JPS62109341A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To improve the reliability of a semiconductor device against wiring disconnection by forming an aluminum conductive film such as aluminum alloy film having good coverage at a step such as a contact of an insulating film surface in case of forming electrodes and a wiring film. CONSTITUTION:When electrodes and a wiring film are formed on an interlayer insulating film 2 having a contacting hole 21 formed on a silicon substrate 1, the film 2 is coated with solution which contains liquidlike aluminum compound or aluminum, and then post-treated such as heat treated to form an aluminum alloy film 3. In this case, the substance of the solution contains any of hydrogen, carbon and oxygen. The film 3 has no overhang in a hole on the film 2 as well as preferable coverage at steps such as contacts.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of forming electrodes and wiring films in a large-scale integrated circuit (hereinafter referred to as LSI).

[Conventional technology]

In semiconductor integrated circuits (IC), LSI.

As it becomes more highly integrated with VLSI, it is being miniaturized according to the law of proportional reduction. Although the diameter of the contact hole has been reduced in accordance with this proportional reduction law, the interlayer insulating film has not become thinner. For this reason, the contact hole has a large aspect ratio (in the direction of becoming larger).Therefore, the contact hole is used to form an aluminum alloy on the surface of the insulating layer on the semiconductor substrate using the sputtering method that has been commonly used. When the film is formed as an electrode or a wiring film, this aluminum alloy film 31 is in an overhang state at the contact hole portion 21 of the interlayer insulating film 2 formed on the silicon substrate 1 as a semiconductor substrate, as shown in FIG. This results in poor contact sidewall coverage.

[Problem that the invention seeks to solve]

As described above, in the conventional method for manufacturing a semiconductor device, when an aluminum alloy film is formed, coverage of the aluminum alloy film on the contact sidewall on the surface of the interlayer insulating film is poor, resulting in problems such as disconnection noise.

This invention was made to solve all of the above-mentioned problems, and when forming electrodes and wiring films, it is possible to form an aluminum conductive film such as an aluminum alloy film that has good coverage at stepped parts such as contacts on the surface of the insulating film. By doing so, it is an object of the present invention to provide a method for manufacturing a semiconductor device that has improved reliability against disconnection.

[Means for solving problems]

In the method for manufacturing a semiconductor device according to the present invention, in the step of completely forming an electrode and a wiring film on the surface of an insulating film on a semiconductor substrate via the contact hole, a liquid aluminum compound or aluminum is included on the surface of the insulating film. This method is characterized by forming an aluminum conductive film by applying a solution.

[For production]

In this invention, by forming the aluminum conductive film by a coating method, a film with good coverage at stepped portions such as contacts can be obtained.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a cross-sectional view of the pouring process in an embodiment of the method for manufacturing a semiconductor device according to the present invention. This embodiment differs from the conventional one shown in FIG. 2 in that it has a contact hole 21 formed on the silicon substrate 1. interlayer insulating film 2 having
When forming electrodes and wiring films on the surface of the interlayer insulating film 20, a liquid aluminum compound or a solution containing aluminum is applied to the surface of the interlayer insulating film 20, and then post-treatment such as heat treatment is performed to form an aluminum alloy film 3. It is.

In this case, hydrogen is used as the substance constituting the liquid aluminum compound or solution containing aluminum.

Contains either carbon or oxygen.

In this way, by forming the aluminum alloy film 3 by the entire coating method, the aluminum alloy film 3 has no overhang at the contact hole portion on the surface of the interlayer insulating film 2, as shown in FIG. Good coverage at stepped portions such as contacts can be obtained.

In addition, although the above-mentioned example described the case where an aluminum alloy film was used as an electrode and a wiring film, an aluminum film may be used.

Further, in the above embodiment, the case was described in which the method was applied to the first layer of the aluminum alloy film, but it can also be applied to the second and subsequent layers.

〔Effect of the invention〕

As described above, according to the present invention, by forming an aluminum conductive film such as an aluminum alloy film or an aluminum film by a full coating method, a film with good coverage at stepped portions such as contacts can be obtained. There is an effect that the reliability of the semiconductor device can be improved in all respects.

[Brief explanation of drawings]

FIG. 1 is a process sectional view showing an embodiment of a method for manufacturing a semiconductor device according to the present invention, and FIG. 2 is a process sectional view showing an example of a conventional method. 1...Nilicon substrate, 2...Interlayer insulating film, 21
...Contact hole, 3...Aluminum alloy film. Miscellaneous Figure 1 Figure 2 Procedural amendment (voluntary) Gong: Otsu Showa year, month, day

Claims (1)

[Claims] In the process of forming electrodes and wiring films on the surface of an insulating film on a semiconductor substrate through the contact holes, a liquid aluminum compound or a solution containing aluminum is applied to the surface of the insulating film to form an aluminum conductive film. A method for manufacturing a semiconductor device, characterized in that: