JPS621358B2 - - Google Patents
Info
- Publication number
- JPS621358B2 JPS621358B2 JP10868580A JP10868580A JPS621358B2 JP S621358 B2 JPS621358 B2 JP S621358B2 JP 10868580 A JP10868580 A JP 10868580A JP 10868580 A JP10868580 A JP 10868580A JP S621358 B2 JPS621358 B2 JP S621358B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- melt
- substrate
- atmosphere
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 16
- 239000007791 liquid phase Substances 0.000 claims description 14
- 238000000926 separation method Methods 0.000 claims description 13
- 230000005484 gravity Effects 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 30
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021397 glassy carbon Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10868580A JPS5734099A (en) | 1980-08-06 | 1980-08-06 | Epitaxial growth of liquid phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10868580A JPS5734099A (en) | 1980-08-06 | 1980-08-06 | Epitaxial growth of liquid phase |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5734099A JPS5734099A (en) | 1982-02-24 |
| JPS621358B2 true JPS621358B2 (ko) | 1987-01-13 |
Family
ID=14491056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10868580A Granted JPS5734099A (en) | 1980-08-06 | 1980-08-06 | Epitaxial growth of liquid phase |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5734099A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6283399A (ja) * | 1985-10-04 | 1987-04-16 | Mitsubishi Electric Corp | 液相エピタキシヤル成長用ボ−ト |
| JP3258163B2 (ja) * | 1994-02-23 | 2002-02-18 | 富士電機株式会社 | 電子写真感光体 |
-
1980
- 1980-08-06 JP JP10868580A patent/JPS5734099A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5734099A (en) | 1982-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3093517A (en) | Intermetallic semiconductor body formation | |
| US6872248B2 (en) | Liquid-phase growth process and liquid-phase growth apparatus | |
| US3484302A (en) | Method of growing semiconductor crystals | |
| EP0244987B1 (en) | A process for growing a multi-component crystal | |
| US4642142A (en) | Process for making mercury cadmium telluride | |
| Seidensticker | Kinetic effects in temperature gradient zone melting | |
| US4512825A (en) | Recovery of fragile layers produced on substrates by chemical vapor deposition | |
| US3762968A (en) | Method of forming region of a desired conductivity type in the surface of a semiconductor body | |
| US4654110A (en) | Total immersion crystal growth | |
| JPS621358B2 (ko) | ||
| US3697330A (en) | Liquid epitaxy method and apparatus | |
| US4824520A (en) | Liquid encapsulated crystal growth | |
| US3530011A (en) | Process for epitaxially growing germanium on gallium arsenide | |
| US4201623A (en) | Method for making epitaxial silicon crystals with uniform doping levels | |
| US5223079A (en) | Forming thin liquid phase epitaxial layers | |
| JP2001180918A (ja) | リン化インジウムの直接合成法 | |
| JP2008300603A (ja) | 半導体製造装置 | |
| JP2599767B2 (ja) | 溶液成長装置 | |
| JPH085760B2 (ja) | Ｈｇｌ―ｘｏ Ｃｄｘｏ Ｔｅ結晶インゴットの製造方法 | |
| JP2580143B2 (ja) | ヘテロエピタキシャル構造を有する物品の製造方法 | |
| JPS59101823A (ja) | 液相エピタキシヤル成長装置 | |
| JPS5869800A (ja) | ３−５族化合物半導体の結晶成長方法 | |
| Haggerty et al. | Development of techniques for the growth of bulk single crystals of several 3-5 compound semiconductors | |
| Peterson et al. | Some aspects of alloying onto germanium surfaces | |
| JPS63108730A (ja) | ３−５族化合物半導体のアニ−ル法 |