JPS6211506B2 - - Google Patents
Info
- Publication number
- JPS6211506B2 JPS6211506B2 JP8821779A JP8821779A JPS6211506B2 JP S6211506 B2 JPS6211506 B2 JP S6211506B2 JP 8821779 A JP8821779 A JP 8821779A JP 8821779 A JP8821779 A JP 8821779A JP S6211506 B2 JPS6211506 B2 JP S6211506B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- channel stopper
- integrated circuit
- semiconductor integrated
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005685 electric field effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8821779A JPS5613746A (en) | 1979-07-13 | 1979-07-13 | High pressure resisting semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8821779A JPS5613746A (en) | 1979-07-13 | 1979-07-13 | High pressure resisting semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5613746A JPS5613746A (en) | 1981-02-10 |
| JPS6211506B2 true JPS6211506B2 (en, 2012) | 1987-03-12 |
Family
ID=13936720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8821779A Granted JPS5613746A (en) | 1979-07-13 | 1979-07-13 | High pressure resisting semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5613746A (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0624206B2 (ja) * | 1985-07-06 | 1994-03-30 | 株式会社日立製作所 | 半導体集積回路装置 |
-
1979
- 1979-07-13 JP JP8821779A patent/JPS5613746A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5613746A (en) | 1981-02-10 |
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