JPS621277B2 - - Google Patents
Info
- Publication number
- JPS621277B2 JPS621277B2 JP11058679A JP11058679A JPS621277B2 JP S621277 B2 JPS621277 B2 JP S621277B2 JP 11058679 A JP11058679 A JP 11058679A JP 11058679 A JP11058679 A JP 11058679A JP S621277 B2 JPS621277 B2 JP S621277B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- active layer
- light guide
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 30
- 230000003287 optical effect Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 description 13
- 230000010355 oscillation Effects 0.000 description 11
- 239000000969 carrier Substances 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11058679A JPS5635484A (en) | 1979-08-29 | 1979-08-29 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11058679A JPS5635484A (en) | 1979-08-29 | 1979-08-29 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5635484A JPS5635484A (en) | 1981-04-08 |
| JPS621277B2 true JPS621277B2 (ru) | 1987-01-12 |
Family
ID=14539597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11058679A Granted JPS5635484A (en) | 1979-08-29 | 1979-08-29 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5635484A (ru) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021006124A1 (ja) | 2019-07-08 | 2021-01-14 | 住友金属鉱山株式会社 | リチウムイオン二次電池用正極活物質およびリチウムイオン二次電池 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5871684A (ja) * | 1981-10-23 | 1983-04-28 | Fujitsu Ltd | 半導体発光装置 |
| JPS5873176A (ja) * | 1981-10-27 | 1983-05-02 | Agency Of Ind Science & Technol | 半導体レ−ザ |
| JPS6017977A (ja) * | 1983-07-11 | 1985-01-29 | Nec Corp | 半導体レ−ザダイオ−ド |
-
1979
- 1979-08-29 JP JP11058679A patent/JPS5635484A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021006124A1 (ja) | 2019-07-08 | 2021-01-14 | 住友金属鉱山株式会社 | リチウムイオン二次電池用正極活物質およびリチウムイオン二次電池 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5635484A (en) | 1981-04-08 |
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