JPS62141699A - 半導体メモリ装置の検査方法 - Google Patents

半導体メモリ装置の検査方法

Info

Publication number
JPS62141699A
JPS62141699A JP60283321A JP28332185A JPS62141699A JP S62141699 A JPS62141699 A JP S62141699A JP 60283321 A JP60283321 A JP 60283321A JP 28332185 A JP28332185 A JP 28332185A JP S62141699 A JPS62141699 A JP S62141699A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory device
data
current
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60283321A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0427640B2 (https=
Inventor
Shiroji Shoren
城二 勝連
Seiji Yamaguchi
山口　聖司
Kazuhiko Tsuji
和彦 辻
Eisuke Ichinohe
一戸　英輔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60283321A priority Critical patent/JPS62141699A/ja
Priority to US06/941,626 priority patent/US4820974A/en
Publication of JPS62141699A publication Critical patent/JPS62141699A/ja
Publication of JPH0427640B2 publication Critical patent/JPH0427640B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
JP60283321A 1985-12-16 1985-12-16 半導体メモリ装置の検査方法 Granted JPS62141699A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60283321A JPS62141699A (ja) 1985-12-16 1985-12-16 半導体メモリ装置の検査方法
US06/941,626 US4820974A (en) 1985-12-16 1986-12-11 Method for measuring a characteristic of semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60283321A JPS62141699A (ja) 1985-12-16 1985-12-16 半導体メモリ装置の検査方法

Publications (2)

Publication Number Publication Date
JPS62141699A true JPS62141699A (ja) 1987-06-25
JPH0427640B2 JPH0427640B2 (https=) 1992-05-12

Family

ID=17663950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60283321A Granted JPS62141699A (ja) 1985-12-16 1985-12-16 半導体メモリ装置の検査方法

Country Status (2)

Country Link
US (1) US4820974A (https=)
JP (1) JPS62141699A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985672A (en) * 1989-12-11 1991-01-15 Advantest Corporation Test equipment for a low current IC
US5321354A (en) * 1990-07-23 1994-06-14 Seiko Epson Corporation Method for inspecting semiconductor devices
US5097206A (en) * 1990-10-05 1992-03-17 Hewlett-Packard Company Built-in test circuit for static CMOS circuits
US5289475A (en) * 1990-11-29 1994-02-22 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with inverted write-back capability and method of testing a memory using inverted write-back
US5132615A (en) * 1990-12-19 1992-07-21 Honeywell Bull Inc. Detecting presence of N+ diffusion faults in a micropackage containing a plurality of integrated circuits by analyzing Vref current
US5325054A (en) * 1992-07-07 1994-06-28 Texas Instruments Incorporated Method and system for screening reliability of semiconductor circuits
US5483170A (en) * 1993-08-24 1996-01-09 New Mexico State University Technology Transfer Corp. Integrated circuit fault testing implementing voltage supply rail pulsing and corresponding instantaneous current response analysis
US5731700A (en) * 1994-03-14 1998-03-24 Lsi Logic Corporation Quiescent power supply current test method and apparatus for integrated circuits
US5687382A (en) * 1995-06-07 1997-11-11 Hitachi America, Ltd. High speed, reduced power memory system implemented according to access frequency
US6175244B1 (en) 1997-04-25 2001-01-16 Carnegie Mellon University Current signatures for IDDQ testing

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576982A (en) * 1968-12-16 1971-05-04 Ibm Error tolerant read-only storage system
US4045779A (en) * 1976-03-15 1977-08-30 Xerox Corporation Self-correcting memory circuit
US4271519A (en) * 1979-07-26 1981-06-02 Storage Technology Corporation Address mark generation and decoding method
JPS5853775A (ja) * 1981-09-26 1983-03-30 Fujitsu Ltd Ｉｃメモリ試験方法
US4637020A (en) * 1983-08-01 1987-01-13 Fairchild Semiconductor Corporation Method and apparatus for monitoring automated testing of electronic circuits
US4686456A (en) * 1985-06-18 1987-08-11 Kabushiki Kaisha Toshiba Memory test circuit

Also Published As

Publication number Publication date
US4820974A (en) 1989-04-11
JPH0427640B2 (https=) 1992-05-12

Similar Documents

Publication Publication Date Title
KR940020563A (ko) 반도체 기억장치 및 그 품종설정 방법
NO20003507D0 (no) FremgangsmÕte til dynamisk lesing/skriving i et ferroelektrisk minne samt kretsløsninger for utførelse av fremgangsmÕten
JPS62141699A (ja) 半導体メモリ装置の検査方法
CN114333972A (zh) 自刷新周期测试方法及装置
JP2898016B2 (ja) メモリ装置
KR930003170A (ko) 메모리회로의 테스트 방법 및 반도체집적회로장치
JP2568507B2 (ja) 半導体メモリ装置の検査方法
DE69505806D1 (de) Verfahren und vorrichtung zur prüfung eines speichers mit einer parallelen block-schreib-operation
JPH0269958A (ja) 半導体ウエーハ用ホルダ
JPH0269686A (ja) 半導体記憶装置の試験方法
JPH0434233B2 (https=)
US11977116B2 (en) Current test circuit, device and method, and storage medium
JPH06215562A (ja) 半導体記憶装置
JPH026278U (https=)
JPH04322441A (ja) 半導体集積回路装置、その検査方法及びそれに使用する検査装置
JPS5896260A (ja) Ｉｃメモリ試験方式
JPS60131882U (ja) プロ−ブ
JPS5891176U (ja) 半導体素子の特性測定装置
US7437629B2 (en) Method for checking the refresh function of an information memory
JPH04142614A (ja) 電子計算機
JPS63152087A (ja) 半導体記憶装置
JPH0729387A (ja) 半導体装置
JPS58171844A (ja) 半導体メモリ試験方法
JPS59176976U (ja) Ｉｃ試験装置
JPS56157875A (en) Testing jig for semiconductor

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees