JPS5685825A - Thin film coating device of semiconductor wafer - Google Patents

Thin film coating device of semiconductor wafer

Info

Publication number
JPS5685825A
JPS5685825A JP16377579A JP16377579A JPS5685825A JP S5685825 A JPS5685825 A JP S5685825A JP 16377579 A JP16377579 A JP 16377579A JP 16377579 A JP16377579 A JP 16377579A JP S5685825 A JPS5685825 A JP S5685825A
Authority
JP
Japan
Prior art keywords
thin film
reinforcing agent
anchor reinforcing
wafer
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16377579A
Other languages
Japanese (ja)
Other versions
JPS6232614B2 (en
Inventor
Minoru Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16377579A priority Critical patent/JPS5685825A/en
Publication of JPS5685825A publication Critical patent/JPS5685825A/en
Publication of JPS6232614B2 publication Critical patent/JPS6232614B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)

Abstract

PURPOSE:To obtain a uniform thin film through the effectie use of an anchor reinforcing agent by a method wherein the vapor of the anchor reinforcing agent and a mixed gas of compressed gas are injected into a wafer. CONSTITUTION:The compressed gas is introduced in a vessel 3, the anchor reinforcing agent 5 is heated to cause vapor to be promoted and the mixed gas is discharged 2 and injected into the wafer 8 through a nozzle 7. The wafer 8 is adsorbed to and rotated by means of a motor 10 to be coated for forming a thin film. A valve 13 regulates a pressure and electromagnetic valves 12, 12' and flow control valves 11, 11' control the injection and displacement of the compressed gas and mixes gas respectively and control a film tickness. With this construction, since the expensive anchor reinforcing agent can effectively be utilized, it is economical, and the film thickness control can be performed easily and in high precesion.
JP16377579A 1979-12-17 1979-12-17 Thin film coating device of semiconductor wafer Granted JPS5685825A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16377579A JPS5685825A (en) 1979-12-17 1979-12-17 Thin film coating device of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16377579A JPS5685825A (en) 1979-12-17 1979-12-17 Thin film coating device of semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS5685825A true JPS5685825A (en) 1981-07-13
JPS6232614B2 JPS6232614B2 (en) 1987-07-15

Family

ID=15780474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16377579A Granted JPS5685825A (en) 1979-12-17 1979-12-17 Thin film coating device of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5685825A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988824A (en) * 1982-11-12 1984-05-22 Hitachi Tokyo Electronics Co Ltd Wafer processing apparatus
JPS59228719A (en) * 1983-06-10 1984-12-22 Hitachi Tokyo Electronics Co Ltd Method and apparatus for manufacturing electronic element
JPS6122627A (en) * 1984-07-10 1986-01-31 Mitsubishi Electric Corp Photo-sensitive resin coating nozzle
JPS62131264A (en) * 1985-12-03 1987-06-13 Nec Corp Apparatus for treating silane coupling agent
JPS62148943A (en) * 1985-12-23 1987-07-02 Nec Corp Treatment with silane coupling agent
JPS6425535A (en) * 1987-07-22 1989-01-27 Matsushita Electronics Corp Treatment of substrate for forming resist film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02111911U (en) * 1989-02-20 1990-09-07

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988824A (en) * 1982-11-12 1984-05-22 Hitachi Tokyo Electronics Co Ltd Wafer processing apparatus
JPS59228719A (en) * 1983-06-10 1984-12-22 Hitachi Tokyo Electronics Co Ltd Method and apparatus for manufacturing electronic element
JPS6122627A (en) * 1984-07-10 1986-01-31 Mitsubishi Electric Corp Photo-sensitive resin coating nozzle
JPH0237687B2 (en) * 1984-07-10 1990-08-27 Mitsubishi Electric Corp
JPS62131264A (en) * 1985-12-03 1987-06-13 Nec Corp Apparatus for treating silane coupling agent
JPS62148943A (en) * 1985-12-23 1987-07-02 Nec Corp Treatment with silane coupling agent
JPS6425535A (en) * 1987-07-22 1989-01-27 Matsushita Electronics Corp Treatment of substrate for forming resist film

Also Published As

Publication number Publication date
JPS6232614B2 (en) 1987-07-15

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