JPS621263B2 - - Google Patents
Info
- Publication number
- JPS621263B2 JPS621263B2 JP54112942A JP11294279A JPS621263B2 JP S621263 B2 JPS621263 B2 JP S621263B2 JP 54112942 A JP54112942 A JP 54112942A JP 11294279 A JP11294279 A JP 11294279A JP S621263 B2 JPS621263 B2 JP S621263B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- semiconductor
- semiconductor substrate
- main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
Landscapes
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11294279A JPS5637676A (en) | 1979-09-05 | 1979-09-05 | Field effect type semiconductor switching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11294279A JPS5637676A (en) | 1979-09-05 | 1979-09-05 | Field effect type semiconductor switching device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5637676A JPS5637676A (en) | 1981-04-11 |
JPS621263B2 true JPS621263B2 (enrdf_load_stackoverflow) | 1987-01-12 |
Family
ID=14599354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11294279A Granted JPS5637676A (en) | 1979-09-05 | 1979-09-05 | Field effect type semiconductor switching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5637676A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61136270A (ja) * | 1984-12-06 | 1986-06-24 | Semiconductor Res Found | 双方向光スイツチ |
JPS61137365A (ja) * | 1984-12-08 | 1986-06-25 | Semiconductor Res Found | 光トリガ・光クエンチ静電誘導サイリスタ |
JP2003309130A (ja) * | 2002-04-17 | 2003-10-31 | Sanyo Electric Co Ltd | 半導体スイッチ回路装置 |
-
1979
- 1979-09-05 JP JP11294279A patent/JPS5637676A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5637676A (en) | 1981-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5629535A (en) | Bidirectional thyristor with MOS turn-on and turn-off capability | |
US5702961A (en) | Methods of forming insulated gate bipolar transistors having built-in freewheeling diodes and transistors formed thereby | |
US4967243A (en) | Power transistor structure with high speed integral antiparallel Schottky diode | |
US6091086A (en) | Reverse blocking IGBT | |
KR0161356B1 (ko) | 반도체 장치의 제조방법 | |
US4060821A (en) | Field controlled thyristor with buried grid | |
US5485022A (en) | High switching speed IGBT | |
JP3338185B2 (ja) | 半導体装置 | |
JPH0550866B2 (enrdf_load_stackoverflow) | ||
JPS62145777A (ja) | 絶縁ゲートトランジスタアレイ | |
JP2862027B2 (ja) | 絶縁ゲート型バイポーラトランジスタ | |
US3896476A (en) | Semiconductor switching device | |
US5793066A (en) | Base resistance controlled thyristor structure with high-density layout for increased current capacity | |
US5079607A (en) | Mos type semiconductor device | |
US5751022A (en) | Thyristor | |
JPH043113B2 (enrdf_load_stackoverflow) | ||
JPH07169868A (ja) | 少なくとも1個のバイポーラ・パワーデバイスを有する回路パターン及びその作動方法 | |
JPH03155677A (ja) | 伝導度変調型mosfet | |
EP0454201B1 (en) | A semiconductor device comprising a thyristor | |
JPS621263B2 (enrdf_load_stackoverflow) | ||
JPH0612823B2 (ja) | 二方向性の電力用高速mosfet素子 | |
US4910573A (en) | Gate turn-off thyristor and method of producing same | |
US4857977A (en) | Lateral metal-oxide-semiconductor controlled triacs | |
US3688164A (en) | Multi-layer-type switch device | |
US5925899A (en) | Vertical type insulated gate bipolar transistor having a planar gate structure |