JPS62101259U - - Google Patents

Info

Publication number
JPS62101259U
JPS62101259U JP19175185U JP19175185U JPS62101259U JP S62101259 U JPS62101259 U JP S62101259U JP 19175185 U JP19175185 U JP 19175185U JP 19175185 U JP19175185 U JP 19175185U JP S62101259 U JPS62101259 U JP S62101259U
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser chip
mount
emitting device
pin photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19175185U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP19175185U priority Critical patent/JPS62101259U/ja
Publication of JPS62101259U publication Critical patent/JPS62101259U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案によるレーザ出射装置の一実施
例を示す一部破断斜視図、第2図は第1図の装置
における半導体レーザチツプとPINフオトダイ
オードとの電気的接続を示した結線図、第3図は
従来のレーザ出射装置の一部破断斜視図、第4図
は第3図の装置における半導体レーザチツプとP
INフオトダイオードとの電気的結線図、第5図
は第3図の装置における半導体レーザチツプの発
光部とマウントとの相対的位置関係を示した平面
図、第6図は従来の他のレーザ出射装置における
半導体レーザチツプとマウントとの相対的位置関
係を示した平面図、第7図は第6図に示した従来
のレーザ出射装置における電気的結線を示した図
、第8図は第6図とは異る他のレーザ出射装置に
おける半導体レーザチツプとマウントとの取付構
造を示した平面図である。 1…半導体レーザチツプ、1a…発光部、2…
マウント、3…ベース、4…PINフオトダイオ
ード、5…キヤツプ、6,6A…第一の端子、7
,7A…第二の端子、8,8A…第三の端子、1
1…絶縁材、9,10,14〜16…ボンデイン
グワイヤ、12…電極、13…絶縁板。
FIG. 1 is a partially cutaway perspective view showing an embodiment of the laser emitting device according to the present invention, FIG. 2 is a wiring diagram showing the electrical connection between the semiconductor laser chip and the PIN photodiode in the device of FIG. Fig. 3 is a partially cutaway perspective view of a conventional laser emitting device, and Fig. 4 shows the semiconductor laser chip and P in the device of Fig. 3.
An electrical connection diagram with an IN photodiode, Fig. 5 is a plan view showing the relative positional relationship between the light emitting part of the semiconductor laser chip and the mount in the device shown in Fig. 3, and Fig. 6 shows another conventional laser emitting device. 7 is a plan view showing the relative positional relationship between the semiconductor laser chip and the mount, FIG. 7 is a diagram showing the electrical connections in the conventional laser emitting device shown in FIG. 6, and FIG. 8 is different from FIG. FIG. 7 is a plan view showing a mounting structure between a semiconductor laser chip and a mount in another different laser emitting device. 1... Semiconductor laser chip, 1a... Light emitting part, 2...
Mount, 3... Base, 4... PIN photodiode, 5... Cap, 6, 6A... First terminal, 7
, 7A... second terminal, 8, 8A... third terminal, 1
DESCRIPTION OF SYMBOLS 1... Insulating material, 9, 10, 14-16... Bonding wire, 12... Electrode, 13... Insulating plate.

Claims (1)

【実用新案登録請求の範囲】 半導体レーザチツプと、該半導体レーザチツプ
がロウ付けされているマウントと、該半導体レー
ザチツプの裏面から出射されるレーザビームを検
知するためのPINフオトダイオードと、を有す
るレーザ出射装置において、 該半導体レーザチツプの発光部に近い方の電極
面を該マウントに直接ロウ付けするとともに該半
導体レーザチツプのアノードと該PINフオトダ
イオードのカソードとを共通の端子に接続し、更
に該端子を該マウントに対して電気的に絶縁した
ことを特徴とするレーザ出射装置。
[Claims for Utility Model Registration] A laser emitting device comprising a semiconductor laser chip, a mount to which the semiconductor laser chip is brazed, and a PIN photodiode for detecting a laser beam emitted from the back surface of the semiconductor laser chip. In this step, the electrode surface of the semiconductor laser chip closer to the light emitting part is directly brazed to the mount, and the anode of the semiconductor laser chip and the cathode of the PIN photodiode are connected to a common terminal, and the terminal is connected to the mount. A laser emitting device characterized in that it is electrically insulated.
JP19175185U 1985-12-13 1985-12-13 Pending JPS62101259U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19175185U JPS62101259U (en) 1985-12-13 1985-12-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19175185U JPS62101259U (en) 1985-12-13 1985-12-13

Publications (1)

Publication Number Publication Date
JPS62101259U true JPS62101259U (en) 1987-06-27

Family

ID=31146184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19175185U Pending JPS62101259U (en) 1985-12-13 1985-12-13

Country Status (1)

Country Link
JP (1) JPS62101259U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111389A (en) * 1981-12-25 1983-07-02 Hitachi Ltd Laser diode with light-receiving element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111389A (en) * 1981-12-25 1983-07-02 Hitachi Ltd Laser diode with light-receiving element

Similar Documents

Publication Publication Date Title
TWI229458B (en) Back luminescent chip type light emitting unit and insulating substrate using the same
JPH0794627A (en) Semiconductor device
US4032964A (en) Multiple hybrid semiconductor structure
JPS62101259U (en)
JPS58199573A (en) Semiconductor device
JP2654988B2 (en) Semiconductor laser device
JPH10256319A (en) Semiconductor device
JPS63102249U (en)
JPH0383952U (en)
JPS61149344U (en)
JPH0453017Y2 (en)
JPH04199588A (en) Optical semiconductor device stem
JPH0741167Y2 (en) Insulator-sealed circuit device
JPS5935001Y2 (en) optical bidirectional thyristor
JPH0410349U (en)
JPS645460U (en)
JPH01145161U (en)
JPH02114941U (en)
JPS6282736U (en)
JPH0170346U (en)
JPS61140560U (en)
JPS6219737U (en)
JPS62126845U (en)
JPS6367253U (en)
JPS61186250U (en)