JPS62114225A - Resist developing device - Google Patents

Abstract

PURPOSE:To prevent a pattern defect due to adherence of adherence preventing agent from occurring when a contact exposure is executed with a negative resist by providing a processing solution spraying nozzle for removing the agent adhered to the resist, a developer spraying nozzle and a rinse solution spraying nozzle. CONSTITUTION:A processing solution spraying nozzle 11, a developer spraying nozzle 6 and a rinse solution spraying nozzle 7 are provided above a semiconductor wafer 5. A processing solution for removing an adherence preventing agent (FC solution) such as Freon is sprayed from the nozzle 11. Since the agent can be completely removed by spraying the processing solution before developing, it can prevent the agent from remaining except a resist pattern after developing. Accordingly, a pattern defect can be eliminated even in an etching step to obtain a desired circuit pattern.

Description

[Detailed description of the invention] [Technical field of invention] The present invention relates to improvements in resist developing devices.

[Technical Background of the Invention] A conventional spray resist development apparatus will be described with reference to FIGS. 2(a) and 2(b). In FIGS. 2A and 2B, a motor 2 is provided below the cup 1, and a rotating shaft 3 rotated by the motor 2 is inserted into the cup 1. A wafer chuck 4 is mounted on the rotating shaft 3, and a semiconductor wafer 5 is further fixed on the wafer chuck 4. Furthermore, a developer spray nozzle 6 and a rinse solution spray nozzle 7 are provided above the semiconductor wafer 5 . Ducts 1a and la are provided at the bottom of the cup 1.
The ducts 1a and 1a are used to exhaust air and to collect the developing solution and the rinsing solution.

[Problems with background technology]

By the way, in a semiconductor manufacturing process, a negative resist is sometimes used to form a resist pattern by a contact exposure method. In this case, since the mask and the wafer are brought into contact during mask alignment, so-called sticking, in which the two adhere to each other and cannot be separated, tends to occur. When such sticking occurs, problems such as a decrease in work efficiency, dirt on the mask, and a decrease in product yield occur.

Therefore, as a countermeasure against this sticking, ■ a method of coating the mask with an anti-adhesion agent (FC liquid, product name of Sumitomo 3M Co., Ltd.); ■ a method of coating the resist with an anti-adhesion agent (OPS, product name of Tokyo Ohkako Co., Ltd.); Methods such as using a resist with low adhesion are used.

Among these countermeasures, the method (2) has a problem in that the difference in pattern conversion becomes large, and the method (2) has a problem in that the adhesion between the wafer and the low-adhesion resist decreases.

For this reason, usually only method ■ is used, or both method
This method is also used. However, even with method (2), the anti-adhesion agent (FC liquid) coated on the mask may adhere to the resist, and the anti-adhesion agent may not be removed and remain even after the resist is diluted. The problem is that a pattern is not formed and defects occur. For example, as shown in FIG. 3(a), if the anti-adhesion agent 9 remains between the resist patterns 8 and 8,
), for example, the wirings 10 and 10 are formed in a connected state after etching, which causes a short circuit failure.

When such defects occur, the yield of IC products is significantly reduced.

[Purpose of the invention]

The present invention has been made in order to eliminate the above-mentioned drawbacks, and it is an object of the present invention to provide a resist phenomenon device that can prevent pattern defects caused by adhesion of anti-slip agent when contact exposure is performed using a negative resist. That is.

[Summary of the invention]

The resist developing device of the present invention is characterized by comprising a processing liquid spray nozzle for removing an anti-adhesion agent adhering to the resist, a developer spray nozzle, and a rinse liquid spray nozzle.

According to such a resist developing device, the anti-adhesion agent can be completely removed by the treatment liquid sprayed from the treatment liquid spray nozzle, so pattern defects can be prevented and the yield of IC products can be improved. can be improved. In the present invention, Freon, for example, is used as a treatment liquid for removing the anti-adhesion agent.

(Embodiments of the Invention) Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1(a> and (b)).

In FIGS. 1(a) and 1(b), a motor 2 is provided below the cup 1, and a rotating shaft 3 rotated by the motor 2 is inserted into the cup 1. A wafer chuck 4 is mounted on the rotating shaft 3, and a semiconductor wafer 5 is further fixed on the wafer chuck 4. Further, above the semiconductor wafer 5, a processing liquid spray nozzle 11, a developer liquid spray nozzle 6, and a rinse liquid spray nozzle 7 are provided. The treatment liquid spray nozzle 11 sprays a treatment liquid for removing an anti-adhesion agent (FC liquid), for example Freon. Ducts 1a, 1a are provided at the bottom of the cup 1, and these ducts 1-1a, la
At the same time, the processing liquid, developer, and rinse liquid are recovered.

The operation sequence of the above-mentioned resist/developing device is as follows. For example, spray Freon for 10 seconds at a wafer rotation speed of 1100 Orp;
0rl) for 10 seconds, a rinsing liquid for 10 seconds at a wafer rotation speed of 1000 rpm, and drying for 10 seconds at a wafer rotation speed of 4000 rpm+.

According to such a resist development @ device, the anti-adhesion agent can be completely removed by spraying a processing liquid before development, thereby preventing the anti-adhesion agent from remaining on areas other than the resist pattern after development. be able to. Therefore, a desired circuit pattern can be obtained without causing pattern defects even in the etching process, so that the yield of IC products can be improved.

〔Effect of the invention〕

As detailed above, according to the resist developing device of the present invention,
When contact exposure is performed using a negative resist, pattern defects due to adhesion of the anti-adhesion agent can be prevented, and the yield of 101 products can be greatly improved.

[Brief explanation of drawings]

FIG. 1(a) is a front view of a resist developing device in an embodiment of the present invention, FIG. 1(b) is a plan view of the same device, and FIG.
) is a front view of a conventional resist developing device, FIG. 3(b) is a plan view of the same device, and FIGS. be. 1... Cup, 1a... Duct, 2... Motor, 3... Rotating shaft, 4... Wafer chuck, 5...
Semiconductor wafer, 6...Developer spray nozzle, 7...
・Rinse liquid spray nozzle, 8... Resist pattern, 9... Anti-adhesion agent, 10... Wiring, 11... Treatment liquid spray nozzle Applicant's representative Patent attorney Takehiko Suzue Figure 1

Claims (1)

[Claims] A processing liquid spray nozzle for removing an anti-adhesion agent adhering to the resist in a resist developing device that develops the resist coated on the substrate and after the exposure process has been completed;
A resist developing device comprising a developer spray nozzle and a rinse solution spray nozzle.