JPS6211393A - Probe substrate for testing solid-state image pickup device - Google Patents
Probe substrate for testing solid-state image pickup deviceInfo
- Publication number
- JPS6211393A JPS6211393A JP60150978A JP15097885A JPS6211393A JP S6211393 A JPS6211393 A JP S6211393A JP 60150978 A JP60150978 A JP 60150978A JP 15097885 A JP15097885 A JP 15097885A JP S6211393 A JPS6211393 A JP S6211393A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photoelectric element
- window
- solid
- probe substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000523 sample Substances 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- 238000012360 testing method Methods 0.000 title claims description 20
- 238000003384 imaging method Methods 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229920005989 resin Polymers 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
- 241001422033 Thestylus Species 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Testing, Inspecting, Measuring Of Stereoscopic Televisions And Televisions (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の技術分野〕
本発明はウェーハ上に多数の光電素子が形成された固体
撮像装置の特性を試験するプローブ基板に関するもので
、特にＣＣＤイメージセンサ等の検査に使用されるもの
である。[Detailed Description of the Invention] (Technical Field of the Invention) The present invention relates to a probe substrate for testing the characteristics of a solid-state imaging device in which a large number of photoelectric elements are formed on a wafer, and is particularly used for testing CCD image sensors and the like. It is something that will be done.
ＣＣＤイメージセンサ等の固体撮像装置はビデオカメラ
、ファクシミリ等に多用されているが、この特性検査に
おいては感光部に光を照射し、この光が光電変換された
出力信号をチェックするようにしている。Solid-state imaging devices such as CCD image sensors are often used in video cameras, facsimiles, etc., and in this characteristic test, light is irradiated onto the photosensitive area and the output signal obtained by photoelectrically converting this light is checked. .
この特性検査を行うために複数の電極部に対応ザる複数
の試験針を当接させると共に試験対象光電素子に選択的
に光を照射する窓を有する試験用プローブ基板が用いら
れる。In order to perform this characteristic test, a test probe board is used which has a plurality of test needles in contact with a plurality of electrode parts and a window which selectively irradiates light onto the photoelectric element to be tested.
第３図はこのようなプローブ基板を用いて固体撮像装置
の試験を行う様子を示す平面図、第４図はその■−■線
断面図を示している。被試験板であるウェーハ１上面の
素子形成領域２にはリニアセンサ等の光電素子３が光電
素子列４として多数形成されており、このウェーハ１上
方にプローブ基板１０がセットされている。FIG. 3 is a plan view showing how a solid-state imaging device is tested using such a probe board, and FIG. 4 is a cross-sectional view taken along the line ■--■. A large number of photoelectric elements 3 such as linear sensors are formed as a photoelectric element array 4 in an element formation area 2 on the upper surface of a wafer 1, which is a board to be tested, and a probe substrate 10 is set above the wafer 1.
ここで示した固体撮像素子はファクシミリ装置等に使用
されるリニアセンサであって、例えば３０×１−のよう
に−軸方向に長い光電素子列を有して、おり、ウェーハ
上にはこのような光電素子列が多数形成されている。The solid-state image sensor shown here is a linear sensor used in facsimile machines, etc., and has a long photoelectric element row in the -axial direction, for example, 30 x 1-. A large number of photoelectric element arrays are formed.
このプローブ基板に１０は光源装置（図示せず）からの
光を通過させて光電素子の感光部に光りを照射する入光
窓１１および下面には光電素子３の電極に接して信号の
授受を行う複数のコンタクト針１２が設けられている。On this probe board, there is a light entrance window 11 that allows light from a light source device (not shown) to pass through and irradiates the photosensitive area of the photoelectric element, and a lower surface that contacts the electrodes of the photoelectric element 3 to transmit and receive signals. A plurality of contact needles 12 are provided.
コンタクト針は入光窓の端部においてエポキシ樹脂等で
固定されそこから斜め下方に延出した片持ち梁となって
おりその弾性により電極との確実な接触が図られるよう
になっている。この例における固体撮像装置では電極部
が集中しているためコンタクト針も入光窓１１の端部に
集中して設けられている。このコンタクト針で取出され
た電気信号を引出すためプローブ基板１０の下面１ａに
は金メタライズ等よりなる配線パターン（図示じず）が
形成されている。The contact needle is fixed with epoxy resin or the like at the end of the light entrance window, and forms a cantilever extending diagonally downward from there, and its elasticity ensures reliable contact with the electrode. In the solid-state imaging device in this example, since the electrode portions are concentrated, the contact needles are also concentrated at the end of the light entrance window 11. A wiring pattern (not shown) made of gold metallization or the like is formed on the lower surface 1a of the probe substrate 10 in order to extract the electrical signals taken out by the contact needles.
また、光源装置はランプ等から発生した光をマスクを用
いて絞り平行光とするもので光電素子の配列方向に均一
な照度分布を有する光りを発生する。 試験に際しては
、ウェーハは前後、左右および上下に移動可能なステー
ジ上にゼットされ、所定の位置決めを行った後、ステー
ジが上昇してコンタクト針が光電素子列の電極に接触す
る。そして、光源装置から光電素子の配列方向に均一な
照度分布を持つ光りを発し、入光窓から光電素子に照射
することによって行っている。Further, the light source device uses a mask to aperture and collimate light generated from a lamp or the like, and generates light having a uniform illuminance distribution in the direction in which the photoelectric elements are arranged. During testing, the wafer is placed on a stage that can be moved back and forth, left and right, and up and down. After a predetermined positioning, the stage is raised and the contact needles come into contact with the electrodes of the photoelectric element array. This is accomplished by emitting light with a uniform illuminance distribution in the direction in which the photoelectric elements are arranged from the light source device, and irradiating the photoelectric elements from the light entrance window.
しかしながら、この従来例のプローブ基板１０にあって
は、第４図の１１ 、Ｌ２で示すように光源装置からウ
ェーハ１上に入射した光が、ウェー八表面およびプロー
ブ基板１下面の間で乱反射し、その反射光が検査対象の
光電素子２に再入射する。However, in the probe substrate 10 of this conventional example, the light incident on the wafer 1 from the light source device is diffusely reflected between the wafer surface and the lower surface of the probe substrate 1, as shown by 11 and L2 in FIG. , the reflected light re-enters the photoelectric element 2 to be inspected.
特に、プローブ基板１下面には、反射率の高い引出し導
体パターンが形成されているため場所によって反射率に
差が生じ、これにより反射された光が光電索子の感光部
に入射するため、入射光の照度分布に不均一を生じる。In particular, on the bottom surface of the probe board 1, a lead-out conductor pattern with a high reflectance is formed, so the reflectance varies depending on the location, and as a result, the reflected light enters the photosensitive part of the photoconductor. This causes non-uniformity in the illuminance distribution of light.
このため、光感度および感度均一性に悪影響を及ぼし、
高精度の特性検査ができず本来良品であるはずの固体撮
像装置が不良品となってしまうという問題がある。This adversely affects photosensitivity and sensitivity uniformity,
There is a problem in that a solid-state imaging device that is supposed to be a good product ends up being a defective product because highly accurate characteristic inspection cannot be performed.
本発明は上記事情を考慮してなされたもので、プローブ
基板下面における光の乱反射を防止して光電索子に照射
される光の照度を均一にした固体撮像装置の試験用プロ
ーブ基板を提供することを目的としている。The present invention has been made in consideration of the above circumstances, and provides a probe board for testing a solid-state imaging device that prevents diffuse reflection of light on the lower surface of the probe board and uniformizes the illuminance of the light irradiated to the photoelectron. The purpose is to
上記目的達成のため、本発明による固体撮像装置の試験
用プローブ基板は、照射された光が乱反射をする可能性
のある入光窓および下面部分に反射光を吸収する非導電
性の反射防止膜を被覆したことを特徴としている。この
ため入射光の照度分布が均一化され試験精度が向上する
。In order to achieve the above object, the test probe board for a solid-state imaging device according to the present invention includes a non-conductive anti-reflection film that absorbs reflected light on the light entrance window and the lower surface portion where the irradiated light may be diffusely reflected. It is characterized by being coated with. Therefore, the illuminance distribution of the incident light is made uniform and the test accuracy is improved.
以下、本発明による固体撮像装置の試験用プローブ基板
を第１図および第２図を参照して具体的に説明する。な
お被試験ウェーハについては従来例と全く同じであるの
でその説明を省略する。Hereinafter, a test probe board for a solid-state imaging device according to the present invention will be specifically described with reference to FIGS. 1 and 2. Note that the wafer to be tested is exactly the same as in the conventional example, so a description thereof will be omitted.
第１図は本発明の一実施例の平面図、第２図はそのＩ−
Ｉ線断面図である。円板状のプローブ基板２０には矩形
の入光窓２１が形成されており、この入光窓は光源装置
（図示せず）からの光を検査対象の光電素子３の感光部
に照射するのに十分な長さを有するように所定の長さお
よび幅でプローブ基板２０に開口されている。この入光
窓２１の端部には複数のコンタクト針２２が集中して設
けられており、このコンタクト針は片持ち梁となってい
る。またプローブ基板２０に下面にはコンタクト針で取
出された電気信号を引出すため銅箔等による配線パター
ンが形成されている。Fig. 1 is a plan view of one embodiment of the present invention, and Fig. 2 is its I-
It is an I line sectional view. A rectangular light entrance window 21 is formed in the disk-shaped probe board 20, and this light entrance window irradiates light from a light source device (not shown) onto the photosensitive portion of the photoelectric element 3 to be inspected. The opening is opened in the probe substrate 20 with a predetermined length and width so as to have a sufficient length. A plurality of contact needles 22 are provided in a concentrated manner at the end of the light entrance window 21, and the contact needles are cantilevered. Further, a wiring pattern made of copper foil or the like is formed on the lower surface of the probe board 20 in order to draw out the electrical signals taken out by the contact needles.
このようなプローブ基板２０においては、下面２０ａお
よび照射光が入射する入光窓２１の内壁２１ａ、さらに
は、入光窓２１周囲の基板上面には反射防止膜２３が被
覆されている。またコンタクト針固定部ではコンタクト
針を固定している樹脂上に被覆される。In such a probe substrate 20, an antireflection film 23 is coated on the lower surface 20a, the inner wall 21a of the light entrance window 21 through which the irradiation light enters, and the upper surface of the substrate around the light entrance window 21. Further, in the contact needle fixing portion, the resin fixing the contact needle is coated.
このような反射防止膜２３としては非導電性で大ぎな光
吸収率を有する黒色膜、例えば炭素系の粒子を絶縁性樹
脂で被覆したものを含む樹脂等をスプレー等で被覆した
ものが使用される。As such an anti-reflection film 23, a black film that is non-conductive and has a large light absorption rate, for example, a film coated with a resin containing carbon-based particles coated with an insulating resin, etc., by spraying or the like is used. Ru.
この反射防止膜２３は入光窓４を通過してウェーハ１上
に達しウェーハ１上の光電素子３で乱反射した光Ｌ３が
当たると、その反射光を吸収する性質を有している。This anti-reflection film 23 has a property of absorbing the reflected light when it hits the light L3 that passes through the light entrance window 4 and reaches the wafer 1 and is diffusely reflected by the photoelectric element 3 on the wafer 1.
次に本発明の作用について述べる。Next, the operation of the present invention will be described.
ウェーハ１が上下、左右および前後方向に移動調整可能
なステージ（図示せず）上にセットされると、ステージ
の移動により検査対象の光電素子列４が入光窓２１内に
はいりコンタクト針２２が引出し電極部に当接する。When the wafer 1 is set on a stage (not shown) that can be moved up and down, left and right, and back and forth, the photoelectric element array 4 to be inspected enters the light entrance window 21 and the contact needle 22 moves. It comes into contact with the extraction electrode part.
光源装置（図示せず）から光りが入光窓４を通して固体
撮像装置の光電素子感光部に入射すると、その表面で反
射した光Ｌ３が生じるがこの光Ｌ３はプローブ基板２０
裏面の反射防止ｒｐｊ！２３により吸収され、ざらに固
体撮像装置側に再反射することはない。したがって各光
電素子には光源から発せられた光のみが当たることにな
る。When light from a light source device (not shown) enters the photosensitive part of the photoelectric element of the solid-state imaging device through the light entrance window 4, light L3 is reflected from the surface of the solid-state imaging device, and this light L3 is reflected by the probe board 20.
Anti-reflection rpj on the back! 23 and is not reflected again toward the solid-state imaging device. Therefore, each photoelectric element is exposed to only the light emitted from the light source.
このような反射防止膜を施したプローブ基板を使用して
感度均一性テストを行ったところ、反射防止膜がない場
合には４〜５％のばらつきがあったものがほぼ０となり
光電素子に入射する光の均一性が向上したことがわかる
。これにより従来良品でありながら不良品とされていた
ちのが救済され歩留りが５％程度向上する。When we conducted a sensitivity uniformity test using a probe substrate coated with such an anti-reflection film, we found that the variation of 4 to 5% without the anti-reflection film became almost 0, and the variation that entered the photoelectric element became almost zero. It can be seen that the uniformity of the light has improved. As a result, products that were conventionally considered to be defective even though they were good are rescued, and the yield is improved by about 5%.
なお、本発明においては、反射防止膜は少なくとも入射
光が乱反射する部分に被覆すればよく、プローブ基板の
上面には被覆しないでプローブ基板の下面および入光窓
の内壁のみであってもよい。In the present invention, the antireflection film may be applied only to at least the portion where incident light is diffusely reflected, and may be applied only to the lower surface of the probe substrate and the inner wall of the light entrance window without covering the upper surface of the probe substrate.
また、反射防止膜の色は黒色でなくても暗褐色。Also, the color of the anti-reflective film is not black but dark brown.
暗灰色等の膜であってもよい。さらに炭素以外の粒子を
含む絶縁膜を使用することもできる。The film may be dark gray or the like. Furthermore, an insulating film containing particles other than carbon can also be used.
以上のように本発明によれば、被試験基板とプローブ基
板との間で乱反射する光を吸収する反射防止膜をプロー
ブ基板に被覆したので、光電素子に入射する光の照度を
均一にすることができ、光感度、感度均一性等の特性が
安定し、測定精度および歩留りが向上する。As described above, according to the present invention, since the probe substrate is coated with an anti-reflection film that absorbs light diffusely reflected between the test substrate and the probe substrate, the illuminance of the light incident on the photoelectric element can be made uniform. properties such as photosensitivity and sensitivity uniformity are stabilized, and measurement accuracy and yield are improved.
第１図は本発明の一実施例の平面図、第２図はそのＩ−
Ｉ線断面図、第３図は従来例の平面図、第４図はそのＩ
Ｉ−Ｉ線断面図である。
１・・・ウェーハ、３・・・光電素子、４・・・光電素
子列、１１．２１・・・入光窓、１２．２２・・・コン
タクト針、２３・・・反射防止膜。
出願人代理人 佐 藤 −雄
色 Ｉ 喝
色２ 図Fig. 1 is a plan view of one embodiment of the present invention, and Fig. 2 is its I-
3 is a plan view of the conventional example, and FIG. 4 is its I line sectional view.
It is a sectional view taken along the line I-I. DESCRIPTION OF SYMBOLS 1... Wafer, 3... Photoelectric element, 4... Photoelectric element row, 11.21... Light entrance window, 12.22... Contact needle, 23... Antireflection film. Applicant's agent Sato -Yoshiki I Yoshiki 2 Figure
Claims (1)
た固体撮像装置中の被試験光電素子に光を照射させる入
光窓と、前記光電素子の電極に接触して信号の授受を行
う複数のコンタクト針とを備えた固体撮像装置の試験用
プローブ基板において、少なくともその下面および前記
入光窓壁に被試験基板からの反射光を吸収する非導電性
の反射防止膜が形成されていることを特徴とする固体撮
像装置の試験用プローブ基板。 ２、反射防止膜が黒色膜である特許請求の範囲第１項記
載の固体撮像装置の試験用プローブ基板。 ３、黒色膜が炭素を主体とする膜である特許請求の範囲
第２項記載の固体撮像装置の試験用プローブ基板。[Scope of Claims] 1. A light entrance window that irradiates light to a photoelectric element under test in a solid-state imaging device in which a plurality of photoelectric elements forming pixels are arranged and formed on a substrate, and a light entrance window that contacts an electrode of the photoelectric element. In a test probe board for a solid-state imaging device, which is equipped with a plurality of contact needles for sending and receiving signals, a non-conductive anti-reflection film that absorbs reflected light from the board under test is provided on at least the bottom surface and the wall of the light input window. A probe substrate for testing a solid-state imaging device, characterized in that a film is formed thereon. 2. The probe substrate for testing a solid-state imaging device according to claim 1, wherein the antireflection film is a black film. 3. The probe substrate for testing a solid-state imaging device according to claim 2, wherein the black film is a film mainly composed of carbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60150978A JPS6211393A (en) | 1985-07-09 | 1985-07-09 | Probe substrate for testing solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60150978A JPS6211393A (en) | 1985-07-09 | 1985-07-09 | Probe substrate for testing solid-state image pickup device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6211393A true JPS6211393A (en) | 1987-01-20 |
| JPH0257394B2 JPH0257394B2 (en) | 1990-12-04 |
Family
ID=15508607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60150978A Granted JPS6211393A (en) | 1985-07-09 | 1985-07-09 | Probe substrate for testing solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6211393A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0590303A (en) * | 1991-03-18 | 1993-04-09 | Hughes Aircraft Co | Thin charge coupled device and manufacture thereof |
| US5371352A (en) * | 1993-01-29 | 1994-12-06 | Mitsubishi Denki Kabushiki Kaisha | Photodetector comprising a test element group of PN junctions and including a mask having at least one window spaced apart from the PN junctions |
| JPH0732954U (en) * | 1993-11-29 | 1995-06-16 | 日本電子材料株式会社 | Optical element probe and optical element probe card using the same |
| JP2015105834A (en) * | 2013-11-28 | 2015-06-08 | 東京エレクトロン株式会社 | Electronic component inspection device, electronic component inspection method, and program for inspection method |
-
1985
- 1985-07-09 JP JP60150978A patent/JPS6211393A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0590303A (en) * | 1991-03-18 | 1993-04-09 | Hughes Aircraft Co | Thin charge coupled device and manufacture thereof |
| US5371352A (en) * | 1993-01-29 | 1994-12-06 | Mitsubishi Denki Kabushiki Kaisha | Photodetector comprising a test element group of PN junctions and including a mask having at least one window spaced apart from the PN junctions |
| JPH0732954U (en) * | 1993-11-29 | 1995-06-16 | 日本電子材料株式会社 | Optical element probe and optical element probe card using the same |
| JP2015105834A (en) * | 2013-11-28 | 2015-06-08 | 東京エレクトロン株式会社 | Electronic component inspection device, electronic component inspection method, and program for inspection method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0257394B2 (en) | 1990-12-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |