JPS62131264A - Apparatus for treating silane coupling agent - Google Patents
Apparatus for treating silane coupling agentInfo
- Publication number
- JPS62131264A JPS62131264A JP27286185A JP27286185A JPS62131264A JP S62131264 A JPS62131264 A JP S62131264A JP 27286185 A JP27286185 A JP 27286185A JP 27286185 A JP27286185 A JP 27286185A JP S62131264 A JPS62131264 A JP S62131264A
- Authority
- JP
- Japan
- Prior art keywords
- coupling agent
- silane coupling
- reducing
- substrate
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はシランカップリング剤処理装置、特に。[Detailed description of the invention] [Industrial application field] The present invention relates to a silane coupling agent processing device, particularly.
安定なシランカップリング剤処理を可能とするシ細化が
進み、そのためフォトレジストと基板との密着力即ち接
着力を強化する必要が生じている。The trend toward finer resists that enables stable silane coupling agent treatment has led to the need to strengthen the adhesion between the photoresist and the substrate.
特にノボラック系のポジ型フォトレジス14高い解像度
を有することにより広く用いられているが、基板の表面
がガラスあるいは二酸化けい素などの酸化物の場合には
、フォトレジストと基板表面のの接着力強化のために、
前処理としてシランカップリング剤をガラス等の表面に
コーティングすることが知られている。例えば米国特許
3,549.368(R,H,Co11ins an
d F、T、Deverse”Processfor
Improving Photoresist
Adhesion’ )に示されているようにフォト
レジストの塗布前にへ中サメチルジシラザンなどのへキ
サアルキルジシラザンをスピンコードする前処理を行う
ことが知られている。In particular, novolac-based positive photoresists14 are widely used due to their high resolution, but when the substrate surface is glass or an oxide such as silicon dioxide, the adhesion between the photoresist and the substrate surface is strengthened. for,
It is known to coat the surface of glass or the like with a silane coupling agent as a pretreatment. For example, U.S. Patent 3,549.368 (R.H.
d F,T,Diverse”Processfor
Improving Photoresist
It is known to carry out a pretreatment of spin-coding hexaalkyldisilazane such as hexamethyldisilazane before applying a photoresist, as shown in 2003, Adhesion'.
このシランカップリング剤による前処理は、親水性であ
る基板表面をカップリングによp疎水性に変換し、疎水
性の樹脂例えばフォトレジストとの親和性を高めること
によって接着力を強化するものである。This pretreatment with a silane coupling agent converts the hydrophilic surface of the substrate into p-hydrophobic through coupling, and strengthens the adhesive force by increasing the affinity with hydrophobic resins such as photoresists. be.
従来のシランカップリング剤処理装置としては、前述し
たようにスピナーを用いたり、あるいはシランカップリ
ング剤中に基板を浸漬するための容器が使用されていた
0あるいはま之、第2図に示すようにシランカップリン
グ剤10’を入れたビーカー11を収容した密閉容器2
0の中に基板12を所定時間静置し、シランカップリン
グ剤蒸気により、基板12の表面を処理する装置が使用
されてい友。Conventional silane coupling agent processing equipment uses a spinner as described above, or a container for dipping the substrate in the silane coupling agent, as shown in Figure 2. A closed container 2 containing a beaker 11 containing a silane coupling agent 10'
An apparatus is used in which the substrate 12 is left standing in a vacuum chamber for a predetermined period of time, and the surface of the substrate 12 is treated with silane coupling agent vapor.
上述した従来の処理装置の中では、シランカップリング
剤蒸気を用いた処理がシランカップリング剤中のゴミや
不純物の影響がなく、塗布や浸漬による処理よりも有利
である。ところが、この蒸気による処理では密閉容器に
基板を収容する時。Among the conventional processing apparatuses described above, processing using silane coupling agent vapor is free from the influence of dust and impurities in the silane coupling agent, and is more advantageous than processing by coating or dipping. However, when processing with steam, the substrate is placed in a sealed container.
あるいは取ジ出す時に密閉容器を開放するため、密閉容
器内のシランカップリング剤蒸気の濃度が低下する。基
板収容時の開放時間あるいは収容前の保持時間によって
シランカップリング剤蒸気の初期#度が変動するだけで
なく、処理中も濃度が変化するため、シランカップリン
グ剤処理条件の制御が困難であるという欠点があった。Alternatively, since the sealed container is opened when taking out the container, the concentration of silane coupling agent vapor in the sealed container decreases. Not only does the initial concentration of the silane coupling agent vapor vary depending on the opening time during substrate storage or the holding time before storage, but the concentration also changes during processing, making it difficult to control the silane coupling agent processing conditions. There was a drawback.
また、シランカップリング剤は空気中の水分と反応し、
劣化する。例えばヘキサメチルジンラザンでは空気中の
水分と反応して、アンモニアを生bzする。In addition, silane coupling agents react with moisture in the air,
to degrade. For example, hexamethyldine lazan reacts with moisture in the air to produce ammonia.
従って、シランカップリング剤は水分のない雰囲気で保
管や使用することが必要であるが、従来の装置では操作
上空気中でしか処理できないという欠点もあっ之。Therefore, it is necessary to store and use the silane coupling agent in a moisture-free atmosphere, but conventional equipment also has the disadvantage that it can only be processed in air.
本発明のシランカップリング剤処理装置はシランカップ
リング剤?収容する減圧容器と、基板全収容する減圧容
器と、前記の2つの減圧容器を互に接続する配管と、該
配管に設けられた開閉弁と。Is the silane coupling agent treatment device of the present invention a silane coupling agent? A reduced pressure container for accommodating the substrate, a reduced pressure container for accommodating all of the substrates, a pipe connecting the two pressure reduced containers to each other, and an on-off valve provided in the pipe.
前記2つの減圧容器を減圧する手段とを含んで構成され
る。and means for reducing the pressure in the two pressure reducing containers.
次に、本発明の実施例について、図面を参照して詳細に
説明する。Next, embodiments of the present invention will be described in detail with reference to the drawings.
第1図は本発明の一実施例を示す構成図である。FIG. 1 is a block diagram showing an embodiment of the present invention.
シランカップリング剤10e入れたビーカー11を収容
する減圧容器1と、基板12を収容する減圧容器2があ
り、この2つの減圧容器1.2は途中にパルプ4をもつ
配管3によって互に接続されている。更に減圧容器1お
よび2と減圧ポンプ5とを接続する配管6とパルプ7.
8および減圧容器2を大気圧に戻すtめのリークバルブ
9が設けられて構成されている。There is a vacuum container 1 containing a beaker 11 containing a silane coupling agent 10e and a vacuum container 2 containing a substrate 12, and these two vacuum containers 1.2 are connected to each other by a pipe 3 having a pulp 4 in the middle. ing. Further, piping 6 connecting the vacuum containers 1 and 2 and the vacuum pump 5 and pulp 7.
8 and a leak valve 9 for returning the pressure reducing container 2 to atmospheric pressure.
ここで、減圧容器や減圧ポンプは超高真空用のものであ
る必要はなく、大気圧に比べて十分小さな圧力になれば
よい。従ってダイヤプラム型ポンプやンーブションポン
プ等が使用できる。これらのオイルフリーポンプは基板
への有機物汚染がない0
第1図に示し之装置によるシラ/カップリング剤処理は
先ず、減圧容器1全パルプ7全開にして所定圧力まで減
圧する。減圧後バルブ7を閉にし、次に減圧容器2をパ
ルプ8を開にして減圧した後バルブ8を閉じる。次に減
圧容器1,2を接続するパルプ4を開にすると、減圧容
器1からシランカップリング剤蒸気が減圧容器2に流入
し、基板12の表面が処理される。所定の処理終了後は
パルプ4を閉にし、パルプ8を開にすると減圧容器2か
ら、シランカップリング剤蒸気が排出されて、処理が停
止するため処理の制御が容易にできる0次の基板を処理
するには、リークパルプ9の操作により減圧容器2を大
気圧にし、基板全交換し友後、減圧容器lを所定圧力1
で減圧することから処理を開始する。この減圧容器1を
所出圧力まで減圧することにより、容器IP3のシラン
カップリング剤蒸気濃度を処理開始にあ几って一定にす
ることが可能となり、再現性にすぐれたシラ/カップリ
ング剤処理ができる。Here, the reduced pressure container and the reduced pressure pump do not need to be for ultra-high vacuum use, and only need to have a pressure sufficiently lower than atmospheric pressure. Therefore, a diaphragm type pump, a rotation pump, etc. can be used. These oil-free pumps do not cause organic contamination to the substrate. In the silica/coupling agent treatment using the apparatus shown in FIG. 1, first, the vacuum container 1 and pulp 7 are fully opened and the pressure is reduced to a predetermined pressure. After the pressure is reduced, the valve 7 is closed, and then the pulp 8 of the pressure reduction container 2 is opened to reduce the pressure, and then the valve 8 is closed. Next, when the pulp 4 connecting the vacuum vessels 1 and 2 is opened, silane coupling agent vapor flows from the vacuum vessel 1 into the vacuum vessel 2, and the surface of the substrate 12 is treated. After the predetermined treatment is completed, the pulp 4 is closed and the pulp 8 is opened, and the silane coupling agent vapor is discharged from the vacuum container 2, and the treatment is stopped. Therefore, a zero-order substrate can be easily controlled. To process, the vacuum container 2 is brought to atmospheric pressure by operating the leak pulp 9, and after replacing all the substrates, the vacuum container 1 is brought to a predetermined pressure of 1.
Start the process by reducing the pressure. By reducing the pressure in the vacuum container 1 to the desired pressure, it becomes possible to keep the silane coupling agent vapor concentration in the container IP3 constant after the start of treatment, resulting in highly reproducible silane/coupling agent treatment. I can do it.
更にシランカップリング剤処理後にリークパルプ9から
、例えば窒素ガス等の乾慄不活性ガスを減圧容器2に導
入することによって、フォトレジスト塗布までシランカ
ップリング剤が処理された基板を清浄に安定に保管する
ことも可能である。Furthermore, by introducing a dry inert gas such as nitrogen gas into the vacuum container 2 from the leak pulp 9 after the silane coupling agent treatment, the substrate treated with the silane coupling agent can be kept clean and stable until the photoresist is applied. It is also possible to store it.
本発明のシランカップリング剤処理装置に、基板の処理
前に、減圧容器1を所定圧力まで減圧することおよび処
理後に減圧容器2の中のシランカップリング剤蒸気を排
気して、処理を完全に停止させることにより、容易にシ
ランカップリング剤処理を制御することが可能となる。In the silane coupling agent processing apparatus of the present invention, before processing the substrate, the pressure in the vacuum container 1 is reduced to a predetermined pressure, and after the processing, the silane coupling agent vapor in the vacuum container 2 is exhausted to completely complete the processing. By stopping the silane coupling agent treatment, it becomes possible to easily control the silane coupling agent treatment.
ま之、シランカップリング剤は減圧状態で保存され、使
用される九め、大気中の水蒸気と反応して劣化すること
も防止できる。Furthermore, the silane coupling agent is stored under reduced pressure to prevent it from reacting with water vapor in the atmosphere and deteriorating during use.
第1図は本発明の一実施例を示す構成図、第2図は従来
の処理装置の一例金示す構成図である。
1・・・・・・減圧容器、2・・・・・・減圧容器、3
・・・・・・配管、4・・・・・・パルプ、5・・・・
・・減圧ポンプ、6・・・・・・減圧配管、7,8・・
・・・・パルプ、9・・・・・・リークパルプ、10・
・・・・・シランカップリング剤、11・・・・・・ビ
ーカー、12・・・・・・基板、20・・・・・・密閉
容器0 7ハで・き。
1、、!
代理人 弁理士 円 原 晋ぐ、 、ン筋2
図FIG. 1 is a block diagram showing an embodiment of the present invention, and FIG. 2 is a block diagram showing an example of a conventional processing apparatus. 1...Reduced pressure container, 2...Reduced pressure container, 3
...Piping, 4...Pulp, 5...
...Reduction pump, 6...Reduction piping, 7, 8...
...Pulp, 9...Leak pulp, 10.
... Silane coupling agent, 11 ... Beaker, 12 ... Substrate, 20 ... Airtight container 07. 1,,! Agent: Susumu Enhara, Patent Attorney, Nsuji 2
figure
Claims (1)
板を収容する第2の減圧容器と、前記第1と第2の減圧
容器を互に接続する配管と、前記配管に設けられた開閉
弁と、前記第1と第2の減圧容器を減圧する減圧手段と
を含んで構成されることを特徴とするシランカップリン
グ剤処理装置。A first reduced pressure container that accommodates a silane coupling agent, a second reduced pressure container that contains a substrate, piping that connects the first and second reduced pressure containers, and an on-off valve provided in the piping. A silane coupling agent processing apparatus comprising: and a pressure reduction means for reducing the pressure in the first and second pressure reduction containers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27286185A JPS62131264A (en) | 1985-12-03 | 1985-12-03 | Apparatus for treating silane coupling agent |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27286185A JPS62131264A (en) | 1985-12-03 | 1985-12-03 | Apparatus for treating silane coupling agent |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62131264A true JPS62131264A (en) | 1987-06-13 |
Family
ID=17519793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27286185A Pending JPS62131264A (en) | 1985-12-03 | 1985-12-03 | Apparatus for treating silane coupling agent |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62131264A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6449119A (en) * | 1987-08-20 | 1989-02-23 | Sony Corp | Magnetic recording medium |
JPH09160255A (en) * | 1995-12-05 | 1997-06-20 | Dainippon Screen Mfg Co Ltd | Tight adhesion intensifying device |
JP2007155913A (en) * | 2005-12-01 | 2007-06-21 | Omron Corp | Method for bonding glass member for optical communication |
JP2010024484A (en) * | 2008-07-17 | 2010-02-04 | Seiko Epson Corp | Surface treatment apparatus and surface treatment method |
KR100981820B1 (en) | 2008-09-08 | 2010-09-13 | 경희대학교 산학협력단 | Substrate Surface Treatment Device and Method Using TMCS Vapor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5685825A (en) * | 1979-12-17 | 1981-07-13 | Nec Corp | Thin film coating device of semiconductor wafer |
-
1985
- 1985-12-03 JP JP27286185A patent/JPS62131264A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5685825A (en) * | 1979-12-17 | 1981-07-13 | Nec Corp | Thin film coating device of semiconductor wafer |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6449119A (en) * | 1987-08-20 | 1989-02-23 | Sony Corp | Magnetic recording medium |
JPH09160255A (en) * | 1995-12-05 | 1997-06-20 | Dainippon Screen Mfg Co Ltd | Tight adhesion intensifying device |
JP2007155913A (en) * | 2005-12-01 | 2007-06-21 | Omron Corp | Method for bonding glass member for optical communication |
JP2010024484A (en) * | 2008-07-17 | 2010-02-04 | Seiko Epson Corp | Surface treatment apparatus and surface treatment method |
KR100981820B1 (en) | 2008-09-08 | 2010-09-13 | 경희대학교 산학협력단 | Substrate Surface Treatment Device and Method Using TMCS Vapor |
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