JPS621258Y2 - - Google Patents
Info
- Publication number
- JPS621258Y2 JPS621258Y2 JP6356782U JP6356782U JPS621258Y2 JP S621258 Y2 JPS621258 Y2 JP S621258Y2 JP 6356782 U JP6356782 U JP 6356782U JP 6356782 U JP6356782 U JP 6356782U JP S621258 Y2 JPS621258 Y2 JP S621258Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- crystal substrate
- inp
- liquid phase
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 84
- 239000013078 crystal Substances 0.000 claims description 53
- 239000007791 liquid phase Substances 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 10
- 239000000470 constituent Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000003685 thermal hair damage Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6356782U JPS58168571U (ja) | 1982-04-30 | 1982-04-30 | 液相エピタキシヤル成長用装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6356782U JPS58168571U (ja) | 1982-04-30 | 1982-04-30 | 液相エピタキシヤル成長用装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58168571U JPS58168571U (ja) | 1983-11-10 |
| JPS621258Y2 true JPS621258Y2 (en, 2012) | 1987-01-13 |
Family
ID=30073667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6356782U Granted JPS58168571U (ja) | 1982-04-30 | 1982-04-30 | 液相エピタキシヤル成長用装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58168571U (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117616A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 液相エピタキシヤル成長方法 |
-
1982
- 1982-04-30 JP JP6356782U patent/JPS58168571U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58168571U (ja) | 1983-11-10 |
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