JPS62119190A - 単結晶の直径制御方法および装置 - Google Patents

単結晶の直径制御方法および装置

Info

Publication number
JPS62119190A
JPS62119190A JP25597385A JP25597385A JPS62119190A JP S62119190 A JPS62119190 A JP S62119190A JP 25597385 A JP25597385 A JP 25597385A JP 25597385 A JP25597385 A JP 25597385A JP S62119190 A JPS62119190 A JP S62119190A
Authority
JP
Japan
Prior art keywords
diameter
single crystal
amount
calculating
optical means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25597385A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0565478B1 (enExample
Inventor
Haruo Yamamura
山村　春夫
Hiroshi Ichikawa
洋 市川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KYUSHU DENSHI KINZOKU KK
Osaka Titanium Co Ltd
Original Assignee
KYUSHU DENSHI KINZOKU KK
Osaka Titanium Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KYUSHU DENSHI KINZOKU KK, Osaka Titanium Co Ltd filed Critical KYUSHU DENSHI KINZOKU KK
Priority to JP25597385A priority Critical patent/JPS62119190A/ja
Publication of JPS62119190A publication Critical patent/JPS62119190A/ja
Publication of JPH0565478B1 publication Critical patent/JPH0565478B1/ja
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP25597385A 1985-11-14 1985-11-14 単結晶の直径制御方法および装置 Pending JPS62119190A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25597385A JPS62119190A (ja) 1985-11-14 1985-11-14 単結晶の直径制御方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25597385A JPS62119190A (ja) 1985-11-14 1985-11-14 単結晶の直径制御方法および装置

Publications (2)

Publication Number Publication Date
JPS62119190A true JPS62119190A (ja) 1987-05-30
JPH0565478B1 JPH0565478B1 (enExample) 1993-09-17

Family

ID=17286140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25597385A Pending JPS62119190A (ja) 1985-11-14 1985-11-14 単結晶の直径制御方法および装置

Country Status (1)

Country Link
JP (1) JPS62119190A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02164789A (ja) * 1988-12-16 1990-06-25 Komatsu Denshi Kinzoku Kk 単結晶直径自動制御装置
JPH0668799U (ja) * 1993-03-11 1994-09-27 株式会社丸正 しゃぼん玉発生玩具
JP2006044972A (ja) * 2004-08-03 2006-02-16 Sumco Corp シリコン単結晶製造装置及び製造方法並びにシリコン単結晶
EP4563732A1 (de) * 2023-11-30 2025-06-04 Siltronic AG Verfahren und vorrichtung zur herstellung eines kristallstabs unter verminderter pendelauslenkung während des ziehprozesses

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02164789A (ja) * 1988-12-16 1990-06-25 Komatsu Denshi Kinzoku Kk 単結晶直径自動制御装置
JPH0668799U (ja) * 1993-03-11 1994-09-27 株式会社丸正 しゃぼん玉発生玩具
JP2006044972A (ja) * 2004-08-03 2006-02-16 Sumco Corp シリコン単結晶製造装置及び製造方法並びにシリコン単結晶
EP4563732A1 (de) * 2023-11-30 2025-06-04 Siltronic AG Verfahren und vorrichtung zur herstellung eines kristallstabs unter verminderter pendelauslenkung während des ziehprozesses
WO2025113919A1 (de) * 2023-11-30 2025-06-05 Siltronic Ag Verfahren und vorrichtung zur herstellung eines kristallstabs unter verminderter pendelauslenkung während des ziehprozesses

Also Published As

Publication number Publication date
JPH0565478B1 (enExample) 1993-09-17

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