JPS62122361U - - Google Patents
Info
- Publication number
- JPS62122361U JPS62122361U JP902786U JP902786U JPS62122361U JP S62122361 U JPS62122361 U JP S62122361U JP 902786 U JP902786 U JP 902786U JP 902786 U JP902786 U JP 902786U JP S62122361 U JPS62122361 U JP S62122361U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- refractive index
- semiconductor
- heterojunction bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000005693 optoelectronics Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP902786U JPS62122361U (enExample) | 1986-01-24 | 1986-01-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP902786U JPS62122361U (enExample) | 1986-01-24 | 1986-01-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62122361U true JPS62122361U (enExample) | 1987-08-03 |
Family
ID=30793952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP902786U Pending JPS62122361U (enExample) | 1986-01-24 | 1986-01-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62122361U (enExample) |
-
1986
- 1986-01-24 JP JP902786U patent/JPS62122361U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4730329A (en) | Semiconductor laser device | |
| JPS62122361U (enExample) | ||
| JPS6243357B2 (enExample) | ||
| JP3623638B2 (ja) | 光半導体素子及びその製造方法 | |
| JPS61230388A (ja) | 埋込型半導体レ−ザ | |
| JPH02138456U (enExample) | ||
| JPS61100160U (enExample) | ||
| JPH01140865U (enExample) | ||
| JPS6450461U (enExample) | ||
| JPH01103893A (ja) | 半導体レーザ装置 | |
| JPS62199969U (enExample) | ||
| JPS6186962U (enExample) | ||
| JPH0247067U (enExample) | ||
| JPS58142957U (ja) | 半導体レ−ザ素子 | |
| JPS58116259U (ja) | 半導体レ−ザ | |
| JPH01108958U (enExample) | ||
| JPH0345677U (enExample) | ||
| KR960002987A (ko) | 레이저 다이오드 및 그 제조방법 | |
| JPS61156258U (enExample) | ||
| JPS6364069U (enExample) | ||
| JPH01123482A (ja) | 半導体発光装置 | |
| JPH0328770U (enExample) | ||
| JPH01156574U (enExample) | ||
| JPH0446476B2 (enExample) | ||
| KR940027236A (ko) | 반도체 레이져 소자 |