JPS62128173A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS62128173A JPS62128173A JP60267204A JP26720485A JPS62128173A JP S62128173 A JPS62128173 A JP S62128173A JP 60267204 A JP60267204 A JP 60267204A JP 26720485 A JP26720485 A JP 26720485A JP S62128173 A JPS62128173 A JP S62128173A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- electrode
- pulse
- charge storage
- storage section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 230000001360 synchronised effect Effects 0.000 claims abstract description 6
- 238000003384 imaging method Methods 0.000 claims description 12
- 238000009499 grossing Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000001444 catalytic combustion detection Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 206010047571 Visual impairment Diseases 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は光導電膜を積層させた形の固体撮像装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a solid-state imaging device in which photoconductive films are laminated.
光電変換を光導電膜で行なう固体撮像装置は開口率を大
きく取れるために高い感度を持つ。また入射光量の多く
は光導電膜内で吸収されるため、Ｓｉ基板内部での電荷
の発生が少なく低スミアという特徴を有する。更に光導
電膜の種類により分光感度も自由に選べるため、最近、
アモルファスシリコン膜、Ｚｎ１−ウＣｄ）（Ｔｏ膜等
を積層させた固体撮像装置の開発が進んでいる。Solid-state imaging devices that perform photoelectric conversion using a photoconductive film have high sensitivity because they have a large aperture ratio. Furthermore, since most of the amount of incident light is absorbed within the photoconductive film, less charge is generated within the Si substrate, resulting in low smear. Furthermore, the spectral sensitivity can be freely selected depending on the type of photoconductive film, so recently,
Development of solid-state imaging devices in which amorphous silicon films, Zn1-Cd) (To films, etc.) are laminated is progressing.
この種の固体撮像装置の一例としては、′ｄ！荷蓄積部
と電荷転送部とを有する半導体基板例えばＣＣＤ上に、
光導電膜と透明電極を順次積層させた形の構造のものが
ある。即ち、半導体基板に形成され一画素ごとに分離さ
れた電荷蓄積部となるダイオード領域に接続された画素
電極を半導体基板上に設け、この画素電極上に光導電膜
を形成し、更に光導電膜上に透明電極を設けている。そ
して光導電膜で発生した電荷を一定期間、電荷蓄積部に
蓄積した後、電荷蓄積部の電荷を電荷転送部により出力
端子に順次転送して１画像信号として読み出す。An example of this type of solid-state imaging device is 'd! On a semiconductor substrate, such as a CCD, having a charge storage section and a charge transfer section,
Some have a structure in which a photoconductive film and a transparent electrode are sequentially laminated. That is, a pixel electrode connected to a diode region formed on the semiconductor substrate and serving as a charge storage section separated for each pixel is provided on the semiconductor substrate, a photoconductive film is formed on this pixel electrode, and a photoconductive film is further formed on the pixel electrode. A transparent electrode is provided on top. After the charges generated in the photoconductive film are accumulated in the charge storage section for a certain period of time, the charges in the charge accumulation section are sequentially transferred to the output terminal by the charge transfer section and read out as one image signal.
ところでこの固体撮像装置は、電荷桁積部から電荷転送
部への信号電荷の移送が不完全転送モードで行なわれる
ため、信号電荷の一部が電荷蓄積部に取り残される。こ
の取り残された電荷が残他の原因となり、画質に悪影響
をもたらす。特に低照度での撮像の場合、この残像は数
フィールドにも及ぶ。By the way, in this solid-state imaging device, since the signal charge is transferred from the charge accumulation section to the charge transfer section in an incomplete transfer mode, a part of the signal charge is left behind in the charge storage section. This left-over charge causes residual charges and adversely affects image quality. Particularly in the case of imaging at low illuminance, this afterimage extends over several fields.
装置の提供を目的とする。 The purpose is to provide equipment.
即ち本発明は、絶縁層を介して電荷蓄積部と容斌結合す
る電極を設け、この電極に電荷蓄積部から電荷転送部に
信号電荷を移送する信号電荷読み出しパルスと同期した
パルス電圧を印加し、蓄積部電位を下げ、信号電荷読み
出しの際取り残された電荷を転送部へ移送させることを
特徴とする光導電膜積層型の固体撮像装置である。That is, the present invention provides an electrode that is capacitively coupled to the charge storage section through an insulating layer, and applies a pulse voltage to this electrode that is synchronized with a signal charge read pulse that transfers the signal charge from the charge storage section to the charge transfer section. , a photoconductive film stacked solid-state imaging device characterized by lowering the potential of the storage section and transferring the charges left behind during signal charge readout to the transfer section.
以下本発明の詳細を図面を参照して説明する。 The details of the present invention will be explained below with reference to the drawings.
第１図は本発明の一実施例を示す図である。これからこ
の実施例を製造工程に従って説明する。FIG. 1 is a diagram showing an embodiment of the present invention. This embodiment will now be described according to the manufacturing process.
まず半導体基板（１０）例えばＰ型シリコン基板の一面
には、ｎ＋型の埋め込みチャンネルＣＣＤからなる垂直
ＣＣＤ （１１）と、ｐｎ接合からなる電荷蓄積ダイオ
ード（１２）が隣接して形成されている。そして転送電
極（１３）を絶縁するための絶縁膜（１４）が、電荷蓄
積ダイオード（１２）のｎ十型領域上の一部が露出する
ように転送電極（１３）とともに形成されている。こう
して半導体基板（１０）には、電荷蓄積部や電荷転送部
が形成される。なお転送電極（１３）には外部から所定
のパルスが印加されるようになっており、電荷読み出し
パルスを転送電極（１３）に印加することにより電荷蓄
積ダイオード（１２）内の電荷を垂直ＣＯＤ （１１）
に移した後、順次一方向に転送できる。そして半導体基
板（１０）上に一部が電荷蓄積ダイオード（１２）即ち
電荷蓄積部に接触するように、例えばアルミニウムから
なる第１電極（１５）が互いに分離して形成されている
。また第１電極（１５）上には、例えばポリイミドから
なる絶縁層（１６）が形成されて、平滑化がなされてい
る。この絶縁層（１６）の形成は２回にわたって行なわ
れ、まず１回目の形成により半導体基板（１０）の表面
をある程度率らにした後１例えばアルミニウムからなる
電極（１７）を形成し、更に２回目の形成を行なって、
電極（１７）は絶縁層（１６）内に埋め込まれた形にな
っている。なお電極（１７）は、後述する第２電極（１
８）と対向する位置に形成され、パルス電圧を印加する
ための外部電源（１９）につながっている。そして絶縁
層（１６）にコンタクトホール（２０）が設けられ、絶
縁層（１６）上に所定の間隔をおいて例えばアルミニウ
ムからなる第２電極（１８）が形成されている。なお第
２電極（１８）はコンタクトホール（２０）を介して第
１電極（１５）と電気的に接続されている。First, on one surface of a semiconductor substrate (10), for example a P-type silicon substrate, a vertical CCD (11) consisting of an n+ type buried channel CCD and a charge storage diode (12) consisting of a pn junction are formed adjacent to each other. An insulating film (14) for insulating the transfer electrode (13) is formed together with the transfer electrode (13) so that a part of the n+ type region of the charge storage diode (12) is exposed. In this way, a charge storage section and a charge transfer section are formed in the semiconductor substrate (10). Note that a predetermined pulse is applied to the transfer electrode (13) from the outside, and by applying a charge read pulse to the transfer electrode (13), the charge in the charge storage diode (12) is converted into a vertical COD ( 11)
can be transferred in one direction sequentially. First electrodes (15) made of, for example, aluminum are formed separately from each other on the semiconductor substrate (10) so that a portion thereof contacts the charge storage diode (12), that is, the charge storage section. Further, an insulating layer (16) made of polyimide, for example, is formed on the first electrode (15) to smooth it. The formation of this insulating layer (16) is carried out twice: first, after the surface of the semiconductor substrate (10) is made somewhat rough by the first formation, an electrode (17) made of, for example, aluminum is formed; After the second formation,
The electrode (17) is embedded within the insulating layer (16). Note that the electrode (17) is a second electrode (17), which will be described later.
8), and is connected to an external power source (19) for applying a pulse voltage. A contact hole (20) is provided in the insulating layer (16), and a second electrode (18) made of, for example, aluminum is formed on the insulating layer (16) at a predetermined interval. Note that the second electrode (18) is electrically connected to the first electrode (15) via a contact hole (20).
そして第２電極（１８）上には、光導電膜（２１）例え
ばｉ型の水素化非晶質シリコン、バリア層（２２）例え
ばｐ型の水素化非晶質シリコンカーバイト及び例えばＩ
Ｔ○からなる透明電極（２３）が順次形成されている。And on the second electrode (18) there is a photoconductive film (21) such as i-type hydrogenated amorphous silicon, a barrier layer (22) such as p-type hydrogenated amorphous silicon carbide and, for example, I
Transparent electrodes (23) made of T◯ are sequentially formed.
ここでバリア層（２２）は、透明電極（２３）からの電
荷の注入を阻止する働きをもっている。また透明電極（
２３）は光導電膜（２１）にバイアス電圧を与えるため
に、外部電源（２４）につながっている。Here, the barrier layer (22) has the function of blocking charge injection from the transparent electrode (23). Also, transparent electrode (
23) is connected to an external power source (24) in order to apply a bias voltage to the photoconductive film (21).
次にこの実施例の動作を第２図と第３図を用いて説明す
る。ここで第２図はこの実施例における転送電極（１３
）と電極（１７）に印加するパルス波形を示す図であり
、同図（ａ）は転送電極（１３）に印加するパルスタイ
ミング、同図（ｂ）は電極（１７）に印加するパルスタ
イミングを表わしている。また第３図（ａ）〜（ｅ）は
第２図に示した時間ｔ１〜ｔ、における電荷蓄積部、電
荷転送部及びこの両者の間の電位の変化を示す図である
。Next, the operation of this embodiment will be explained using FIGS. 2 and 3. Here, FIG. 2 shows the transfer electrode (13) in this embodiment.
) and the pulse waveform applied to the electrode (17), in which (a) shows the pulse timing applied to the transfer electrode (13), and (b) shows the pulse timing applied to the electrode (17). It represents. Further, FIGS. 3(a) to 3(e) are diagrams showing changes in the charge storage section, the charge transfer section, and the potential between the two during times t1 to t shown in FIG. 2.
第２図（ａ）において、Ａは電荷転送パルス、Ｂは信号
読み出しパルスであり１例えば時間ｔ２では、電荷蓄積
部から電荷転送部への信号電荷の読み出しが行なわれて
いる状態にある。また第２図（ｂ）かられかるように、
電極（１７）には信号読み出しパルスＢと同期したパル
ス電圧Ｃ１即ち通常は電圧Ｖａであるが時間１．．１．
の間の途中から時間ｔ、までは電圧ｖｂとなるパルス電
圧が印加されている。In FIG. 2(a), A is a charge transfer pulse, B is a signal readout pulse, and, for example, at time t2, signal charges are being read from the charge storage section to the charge transfer section. Also, as can be seen from Figure 2(b),
The electrode (17) is supplied with a pulse voltage C1 synchronized with the signal readout pulse B, that is, normally the voltage Va, but at a time of 1. ．． 1.
A pulse voltage of voltage vb is applied from the middle of the period to time t.
いま第１図に示した固体撮像装置において、光電変換を
行なう光導電膜（２１）に光が入射したとする。すると
入射光により光導電膜（２１）で発生していた信号電荷
は電荷蓄積ダイオード（１２）即ち電荷蓄積部に蓄積さ
れるが、第３図（ａ）に示すように、時間ｔ工では電荷
蓄積部に信号電荷Ｑｓｉｇが蓄積されていてその電位は
Ｖｓとなっている。なお同図（ａ）において、 Ｖｄは
信号電荷が蓄積され始めるときの電位であり、この電位
は電１’ｆｆｉ （１７）に印加する電圧Ｖａで設定さ
れる。次に時間ｔ２では、信号読み出しパルスＢがＯＮ
の状態であり、信号電荷が電荷転送部へ移送される。し
かしこの動作は不完全転送モードで行なわれるため、第
３図（ｂ）に示すように、電荷蓄積部にはＱｃ、の電荷
が取り残されてその電位はｖＬとなっており、この取り
残し電荷が残像の原因となる。そこで信号読み出しパル
スＢがまだＯＮである時間ｔ３には、電極（１７）にパ
ルス電圧Ｃを印加し、電圧をｖｂまで下げた状態にする
。すると電極（１７）は絶縁層（１６）内で第２電極（
１８）と対向する位置にある構造上、電荷蓄積部と容量
結合しており、前述の電圧変化により電荷蓄積部の電位
は低下し、第３図（ｃ）に示すように、取り残し電荷Ｑ
Ｌは電荷転送部へと流れ出す。このときの電荷蓄積部の
電位減少分はｖｂで決定されるが、ｖｂ−■、だけの電
位を減少させればよい。こうして取り残し電荷ＱＬは電
荷転送部へ流れ出し、信号の読み、残しはなくなるが、
この動作も不完全転送モードで行なわれるため、第３図
（ｃ）に示すように、電荷蓄積部の電位はＶＬになって
いる。しかし時間ｔ４即ち信号読み出しパルスがＯＦＦ
になったときに、第３図（ｄ）に示すように電荷転送部
の電位が下がり１時間ｔ、即ち電極（１７）の電圧がｖ
ｂがらＶａに上昇したとき、電荷蓄積部の電位はＶｄ
−Ｖしたけ上昇するため、第３図（ｅ）に示すように、
電荷蓄積部の電位は再びＶｄとなる。そしてこの電位Ｖ
ｄの状態がら、次のフィールドの信号電荷の蓄積が始ま
る。Assume that in the solid-state imaging device shown in FIG. 1, light is incident on a photoconductive film (21) that performs photoelectric conversion. Then, the signal charge generated in the photoconductive film (21) by the incident light is accumulated in the charge storage diode (12), that is, the charge storage part, but as shown in FIG. A signal charge Qsig is accumulated in the accumulation section, and its potential is Vs. In FIG. 3A, Vd is the potential at which signal charges begin to be accumulated, and this potential is set by the voltage Va applied to the voltage 1'ffi (17). Next, at time t2, signal read pulse B is turned ON.
The signal charge is transferred to the charge transfer section. However, since this operation is performed in incomplete transfer mode, as shown in FIG. 3(b), the charge Qc is left behind in the charge storage section and its potential becomes vL. This may cause afterimages. Therefore, at time t3 while the signal readout pulse B is still ON, a pulse voltage C is applied to the electrode (17) to lower the voltage to vb. Then, the electrode (17) becomes the second electrode (
18), it is capacitively coupled to the charge storage section due to its structure, and due to the voltage change described above, the potential of the charge storage section decreases, and as shown in FIG. 3(c), the remaining charge Q
L flows out to the charge transfer section. The potential reduction of the charge storage section at this time is determined by vb, but it is sufficient to reduce the potential by vb-■. In this way, the leftover charge QL flows to the charge transfer section, and the signal can be read and no leftover charge is left.
Since this operation is also performed in the incomplete transfer mode, the potential of the charge storage section is at VL, as shown in FIG. 3(c). However, at time t4, the signal read pulse is OFF.
As shown in FIG. 3(d), the potential of the charge transfer section decreases for one hour t, that is, the voltage of the electrode (17) becomes v.
When b rises to Va, the potential of the charge storage section becomes Vd
-V increases, as shown in Figure 3(e),
The potential of the charge storage section becomes Vd again. And this potential V
In state d, accumulation of signal charges for the next field begins.
この実施例では、電極（１７）に信号読み出しパルスＢ
と同期したパルス電圧を印加することにより、電荷蓄積
部に読み残した電荷を除去することができて残像は減少
し、不完全転送モードによる影響をなくすことができる
。。In this embodiment, the signal readout pulse B is applied to the electrode (17).
By applying a pulse voltage synchronized with , it is possible to remove charges left unread in the charge storage section, reduce afterimages, and eliminate the effects of incomplete transfer mode. .
第４図は本発明の他の実施例を示す図であり、第１図と
対応する部分には同一の符号を付しである。この実施例
は第１図に示した実施例と比べ、電極（１７）の位置が
異なっている。即ち電極（１７）は、第２電極（１８）
間の間隙の下部で電荷蓄積ダイオード（１２）と対向す
る位置に設けられている。そして転送電極（１３）及び
電極（１７）には、同じく第２図に １示すようなパル
ス電圧が印加されている。FIG. 4 is a diagram showing another embodiment of the present invention, and parts corresponding to those in FIG. 1 are given the same reference numerals. This embodiment differs from the embodiment shown in FIG. 1 in the position of the electrode (17). That is, the electrode (17) is the second electrode (18)
The charge storage diode (12) is provided at a position facing the charge storage diode (12) at the bottom of the gap between the two. A pulse voltage as shown at 1 in FIG. 2 is also applied to the transfer electrode (13) and the electrode (17).
この実施例は、電極（１７）が電荷蓄積部と容量結合し
ているため、第１図に示した実施例と同様の効果がある
ばかりでなく、第２電極（１８）間の間隙を通って半導
体基板（１０）に達する入射光を電極（１７）によりあ
る程度まで阻止することができ、スミアの発生を抑えら
れる。In this embodiment, since the electrode (17) is capacitively coupled to the charge storage section, it not only has the same effect as the embodiment shown in FIG. Incident light reaching the semiconductor substrate (10) can be blocked to some extent by the electrode (17), and the occurrence of smear can be suppressed.
なお電極（１７）を設ける位置は、第１図や第４図に示
した位置に限らず、絶縁層（１６）内で電荷蓄積部と容
量結合する位置、即ち第１電極（１５）或いは第２電極
（１８）と絶縁層（１６）を介して対向する位置であれ
ばよいことは言うまでもない。Note that the position where the electrode (17) is provided is not limited to the positions shown in FIGS. Needless to say, it is sufficient that the two electrodes (18) face each other with the insulating layer (16) in between.
以上説明したように本発明の固体撮像装置は。 As explained above, the solid-state imaging device of the present invention is provided.
絶縁層を介して電荷蓄積部と容量結合する電極を設け、
この電極に信号読み出しパルスと同期したパルス電圧を
印加することにより、読み残し電荷を電荷転送部へ流し
込み、残像を減少させることができる。Providing an electrode that capacitively couples with the charge storage part through an insulating layer,
By applying a pulse voltage synchronized with the signal readout pulse to this electrode, unread charges can be caused to flow into the charge transfer section, thereby reducing afterimages.
第１図は本発明の一実施例を示す断面図、第２図は第１
図に示した実施例における転送電極等に印加するパルス
波形の一例を示す図、第３図は第１図に示した実施例に
おける電荷蓄積部と電荷転送部の電位の変化の一例を示
す図、第４図は本発明の他の実施例を示す断面図である
。
（１０）・・・半導体基板
（１５）・・・第１電極
（１６）・・・絶縁層
（１７）・・・電極
（１８）・・・第２電極
（２１）・・・光導電膜
（２３）・・・透明電極
代理人 弁理士 則 近 憲 佑
同 大胡典夫
第 １ 凶
第２図
第 ３ 図
第４図FIG. 1 is a sectional view showing one embodiment of the present invention, and FIG.
FIG. 3 is a diagram showing an example of a pulse waveform applied to the transfer electrode etc. in the embodiment shown in FIG. , FIG. 4 is a sectional view showing another embodiment of the present invention. (10)...Semiconductor substrate (15)...First electrode (16)...Insulating layer (17)...Electrode (18)...Second electrode (21)...Photoconductive film (23)... Transparent electrode representative Patent attorney Nori Chika Ken Yudo Norio Ogo 1st figure 2nd figure 3rd figure 4th figure
Claims (2)
と、前記電荷蓄積部に接触するように互いに分離して形
成された第１電極と、この第１電極上を平滑化する絶縁
層と、前記第１電極と電気的に接続され且つ前記絶縁層
上に所定の間隔をおいて形成された第２電極と、この第
２電極上に形成された光導電膜と、この光導電膜上に形
成された透明電極とを備えた固体撮像装置において、前
記電荷蓄積部と容量結合するように前記絶縁層内に電極
を設け、前記電荷蓄積部から前記電荷転送部へ信号電荷
を読み出す信号読み出しパルスと同期したパルス電圧を
前記電極に印加することを特徴とする固体撮像装置。(1) A semiconductor substrate on which a charge storage section and a charge transfer section are formed, a first electrode formed separately from each other so as to contact the charge storage section, and an insulating layer smoothing the top of the first electrode. a second electrode electrically connected to the first electrode and formed on the insulating layer at a predetermined interval; a photoconductive film formed on the second electrode; and a photoconductive film formed on the second electrode. In the solid-state imaging device, an electrode is provided in the insulating layer so as to be capacitively coupled to the charge storage section, and a signal is read out from the charge storage section to the charge transfer section. A solid-state imaging device characterized in that a pulse voltage synchronized with a read pulse is applied to the electrode.
ていることを特徴とする特許請求の範囲第１項記載の固
体撮像装置。(2) The solid-state imaging device according to claim 1, wherein the electrode is located below the gap between the second electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60267204A JPS62128173A (en) | 1985-11-29 | 1985-11-29 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60267204A JPS62128173A (en) | 1985-11-29 | 1985-11-29 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62128173A true JPS62128173A (en) | 1987-06-10 |
Family
ID=17441573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60267204A Pending JPS62128173A (en) | 1985-11-29 | 1985-11-29 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62128173A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1326278A2 (en) * | 2002-01-07 | 2003-07-09 | Xerox Corporation | Image sensor with performance enhancing structures |
-
1985
- 1985-11-29 JP JP60267204A patent/JPS62128173A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1326278A2 (en) * | 2002-01-07 | 2003-07-09 | Xerox Corporation | Image sensor with performance enhancing structures |
| EP1326278A3 (en) * | 2002-01-07 | 2004-03-10 | Xerox Corporation | Image sensor with performance enhancing structures |
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