JPS62113460A - Heat protective circuit - Google Patents
Heat protective circuitInfo
- Publication number
- JPS62113460A JPS62113460A JP60254126A JP25412685A JPS62113460A JP S62113460 A JPS62113460 A JP S62113460A JP 60254126 A JP60254126 A JP 60254126A JP 25412685 A JP25412685 A JP 25412685A JP S62113460 A JPS62113460 A JP S62113460A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- constant current
- current source
- collector
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electronic Switches (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は熱保護回路に関し、特に半導体集積回路に組み
込まれた熱保護回路に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a thermal protection circuit, and more particularly to a thermal protection circuit incorporated in a semiconductor integrated circuit.
従来の技術
従来、この種の熱保護回路は、第２図に示すような構成
であった。第２図において、１は基準電圧源、２は温度
検出装置、３はヒステリシスコンパレータ、４は出力回
路であり、温度検出装置２の発生する電圧が温度により
変化するのを利用し。BACKGROUND OF THE INVENTION Conventionally, this type of thermal protection circuit has had a configuration as shown in FIG. In FIG. 2, 1 is a reference voltage source, 2 is a temperature detection device, 3 is a hysteresis comparator, and 4 is an output circuit, which utilizes the fact that the voltage generated by the temperature detection device 2 changes depending on the temperature.
さらにヒステリシスコンパレータ３でヒステリシスを作
り出すという構成であった。Furthermore, the configuration was such that hysteresis was created by a hysteresis comparator 3.
発明が解決しようとする問題点
このような従来の構成では、部品点数が多く、半導体集
積回路にこの熱保護回路を導入する結果、マスクパター
ンが大きくなってしまうといった問題があった。Problems to be Solved by the Invention In such a conventional configuration, the number of components is large, and as a result of introducing this thermal protection circuit into a semiconductor integrated circuit, the mask pattern becomes large.
本発明はこのような問題点を解決するもので、部品点数
の削減をはかり、マスクパターンの小型化をもたらす熱
保護回路を提供することを目的とするものである。The present invention is intended to solve these problems, and aims to provide a thermal protection circuit that reduces the number of parts and reduces the size of the mask pattern.
問題点を解決するための手段
前記の問題点を解決するために、本発明は、エミッタ接
地の第１のトランジスタのベースに、一端を接地した第
１の抵抗の他端と第１の定電流源の饋電端とダイオード
の前記第１のトランジスタのベースと反対導電型の一端
とを接続し、前記第１のトランジスタのコレクタに、第
２及び第３の抵抗の一端と第２の定電流源の饋電端とを
接続し、前記第１のトランジスタと同一極性のエミッタ
接地の第２及び第３のトランジスタのベースに、夫々前
記第２及び第３の抵抗の他端を接続し、前記第２のトラ
ンジスタのコレクタに、前記ダイオードの他端と第３の
定電流源の傾電端とを接続し、前記第３のトランジスタ
のコレクタに、前記第１のトランジスタと同一極性のエ
ミッタ接地の第４のトランジスタのベースと第４の定電
流源の饋電端とを接続し、前記第４のトランジスタのコ
レクタを出力端子としたことを特徴とする熱保護回路を
提供する。Means for Solving the Problems In order to solve the problems described above, the present invention provides a first resistor whose one end is grounded, the other end of which is connected to the base of the first transistor whose emitter is grounded, and a first constant current. The feed end of the source is connected to the base of the first transistor of the diode and one end of the opposite conductivity type, and the collector of the first transistor is connected to one end of the second and third resistors and a second constant current. the other ends of the second and third resistors are connected to the bases of second and third transistors having common emitters and having the same polarity as the first transistor; The other end of the diode and the tilted end of the third constant current source are connected to the collector of the second transistor, and the collector of the third transistor is connected to a common emitter of the same polarity as the first transistor. A thermal protection circuit is provided, characterized in that the base of a fourth transistor is connected to the feed terminal of a fourth constant current source, and the collector of the fourth transistor is used as an output terminal.
作用
この構成により、第１の抵抗に昇温時には第１の定電流
源のみから超電しかつ降温時には第１及び第３の定電流
源から饋電する事により発生する基準電圧のヒステリシ
スを利用して、熱保護回路のオン・オフを制御する。従
って従来の熱保護回路におけるヒステリシスコンパレー
タが省略でき、部品点数を大巾に減少できるうえにマス
クパターンも縮小出来る。Effect: This configuration utilizes the hysteresis of the reference voltage that is generated by feeding the first resistor only from the first constant current source when the temperature rises and from the first and third constant current sources when the temperature falls. to control on/off of the thermal protection circuit. Therefore, the hysteresis comparator in the conventional thermal protection circuit can be omitted, the number of parts can be greatly reduced, and the mask pattern can also be reduced.
実施例 以下に１本発明の一実施例を第１図に従って説明する。Example An embodiment of the present invention will be described below with reference to FIG.
まず回路構成について記す。エミッタ接地のＮＰＮトラ
ンジスタ７のベースに、一端を接地した抵抗８の他端と
、定電流源９の饋電端と、ダイオード１０のカソード端
子とを接続する。前記トランジスタ７のコレクタには抵
抗１１及び１２の一端と、定電流源１３の饋電端とを接
続する。エミッタ接地のＮＰＮトランジスタ１４及び１
５のベースに、それぞれ前記抵抗１１及び１２の他端を
接続し、前記トランジスタ１４のコレクタには前記ダイ
オード１０のアノード端子と定電流源１６の饋電端とを
接続する。前記トランジスタ１５のコレクタにはエミッ
タ接地のＮＰＮトランジスタ１７のベースと定電流源１
８の饋電端とを接続し、前記トランジスタ１７のコレク
タを被保護回路に接続する。First, the circuit configuration will be described. The base of the NPN transistor 7 whose emitter is grounded is connected to the other end of a resistor 8 whose one end is grounded, to the feed end of a constant current source 9, and to the cathode terminal of a diode 10. The collector of the transistor 7 is connected to one end of the resistors 11 and 12 and the feed end of a constant current source 13. NPN transistors 14 and 1 with common emitters
The other ends of the resistors 11 and 12 are connected to the bases of the transistor 5, respectively, and the anode terminal of the diode 10 and the feed terminal of the constant current source 16 are connected to the collector of the transistor 14. The collector of the transistor 15 is connected to the base of an NPN transistor 17 whose emitter is grounded and the constant current source 1.
The collector of the transistor 17 is connected to the circuit to be protected.
次に本回路の動作について記す。トランジスタ７がオフ
している時、トランジスタ１４及び１５はオンし、出力
トランジスタ１７はオフしている。この時定電流源１６
の電流工、はトランジスタ１４に流れ、ダイオードＩＯ
には流れない。Next, the operation of this circuit will be described. When transistor 7 is off, transistors 14 and 15 are on and output transistor 17 is off. This time constant current source 16
The current flow through the transistor 14 and the diode IO
It doesn't flow.
１−ランジスタフのベース電位ＶＢは、定電流源９の電
流■１と抵抗８により次に示す式（１）で表わされる。The base potential VB of the 1-range staff is expressed by the following equation (1) using the current 1 of the constant current source 9 and the resistor 8.
ＶＢ＝Ｉ□・Ｒエ ・・・（１）
但し、Ｒ１・・・抵抗８の抵抗値
この時、トランジスタ７がオンする電圧を ＶＢＥｔ（
ＯＮ）とすると、室温で
Ｖｎ＜ＶｎＥｘｔｏＮ）−（２）
となるように抵抗値Ｒ２と電流工、を選ぶ。VB=I□・Re...(1) However, R1...Resistance value of resistor 8 At this time, the voltage at which transistor 7 turns on is VBEt(
ON), the resistance value R2 and the current are selected so that Vn<VnExtoN)-(2) at room temperature.
この状態で温度を上げていくと、ある温度で、ｖ１１＝
ｖＢＥ１（ＯＮ）°０（３）
となるような温度Ｔｃ（ＯＮ）が存在する。これを熱保
護動作温度と呼ぶ。When the temperature is raised in this state, at a certain temperature, v11=
There exists a temperature Tc(ON) such that vBE1(ON)°0(3). This is called the thermal protection operating temperature.
いま、トランジスタ７がオンする電圧ＶＩＥ工（ＯＮ）
は１次の式（４）の関係にあると近似する。Now, the voltage at which transistor 7 turns on (ON)
is approximated by the linear relationship expressed by equation (4).
Ｖｎｔｘ（ｏＮ）＝Ｖｅｉ１（＊ｒ）−に−（Ｔ−Ｔｌ
ｌｔ） ＋＋＋ （４）但し、ＶＩＥよ（ＲＴ）・・・
トランジスタ７が室温でオンする電圧
Ｋ ・・・比例定数（普通約２ ｍ Ｖ ／ ’Ｃ
）Ｔ ・・・周囲温度
ＴＲＴ ・・・室温
すると、先のＴａ１ｏｎ）は次式（５）で表わされる。Vntx(oN)=Vei1(*r)-to-(T-Tl
lt) +++ (4) However, VIE (RT)...
Voltage K at which transistor 7 turns on at room temperature... proportionality constant (usually about 2 mV/'C
)T...ambient temperature TRT...room temperature, the above Ta1on) is expressed by the following equation (5).
トランジスタ７がオンすると、トランジスタ１４及び１
５はオフし、出力トランジスタ１７がオンして熱保護が
かかる。この時、トランジスタ１４がオフしているため
、電流源１６の電流Ｉ、は、ダイオードＩＯを通ってト
ランジスタ７と抵抗８に流れる。When transistor 7 is turned on, transistors 14 and 1
5 is turned off, and the output transistor 17 is turned on to provide thermal protection. At this time, since the transistor 14 is off, the current I of the current source 16 flows to the transistor 7 and the resistor 8 through the diode IO.
次に温度が下がり、トランジスタ７がオフする時を考え
る。この時のトランジスタ７のベース電位ｖＢ′は式（
１）とは異なり１式（６）で表わされる。Next, consider when the temperature drops and transistor 7 turns off. The base potential vB' of the transistor 7 at this time is expressed by the formula (
Unlike 1), it is expressed by equation 1 (6).
ｖＢ′＝Ｒよ・（１１＋■、）・・・（６）この電位ｖ
Ｂ′ が
Ｖｏ’ ＝ ＶＢＥＩ（ＯＮ） −（７）となる
温度を熱保護解除温度Ｔ（！（ＯＦＦ）と呼び、式４式
％
この温度以下になると再びトランジスタ７はオフとなり
、熱保護が解除される。vB'=R (11+■,)...(6) This potential v
The temperature at which B' satisfies Vo' = VBEI(ON) - (7) is called the thermal protection release temperature T(!(OFF)), and is expressed by Formula 4 below. It will be canceled.
適切なＩ□、 Ｉ３． Ｒ，を設定してやれば、希望す
る熱保護動作温度Ｔｃ（ＯＮ）、熱保護解除温度Ｔｃ（
ＯＦＦ）が得られる・
発明の効果
以上のように本発明によれば、少ない素子数で、高精度
なヒステリシスをもつ熱保護回路が得られる。Appropriate I□, I3. By setting R, the desired thermal protection operating temperature Tc (ON) and thermal protection release temperature Tc (
Effects of the Invention As described above, according to the present invention, a thermal protection circuit with highly accurate hysteresis can be obtained with a small number of elements.
第１図は本発明の一実施例による熱保護回路を示す回路
図、第２図は従来の熱保護回路を示す回路図である。
７ 、１．４．１５．１７・・・トランジスタ、１０・
・・ダイオード、８．Ｉｔ、１２・・・抵抗、 ９ 、
１３．１６．１８・・電流源代理人 森 本
義 弘
第１図
７、／４．／立／７−−− ）ランシ′°スダ／／−７
’４オート°゛
メ、 ／／、／２−砲坑
月ｙ３． ／１．／、／一定電流魔
笛２図FIG. 1 is a circuit diagram showing a thermal protection circuit according to an embodiment of the present invention, and FIG. 2 is a circuit diagram showing a conventional thermal protection circuit. 7, 1.4.15.17...transistor, 10.
...Diode, 8. It, 12...Resistance, 9,
13.16.18...Current source agent Morimoto
Yoshihiro Figure 1 7, /4. /stand/7---)Ranshi'°Suda//-7
'4 auto °゛me, //, /2-gun well month y3. /1. /,/Constant current magic flute 2 diagram
Claims (1)
端を接地した第１の抵抗の他端と第１の定電流源の饋電
端とダイオードの前記第１のトランジスタのベースと反
対導電型の一端とを接続し、前記第１のトランジスタの
コレクタに、第２及び第３の抵抗の一端と第２の定電流
源の饋電端とを接続し、前記第１のトランジスタと同一
極性のエミッタ接地の第２及び第３のトランジスタのベ
ースに、夫々前記第２及び第３の抵抗の他端を接続し、
前記第２のトランジスタのコレクタに、前記ダイオード
の他端と第３の定電流源の饋電端とを接続し、前記第３
のトランジスタのコレクタに、前記第１のトランジスタ
と同一極性のエミッタ接地の第４のトランジスタのベー
スと第４の定電流源の饋電端とを接続し、前記第４のト
ランジスタのコレクタを出力端子としたことを特徴とす
る熱保護回路。1. A first resistor whose one end is grounded, the other end of which is connected to the base of the first transistor whose emitter is grounded, the feed end of the first constant current source, and a diode of the opposite conductivity type to the base of the first transistor. one end of the second and third resistors and a feed terminal of a second constant current source are connected to the collector of the first transistor, and an emitter of the same polarity as the first transistor. connecting the other ends of the second and third resistors to the grounded bases of the second and third transistors, respectively;
The other end of the diode and the feed end of the third constant current source are connected to the collector of the second transistor, and the third
The base of a fourth transistor with a common emitter and the same polarity as the first transistor is connected to the collector of the transistor, and the feed terminal of a fourth constant current source is connected to the collector of the fourth transistor, and the collector of the fourth transistor is connected to the output terminal. A thermal protection circuit characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60254126A JPH0682777B2 (en) | 1985-11-13 | 1985-11-13 | Thermal protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60254126A JPH0682777B2 (en) | 1985-11-13 | 1985-11-13 | Thermal protection circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62113460A true JPS62113460A (en) | 1987-05-25 |
| JPH0682777B2 JPH0682777B2 (en) | 1994-10-19 |
Family
ID=17260583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60254126A Expired - Lifetime JPH0682777B2 (en) | 1985-11-13 | 1985-11-13 | Thermal protection circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0682777B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02268513A (en) * | 1989-04-11 | 1990-11-02 | New Japan Radio Co Ltd | Thermal shielding circuit |
| EP0481105A1 (en) * | 1990-10-15 | 1992-04-22 | Siemens Aktiengesellschaft | Circuit arrangement for detecting an excess temeprature in an electronic component |
| JPH07161920A (en) * | 1993-12-08 | 1995-06-23 | Nec Corp | Semiconductor integrated circuit |
| US5484013A (en) * | 1993-05-27 | 1996-01-16 | Nippon Densan Corporation | Heat sink fan |
-
1985
- 1985-11-13 JP JP60254126A patent/JPH0682777B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02268513A (en) * | 1989-04-11 | 1990-11-02 | New Japan Radio Co Ltd | Thermal shielding circuit |
| EP0481105A1 (en) * | 1990-10-15 | 1992-04-22 | Siemens Aktiengesellschaft | Circuit arrangement for detecting an excess temeprature in an electronic component |
| US5484013A (en) * | 1993-05-27 | 1996-01-16 | Nippon Densan Corporation | Heat sink fan |
| JPH07161920A (en) * | 1993-12-08 | 1995-06-23 | Nec Corp | Semiconductor integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0682777B2 (en) | 1994-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |