 and the series arm, and the series arm and the ground electrode 18 between the input electrode 16 and output electrode 17 configure, but constitute a ladder circuit placing the excitation electrode 15 on the series arm and the parallel arm, may be other than the ladder type circuit. 【0035】以上説明したように、本実施の形態の弾性表面波装置によれば、ガラス材の混入された基板電極1 [0035] As described above, according to the surface acoustic wave device of this embodiment, the substrate electrode 1 is mixed in a glass material
2a上にガラス材からなる被膜層23を形成して両者を強固に接着し、当該被膜層23上に位置する接着材26 Adhesive 26 to form a coating layer 23 made of a glass material is strongly adhered to each other on 2a, located on the coating layer 23
を介してキャップ14をパッケージ基板12に接着しているので、キャップ14のパッケージ基板12に対する接着強度を大幅に向上させることが可能になる。 Since the bonding the cap 14 to the package substrate 12 through, it is possible to greatly improve the adhesive strength to the package substrate 12 of the cap 14. 【0036】なお、以上の説明では、弾性表面波素子1 [0036] In the above description, the surface acoustic wave device 1
1が一個搭載された弾性表面波装置10が示されているが、たとえば相互に異なる帯域中心周波数を有する2つの弾性表面波素子を搭載して分波器とするなど、本発明の弾性表面波素子は種々の形態の弾性表面波装置に適用することが可能である。 1 although one mounted on surface acoustic wave device 10 is shown, for example, and equipped with two surface acoustic wave element having a band center frequencies different from each other demultiplexer, the surface acoustic wave of the present invention element can be applied to the surface acoustic wave device of various forms. 【0037】また、本発明は、このような弾性表面波装置に限定されるものではなく、圧電基板やシリコン基板などの素子基板上に所定の回路パターンが形成された集積回路素子がパッケージ基板上に搭載された種々の集積回路装置に適用することができる。 Further, the present invention is not limited to such a surface acoustic wave device, a predetermined circuit pattern on a device substrate such as a piezoelectric substrate, a silicon substrate is formed integrated circuit elements on the package substrate it can be applied to various integrated circuit devices mounted on. 【0038】 【発明の効果】以上の説明から明らかなように、本発明によれば以下の効果を奏することができる。 As is apparent from the above description, it is possible to achieve the following effects according to the present invention. (1).ガラス材の混入された基板電極上にガラス材からなる被膜層を形成して両者を強固に接着し、当該被膜層上に位置する接着材を介して封止部材をパッケージ基板に接着しているので、封止部材のパッケージ基板に対する接着強度を大幅に向上させることが可能になる。 (1). On entrained substrate electrodes of the glass material to form a coating layer made of a glass material is strongly adhered to each other, the sealing member to the package substrate through the adhesive material positioned on the coating layer since the adhesive, it is possible to greatly improve the adhesive strength to the package substrate of the sealing member. (2).このように、封止部材のパッケージ基板に対する接着強度を大幅に向上させることが可能になることから、 (2). Thus, since it becomes possible to greatly improve the adhesive strength to the package substrate of the sealing member,
封止部材で封止された集積回路素子への水分浸入が阻止されて、集積回路装置の信頼性を確保することができる。 Infiltration of water into the sealed integrated circuit element with a sealing member is blocked, it is possible to ensure the reliability of the integrated circuit device.

【図面の簡単な説明】 【図1】本発明の一実施の形態である弾性表面波素子がパッケージ化された弾性表面波装置を示す断面図である。 The surface acoustic wave device according to an embodiment of the BRIEF DESCRIPTION OF THE DRAWINGS [Figure 1] The present invention is a cross-sectional view showing a surface acoustic wave device which is packaged. 【図2】図1の弾性表面波装置のパッケージ基板を弾性表面波素子とともに示す平面図である。 Of FIG. 1. FIG package substrate of the surface acoustic wave device is a plan view showing with surface acoustic wave element. 【図3】図1の弾性表面波装置の要部を示す断面図である。 3 is a cross-sectional view showing a main portion of a surface acoustic wave device of FIG. 【図4】図1の弾性表面波素子の回路を示す概略図である。 4 is a schematic diagram showing a circuit of a surface acoustic wave device of FIG. 【図5】図1の弾性表面波素子に形成された回路の一部を示す平面図である。 5 is a plan view showing a part of a circuit formed on the surface acoustic wave device of FIG. 【図6】パッケージ基板に対するキャップのせん断接着強度を示すグラフである。 6 is a graph showing the shear bond strength of the cap to the package substrate. 【図7】従来の弾性表面波装置の要部を示す断面図である。 7 is a sectional view showing a main portion of a conventional surface acoustic wave device. 【符号の説明】 10 弾性表面波装置(集積回路装置) 11 弾性表面波素子(集積回路素子) 12 パッケージ基板12a 基板電極12b 外部接続端子13 ボンディングワイヤ14 キャップ(封止部材) 15 励振電極部16 入力電極17 出力電極18 接地電極19 配線部20 反射器21 キャップ接着領域(封止部材接着領域) 22 基部層23 被膜層24 ニッケルメッキ層(メッキ層) 25 金メッキ層(メッキ層) 26 接着材112 パッケージ基板112a 基板電極113 ボンディングワイヤ114 キャップ(封止部材) 122 基部層124 ニッケルメッキ層(メッキ層) 125 金メッキ層(メッキ層) 126 接着材 [Reference Numerals] 10 surface acoustic wave device (integrated circuit device) 11 surface acoustic wave device (integrated circuit device) 12 package substrate 12a substrate electrode 12b external connection terminals 13 bonding wire 14 cap (sealing member) 15 excitation electrode portion 16 input electrode 17 the output electrode 18 ground electrode 19 wiring portion 20 reflector 21 cap-attaching area (sealing member bonded area) 22 base layer 23 coating layer 24 nickel plating layer (plating layer) 25 gold plating layer (plating layer) 26 adhesive 112 package substrate 112a substrate electrode 113 bonding wires 114 cap (sealing member) 122 base layer 124 nickel plated layer (plated layer) 125 gold-plated layer (plated layer) 126 adhesive

Claims (1)

  1. 【特許請求の範囲】 【請求項1】 素子基板上に所定の導電パターンおよび素子電極が形成された集積回路素子と、 ガラス材の混入された導体材からなる基板電極が形成されるとともに前記基板電極上の一部を含む封止部材接着領域にガラス材からなる被膜層が環状に形成され、前記基板電極が前記素子電極と電気的に接続されて前記集積回路素子が搭載されたパッケージ基板と、 前記被膜層上に位置する接着材を介して前記パッケージ基板に接着され、前記集積回路素子を気密封止する封止部材とを有することを特徴とする集積回路装置。 The substrate and the Patent Claims 1. A device integrated circuit device in which a predetermined conductive pattern and the element electrodes are formed on a substrate, together with the substrate electrode made of mixed conductors material of the glass material is formed coating layer comprising a glass material is formed into an annular sealing member bonding region including a part of the electrode, a package substrate on which the integrated circuit element is mounted the substrate electrode is connected to the element electrodes and electrically and via said adhesive material positioned on the coating layer is bonded to the package substrate, an integrated circuit device, characterized in that it comprises a sealing member for hermetically sealing the integrated circuit element. 【請求項2】 前記接着材は樹脂製であることを特徴とする請求項1記載の集積回路装置。 Wherein said adhesive material is an integrated circuit device according to claim 1, characterized in that the resin. 【請求項3】 前記パッケージ基板はセラミック製であることを特徴とする請求項1または2記載の集積回路装置。 Wherein the package substrate integrated circuit device according to claim 1 or 2, wherein it is made of ceramic. 【請求項4】 前記パッケージ基板はLTCCであることを特徴とする請求項1または2記載の集積回路装置。 Wherein said package substrate integrated circuit device according to claim 1, wherein that the LTCC. 【請求項5】 前記基板電極は、ガラス材が混入されて前記被膜層と一部が接合する基部層と、当該基部層上の前記被膜層以外の領域に形成されたメッキ層とを備えたことを特徴とする請求項1〜4の何れか一項に記載の集積回路装置。 Wherein said substrate electrode, comprising a base layer of glass material is bonded part and the coating layer are mixed, and are formed in regions other than the coating layer on the base layer plating layer integrated circuit device according to any one of claims 1-4, characterized in that. 【請求項6】 前記集積回路素子は所定の帯域中心周波数を有する弾性表面波素子であり、前記集積回路装置はこの弾性表面波素子が搭載された弾性表面波装置であることを特徴とする請求項1〜5の何れか一項に記載の集積回路装置。 Wherein said integrated circuit device is a surface acoustic wave device having a predetermined bandwidth center frequency, wherein the integrated circuit device according to, wherein the surface acoustic wave device is a surface acoustic wave device mounted integrated circuit device according to any one of claim 1 to 5. 【請求項7】 前記パッケージ基板には、相互に異なる帯域中心周波数を有する2つの前記弾性表面波素子が搭載されていることを特徴とする請求項6記載の集積回路装置。 7. the package substrate, an integrated circuit device that according to claim 6, characterized in that two of said surface acoustic wave element having a band center frequencies different from each other are mounted.
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US10813393 US7015556B2 (en) 2001-11-16 2004-03-31 Packaging substrate and manufacturing method thereof, integrated circuit device and manufacturing method thereof, and saw device
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067300A (en) * 2005-09-01 2007-03-15 Asahi Glass Co Ltd Light emitting device and method of manufacturing same
JP2007520949A (en) * 2004-02-02 2007-07-26 エプコス アクチエンゲゼルシャフトEpcos Ag Methods for components and their preparation have a sensitive component structure
KR101270062B1 (en) * 2004-02-02 2013-05-31 에프코스 아게 Element, and a method of manufacture comprising a sensitive structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007520949A (en) * 2004-02-02 2007-07-26 エプコス アクチエンゲゼルシャフトEpcos Ag Methods for components and their preparation have a sensitive component structure
US7998805B2 (en) 2004-02-02 2011-08-16 Epcos Ag Component with sensitive component structures and method for the production thereof
JP4814108B2 (en) * 2004-02-02 2011-11-16 エプコス アクチエンゲゼルシャフトEpcos Ag Methods for components and their preparation have a sensitive component structure
KR101270062B1 (en) * 2004-02-02 2013-05-31 에프코스 아게 Element, and a method of manufacture comprising a sensitive structure
JP2007067300A (en) * 2005-09-01 2007-03-15 Asahi Glass Co Ltd Light emitting device and method of manufacturing same

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