JPS62136089A - Semiconductor laser device - Google Patents

Abstract

PURPOSE:To take out a laser beam output to the upward direction nearly vertical to the main surface of a substrate by a method wherein one end surface is inclined so as to make its surface face the surface of a substrate while omitting a cup layer and an ohmic electrode near an end surface. CONSTITUTION:An N-type AlyGa1-yAs cladding layer 2, an AlxGa1-xAs active layer 3, a P-type AlyGa1-yAs cladding layer 4 and a P-type GaAs cap layer 5 are successively laminated on an N<+> type GaAs substrate and ohmic electrodes 6 and 7 are provided. The semiconductor laser is forward-biased and an oscillation is induced. At that time, although a gain is not obtained near the end surface of the side where the cap layer 5 and the ohmic electrode 6 are removed, the boundary plane between the cladding layer 4 and the air serves as mirror of the laser resonator and a light is deflected to a vertical upward direction by the surface inclined about 45 deg. to the substrate surface. With this constitution, the laser beam output can be emitted to the upward direction vertical to the main surface of the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor laser device used for various information transmission and information processing.

Conventional technology Conventionally, in an 0EIC that monolithically integrates a semiconductor laser and an electronic circuit to drive it, the semiconductor laser is
In order to extract the entire laser beam to the outside, it must be located close to the edge of the substrate.

Hereinafter, the conventional semiconductor laser device as described above will be explained with reference to all the drawings.

FIG. 2a, bu shows a semiconductor laser used in a conventional EIC. In Figure 2 a and b,
9 fi GaAs substrate, 10 fi GaAs/AnGaA
s semiconductor laser, 11 is an electronic circuit that operates the semiconductor laser, and 8 is an emitted laser beam.

In the EIC shown in FIG. 2a, the cavity of the semiconductor laser is formed by cleavage. In the figure, the cavity of the semiconductor laser is formed by etching one end face and by cleaving the other end face. In such an 0EIC, laser light is extracted from the edge of the substrate.

Problems to be Solved by the Invention However, in the above configuration, since the laser beam is emitted in the horizontal direction, at least one end surface of the semiconductor laser is located at the edge of the substrate in order to extract the laser beam to the outside. This has the disadvantage that ○EICi design must be carried out, which greatly limits the degree of freedom in design.

In view of the above drawbacks, the present invention provides a semiconductor laser device that can be placed even in the center of an 0EIC substrate.

problem? Means for Solving In order to solve the above-mentioned problems, the semiconductor laser device of the present invention has one end surface inclined with respect to the substrate so that the surface of this end surface faces the surface of the substrate, and furthermore, the semiconductor laser device of the present invention has The cap layer and the ohmic electrode above it are missing.

Effect: With this configuration, the laser light generated inside the semiconductor laser is bent at right angles by the inclined end face, forming an L-shaped resonator. As a result, the laser light output is emitted at a predetermined angle with respect to the main surface of the substrate.

EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.

FIG. 1 shows a cross section of a semiconductor laser device according to a first embodiment of the present invention. It shows.

In Figure 1, 1 is an n''-GaAs substrate, 2 is an n-GaAs substrate, and 2 is an n-GaAs substrate.
AnyGal-, As cladding layer, 3 is An
a1-, As active layer 1x<y), 4 p-AJ2AGa1-AAS cladding layer, 5 fi p-GaA
s cap layer, 6 and 7 are ohmic electrodes, and 8 is an emitted laser beam.

The operation of the semiconductor laser device configured as described above will be explained below.

First, the semiconductor laser is biased toward the head, causing it to oscillate. At this time, the interface between the cap layer, the ohmic layer 4, and the air acts as a mirror of the laser resonator. As a result, the laser light output is emitted perpendicularly above the main surface of the substrate.

In this example, GaAs/Aj2GaAs material is used as an example, but InP/I nGaAs
It may be made of P-based material or the like.

Furthermore, in this embodiment, an n-type substrate was used as an example, but p-type,
Alternatively, a 31 board may be used.

Also, the slope? Au etc. on the attached end face? Coating and reflectance? It is also possible to raise it.

Effects of the Invention As described above, the present invention provides one end surface of a double heterostructure semiconductor laser with an m inclination with respect to the main surface of the substrate, and further removes the cap layer near this end surface and the electrode on the upper surface of the substrate. The entire laser beam output can be emitted almost perpendicularly above the main surface, and its practical effects are impressive.

[Brief explanation of drawings]

FIG. 1 shows a cross section of a semiconductor laser device according to an embodiment of the present invention.
・-n-GaAs substrate, 2 ・-...-n -Aj2y
Ga, -yA layer, 3...AxxGal-,
As active layer, 4...p-MPl-yA layer, 6.
... p-GaAs layer, 6.7 ... ohmic electrode, 8 ... output laser beam, 9 ... G
aA s substrate, 1°... Semiconductor laser, 11.
...Electronic circuit. Name of agent: Patent attorney Toshio Nakao 1 person! −
--da-GαAsGa As substrate n-Aly Ga1->ArXl3---
Ait Ga1-y-As? 8a314---P-
AjLyGαt-V As layer 5 --- P-GaAs layer 1st Figure 6 --- Ohmic Denji 7 --- Ohmic diameter 8 --- Investment Lep light

Claims (1)

[Claims] The one end surface is inclined with respect to the substrate so that the surface of the one end surface is directed toward the surface of the substrate, and the cap layer near the one end surface and the ohmic electrode above the cap layer are omitted. Semiconductor laser equipment.