JPS62123094A - ３―５属化合物半導体気相成長用サセプタ - Google Patents
３―５属化合物半導体気相成長用サセプタInfo
- Publication number
- JPS62123094A JPS62123094A JP26136985A JP26136985A JPS62123094A JP S62123094 A JPS62123094 A JP S62123094A JP 26136985 A JP26136985 A JP 26136985A JP 26136985 A JP26136985 A JP 26136985A JP S62123094 A JPS62123094 A JP S62123094A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- atn
- film
- semiconductor
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 5
- 239000012808 vapor phase Substances 0.000 claims abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 abstract description 18
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 11
- 239000012535 impurity Substances 0.000 abstract description 10
- 238000011109 contamination Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 7
- 239000002994 raw material Substances 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- -1 aluminum halide Chemical class 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 239000011247 coating layer Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MGDOJPNDRJNJBK-UHFFFAOYSA-N ethylaluminum Chemical compound [Al].C[CH2] MGDOJPNDRJNJBK-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26136985A JPS62123094A (ja) | 1985-11-22 | 1985-11-22 | ３―５属化合物半導体気相成長用サセプタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26136985A JPS62123094A (ja) | 1985-11-22 | 1985-11-22 | ３―５属化合物半導体気相成長用サセプタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62123094A true JPS62123094A (ja) | 1987-06-04 |
| JPH0566919B2 JPH0566919B2 (enrdf_load_stackoverflow) | 1993-09-22 |
Family
ID=17360881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26136985A Granted JPS62123094A (ja) | 1985-11-22 | 1985-11-22 | ３―５属化合物半導体気相成長用サセプタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62123094A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05251365A (ja) * | 1991-05-28 | 1993-09-28 | Ngk Insulators Ltd | 耐蝕性部材 |
| JPH06163428A (ja) * | 1992-11-26 | 1994-06-10 | Ngk Insulators Ltd | 耐蝕性部材 |
| NL1015550C2 (nl) * | 2000-06-28 | 2002-01-02 | Xycarb Ceramics B V | Werkwijze voor het vervaardigen van een uit een kern opgebouwde susceptor, aldus verkregen susceptor en een werkwijze voor het aanbrengen van actieve lagen op een halfgeleidersubstraat onder toepassing van een dergelijke susceptor. |
| US8247080B2 (en) | 2004-07-07 | 2012-08-21 | Momentive Performance Materials Inc. | Coating structure and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5392338A (en) * | 1976-12-28 | 1978-08-14 | Suwa Seikosha Kk | Sheath parts for portable watch |
| JPS54157778A (en) * | 1978-06-02 | 1979-12-12 | Toshiba Ceramics Co | Susceptor |
| JPS56158866A (en) * | 1980-05-09 | 1981-12-07 | Toshiba Corp | Structural material for use at high temperature |
| JPS60216536A (ja) * | 1984-04-12 | 1985-10-30 | Nippon Telegr & Teleph Corp <Ntt> | 基板載置台 |
-
1985
- 1985-11-22 JP JP26136985A patent/JPS62123094A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5392338A (en) * | 1976-12-28 | 1978-08-14 | Suwa Seikosha Kk | Sheath parts for portable watch |
| JPS54157778A (en) * | 1978-06-02 | 1979-12-12 | Toshiba Ceramics Co | Susceptor |
| JPS56158866A (en) * | 1980-05-09 | 1981-12-07 | Toshiba Corp | Structural material for use at high temperature |
| JPS60216536A (ja) * | 1984-04-12 | 1985-10-30 | Nippon Telegr & Teleph Corp <Ntt> | 基板載置台 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05251365A (ja) * | 1991-05-28 | 1993-09-28 | Ngk Insulators Ltd | 耐蝕性部材 |
| JPH06163428A (ja) * | 1992-11-26 | 1994-06-10 | Ngk Insulators Ltd | 耐蝕性部材 |
| NL1015550C2 (nl) * | 2000-06-28 | 2002-01-02 | Xycarb Ceramics B V | Werkwijze voor het vervaardigen van een uit een kern opgebouwde susceptor, aldus verkregen susceptor en een werkwijze voor het aanbrengen van actieve lagen op een halfgeleidersubstraat onder toepassing van een dergelijke susceptor. |
| WO2002000968A1 (en) * | 2000-06-28 | 2002-01-03 | Xycarb Ceramics B.V. | A method for manufacturing a susceptor, a susceptor thus obtained and its application |
| US8247080B2 (en) | 2004-07-07 | 2012-08-21 | Momentive Performance Materials Inc. | Coating structure and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0566919B2 (enrdf_load_stackoverflow) | 1993-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3707726B2 (ja) | 炭化珪素の製造方法、複合材料の製造方法 | |
| EP0632145B1 (en) | Method of forming crystalline silicon carbide coatings | |
| Kouvetakis et al. | Chemical vapor deposition of gallium nitride from diethylgallium azide | |
| US11047041B2 (en) | Method and system for preparing polycrystalline group III metal nitride | |
| Takahashi et al. | Low‐temperature growth of 3 C‐SiC on Si substrate by chemical vapor deposition using hexamethyldisilane as a source material | |
| JP3239622B2 (ja) | 半導体薄膜の形成方法 | |
| US5471946A (en) | Method for producing a wafer with a monocrystalline silicon carbide layer | |
| US20180209063A1 (en) | Growing epitaxial 3c-sic on single-crystal silicon | |
| JPH01162326A (ja) | β−炭化シリコン層の製造方法 | |
| US6254675B1 (en) | Production of epitactic GaN layers on substrates | |
| Ho et al. | MOVPE of AlN and GaN by using novel precursors | |
| US6911084B2 (en) | Low temperature epitaxial growth of quaternary wide bandgap semiconductors | |
| JPH01313927A (ja) | 化合物半導体結晶成長方法 | |
| Tischler et al. | Growth and characterization of compound semiconductors by atomic layer epitaxy | |
| JP2009543946A (ja) | ワイドバンドギャップ半導体材料 | |
| JP4733882B2 (ja) | 炭化珪素単結晶及びその製造方法並びに炭化珪素単結晶育成用炭化珪素結晶原料 | |
| JPH04175294A (ja) | 気相成長装置 | |
| Cheng et al. | Effect of annealing atmosphere (CO and N2 gas flow) on surface morphology and crystal quality of AlN buffer layer | |
| Fu et al. | Residual stress in GaN epilayers grown on silicon substrates | |
| JPS62123094A (ja) | ３―５属化合物半導体気相成長用サセプタ | |
| KR20060131921A (ko) | 서셉터 | |
| JPH1012554A (ja) | 化合物半導体の製造方法 | |
| Nagasawa et al. | Mechanisms of SiC growth by alternate supply of SiH2Cl2 and C2H2 | |
| JPH0754802B2 (ja) | ＧａＡｓ薄膜の気相成長法 | |
| JPH0380198A (ja) | 窒素化合物半導体単結晶膜の成長方法 |