JPS62130536A - Semiconductor holding pincers - Google Patents
Semiconductor holding pincersInfo
- Publication number
- JPS62130536A JPS62130536A JP27232885A JP27232885A JPS62130536A JP S62130536 A JPS62130536 A JP S62130536A JP 27232885 A JP27232885 A JP 27232885A JP 27232885 A JP27232885 A JP 27232885A JP S62130536 A JPS62130536 A JP S62130536A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- pincers
- recess
- gripping
- tweezers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Gripping Jigs, Holding Jigs, And Positioning Jigs (AREA)
Abstract
Description
【発明の詳細な説明】
(イ)産業上の利用分野
この発明は、例えば、ウェハに表面処理を施す際にウェ
ハを把持し、各処理工程へ移動させるのに使用する半導
体把持用ピンセットに関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to semiconductor gripping tweezers used, for example, to grip a wafer and move it to each processing step when subjecting the wafer to surface treatment.
(ロ)従来の技術
通常、例えばシリコンプレーナエピタキシャルトランジ
スタの製作に際しては、トランジスタの基板をなす比抵
抗の小さいN型シリコンウェハ(サブストレーナ・シリ
コン基板)の表面に、比抵抗の高いN型シリコン層(エ
ピタキシャル層)を形成することが行われる。このエピ
タキシャル層の形成には、エピタキシャル装置と称する
、例えばバレル形縦形炉が使用される。この炉内の中央
には、回転するサセプタと称する支持台が配備され、こ
の支持台の傾斜面に多数のウェハ収容窪み部が縦列状に
設けられている。把持部材で把持されたウェハは、この
窪み部に誘導され、装填された後、炉内の高温とガスと
を媒体として気相反応が促進し、ウェハ表面にエピタキ
シャル層を成長させ、コレクタ(N型半導体)抵抗を下
げることが知られている。(b) Conventional technology Normally, for example, when manufacturing a silicon planar epitaxial transistor, a high resistivity N-type silicon layer is placed on the surface of a low resistivity N-type silicon wafer (substrainer silicon substrate) that forms the substrate of the transistor. (epitaxial layer) is formed. For the formation of this epitaxial layer, a so-called epitaxial apparatus, for example a barrel-shaped vertical furnace, is used. A rotating support called a susceptor is provided at the center of the furnace, and a large number of wafer-accommodating recesses are provided in columns on the inclined surface of the support. The wafer gripped by the gripping member is guided to this recess and loaded, and then a gas phase reaction is promoted using the high temperature and gas in the furnace as a medium, growing an epitaxial layer on the wafer surface and forming a collector (N type semiconductor) is known to lower resistance.
従来、ウェハを上記窪み部に装脱させる把持部材として
、通常のピンセット或いは真空式ピンセットが使用され
ている。Conventionally, ordinary tweezers or vacuum tweezers have been used as a gripping member for loading and unloading the wafer into the recess.
(ハ)発明が解決しようとする問題点
現在使用されている通常のピンセットには、挾み片が金
属製のものと、表面をテフロンコーティングしたものと
がある。前者の金属製のものでは、ウェハの表面を金属
粉や酸化物等による汚染の虞れがあり、一方、後者のテ
フロンコートしたものでは、酸化等による金属汚染の虞
れがない反面、熱によって剥離したテフロン屑等がウェ
ハ表面を汚す虞れがある。(c) Problems to be Solved by the Invention Among the ordinary tweezers currently in use, there are those whose gripping pieces are made of metal, and those whose surfaces are coated with Teflon. The former metal type has the risk of contaminating the wafer surface with metal powder and oxides, while the latter Teflon coated type has no risk of metal contamination due to oxidation, etc. There is a risk that the peeled off Teflon debris may contaminate the wafer surface.
また、近年使用されている真空式のピンセットは、内部
が中空な偏平状杆の先端下面を開口し、この偏平状杆に
バキューム装置を連続したもので、使用に際してはウェ
ハに対し、この偏平状杆の開口面を接面させ、吸引して
持ち上げる方式のものである。In addition, the vacuum type tweezers that have been used in recent years have a hollow flat rod with an opening at the bottom of the tip, and a vacuum device is connected to this flat rod. This is a method in which the opening side of the rod is brought into contact with the other side and lifted by suction.
ところが、この真空式ピンセットでは、通常のピンセッ
トのようなウェハ汚染の問題は解消される反面、ウェハ
を単一の吸引面で片手持ちするものである為、持ち上げ
且つ移動する際の角度によって、ウェハが脱落する等の
不利があった。However, while these vacuum tweezers eliminate the problem of wafer contamination that occurs with regular tweezers, they hold the wafer with one hand on a single suction surface, so depending on the angle when lifting and moving the wafer, There were disadvantages such as falling off.
この発明は、従来のものが持つ、以上のような問題点を
解消させ、ウェハを汚染せず、適正且つ安定して持ち運
びし得る半導体把持用ピンセットを提供することを目的
とする。It is an object of the present invention to provide semiconductor gripping tweezers that solve the above-mentioned problems of the conventional tweezers, do not contaminate wafers, and can be carried properly and stably.
(ニ)問題点を解決するための手段及び作用この目的を
達成させるために、この発明の半導体把持用ピンセット
は、次のような構成としている。(d) Means and operation for solving the problem In order to achieve this object, the semiconductor gripping tweezers of the present invention have the following configuration.
半導体把持用ピンセットは、水平方向へ移動可能に軸止
された一対の挟み部材の一方の挟み部材に吸引手段を備
え、他方の挟み部材に前記吸引手段に対応するガス噴き
付け手段を備えている。The semiconductor gripping tweezers include a pair of clamping members pivoted so as to be movable in the horizontal direction, one of which is equipped with suction means, and the other clamping member is equipped with gas spraying means corresponding to the suction means. .
このような構成を有するピンセットでは、ウェハの裏面
が下部挟み部材の上面に位置した状態で、ウェハは一対
の挟み部材間に間隙をもって保持される。In the tweezers having such a configuration, the wafer is held between the pair of clamping members with a gap between the pair of clamping members, with the back surface of the wafer positioned on the upper surface of the lower clamping member.
この状態で、ウェハの表面側には上部挟み部材からガス
が噴射され、ウェハは下部挟み部材側へ押し付けられる
と同時に、下部挟み部材の吸引によって吸着される。ウ
ェハは、この両側からの相互作用により、安定状態で挟
み固定される。In this state, gas is injected from the upper nipping member to the front side of the wafer, and the wafer is pressed toward the lower nipping member and at the same time is attracted by the suction of the lower nipping member. The wafer is clamped and fixed in a stable state by this interaction from both sides.
(ホ)実施例
第1図は、この発明に係る半導体把持用ピンセyl−の
具体的な一実施例を示す斜視図である。(E) Embodiment FIG. 1 is a perspective view showing a specific embodiment of the semiconductor gripping pincer according to the present invention.
半導体把持用ピンセット1は、上部挟み部材2と下部挟
み部材3とから成る一対の挟み部材で構成されている。The semiconductor gripping tweezers 1 are comprised of a pair of clamping members, an upper clamping member 2 and a lower clamping member 3.
上部挟み部材2と下部挟み部材3は、一定間隔を開いて
重合し、担止ピン4を介して枢着され、水平方向へ移動
自在とされている。The upper clamping member 2 and the lower clamping member 3 overlap with each other at a constant interval, are pivotally connected via a support pin 4, and are movable in the horizontal direction.
下部挟み部材3は、内部が中空の偏平なケース体で、平
面形状がほぼ7字形状をしている。The lower clipping member 3 is a flat case body with a hollow interior, and has a planar shape of approximately a 7-shape.
一定長さを有する操作用基部31の先端側を二股状に分
岐させて、先端分岐部32.32を一体に突設し、この
左右に張り出す先端分岐部32をウェハ5の支承部とし
、この先端分岐部32.32の先端表面には吸引用の開
口部33.33が開口しである。また、前記操作用基部
31の基端部には、ホース34を介して小型バキューム
装置35と接続させ、開口部33に接面するウェハ5を
吸引するようにしている。The distal end side of the operating base 31 having a certain length is bifurcated, and the distal branch parts 32 and 32 are integrally protruded, and the distal branch parts 32 extending left and right are used as supporting parts for the wafer 5, A suction opening 33.33 is opened on the distal end surface of this distal branch 32.32. Further, the base end of the operating base 31 is connected to a small vacuum device 35 via a hose 34 to suck the wafer 5 that is in contact with the opening 33.
前記上部挟み部材2は、上記下部挟み部材3とほぼ同様
な構造で、平面形状がY字状をし内部が中空の偏平なケ
ース体である。この先端分岐部21.21の先端下部に
は、開口ノズル22が下向きに突設しである。更に、操
作用基部23の基端には、ホース24を介して窒素ガス
タンクを備える小型ガス圧送装置25と連続させ、ノズ
ル22からウェハ5に対し不活性な窒素ガスを噴き付け
るようにしている。The upper sandwiching member 2 has substantially the same structure as the lower sandwiching member 3, and is a flat case body with a Y-shaped planar shape and a hollow interior. An opening nozzle 22 is provided to protrude downward from the lower part of the tip of the tip branch portion 21.21. Further, the base end of the operating base 23 is connected via a hose 24 to a small gas pressure feeding device 25 equipped with a nitrogen gas tank, so that inert nitrogen gas is sprayed from a nozzle 22 onto the wafer 5.
尚、実施例では、ガス圧送装置25のホース24の先端
部を上部挟み部材2の基端部、つまり中空路(第2図参
照)26端部に接続する例を示したが、実施に際しては
、ホース24を中空路26に挿入し、ホース24先端を
開口ノズル22に直接接続しても良い。また、バキュー
ム装置35のホース34も同様に、中空路36に挿入し
て吸引用開口部33と直接接続しても良い。この場合、
吸引及び噴出効率が一層向上すると共に、挟み部材2.
3のスムーズな水平移動を達成し得る。In the embodiment, an example was shown in which the tip of the hose 24 of the gas pressure feeding device 25 is connected to the base end of the upper sandwiching member 2, that is, the end of the hollow passage (see FIG. 2). , the hose 24 may be inserted into the hollow passage 26 and the tip of the hose 24 may be directly connected to the opening nozzle 22. Similarly, the hose 34 of the vacuum device 35 may also be inserted into the hollow passage 36 and directly connected to the suction opening 33. in this case,
In addition to further improving suction and ejection efficiency, the pinching member 2.
3 smooth horizontal movement can be achieved.
このような構成を有する半導体把持用ピンセットの使用
に際しては、先ず、通常は上下方向に重合している上部
挟み部材2を、担止ピン4を介して左右方向く水平方向
)へ移動させ、下部挟み部材3の先端分岐部32.32
上面にウェハ5 (の裏面側)を331fffする。こ
の状態で、上部挟み部材2を原状位置に復帰させ、上下
挟み部材2.3間にウェハ5を保持する。この状態にお
いて、ウェハ5の表面は上部挟み部材2とは接面してい
ない。When using the semiconductor gripping tweezers having such a configuration, first, the upper clamping member 2, which is usually overlapped in the vertical direction, is moved laterally (horizontally) via the holding pin 4, and the lower part Tip branch part 32.32 of pinch member 3
Wafer 5 (back side) is placed 331fff on the top surface. In this state, the upper clamping member 2 is returned to its original position, and the wafer 5 is held between the upper and lower clamping members 2.3. In this state, the surface of the wafer 5 is not in contact with the upper sandwiching member 2.
第2図は、ウェハ5をエピタキシャル装置(バレル形縦
形炉)の支持台6に装着する状態を示している。支持台
6の傾斜面には、縦列状にウェハ収容窪み部61が複数
凹設されており、この窪み部61の底面には、ウェハ5
の裏面を支承する突子62が複数突設されている。FIG. 2 shows a state in which the wafer 5 is mounted on a support 6 of an epitaxial apparatus (barrel-type vertical furnace). A plurality of wafer accommodating recesses 61 are provided in a vertical line on the inclined surface of the support base 6, and the bottom surface of the recesses 61 is provided with wafers 5.
A plurality of protrusions 62 are provided to support the back surface of the protrusion.
一対の挾み部材2.3間に保持されるウェハ5に対し、
今、上部挟み部材2の開口ノズル22から窒素ガスを噴
出させる時、ウェハ5は強(下部挟み部材3に押し付け
られる。同時に下部挟み部材3では、接面するウェハ5
を吸引用開口面33で吸引する。ここにおいて、ウェハ
5は一定の角度を開いた上下の先端分岐部21.32間
でそれぞれ2点支持され、且つ両側の噴き付け・吸引作
用により完全に固定される。With respect to the wafer 5 held between the pair of sandwiching members 2.3,
Now, when nitrogen gas is ejected from the opening nozzle 22 of the upper sandwich member 2, the wafer 5 is strongly pressed against the lower sandwich member 3. At the same time, the lower sandwich member 3 presses the wafer 5
is suctioned by the suction opening surface 33. Here, the wafer 5 is supported at two points between the upper and lower tip branch portions 21 and 32 which are opened at a certain angle, and is completely fixed by the spraying and suction action on both sides.
かくして、ウェハ5は、第2図のように支持台の窪み部
61開ロ面に移動させられる。この移動中、ウェハ5の
表面はガス噴射作用を受けるのみで上部挟み部材2とは
接触せず、汚染の虞れが全くない状態を確保したまま、
ウェハ表面側を開口面に合わせて嵌入さ廿られる。Thus, the wafer 5 is moved to the open side of the recess 61 of the support stand as shown in FIG. During this movement, the surface of the wafer 5 is only subjected to the gas injection action and does not come into contact with the upper sandwiching member 2, ensuring that there is no risk of contamination.
The wafer is inserted with the front side aligned with the opening surface.
ウェハ5の下部が窪み部61に嵌入した後、下部挟み部
材3の吸引を停止させ、下部挟み部材3のみを水平移動
する時、ウェハ5は上部挟み部材2のガス噴射により窪
み部61内に押し付けられ、完全に嵌入位置する。After the lower part of the wafer 5 is inserted into the recess 61, when the suction of the lower gripping member 3 is stopped and only the lower gripping member 3 is moved horizontally, the wafer 5 is pushed into the recess 61 by the gas jet of the upper gripping member 2. It is pressed and completely inserted into the position.
第3図は、エピタキシャル層の成長処理が終了したウェ
ハ5を、収容窪み部61から取り出す状況を示している
。FIG. 3 shows a situation in which the wafer 5 on which the epitaxial layer growth process has been completed is taken out from the accommodation recess 61.
取り出す際は、窪み部61の突子62によって生じるウ
ェハ5と窪み部61との間隙に、下部挟み部材3の先端
部を挿入した後、上部挟み部材2をウェハ5上に移動さ
せて、上下挟み部材2.3間にウェハを保持し、両側か
ら噴き付けと吸引の相互作用によって固定し、窪み部6
1から上方へ引き出す。When taking out the wafer, insert the tip of the lower clamping member 3 into the gap between the wafer 5 and the cavity 61 created by the protrusions 62 of the cavity 61, and then move the upper clamping member 2 over the wafer 5, and then move it up and down. The wafer is held between the sandwiching members 2 and 3 and fixed by the interaction of spraying and suction from both sides, and
Pull upward from 1.
尚、突子62のない平坦な窪み部であっても、先端分岐
部32をより偏平薄型にすればウェハと窪み部61との
間に挿入でき、取出しに支障はない。It should be noted that even if the recess is flat without the protrusion 62, if the tip branch part 32 is made flatter and thinner, it can be inserted between the wafer and the recess 61, and there will be no problem in taking it out.
(へ)発明の効果
この発明では、以上のように、一対の挟み部材の一方に
噴き付け手段、他方に吸引手段を備えさせることとした
。(f) Effects of the Invention In this invention, as described above, one of the pair of pinching members is provided with a spraying means, and the other is provided with a suction means.
この発明によれば、一対の挟み部材間に間隙をもって保
持されるウェハは、対向する一方から噴き付け力によっ
て押圧され、同時に他方から吸引されて、挟み部材間に
完全に固定される。According to this invention, a wafer held with a gap between a pair of sandwiching members is pressed by a spraying force from one opposing side and simultaneously sucked from the other, and is completely fixed between the sandwiching members.
従って、従来のピンセットのように、ウェハを片手持ち
する方式ではないから、移動中、意に反して脱落する等
の不利が完全に解消される許かりでなく、把持によって
発生するウェハ金属汚染の虞れがない。Therefore, unlike conventional tweezers, the wafer is not held in one hand, so disadvantages such as the wafer falling off unexpectedly during movement cannot be completely eliminated, and the wafer is less susceptible to metal contamination caused by gripping. There is no danger.
しかも、この発明では、エピタキシャル層を成長させる
ウェハの表面は、ガス噴射による噴き付け力が作用する
のみで、挟み部材に接触しないから、極めて清浄状態で
把持てきる等、発明目的を達成した優れた効果を有する
。Moreover, in this invention, the surface of the wafer on which the epitaxial layer is grown is only affected by the spraying force from the gas jet and does not come into contact with the sandwiching member, so it can be held in an extremely clean state, which is an advantage that achieves the purpose of the invention. It has a good effect.
第1図は、この発明に係る半琢体把持用ピンセットの斜
視図、第2図は、ウェハを把持し支持台の収容窪み部に
嵌入させる状態を示す要部拡大断面図、第3図は、支持
台の窪み部からウェハを取り出す状態を示す要部拡大正
面図である。
2:上部挟み部材、 3:下部挟み部材、5:ウェハ、
22:開口ノズル、33:吸引用開口部。FIG. 1 is a perspective view of the tweezers for gripping a half-casing body according to the present invention, FIG. 2 is an enlarged cross-sectional view of a main part showing a state in which a wafer is gripped and inserted into a housing recess of a support base, and FIG. , is an enlarged front view of main parts showing a state in which a wafer is taken out from a recessed part of a support base. 2: Upper sandwich member, 3: Lower sandwich member, 5: Wafer,
22: Opening nozzle, 33: Suction opening.
Claims (2)
の一方の挟み部材に吸引手段を備え、他方の挟み部材に
前記吸引手段に対応するガス噴き付け手段を備えて成る
半導体把持用ピンセット。(1) For semiconductor gripping, comprising a pair of clamping members pivoted so as to be movable in the horizontal direction, one clamping member equipped with suction means, and the other clamping member equipped with gas spraying means corresponding to the suction means. tweezers.
部をそれぞれ二股状に分岐させ、一方の二股先端部に吸
引部、他方の二股先端部にガス噴き付け部を設けた特許
請求の範囲第1項記載の半導体把持用ピンセット。(2) The pair of pinching members have their tip portions, which are semiconductor gripping portions, branched into two branches, one of which is provided with a suction portion, and the other of which is provided with a gas spray portion. Tweezers for gripping semiconductors according to scope 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27232885A JPS62130536A (en) | 1985-12-02 | 1985-12-02 | Semiconductor holding pincers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27232885A JPS62130536A (en) | 1985-12-02 | 1985-12-02 | Semiconductor holding pincers |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62130536A true JPS62130536A (en) | 1987-06-12 |
Family
ID=17512354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27232885A Pending JPS62130536A (en) | 1985-12-02 | 1985-12-02 | Semiconductor holding pincers |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62130536A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04103652U (en) * | 1991-02-18 | 1992-09-07 | 株式会社富士通宮城エレクトロニクス | Vacuum tweezers |
JPH08264621A (en) * | 1988-02-12 | 1996-10-11 | Tokyo Electron Ltd | Processing method and processing device |
US5833288A (en) * | 1996-07-16 | 1998-11-10 | Nec Corporation | Vacuum suction forceps |
US6068316A (en) * | 1995-12-30 | 2000-05-30 | Samsung Electronics Co., Ltd. | Large diameter wafer conveying system and method thereof |
-
1985
- 1985-12-02 JP JP27232885A patent/JPS62130536A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08264621A (en) * | 1988-02-12 | 1996-10-11 | Tokyo Electron Ltd | Processing method and processing device |
JPH04103652U (en) * | 1991-02-18 | 1992-09-07 | 株式会社富士通宮城エレクトロニクス | Vacuum tweezers |
US6068316A (en) * | 1995-12-30 | 2000-05-30 | Samsung Electronics Co., Ltd. | Large diameter wafer conveying system and method thereof |
US5833288A (en) * | 1996-07-16 | 1998-11-10 | Nec Corporation | Vacuum suction forceps |
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