JPS6473689A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6473689A
JPS6473689A JP23038987A JP23038987A JPS6473689A JP S6473689 A JPS6473689 A JP S6473689A JP 23038987 A JP23038987 A JP 23038987A JP 23038987 A JP23038987 A JP 23038987A JP S6473689 A JPS6473689 A JP S6473689A
Authority
JP
Japan
Prior art keywords
layer
active layer
region
gaas
planar shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23038987A
Other languages
Japanese (ja)
Inventor
Toshio Hata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP23038987A priority Critical patent/JPS6473689A/en
Publication of JPS6473689A publication Critical patent/JPS6473689A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To radiate a laser beam having a small angle of deflection by a method wherein an active layer composed of an oscillation layer, a connection region and a window region is formed to be continuously smooth from a recessed and curved shape to a planar shape. CONSTITUTION:An N-GaAs current-blocking layer 11, a P-GaAlAs clad layer 12, a GaAs or GaAlAs active layer 13, an N-GaAlAs clad layer 14 and an N-GaAs cap layer 15 are laminated in succession on a substrate 10. The active layer 13 is formed by reflecting a stripe shape of the current-blocking layer 11. That is to say, the active layer 13 is bent toward the lower-layer side in the center of a groove part in an oscillation region 18; its layer thickness is thick; the layer is formed to be a planar shape and its layer thickness is formed to be thin in a window region 17. In a connection region 19, the active layer 13 is formed to be continuous gradually from a curved shape to the planar shape and its film thickness is formed to be gradually thin.
JP23038987A 1987-09-14 1987-09-14 Semiconductor laser device Pending JPS6473689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23038987A JPS6473689A (en) 1987-09-14 1987-09-14 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23038987A JPS6473689A (en) 1987-09-14 1987-09-14 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6473689A true JPS6473689A (en) 1989-03-17

Family

ID=16907111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23038987A Pending JPS6473689A (en) 1987-09-14 1987-09-14 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6473689A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5987046A (en) * 1993-08-31 1999-11-16 Fujitsu Limited Optical semiconductor device and a method of manufacturing the same
JP2003101139A (en) * 2001-09-21 2003-04-04 Nec Corp End surface emitting semiconductor laser and semiconductor laser module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5987046A (en) * 1993-08-31 1999-11-16 Fujitsu Limited Optical semiconductor device and a method of manufacturing the same
US6238943B1 (en) 1993-08-31 2001-05-29 Fujitsu Limited Optical semiconductor device and a method of manufacturing the same
JP2003101139A (en) * 2001-09-21 2003-04-04 Nec Corp End surface emitting semiconductor laser and semiconductor laser module

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