JPS621236A - 半導体装置の製法 - Google Patents

半導体装置の製法

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Publication number
JPS621236A
JPS621236A JP61082001A JP8200186A JPS621236A JP S621236 A JPS621236 A JP S621236A JP 61082001 A JP61082001 A JP 61082001A JP 8200186 A JP8200186 A JP 8200186A JP S621236 A JPS621236 A JP S621236A
Authority
JP
Japan
Prior art keywords
semiconductor
section
coating
polyimide
pellets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61082001A
Other languages
English (en)
Inventor
Tokio Kato
加藤　登季男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61082001A priority Critical patent/JPS621236A/ja
Publication of JPS621236A publication Critical patent/JPS621236A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体分野、特にその分野における電気的
、機械的、及び又は化学的な保護のための被膜を有する
半導体装置の製法に関するものである。
〔従来技術〕
半導体主面保護のためにポリイミド系有機被膜を形成す
ることが知られている。例えば、その−例は特開昭５２
−５８４６９号公報によって知られている。
〔発明が解決しようとする問題点〕
上に述べた公知技術においては、プラスチック封止（モ
ールド）の際に半導体主面に与えられるストレスを上記
ポリイミド系樹脂被膜で充分吸収することができない。
またそのストレスにより上記ポリイミド系樹脂被膜も損
傷を受けることがある。
本発明は信頼性のすぐれた半導体装置を提供することを
目的としてなされたものである。
さらに具体的には、本発明は半導体装置の外部あるいは
封止材料からの水分の侵入、ストレス、α線等高速粒子
によるダメージから半導体素子ペレットを保護し、信頼
性を向上させることを目的とする。
〔問題点を解決するための手段〕
本発明は、上記目的を達成するために、ウェーハ状態の
半導体基体主面をポリイミド系有機膜で覆い、そしてさ
らにそのウェーハ状態の半導体基体を半導体ペレットに
分割した後に、半導体ペレット主面に樹脂を被覆して半
導体ペレット主面を充分保護し、この後プラスチック封
止（レジンモールド）するものである。
〔作用〕
本発明によれば、半導体ペレット主面へのダメージは緩
和される。すなわち、ウェーハ状態で被覆した保護膜（
ポリイミド系有機被膜）と半導体ペレットにした後に、
その半導体ペレット主面に被覆した保護膜（樹脂塗布膜
）との重ね膜によりプラスチック封止の際のストレスを
吸収し、半導体ペレット主面に対してダメージを与える
ことがなくなり、また耐湿性向上をはかることができる
。
したがって、本発明によれば、高信頼度のプラスチック
封止型半導体装置を得ることができる。
〔実施例〕
以下、実施例にもとづいて本発明の詳細な説明する。
まず、第１図に示すように通常のプロセスによりシリコ
ンからなる半導体基板ｌの主面に半導体素子領域（図示
せず）を形成し、５ｉＯｚ膜等の絶縁膜を介して素子領
域間の電気的接続用ＡＱ配線３及び外部との電気的接続
のためのＡＱ電極パッド２を形成する。このようにして
形成された半導体素子表面に、ピロリドン溶媒の１５％
濃度のポリイミドワニスをスピンナで塗布し、１００℃
　３０分、２００℃　３０分、３５０℃　３０分窒素雰
囲気中でベークし、重合反応させ、約２μｍの厚さのポ
リイミド被膜４を形成する。この後、外部との電気的接
続用バット部２及びスクライブライン部ＩＯのポリイミ
ド被膜４をホトエツチング技術により除去する。エツチ
ングはヒドラジンヒトラードを用い、３０℃で約１５分
である。この工程によりパッド部２及びスライプライン
部１０以外はポリイミド被膜４で覆われた構造を得る。
このように形成された半導体装置を上記スクライブライ
ン部に沿ってスクライブし個々のペレット（小片）に分
割し、第２図に示すようにリードフレームのタブ６上に
金（Ａｕ）箔５を用い金−Ｓｔ共品にて固定し、その後
外部との電気的接続のため通常のワイヤボンディング法
によりパッド２とフレームのリード端子７間をＡｕ線等
のコネクタワイヤ８で接続する。
こののち、例えば水性ディスパージョンタイプの４フッ
化エチレン−６フツ化プロピレン共重合を、上記のよう
に組立てられた半導体装置上に塗布し、１００°Ｃ３０
分、３００℃　３０分窒素雰囲気中でベータし、被膜９
を形成する。この被膜厚さは前記ポリイミド被膜４の厚
さの１０倍以上とすることが望ましく、具体的には１０
μｍ以上とするのが望ましい。特にワイヤボンディング
した後の塗布により被覆するためこの被膜は容易に厚く
形成される。
その後は通常の方法により点線１３で示すようにモール
ド樹脂体によりリードフレームのリード先端部、タブ部
、ワイヤ及び半導体素子部を一体にプラスチック封止し
、本発明による半導体装置が形成される。
ポリイミド上に塗布することにより同様の効果が得られ
るフッ素系樹脂として、４フツ化エチレン樹脂、４フッ
化エチレン−エチレン共重合樹脂、４フッ化エチレン−
パーフロロアルキルビニルエーテル共重合樹脂などがあ
る。これらはいずれもポリマー分子の構成要素としてフ
ッ素を含有するポリマーである。
〔発明の効果〕
本発明によりフッ素系樹脂のもつ非吸湿性及びポリイミ
ドとの接着性が良好のため、各被膜間のはがれの問題を
なくし、外部から、半導体基板上の金属配線への水分の
侵入速度を遅らせ、半導体装置の耐湿信頼性を向上させ
ることができる。
本発明の耐湿信頼性に対する効果を第３図に示す。同図
よりプレッシャクツキング（ＨｌＯガス圧２２気圧、温
度１２０℃）による強制劣化試験による不良発生は従来
技術により作成したもの（曲線Ｉｆ）より本発明適用品
（曲線１２）の方が明らかにすぐれていることがわかる
。
なお、本願発明の効果は特に耐湿性を問題とするプラス
チック封止型の半導体装置に適用してその効果が大きい
。
【図面の簡単な説明】
第１図は、半導体素子の保護膜としてポリイミド被膜を
有する半導体素子要部の断面図である。 第２図は、本発明に係る半導体装置を説明するための要
部断面図である。 第３図は、従来品及び本発明適用品とのプレッシャクツ
キング耐湿試験の結果を示す特性図であ１・・・半導体
基板、２・・・電極（ボンディングパッド）、３・・・
配線、４・・・ポリイミド被膜、訃・・Ａｕ−８ｉ共晶
、６・・・タブ部、７・・・リード部、８・・・コネク
ティンクワイヤ、９・・・フッ素系樹脂被膜、Ｉ３・・
・モールド樹脂体。

Claims (1)

  1. 【特許請求の範囲】 １、ウェーハ状態にある半導体基体主面にボンディング
    パッドを形成する工程と、 そのボンディングパットを露出するように上記半導体基
    体主面上にポリイミド系有機被膜を形成する工程と、 上記半導体基体を複数の半導体ペレットに分割する工程
    と、 タブ部およびリード部を有するリードフレームを準備し
    、そのタブ部に上記半導体ペレットを取り付ける工程と
    、 上記半導体ペレット主面のボンディングパッドとリード
    部とをコネクタワイヤで接続する工程と、しかる後、上
    記半導体ペレット主面に樹脂被膜を形成する工程と、 上記半導体ペレットをプラスチック封止する工程と、 からなることを特徴とする半導体装置の製法。
JP61082001A 1986-04-11 1986-04-11 半導体装置の製法 Pending JPS621236A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61082001A JPS621236A (ja) 1986-04-11 1986-04-11 半導体装置の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61082001A JPS621236A (ja) 1986-04-11 1986-04-11 半導体装置の製法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP7468079A Division JPS55166942A (en) 1979-06-15 1979-06-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS621236A true JPS621236A (ja) 1987-01-07

Family

ID=13762260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61082001A Pending JPS621236A (ja) 1986-04-11 1986-04-11 半導体装置の製法

Country Status (1)

Country Link
JP (1) JPS621236A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104615A (ja) * 1992-05-07 1994-04-15 Hughes Aircraft Co モールドされた導波管部品

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147962A (en) * 1975-06-02 1976-12-18 Fairchild Camera Instr Co Method of mounting semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147962A (en) * 1975-06-02 1976-12-18 Fairchild Camera Instr Co Method of mounting semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104615A (ja) * 1992-05-07 1994-04-15 Hughes Aircraft Co モールドされた導波管部品

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