JPS6473689A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS6473689A JPS6473689A JP23038987A JP23038987A JPS6473689A JP S6473689 A JPS6473689 A JP S6473689A JP 23038987 A JP23038987 A JP 23038987A JP 23038987 A JP23038987 A JP 23038987A JP S6473689 A JPS6473689 A JP S6473689A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- region
- gaas
- planar shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To radiate a laser beam having a small angle of deflection by a method wherein an active layer composed of an oscillation layer, a connection region and a window region is formed to be continuously smooth from a recessed and curved shape to a planar shape. CONSTITUTION:An N-GaAs current-blocking layer 11, a P-GaAlAs clad layer 12, a GaAs or GaAlAs active layer 13, an N-GaAlAs clad layer 14 and an N-GaAs cap layer 15 are laminated in succession on a substrate 10. The active layer 13 is formed by reflecting a stripe shape of the current-blocking layer 11. That is to say, the active layer 13 is bent toward the lower-layer side in the center of a groove part in an oscillation region 18; its layer thickness is thick; the layer is formed to be a planar shape and its layer thickness is formed to be thin in a window region 17. In a connection region 19, the active layer 13 is formed to be continuous gradually from a curved shape to the planar shape and its film thickness is formed to be gradually thin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23038987A JPS6473689A (en) | 1987-09-14 | 1987-09-14 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23038987A JPS6473689A (en) | 1987-09-14 | 1987-09-14 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6473689A true JPS6473689A (en) | 1989-03-17 |
Family
ID=16907111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23038987A Pending JPS6473689A (en) | 1987-09-14 | 1987-09-14 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6473689A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5987046A (en) * | 1993-08-31 | 1999-11-16 | Fujitsu Limited | Optical semiconductor device and a method of manufacturing the same |
JP2003101139A (en) * | 2001-09-21 | 2003-04-04 | Nec Corp | End surface emitting semiconductor laser and semiconductor laser module |
-
1987
- 1987-09-14 JP JP23038987A patent/JPS6473689A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5987046A (en) * | 1993-08-31 | 1999-11-16 | Fujitsu Limited | Optical semiconductor device and a method of manufacturing the same |
US6238943B1 (en) | 1993-08-31 | 2001-05-29 | Fujitsu Limited | Optical semiconductor device and a method of manufacturing the same |
JP2003101139A (en) * | 2001-09-21 | 2003-04-04 | Nec Corp | End surface emitting semiconductor laser and semiconductor laser module |
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