JPS6199673A - スパツタ装置 - Google Patents

スパツタ装置

Info

Publication number
JPS6199673A
JPS6199673A JP21577984A JP21577984A JPS6199673A JP S6199673 A JPS6199673 A JP S6199673A JP 21577984 A JP21577984 A JP 21577984A JP 21577984 A JP21577984 A JP 21577984A JP S6199673 A JPS6199673 A JP S6199673A
Authority
JP
Japan
Prior art keywords
target
magnet
sputtering
film thickness
thickness distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21577984A
Other languages
English (en)
Japanese (ja)
Other versions
JPS642189B2 (enrdf_load_stackoverflow
Inventor
Shozo Satoyama
里山 正蔵
Reiji Nishikawa
西川 羚二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokuda Seisakusho Co Ltd
Original Assignee
Toshiba Corp
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokuda Seisakusho Co Ltd filed Critical Toshiba Corp
Priority to JP21577984A priority Critical patent/JPS6199673A/ja
Publication of JPS6199673A publication Critical patent/JPS6199673A/ja
Publication of JPS642189B2 publication Critical patent/JPS642189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP21577984A 1984-10-15 1984-10-15 スパツタ装置 Granted JPS6199673A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21577984A JPS6199673A (ja) 1984-10-15 1984-10-15 スパツタ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21577984A JPS6199673A (ja) 1984-10-15 1984-10-15 スパツタ装置

Publications (2)

Publication Number Publication Date
JPS6199673A true JPS6199673A (ja) 1986-05-17
JPS642189B2 JPS642189B2 (enrdf_load_stackoverflow) 1989-01-13

Family

ID=16678088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21577984A Granted JPS6199673A (ja) 1984-10-15 1984-10-15 スパツタ装置

Country Status (1)

Country Link
JP (1) JPS6199673A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63282263A (ja) * 1987-05-13 1988-11-18 Fuji Electric Co Ltd マグネトロンスパッタリング装置
WO1990013137A1 (en) * 1989-04-27 1990-11-01 Ionic Coatings Limited Sputtering apparatus
JP2001240964A (ja) * 1999-10-22 2001-09-04 Applied Materials Inc 2つの回転直径を有するスパッタマグネトロン

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956580A (ja) * 1982-09-27 1984-04-02 Fujitsu Ltd スパツタリング方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956580A (ja) * 1982-09-27 1984-04-02 Fujitsu Ltd スパツタリング方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63282263A (ja) * 1987-05-13 1988-11-18 Fuji Electric Co Ltd マグネトロンスパッタリング装置
WO1990013137A1 (en) * 1989-04-27 1990-11-01 Ionic Coatings Limited Sputtering apparatus
JP2001240964A (ja) * 1999-10-22 2001-09-04 Applied Materials Inc 2つの回転直径を有するスパッタマグネトロン

Also Published As

Publication number Publication date
JPS642189B2 (enrdf_load_stackoverflow) 1989-01-13

Similar Documents

Publication Publication Date Title
JP3408539B2 (ja) 半導体ウェーハ上の蒸着膜の特性制御
US4025410A (en) Sputtering apparatus and methods using a magnetic field
US9812304B2 (en) Method of fine tuning a magnetron sputtering electrode in a rotatable cylindrical magnetron sputtering device
JPH04124264A (ja) 基体上に物質層を堆積する方法と装置
US6126790A (en) Method of magnetically orienting thin magnetic films with a multiple-coil electromagnet
JP2970317B2 (ja) スパッタリング装置及びスパッタリング方法
JP2005187830A (ja) スパッタ装置
JPH07166346A (ja) マグネトロンスパッタリング装置
JPS6199673A (ja) スパツタ装置
GB2379670A (en) Sputtering Apparatus Using a Magnetic Field
JP3054441B2 (ja) マグネトロンスパッタコーテイング法と回転磁石陰極を備えた装置
JPH01309965A (ja) マグネトロンスパッタ装置
JP3056222B2 (ja) スパッタ装置およびスパッタ方法
JPH11200029A (ja) スパッタリング装置
JP2895506B2 (ja) スパッタ装置
JPH0352535B2 (enrdf_load_stackoverflow)
JP4274452B2 (ja) スパッタ源及び成膜装置
JPH0211761A (ja) スパッタリング装置
JP2746695B2 (ja) スパッタ装置及びスパッタ方法
JP2746292B2 (ja) スパッタリング装置
JPH0360916B2 (enrdf_load_stackoverflow)
JPS6365069A (ja) スパツタ装置
JPH02290971A (ja) スパッタ装置
JPH04371577A (ja) マグネトロン型スパッタリング装置
JP3545050B2 (ja) スパッタリング装置、及びスパッタリング薄膜生産方法