JPS62136037A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To readily detect an improper connection of a semiconductor device by detecting a bonding position from the center of heat transfer between a supporting substrate and a chip from a temperature distribution image after a bonding step to detect a terminal of improper connection. CONSTITUTION:An optical head of a thermography is opposed above a chip 1 which has been bonded to a supporting substrate 3, the surface of the substrate 3 is heated to obtain a temperatured distribution image on a display plate 7. Concentrically circular images 8 which exhibit a temperature rise are obtained by the heat transfer from the substrate 3 in the bonded electrode. Thus, the improper connection of a bump electrode 2 and a solder electrode 6 can be readily detected from the malfunction of the temperature distribution shown by an arrow B.

Description

[Detailed description of the invention] [Technical field to which the invention pertains]

The present invention relates to a method for manufacturing a semiconductor W'S in which a terminal portion on a semiconductor chip is bonded to a terminal portion on a support substrate.

[Prior art and its problems]

As a method of connecting a semiconductor chip of an integrated circuit to a wiring conductor on a support substrate, a bump electrode 2 is provided on a semiconductor chip 1 as shown in FIG. A flip-chip method is known in which a wiring conductor 4 formed on the surface of an insulating film 3 is bonded to an opening in an insulating film 5. The bump electrode 2 is formed of, for example, solder, aligned with the solder electrode 6 on the wiring conductor 4, and heated to fuse the bump electrode 2 and the solder electrode 6. However, in this case, for some reason, a disconnection may occur where the bump electrode 2 and the solder electrode 6 are not fused together, as shown by A in FIG. In recent high-density packaging, the pitch d of bump electrodes is about 450 μm for solder bumps and about 110 μm for gold bumps, so it is difficult to visually detect such disconnections, especially as shown in Figure 2. In the case where the bump electrodes 2 are distributed over the entire surface of the chip 1, it is impossible to detect a connection failure in the central electrode.

[Purpose of the invention]

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for solving the above-mentioned problems, eliminating connection failures between a terminal section on a semiconductor chip and a terminal section on a support substrate, and manufacturing a semiconductor device without disconnection. .

[Key points of the invention]

According to the present invention, after the bonding process, heating is performed from the surface of the support substrate opposite to the chip, a temperature distribution image is obtained on the surface of the chip opposite to the support substrate, and from the temperature distribution image, the temperature distribution between the support substrate and the chip is determined. The bonding position is detected from the heat transfer center of
By detecting a terminal portion with a poor connection, a poor connection can be easily detected even in the case of high-density packaging, so that the above object can be achieved.

[Embodiments of the invention]

In the embodiment of the present invention, a thermography device, manufactured by JEOL Ltd., trade name Thermopure, is used, which converts infrared radiation on the chip surface into an electrical signal using an infrared detector, and displays the temperature distribution of a semiconductor chip as a temperature distribution image. . An optical head of a thermography apparatus is placed above the chip 1 which has been bonded to the supporting substrate 3, and the lower surface of the substrate 3 is heated to obtain a temperature distribution image on the display plate 7 as shown in FIG. The temperature distribution image shows the surface temperature distribution of the chip 1 with uniform height, and a concentric image 8 showing a temperature rise due to heat transfer from the substrate 3 is obtained at the bonded electrode part, as shown by arrow B, for example. It is easy to detect a poor connection between the bump '@, i2 and the solder electrode 6 from the abnormal temperature distribution portion.

【Effect of the invention】

The present invention measures the heat transfer from the support substrate based on the temperature distribution on the chip surface after bonding the terminal part of the semiconductor chip and the terminal part on the support substrate, and detects the unsoundness of the bond by detecting no heat transfer. Since it can be easily detected even when the terminals are closely arranged or arranged in the center of the chip, it is extremely effective in improving the reliability of high-density packaging of semiconductor integrated circuits.

[Brief explanation of drawings]

FIG. 1 is a perspective view of a temperature distribution display board used in an embodiment of the present invention, FIG. 2 is a plan view of a chip of an example of a semiconductor integrated circuit manufactured according to the present invention, and FIG. 3 is a diagram showing a chip bonded to a support substrate. FIG. 3 is a cross-sectional view of the chip of FIG. 2; 1: Semiconductor chip, 2: Bump electrode, 3-, Support substrate,
4: Wiring conductor, 6: Solder electrode, 7: Temperature difference Figure 2 Figure 3

Claims (1)

[Claims] 1) When bonding a terminal portion on a semiconductor chip to a terminal portion on a support substrate, heat is applied from the side of the support substrate opposite to the chip after the bonding process, and the side of the support substrate opposite to the support substrate of the chip is heated. A method for manufacturing a semiconductor device, comprising: obtaining a temperature distribution image on the surface of the substrate, detecting a bonding position based on the center of heat transfer between the support substrate and the chip from the temperature distribution image, and detecting a terminal portion having a connection failure. . 2) A method for manufacturing a semiconductor device according to claim 1, characterized in that the temperature distribution image is obtained by a thermography device.