JPS6199146A - Photoreceptor - Google Patents

Abstract

PURPOSE:To prevent generation of interference fringes at the time of forming an image by forming on a substrate a photoreceptive layer contg. at least one of O, C, and N, and having at least one pair of nonparallel interfaces in short range to form a photoreceptor. CONSTITUTION:The photoreceptor is formed by successively laminating on the substrate the first amorphous layer contg. Si and Ge, and the second photoconductive amorphous layer contg. Si, and an amorphous surface layer made of Si and C. At least one of the first and the second layers contains a conductivity governing substance in a distribution nonuniform in the film thickness direction. Further, the photoreceptive layer contains at least one of O, C, and N, and it is provided with one pair of nonparallel interfaces or more in each short range arranged at least in one direction in a plane perpendicular to the film thickness direction.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention is applicable to electricity such as light (here, light in a broad sense - ultraviolet rays, visible light, infrared rays, X-rays, γ-rays, etc.). Concerning sensitive photoreceptive members. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Prior art]

As a method for recording digital F+-image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed. A well-known method is to record one image by performing processes such as transfer and fixing as necessary. Among them, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive laser, a fi, He-Me laser, or a semiconductor laser (usually having an emission wavelength of 650 to 820 nm). .

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. is high.

For example, in JP-A-54-883, it is non-polluting from a social perspective.
Amorphous materials containing silicon atoms (hereinafter referred to as RA-9i
A light-receiving member consisting of a material (abbreviated as J) has been attracting attention.

However, if the photoreceptive layer is a single-layer a-5i layer, hydrogen must be Because it is necessary to structurally contain atoms, halogen atoms, or poron atoms in addition to these atoms in a controlled manner in the entire specific range of the layer, it is necessary to strictly control the formation of one layer. etc.

There are considerable limitations on the tolerances in the design of light receiving members.

This design tolerance can be expanded. Even if the dark resistance is low to some extent, the high light sensitivity can be effectively used.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer.
No. 178, No. 52179, No. 52180, No. 581
59, No. 58180, and No. 58181, a multilayer structure may be provided in which a barrier layer is provided between the support and the photoreceptive layer and/or on the upper surface of the photoreceptive layer. Therefore, a light-receiving member that has the above-mentioned apparent dark resistance has been proposed.

Through such proposals, a-Si light-receiving members have made dramatic progress in terms of commercialization design tolerances, ease of manufacturing management, and productivity. The speed at which vA is launched is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). Each of the incoming reflected lights can cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes one image defect. Particularly when forming a half-tone image with high gradation, the visual quality of one image becomes noticeable.

Moreover, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is caused by fJ.

This point will be explained with reference to the drawings.

FIG. 1 shows light incident on a certain layer constituting the light-receiving layer of a light-receiving member. Reflected light RI reflected at the and - part interface 102
, shows the reflected light R2 reflected from the lower surface 1.

. If the average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is uneven due to the thickness difference, then 1 reflected light R1 + R2 enters 2nd = m (m is an integer 1 The reflected lights strengthen each other) and 2nd = ( m + -) entered (m
Ha*l! Depending on which of the following conditions (reflected light weakens each other) is met, the absorption and transmission of a certain layer changes.

In a light-receiving member with a multilayer structure, the interference effect shown in Fig. 1 occurs in each layer, and as shown in Fig. 7fS2, 11FWf
l-F#l-: Yo. □. ca<ica, +
Because of this, interference fringes corresponding to the interference pattern appear in the visible image transferred and fixed to the transfer member, causing a defective image.

To solve this problem, the surface of the support is diamond-cut to provide a cutting edge of ±500A to ±too.

A method of forming a light-scattering surface by carving out human irregularities (for example, Japanese Patent Application Laid-open No. 1821175/1983), the surface of an aluminum support is treated with black alumite, or carbon, color pigments, and dyes are dispersed in resin. A method of providing a light absorption layer by
A method of providing a light scattering and antireflection layer on the surface of an aluminum support by subjecting the surface of the support to a satin-like alumite treatment or by sandblasting to provide fine grain-like irregularities (for example, JP-A-57-18554). etc. have been proposed.

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on one image.

In other words, in the first method, only a large number of irregularities of a specific size are provided on the surface of the support, so although it does prevent the appearance of interference fringes due to light scattering effects, Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This caused a significant decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. Furthermore, when a colored pigment-dispersed resin layer is provided, when forming a-SiP+, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated.
1 due to damage caused by plasma during Si layer formation.
This has disadvantages such as reducing the original absorption function and causing a bad blue color to the subsequent formation of the Todoroki-Si layer due to deterioration of the surface condition.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. A part of it is reflected on the surface of the light-receiving layer 302 and becomes reflected light R1, and the rest is
The transmitted light II, which enters the inside of the light-receiving layer 302 and becomes the 'A-transmitted light 11, is partially scattered on the surface of the support 302 and becomes diffused light Kl +2 +. 3...
The rest is specularly reflected and becomes the reflected light R2, and a part of it becomes the emitted light R3 and goes outside.Therefore, the emitted light R3, which is the component that interferes with the reflected light R, remains.
Still, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a light-receiving member having a multilayer structure, as shown in FIG. light RI
, the specularly reflected light R3 on the surface of the support 401 interferes with each other,
An interference fringe pattern occurs depending on the thickness of each layer of the light-receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
1. It has been impossible to completely prevent interference fringes by irregularly roughening the surface.

In addition, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lofts, and even in the same lot, the degree of roughness is uneven, making it difficult to manufacture. Management was not good. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The inclined surface of the unevenness of the light receiving W 502 becomes parallel to the inclined surface of the unevenness of the light receiving W 502.

Therefore, in that part, the incident light satisfies 2nd+2m or 2ndl=(m+34)λ, which becomes a bright part or a dark part, respectively. Further, in the entire photoreceptive layer, a bright +vS striped pattern appears due to differences in the layer thicknesses d+ +d2 and d3 +dn of the photoreceptive layer.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, there is also interference due to the reflected light at the interface between each layer, so the degree of interference fringe pattern development becomes more complicated than that of a single-layered light-receiving member.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during one image formation and the appearance of spots during inversion fJ1.

Another object of the present invention is to provide a light-receiving member that has high electrical pressure resistance, high photosensitivity, and excellent electrophotographic properties.

Yet another object of the present invention is to provide a light-receiving member suitable for electrophotography that can obtain high-quality images with high density, clear halftones, and high resolution.

Another object of the present invention is to provide a light-receiving member that has excellent mechanical durability, particularly abrasion resistance and light-receiving properties on the surface of the light-receiving member.

[Summary of the invention]

The light-receiving member of the present invention includes a first layer made of an amorphous material containing silicon atoms and germanium atoms, and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. and a surface layer made of an amorphous material containing silicon atoms and carbon atoms are provided in order from the support side, and the gelyanium in the first layer The distribution state of atoms is non-uniform in the layer thickness direction,
At least one of the first layer and the i2 layer contains a substance that controls conductivity, and in the layer region containing the substance, the distribution state of the substance is non-uniform in the layer thickness direction. In addition, the photoreceptive layer contains at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms, and has one or more pairs of nonparallel interfaces within a short range, and the nonparallel A large number of such interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the inclined surface of the unevenness on a support (not shown) having an uneven shape smaller than the required resolution of the device, and the light-receiving layer has a sixth layer. As shown in a partially enlarged view of the figure, since the layer thickness of the second calendar 802 changes continuously from ds to di, the interface 603 and the interface 604 have a tendency toward each other. . Therefore, the coherent light incident on this minute portion (short range) l is the minute portion! interference occurs, producing minute interference fringe patterns.

In addition, as shown in FIG. 7, if the interface 703 between the first layer 7G+ and the second M702 and the free surface 704 of the second W702 are non-parallel, the reflection of the incident light 1o will occur as shown in FIG. 7(A). Since the traveling directions of the light R and the emitted light R5 are different from each other, when the interfaces 703 and 704 are parallel (r in FIG.
(B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), when a pair of interfaces are non-parallel (r (A) J) than when they are parallel (r (B) J), even if they interfere, there is no interference. striped pattern 1
The difference between 51 and 51 dark becomes negligible.

As a result, the amount of light incident on the minute portions is averaged.

This is true even if the thickness of the M2 layer 802 is macroscopically non-uniform (dykPde) as shown in the sixth factor, so the amount of incident light becomes uniform in the entire layer area ( (See r(D)J in Figure 6).

In addition, to describe the effect of the present invention when coherent light is transmitted from the irradiation side to the second WI when the light-receiving layer has a multilayer structure, as shown in FIG. ■.

There is one reflected light R1+R2+R3R4+R5 for each reflected light. In that nine-numbered calendar, what was explained above similar to Figure 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Furthermore, interference fringes that occur within minute portions do not appear in one image because the size of the small portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Even if there is, it is below the resolution of the eye, so it does not actually cause any trouble.

In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction.

The size of the minute part is suitable for the present invention! (one period of the uneven shape) is l≦L, where L is the spot diameter of the irradiation light.

Furthermore, in order to achieve the object of the present invention more effectively, the difference in layer thickness (ds-di) in the minute portion l is assumed to be the wavelength of the irradiated light.

Enter as −d, ≧ □ n (n::IS2 layer 602) refractive index) It is desirable that

In the present invention, a minute portion of a multilayered photoreceptive layer! The layer thickness of each layer is controlled within the microcolumn so that at least any two layer interfaces are in a non-parallel relationship within the layer thickness of (hereinafter referred to as "microcolumn"). As long as the conditions are satisfied, any two layer interfaces may be in a parallel relationship within the microcolumn.

However, the layers forming parallel layer interfaces should have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is less than -(n: layer refraction jl) 2n preferably formed.

In order to more effectively and easily achieve the object of the present invention, plasma gas is used to form the first layer and second layer constituting the photoreceptive layer because the layer thickness can be controlled accurately at the optical level. A phase method (PCVD method), a photo CVD method, and a thermal CVD method are employed.

The unevenness provided on the surface of the support is created by fixing a cutting tool with a figure-7 cutting edge in a pre-cutting position on a pre-cutting machine such as a milling machine or lathe, and rotating the cylindrical support according to a pre-designed program. By regularly moving in a predetermined direction while rotating, the surface of the support can be accurately cut to form a desired uneven shape, pitch, and depth. The inverted V-shaped linear protrusion created by the unevenness formed by such a cutting method has an n h:: structure centered on the central axis of the cylindrical support. The helical structure of the inverted V-shaped protrusion may be a double, triple, multiple helical structure, or a crossed itl structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure.

The vertical cross-sectional shape of the uneven convex portions provided on the surface of the support is determined by the controlled non-uniformity of the layer thickness within the microcolumns of each layer formed, and by the difference between the support and the layer directly provided on the support. In order to ensure good adhesion and desired electrical contact between the two, the inverted V-shape is used, but preferably the shape is substantially isosceles triangular, right-angled triangular, or not, as shown in FIG. It is preferable that the shape is an equilateral triangle, and particularly an isosceles triangle or a right triangle.

In the present invention, each dimension of the irregularities provided on the surface of the support in a controlled manner is set in such a way that one of the objects of the present invention can be achieved as a result, taking into account the following points.

That is, the first is the a-5i layer that constitutes the photoreceptive layer.

The structure is sensitive to the condition of the surface on which the layer is formed, and the quality of the layer changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration of the layer quality of the a SAW.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the plate gets damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the surface of the support is preferably 500 μs to
It is desirable that the time be 0.3 μs, more preferably 200 scales to 1 μs, most preferably 50 scales to 5 scales.

Further, the maximum depth of the recess is preferably 0.1-5μ,
More preferably 0.3u to 3-9 optimally 0.6u to 2
When the pitch and maximum depth of the recesses on the support surface are within the above range, which is preferably u, the slope of the slope of the recesses (or lines and protrusions) is .

Preferably it is 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees, most preferably 4 degrees to 10 degrees.

Also, based on the non-uniformity of the layer thickness of each layer deposited on such a support, the maximum layer thickness is preferably 0.1 to 2 scales within the same pitch, more preferably 0.1 to 2 scales within the same pitch. It is desirable that the scale be 1μ to 1.5 scales, most preferably 0.2 to 1u.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and exhibits photoconductivity. It has a multilayer structure in which a second layer and a surface layer made of an amorphous material containing silicon atoms and carbon atoms are provided in order from the support side, and the germanium atoms in the first layer are Since the distribution state is non-uniform in the layer thickness direction, it exhibits extremely excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. It has excellent light fatigue resistance and repeated use characteristics, high density, clear /\-tones, and high resolution.
High quality images can be obtained repeatedly.

Furthermore, IJI's single-ray light-receiving member has high photosensitivity in the entire visible light range, and has particularly excellent photosensitivity characteristics on the long wavelength side, making it particularly suitable for matching with semiconductor lasers. Fast response.

In the light-receiving member of the present invention, the surface layer made of an amorphous material containing silicon atoms and carbon atoms provided on the second layer has 1 as a protective layer for mechanical durability, and 4@ as a protective layer for mechanical durability. Optically, it is possible to mainly load 4@ as one antireflection layer.

The above surface layer is suitable to function as an antireflection layer when the following conditions are met:

That is, if the refractive index of the surface layer is n2, the layer thickness is d, and the wavelength of the incident light is input, then when the input n is 1 or several times its I, the surface layer has an anti! 1
1 defense is more suitable.

Also, if the refractive index of the second layer is n, then 1 of 1 surface layer is
μ-fold: When pn is n = 2, the surface layer is most suitable as an anti-reflection layer.

When using a-Si+H as the second layer, a-Si
:H has a refractive index of approximately 3.3, so a material with a refractive index i of 1.82 is suitable for one surface layer.

a-5iC:)l can be set to such a value of refractive index by adjusting the amount of C, and 4 is also sufficient for mechanical durability, adhesion between layers, and electrical properties. It is the most suitable material for one surface layer because it satisfies the .05~2u,
! :;ffg6cQ, more desired tLlr1.
From i onwards, the light receiving member of the present invention will be described in detail with reference to the drawings.

FIG. 10 is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 1θ has a light-receiving layer 1000 on a support 1001 for the light-receiving member, and the light-receiving layer 1000 has a free surface 1005 on one end surface. .

The photoreceptive layer 1000 is a-5i (hereinafter ra-5'iGe) containing germanium atoms and optionally hydrogen atoms and/or l\rogen atoms (X) from the support 1001 side.
(H,X) A first layer (abbreviated as J)
G) a-Si (hereinafter referred to as 1'a-
9i (abbreviated as (H,
The light-receiving member 1004 shown in FIG.

The surface layer 1006 formed on the second layer +003 has a free surface and mainly has moisture resistance and continuous repeated use characteristics.

Electrical pressure resistance 1. Mechanical durability, light reception characteristics (1. Provided in order to achieve the purpose of the present invention.

The surface layer 1006 in the present invention is composed of silicon atoms (Si
), a carbon atom (C), and optionally a hydrogen atom (H) and/or a l-rogen atom (X)
Hereafter, ra-(SixCt-x)y(H,X)+-
Written as y J, however, 0<! , 7<1).

The surface layer 1006 composed of a-(Six C, -X)y (H, Law.

Sputtering method, electron beam method, etc. are often used. These manufacturing methods are manufacturing conditions.

The production conditions are selected and adopted as appropriate depending on factors such as the load of equipment capital investment and the desired characteristics of the photoconductive member to be manufactured, but the manufacturing conditions for manufacturing the photoconductive member having the desired characteristics are determined. is relatively easy to control. The glow discharge method or the sputtering method is preferably employed because of the advantages that it is easy to introduce carbon atoms and halogen source r together with silicon atoms into the surface layer 100G made of Fl.

Historically, in the present invention, the glow emission method and the sputtering method were used together in the same system to form the surface layer 1006.
may be formed.

To form the surface layer 100B by the glow discharge method,
The raw material gas for forming a-(SixC+-x)y(HlX)+-y is used as a dilution gas as required! The mixture was mixed at the same mixing ratio and introduced into a deposition chamber where a support was installed.

The introduced gas is turned into gas plasma by causing a glow discharge, and a-(Six C+ -X)y is applied onto the first to second layers already formed on the support.
(H,X) ry may be deposited.

In the present invention, a-(St, C,-X)y (H
, Most gaseous substances or gasified substances that can be gasified may be used.

When using raw material gas having Si as a constituent atom as one of Si, C, H, and X, 1 For example, a raw material gas having Si as a constituent atom, a raw material gas having C as a constituent atom, If necessary, a raw material gas containing H constituent atoms and/or a raw material gas containing X constituent atoms may be mixed at a desired mixing ratio, or a raw material gas containing Si constituent atoms may be used.
Raw material gas containing C and H as constituent atoms and/or C and X
5iiH4J1 constituent atoms and a raw material gas containing three constituent atoms of Si, C, and H, also at a desired mixing ratio, or It can be used in combination with a raw material gas containing three constituent atoms: Si, CF3, and X.

In addition, separately, a raw material gas containing Si and H as constituent atoms,
A raw material gas containing C as a constituent atom may be mixed and used, or a raw material gas containing Si and X as a constituent atom may be mixed with a raw material gas containing C as a constituent atom.

In the present invention, halogen atoms contained in the surface layer 100S are preferably F and α.

Br, I, especially F, [! is desirable.

In the present invention, raw material gases that can be effectively used to form the surface layer 100B include those in a gaseous state or substances that can be easily gasified at normal temperature and normal pressure. .

In the present invention, SiH4,5i2)16, 513Ha, 5i, which has Si and H as the constituent elements r-, is effectively used as a raw material for forming one-surface Wjtoos.
Silicon hydride gas such as silanes of aHlo "9, C, !:H as constituent atoms, for example, saturated hydrocarbon water having 1 to 4 carbon atoms; and ethylene carbonization having 2 to 4 carbon atoms. Hydrogen, acetylenic hydrocarbon having 2 to 3 carbon atoms, /
10 Gen simple substance, hydrogen halide, I\interhalogen compound,
Examples include silicon halides, halogen-substituted silicon hydrides, and silicon hydrides. Specifically, the saturated hydrocarbons include methane (C)Ia), ethane (C2H4)-
Propa7 (C3H6), n-butane (n-CaH
IcI), pentane (C5H12), ethylene hydrocarbons include ethylene (C7H4), propyleno (
CiH6), butene-ICCaHs), butene-2 (Il:aHe), inbutylene (1:4
H8), pentene (CJ'to), acetylene hydrocarbons include acetylene ((:2H2), methylacetylene (C:3Ha), butyne (C4H&), and simple halogens include fluorine, salt, bromine, and iodine. vote I
\Rogen gas, /\Hydrogenide includes Fl (, former, Ha, Her, /λ interlogen compound:
BrF, αF, αF3, αF5.8rF5°BrF
3, IF7, IF3, Ia, IBr, /- 5iFa, Si2F6, Si as silicon rogenide
α3Br, Siα28F2.

5iCfBr3, 5iCI31. Si[lr4,
/\As the rogane-substituted silicon hydride, 5i82F2.
5iH7α2. SiHa,.

SiH3α, 5iH3Br, 5iH2Br2, 5i
As HBr3 silicon hydride, S:Ha, Si2H6
, 5i3H6, 514) + 10 shades of Silan
a) Class 1, etc. can be mentioned.

In addition to these, CFa, Ca, , CBr4. C)
IF3, CH, F2, CH3F, GH3Cj,
Halogen-substituted paraffin hydrocarbons such as OH, Br, CH31, C2H5α, SF4.

Fluorinated sulfur compounds such as SF; 5i(CH3)n
Alkyl silicides such as -5i(C7H5)n and sea (
CH3)3.

Silane derivatives such as halogen-containing alkyl silicides such as Siα2CCH3)2 and Siα3CH3 can also be mentioned as effective.

These surface layer 1006 forming substances are used to form the surface layer 1006 so that silicon atoms, carbon atoms, halogen atoms, and optionally hydrogen atoms are contained in the formed surface layer 1006 in a predetermined composition ratio. They are selected and used as desired during formation.

For example, inclusion of carbon atoms, carbon atoms, and hydrogen atoms can be easily achieved, and a layer with desired characteristics can be formed.
i(CH3)n and halogen atoms such as SiHα3, SiH2α2, Siα6, or 5iH31 are introduced at a predetermined mixing ratio in a gas state into an apparatus for forming the surface layer 100B to generate a glow discharge. By causing a−(SixC+−++)y (
A surface layer 1006 consisting of α+H)+-a can be formed.

To form the surface layer 100B by the sputtering method, a single-crystal or polycrystalline Si wafer, a C wafer, or a wafer containing a mixture of Sl and C is used as a target, and these are treated with halogen atoms or/and as required. This may be performed by sputtering in various gas atmospheres containing hydrogen atoms as constituent elements.

For example, if an SI wafer is used as a target, the raw material gas for introducing C, H and/or
The 51 wafer may be sputtered by diluting the gas as necessary and introducing it into a sputtering deposition chamber to form a gaseous plasma of these gases.

Alternatively, a gas containing water Jf This is done by sputtering in an atmosphere. In the case of the sputtering method, the material for forming the surface layer 100B shown in the glow discharge example described above is 64, 4fxth'Ak (, C4*□) as the raw material gas for introducing C, H, and X. ;'r
uqa, i In the present invention,
The diluent gas used when forming the surface layer 100B by glow radiation or sputtering is a so-called rare gas, such as He or Me.

Suitable examples include Ar and the like.

The surface layer 1008 in the present invention is carefully formed to provide the required properties as desired.

In other words, substances whose constituent atoms are Si, C, and H or/and In the present invention, a-
(SiXCI-X)y()1. X) The formation conditions are strictly selected according to the desired conditions so that 1-V is formed. (Si, c,
+g ) y (H,

In addition, if a surface layer +ooe is provided with the main purpose of improving the characteristics of continuous repeated use or the characteristics of the usage environment, the above-mentioned degree of electrical insulation will be relaxed to some extent, and the sensitivity to irradiated light will be increased to a certain degree. As an amorphous material with a
-(S+xC+-++)y(H,X) toy y is created. a-(SiXC1 rod) y on the surface of the second layer 1003
When forming the surface layer 1006 consisting of (H, , a-(Six c,
It is desirable that the temperature of the support during layer formation be strictly controlled so that -X)y(H,X)ly can be formed as desired.

In the present invention. The formation of the surface layer 1006 is carried out by selecting an appropriate range according to the method of forming the surface layer 1006 in order to effectively achieve the desired purpose, but preferably at a temperature of 20 to 400°C. The temperature is preferably 50 to 350°C, optimally 100 to 300°C.To form the surface layer 1008, delicate control of the composition ratio of atoms constituting one layer is required compared to other methods. relatively easy °
1-, etc., it is advantageous to adopt a glow radiation method or a sputtering method, but these layer forming methods can form a surface layer of 100%.
8, the discharge power during layer formation is set at a-(SIxC+-x
)y(H,X)+-v 17) It is one of the important factors that influences the characteristics.

a-(SL+C,-11)y(H,X)r having characteristics to effectively achieve the purpose of the present invention
The discharge power conditions for effectively producing -y with high productivity are preferably 10 to 100 OW, more preferably 20 to 750 W, and most preferably 50 to 650 W.

The gas pressure in the deposition chamber is preferably 0.01 to 1
Torr, preferably about 0.1-0.5 Torr.In the present invention, the ranges mentioned above are the desirable numerical ranges of the support temperature and discharge power for creating the surface layer 100B. However, these layer creation factors can be determined independently and separately, but are not specified depending on the desired characteristics.
-(StxC+-x)y(H, is desirable.

The field of carbon atoms contained in the surface layer 100B in the photoconductive member of the present invention is similar to the conditions for creating the first surface layer 1008.
Surface layer 1 that provides desired properties to achieve the object of the present invention
This is one of the important factors in the formation of 00B.

In the present invention, the number of carbon atoms contained in the surface layer 1006 is determined as desired depending on the type and characteristics of the amorphous material constituting the surface layer 1008.

That is, the general formula a-(Six Ct -X)W (
H,
From then on.

Written as r a-SilCl+ a J, however, Q <
a < 1), an amorphous material composed of silicon atoms, carbon atoms, and water J atoms (hereinafter referred to as ra-(St,
f4-b). Written as Hl −e J, however, 0 <
b, c < 1), an amorphous material composed of silicon atoms, carbon atoms, halogen atoms, and optionally hydrogen atoms (hereinafter ra-(Sia C+ -a)).

(H,X)le J, where 0 < d, e
<1).

In the present invention, the surface 51008 is a-SilC, -1
The amount of carbon atoms contained in the first surface layer 1006 is preferably IX1G' to 9Qat
owic%.

More preferably 1 to 80 atomic%, most preferably 10
It is desirable that the amount is ~75ato ic%. That is, if we use the representation of a in the previous a-Si1CI-a,
a is preferably 0.1 to 0.981199, more preferably 0.2 to 0.88, and optimally 0.25 to 0.9.

On the other hand, in the present invention, the surface layer 1008 is a-(Si,
fl:1-b)e When composed of Hl-5, the amount of carbon atoms contained in the first surface layer 100B is preferably l
Xl0' to 90 atomic%, more preferably 1 to 90 atomic%, optimally 10 to 80aLa+
It is desirable to set it to sic%. The content of hydrogen atoms is preferably 1 to 40 atomic%,
More preferably 2-35 atomic%, optimally 5-35 atomic%
The hydrogen content is preferably 30 atomic%, and the light-receiving member formed when the hydrogen content is within this range is as follows:
It can be fully applied as an excellent thing in practice.

That is, if it is expressed as a-(SrbCI-b>eH+-c).

b is preferably 0.1 to o, 5ss9s, more preferably 0.1 to 0639, optimally 0.15 to 0.9. c is preferably o, e~0.89, more preferably 0.65~
It is desirable that it be 0.98, most preferably 0.7 to 0.95.

surface! 100B is a-(StaC+-1)e(H,X
When composed of L-*, the content of carbon atoms contained in the surface F100B is preferably l
X10°3-90 atomic%, more preferably I-9
l-90 atomic%, optimally lO~80 atomic%
It is desirable that this is the case. The content of halogen atoms is preferably 1 to 20 atomic%, and the light receiving member produced when the halogen atom content is within this range can be sufficiently applied to practical applications. It is. The content of hydrogen atoms, which may be included as necessary, is preferably 19 atomic % or less, more preferably 13 atomic % or less.

■! Schi, previous a-(!lii, c+-1) a(H,X
)+-a, d, e, d is preferably 0.1-0.99999, more preferably 0.1-0.9
9, optimally 0.15-0.8, e preferably 0.8
~0.93, more preferably 0.82-0.99. It is desirable that R be between 0°85 and 0.88.

The numerical range of the layer thickness of the surface layer 100B in the present invention is one of the important factors for effectively achieving the object of the present invention.

In order to effectively achieve the object of the present invention, it can be determined as desired depending on the intended purpose.

The thickness of the first surface layer 100B also depends on the characteristics required for each layer, including the amount of carbon atoms contained in the layer and the relationship between the thicknesses of the first and second layers. It is necessary to decide as appropriate based on the desired organic relationship.

In addition, it is desirable to consider the economical aspects including productivity and mass production.

The layer thickness of the surface M100B in the present invention is preferably 0.003 to 30 scales, more preferably 0.004 to 2 scales.
It is desirable that the time be 0 μs, and optimally 0.005 to lax.

In the light receiving member 1004 of the present invention, at least the first layer (G) 1002 and/or the second layer (S
) 1003 contains a substance W (C) that controls conduction characteristics, and the layer containing the substance (C) is given desired conduction characteristics.

In the present invention, the first (F) layer (G) +002 or/and the second! +(S) The substance that governs the conduction properties contained in 1003 fi (C) is a substance! The substance (C) may be contained in the entire layer region of the layer containing the substance (C), or may be contained so as to be unevenly distributed in a part of the layer region in which the substance (C) is contained.

However, in any case, in the layer region (PN) containing the substance (C), the distribution state of the substance in the layer thickness direction is non-uniform. Clogging 1 For example, the first layer (
If the substance W (C) is to be contained in the desired area of the entire layer of layer G), the substance layer CG).

In this way, in the layer region (PN), by making the concentration of the substance (C) uneven in the layer J direction, good optical and electrical bonding is achieved at the contact interface with other layers. It can be done.

In the present invention, the first layer (G) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first layer (G).
In the case of containing the above-mentioned material JlICC), the layer region (PN) containing the above-mentioned material JlICC) is provided as an end layer region of the first layer CG), and is adjusted as appropriate each time as desired.

In the present invention, the substance (
When C) is contained, it is preferable that the substance W (C
) is desirable.

When both the first layer (G) and the second layer (S) contain a substance (C) that controls conduction properties, the substance W (C) in the first layer (G) contains It is desirable that the layer region containing the substance (C) in the second layer (S) be in contact with each other.

Further, the substance (C) contained in the first e (G) and the second W (S) is the substance (C) contained in the first layer (G) and the second layer (S).
They may be of the same type or different types, and their content may be the same or different in each layer.

However, in the present invention, if the substance (C) contained in each layer is the same type in both layers, the content in the first layer CG') may be sufficiently increased. Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics.

In the present invention, at least the first layer constituting the photoreceptive layer
By incorporating a substance (C) that controls the conduction properties into the second layer (M+CG) or/and the second layer (S), the layer region containing the substance (C) [first layer CG] or/and a part or all of the layer region of the second layer (S)] can be arbitrarily controlled as desired, but as such a substance (C), ,°
Examples of such impurities include so-called impurities in the field of hair conductors.
-Si(H,X) or/and a-SiGe(H,
For X), p-type impurities and n
Examples include n-type impurities that provide type conductivity characteristics.

Specifically, as a p-type impurity, the periodic table tjSffl
Atoms that belong to the group <'am group atoms), e.g. B (boron)
, 7Lt (aluminum), Ga (gallium), In(
Indium), rt (thallium), etc.

Particularly preferably used are B and Ga.

Examples of n-type impurities include atoms belonging to Group V of the Periodic Table (Group V atoms), such as p (phosphorus), As (arsenic J), and S.
b (antimony), Bi (bismuth), etc., and particularly preferably used are P and As.

In the present invention, the content in the layer region (PN) in which the substance (C) that controls conduction characteristics is contained is determined by the conductivity required for the layer region (PN) or (PN
) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the conduction characteristics are controlled by considering the relationship with other layer regions provided in direct contact with the layer region (P N) and the characteristics at the contact interface with the other layer regions. Substance (C
) content is selected appropriately.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer regions (P, N) is preferably 0.01 to 5XIO' atomic ppm,
More preferably 0.5-IXIO' atomic
ppm, @a, 1-5 x 103103at
It is desirable to set it as opps.

In the present invention, the content of the substance fi (C) in the layer region (PN) containing the substance (C) that controls conduction properties is preferably 30 atO tc pp or more, more preferably For example, when c> is the above-mentioned p-type impurity, the content of the photoreceptor layer is set to 50 atO*ic PP- or more, optimally 100 atO*ic PP- or more. When the free surface is charged to O polarity, injection of electrons from the support side into the photoreceptive layer can be effectively prevented, and the substance (C) to be contained can be the Qn type impurity. In this case, when the free surface of the photoreceptive layer is subjected to charging treatment 17 to e-polarity, it is possible to effectively prevent injection of holes from the support side into the photoreceptor layer.

In a case like E, as mentioned above, the layer region (PN
) in the layer region (Z) excluding the layer region (PN) contains a substance that controls the conduction characteristics of a conduction type polarity different from the conduction type polarity of the substance that governs the conduction characteristics contained in the layer region (PN). It may be contained, or it may be contained in an amount much smaller than the actual amount of a substance having the same polar conductivity type and controlling conduction characteristics contained in the layer region (PN).

In such a case, the content of the substance controlling the conduction characteristics contained in the layer region (Z) is limited to the one layer region (PN
) is suitably determined as desired depending on the polarity and content of the substance (C) contained in ), but preferably o, oot to 1001000ato ppm+w, more preferably 0.05 to 500 atomic ppm,
The optimum range is 0.1 to 200 atomic pp-.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is 3
It is desirable that it be less than 0 atomic PP.

In the present invention, when the layer region (P N) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the one layer region (Z) is as follows: Preferably, it is 30 atOfflic PP■ or less.

In the present invention, the photoreceptive layer includes a layer region containing a substance controlling conductivity having a conductivity type of one polarity and a substance controlling conductivity having a conductivity type of the other polarity. It is also possible to provide a so-called depletion layer in the contact region by directly contacting the layer region with the contact region.

Clogging 1 For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptor layer so as to be in direct contact with each other to form a so-called p7n junction. layers can be provided.

27 to 35 show typical examples of the distribution state of the material layer (C) in the layer thickness direction contained in the layer region (PN) of the light-receiving member according to the present invention. In addition, in each figure, the display of one layer thickness and concentration is shown in an extreme form because if the values are shown as they are, the differences between each figure will not be clear, and these figures are for proofreading only. I want to be understood.

As for the actual distribution, the object of the present invention can be achieved,
Ti (1≦i
≦8) or C1 (1≦i≦17), or the value obtained by multiplying the entire distribution curve by an appropriate coefficient should be selected.

In FIGS. 27 to 35, the horizontal axis shows the 1ri concentration C of the substance (C), and the vertical axis shows the layer thickness of the layer region (PN),
to is the position of the end surface of the layer region CG) on the support side.

1T indicates the position of the end face of the layer region (PM) on the side opposite to the support side, that is, the position of the layer region (PM) containing the substance (C).
), layers are formed from the 1B side toward the 1T side.

Figure 27 shows the substance (C) contained in the four-layer region (PM).
) is shown as a typical example of the distribution state of gSf in the layer thickness direction.

In FIG. 27, in an example where 1< Until then, the distribution concentration C of substance (C) is concentration C! The substance (C) is contained in the formed layer (PN) while taking a certain value.

From the level 21L+, the concentration is gradually and continuously reduced from the concentration C2 to the interface level 'RtT. At the interface position 22Lr, the distribution concentration C of the substance (C) is substantially zero.

(Here, "substantially zero" means that the amount is less than the detection limit.) Figure 28 shows that in the example shown, the contained substance (C
) The distribution concentration C gradually and continuously decreases from the Ht day to the 21tr, forming a distribution state in which the concentration C4 becomes sharp at the 11tt.

In the case of Fig. 29, from the 1st place 81 LB to the place PJL2, the distribution concentration C of germanium atoms is kept at a constant value, and gradually and continuously decreases between the 1st place 11L2 and the position Zity. 1 distribution concentration C at 11ttv
is essentially zero.

In the case of Fig. 30, the distribution concentration C of object '1I(C) is from position 1B to position 1,
Starting from C6, it is gradually and continuously decreased, and from 1st position [3], it is rapidly and continuously decreased to become substantially zero at 1st position 1ty.

In the example shown in FIG. 31, the distribution concentration C of the substance (C) is a constant value of concentration C7 between position 1 t8 and position L4, and at position 2 ttr, the concentration C of the substance (C) is constant. 1st place Z? Between t4 and 1st position, the distribution density C decreases linearly from position t4 to position 1st position.

In the example shown in FIG. 32, the distribution concentration C is at position 1.
．． From position 1 L5 to position 1.21ts, the density CB is kept at a constant value. Up to this point, the distribution state decreases linearly from the concentration C9 to the concentration CIo.

In the example shown in FIG. 33, the first place 21L8 is higher than the first place ii!
Until itt, the distribution concentration C of substance (C) is the concentration el
It is continuously decreased in a linear function from l, and reaches ambience.

In FIG. 34, the distance from position ta to position t6 is for object rJ(C); /LJ CIf C is eqz
It is numerically reduced from Cn to the concentration C1w for one hour, and the concentration is 21
An example is shown in which the concentration CI3 is kept at a constant value between the position Lr and the position Lr.

; In the example shown in Figure 7535, the distribution concentration C of the substance (C) is the concentration CI4 at the 1st position 21t8, and it decreases slowly from this concentration CI4 until it reaches the 1st position t7, and near the position t7, , is rapidly decreased and becomes the concentration CIS at the position [,.

Between the position t7 and the position Kite, the decrease is rapid at first, and then it is gradually decreased slowly until the position L
At position 8, the concentration becomes cab, and between position t8 and position ZL9, it gradually decreases until position 2t [9, C degree CI7 is reached at position 0-position [9 and position ii! 2Lt, the concentration is reduced from C 7 to substantially zero according to a curve shaped as shown in the figure.

Above, the one layer area (PM
) As described above, some of the typical examples of the distribution state of the substance (C) contained in the layer thickness direction have been explained. Substance (C) which has a high portion and has a portion where the distribution concentration C is considerably lower on the interface tT side than on the support side.
It is desirable that a distribution state of .rho.N is provided in the layer region (.rho.N).

The layer region (PM) constituting the light-receiving member in the present invention preferably has a localized region (B) containing the substance (C) at a relatively high concentration on the support side as described above. desirable.

In the present invention, the localized region (B) is
Explaining using the symbols shown in FIG. 5, it is desirable to provide it within five feet from the interface position t8.

In the present invention, the localized region (B) is located at the interface position LB.
It may be a full layer region (L) up to 5 pots thick, or it may be a part of a layer region (L).

Whether the localized region (B) is a part or all of the layer region (L) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

A substance that controls conduction properties (
C) 1 For example, the mth group atom or the v1th group! atomically introduced into the layer region (P) containing the substance (C).
To form M), when forming one layer, a starting material for introducing group M atoms or a starting material for introducing group V atoms is placed in a gaseous state in a deposition chamber in order to form each layer. It is best to introduce it together with the substance.

As a starting material for introducing such group m atoms, it is preferable to use a material that is gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. As a starting material for introducing group Ⅰ atoms, specifically for boron introduction, B2H6* BaH+
o, BSH9+ BsHu + B&H1°.

B,)I,,,Hydrogenation of B et al. HI4, etc. Ii! Basic, BF
3, and boron halides such as BCffi3°BBr3. In addition, A1α3. Gaα3, G
a((:B3)3.”C3, T1α3, etc. can also be increased.

One of the starting materials for introducing a group V atom that is effectively used in the present invention is PH for introducing a phosphorus atom.
,, Phosphorus hydride such as P2H4, PHal, PF3
.

PF5, PCl3, PCl5, PBr3
, PBr3, PI3, and other phosphorus halides. In addition, AsH3, AsF3.

AsC1,, AsBr3. AsF5. SbH3, SbF
3. 5bC15゜sbα, Bi)13, B1
1J3, B1Br3, etc. can also be mentioned as effective starting materials for introducing Group V atoms.

The germanium atoms contained in the first W (G) +002 are continuous in the layer thickness direction of the first layer (G) 1002 and on the side where the support 1001 is provided. (the surface 10 of the photoreceptive layer 1001
The first layer CG) 1002 is distributed so that it is more distributed on the support 1001 side than on the support 1001 side (CG) 05 side).
contained within.

In the light receiving member of the present invention, the first layer ′(G)
The distribution of germanium atoms contained in the layer is as described above in the layer thickness direction, and is uniformly distributed in the in-plane direction parallel to the surface of the support. desirable.

In the present invention, the second layer (G) provided on the first layer (G)
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, it can be used for light from relatively short wavelengths to relatively short wavelengths, including the visible light region. This can be used as a light-receiving member that has excellent photosensitivity to light of all wavelengths.

In addition, the distribution state of germanium atoms in the first fl (G) is such that germanium atoms are continuously distributed in the entire layer region, and the distribution concentration C of germanium atoms in the layer thickness direction increases from the support side to the second M (S), the affinity between the first layer (G) and the :tS2 layer (S) is excellent, and as will be described later, the support side By extremely increasing the distribution concentration C of germanium atoms at the edge, when a semiconductor laser or the like is used, light on the long wavelength side that is hardly absorbed by the second layer (S) can be absorbed by the first layer. Layer (G) can absorb substantially completely and can prevent interference due to reflection from the support surface.

In addition, in the light-receiving member of the present invention: Al layer (G)
Since the amorphous materials constituting the and the second W (S) each have a common constituent element of silicon atoms, they are sufficiently acidified to ensure chemical stability at the laminated interface. .

11 to 18 show typical examples of the distribution state of germanium atoms contained in the first layer (G) of the light-receiving member in the present invention in the layer thickness direction.

11 to 19, the horizontal axis shows the distribution concentration C of germanium atoms, the vertical axis shows the layer thickness of the first layer (G), and tB is the distribution concentration C of germanium atoms, and tB is the thickness of the first layer (G) on the support side. The position of the end face,
1T indicates the position of the end surface of the layer (G) on the opposite side of the support gs2, that is, the first calendar (G) containing germanium atoms.
In G), layers are formed from the tB side toward the LT side.

FIG. 11 shows a typical $1 distribution state of germanium atoms contained in the first calendar (G) in the layer thickness direction.

In the example shown in the il1 diagram, 7! of ft51 contains germanium atoms! CG) and the surface on which the first
tl from the interface position fits where the surface of W (G) contacts
Up to the position, the distribution concentration C of germanium atoms takes a constant value CI and is contained in the first layer (G) in which germanium atoms are formed. It is gradually and continuously decreased until it reaches tτ. At the interface position mLr, the distribution concentration C of germanium atoms is assumed to be 5.

In the example shown in FIG. 12, the distribution concentration C of the germanium atoms contained in the atom gradually and continuously decreases from the concentration C4 from the position □Ls to the position mLr.
A distribution state is formed such that the concentration is at .

In the case of FIG. 13, from position LB to position (,), the distribution concentration C of germanium atoms is kept at a constant value of concentration C6, and gradually and continuously decreases between the 1st position ff1tz and the position mtt, At the position [τ, the distribution concentration C is substantially zero (substantially zero here means less than the detection limit amount).

In the case of FIG. 14, the distribution concentration C of germanium atoms gradually decreases from the concentration C8 from the 2iL day to the 1st place i! In iL-d, it is substantially zero.

In the example shown in Figure 15, germanium atoms
→The distribution concentration C is a constant value of e degree C9 between the position t8 and the position t3, and the distribution concentration between the 6 position t3 and the position 1tt, which is the concentration CIO at the position □L□. C is a linear function from position □Ls to position alL
It has been reduced to r.

In the example shown in FIG. 18, the concentration C of minute 1a takes a constant value of concentration C11 from position tB to position Mta,
Position 2 from position t4! Up to lk, concentration CI from concentration C□2
The distribution state decreases linearly up to 3.

In the example shown in Fig. 17, the position Zlk is lower than the first position 21te.
Until , the distribution concentration C of germanium atoms becomes the concentration Ct
It decreases linearly from a to substantially zero.

In FIG. 18, the distribution concentration C of germanium atoms from the 1st position to the position t is linearly decreased from the concentration CIS to the concentration 016, and from the position t5 to the position 1
An example is shown in which the density is set to a constant value of '16.

In the example shown in FIG. 19, the distribution concentration C of germanium atoms is C17 at the position ILe, and the concentration C17 at the 1st position n
Until reaching 16, the concentration is decreased slowly from 017 at first, and around the position t6, it is rapidly decreased to the concentration CI8 at 21t6.

Between the position t6 and the position t7, the decrease is rapid at first, and then the decrease is slow and gradual until the position t7 is reached.
The concentration becomes cps, and between position t7 and position L8,
in a very slowly gradually decreasing position;
Between the 0 position 171te and the position 21LT leading to the C degree C2o, the concentration is reduced from C2° to substantially zero according to a curve shaped as shown in the figure.

Below-1-1 According to FIGS. 11 to 19, the first layer CG
) of the distribution state of germanium atoms contained in the layer thickness direction! ! As I explained some of the ll type examples.

In the present invention, on the support side, there is a part where the distribution concentration C of germanium atoms is high, and on the interface LT side, the germanium atom distribution has a part where the distribution concentration C is Off compared to the support side. The state provided in the first R'lCG> is '! ! Delicious.

The first W (G) constituting the light-receiving layer constituting the light-receiving member in the present invention is preferably a localized region (G) containing germanium atoms at a relatively high concentration on the support side as described above. It is desirable to have A).

In the present invention, the localized region (A) is shown in FIGS. 11 to 19.
To explain using the symbols shown in the figure, 5
It is desirable that it be provided within μ.

In the present invention, the localized region (A) is located at the interface position L8.
It may be a full layer area (one layer) up to a final thickness of 5, or it may be a part of a single layer area (LT).

Whether the localized region (A) is a part or all of the layer region (Lr) is appropriately determined according to the characteristics required of the light-receiving layer to be formed.

The localized region (A) has a distribution state of germanium atoms contained therein in the layer thickness direction such that the maximum distribution concentration C*aX of germanium atoms is preferably +000 atomic PP@11 with respect to silicon atoms. More preferably 5000 atomic ppm or more, optimally l×
It is desirable that the layer be formed in such a manner that it can be distributed in a manner such that 10'ato/1cpp intestine is used.

That is, in the present invention, the first layer (G) containing germanium atoms has a layer thickness of 5 layers or less from the support side (
The maximum value Cmax of the distribution concentration in the layer region with a thickness of 5 mm from
It is preferable that it be formed so that there is.

In the present invention, the amount of hydrogen atoms (H) or halogen atoms (X) or the amounts of hydrogen atoms and halogen atoms contained in the second W (S) constituting the photoreceptive layer to be formed The sum (H+X) is preferably 1 to 40 atomic%
, more preferably 5-30 atomic%, optimally 5
It is desirable that the content be 25 atomic%.

In the present invention, the content of germanium atoms contained in the first calendar (G) is appropriately determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to 9. 5X 10!111 tomic ppm,
More preferably 100-8 x 10S105ato
It is desirable to set it as ppm.

In the present invention, the layer thickness of the first layer CG) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light-receiving member to ensure that the desired properties are fully imparted to the light-receiving member.

In the present invention, the layer thickness T of the first calendar (G) is preferably 30A to 50IL, more preferably 40A to 40IL.
The optimum size is 50A to 30 pots.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 3
It is desirable to have an end of 0 IL, more preferably an end of 1 to 80 IL, most preferably an end of 2 to 50 IL.

The sum (T, +T) of the layer thickness T of the first layer (CG) and the layer thickness T of the second layer (S) is the characteristic required for both layer regions and the characteristic required for the entire photoreceptive layer. Based on the organic relationship between the properties and the layer design of the light-receiving member, as desired,
To be determined accordingly.

In the light-receiving member of unreleased 1, ([OLT) of 1.
The numerical range is preferably 1 to 100, more preferably 1 to 80, and most preferably 2 to 50.

More preferred implementation of the invention! In the case of the above-mentioned layer thickness (8) and layer thickness (T), preferably T, / T
When satisfying the relationship ≦1, it is desirable that appropriate numerical values be selected for each.

In selecting the numerical values of layer thickness T8 and layer thickness T in the above case, it is more preferable that Te/T≦0.8. Optimally, it is desirable that the layer thickness T and the value of the layer thickness T be determined so that the relationship T, /T≦Q-8 is satisfied.

In the present invention, the first! The content of germanium atoms contained in (G) is l x 10Sato105a
In the case where the thickness is more than 0, it is desirable that the layer thickness B of the first W CG) be made quite thin, preferably 30
g or less, more preferably 25#L or less, optimally 20u
It is desirable that it be less than L.

In wood 1, the first layer (G) constituting the photoreceptive layer
Specific examples of the halogen atom (X) contained in the second layer (S) if necessary include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly suitable. It can be mentioned as.

In the present invention, in order to form the first M (G) composed of a-5iGs (H, For example, by glow discharge method, a-(, a-SiGe
In order to form the first calendar (G) composed of (H,
Raw material gas for supply, raw material gas for Ge supply that can supply germanium atoms (Gs), and hydrogen atoms (H
) A raw material gas for introduction or/and a raw material gas for introducing halogen atoms (x) is introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. A-5iGe (H,X
), or if it is formed by sputtering.

For example, using two targets, one made of Si and the other made of Ge, in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, or a combination of Si and Ge. When sputtering using mixed targets.

Hydrogen atom (H) or/and halogen atom (
X) The gas required for jF1 may be introduced into the deposition chamber for sputtering.

Examples of substances that can be used as raw material gas for supplying Si used in the present invention include SiH4 and 5i2H6.

Silicon hydride (silanes) in a gaseous state or that can be gasified, such as Si3H8+ SiJ+o, can be effectively used, especially in terms of ease of handling during N production work, good Si supply efficiency, etc. SiH4,5i21 (6.

are listed as preferred.

Substances that can be used as raw material gas for supplying Ge include:
I(4, Ge2H6, Ge3HB, GeaHHo+
Ge5) 1121Ge,,)l 141 Ge? Hu
+ + GenHln + Geayo and other germanium hydrides in a gaseous state or that can be gasified are mentioned as being effectively used, especially in terms of ease of handling during calendar creation work, good Ge supply efficiency, etc.

Preferred examples include GeH,1, Ge2H6, Ge3)16.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, and halogen-substituted silane derivatives. Preferred examples include halogen compounds that can be converted into

Furthermore, silicon atoms and halogen atoms constitute fi
It is in a gaseous state or can be gasified. Water-leaching silicon compounds containing halogen atoms can also be mentioned as effective in the present invention.

Halogen compounds that can be suitably used in the present invention include fluorine, chlorine, and bromine in fJe form.

Iodine halogen gas, BrF, αF, αF3. BrF
5゜B rF3 + [F3, IF t + Iα,
Examples include interhalogen compounds such as IBr.

Examples of silicon compounds containing a halogen atom, so-called silane derivatives substituted with r1 by a halogen atom, include, for example, SiF4. Si2F6, Siα4, SiBr
Preferred examples include silicon halides such as No. 4.

When a silicon compound containing such a halogen atom is employed to form a characteristic pre-receiving VG member of the present invention by a glow discharge method, a raw material gas that can supply 51 along with a raw material gas for supplying Ge is used. a-5rGe containing halogen atoms on a desired support without using silicon hydride gas
It is possible to form a first layer (G) consisting of:

According to the glow discharge method, the first layer containing halogen atoms (
When creating G), basically, for example, silicon halide, which will be the feed gas for JFSI supply, germanium hydride, which will be the raw material gas for Ge supply, and gases such as Ar, H2, He, etc. are mixed in a predetermined manner. The gases are introduced into the deposition chamber in which the first layer (G) is to be formed in such a manner as to cause a glow discharge to form a plasma atmosphere of these gases onto the desired support. However, in order to more easily control the introduction ratio of hydrogen atoms, hydrogen gas or a silicon compound gas containing hydrogen atoms may be added to these gases. They may also be mixed in desired amounts to form a layer.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

In order to form the first layer (G) made of a-9iGe (H, Using two targets or a target made of Si and Ge, this is sputtered in a desired gas plasma atmosphere, and in the case of the ion blating method, for example,
Polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are each housed in a vapor deposition port as an evaporation source, and the evaporation sources are heated and evaporated by a resistance heating method, an electron beam method (EB method), etc. to perform flying evaporation. You can experience the joy of putting something in a gas plasma atmosphere with drops of water.

At this time, in order to introduce \\\\ \ \ \ \ \ \ \ \\ \\ \ \ \ \ \ \ atom into the layer formed in either case of the sputtering method or the ion blasting method, the \\\\\ \ \\ \\ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ \ , , , , , , , , , , , , , , , , , etc.) It is sufficient to introduce the gas into the deposition chamber to form a plasma atmosphere of the gas.

Further, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, for example, F2. Or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or /\halogen-containing silicon compounds are effectively used as the raw material gas for introducing halogen atoms.
In addition, HF, Hα, HBr.

Hydrogen halides such as HI, SiH2F2, SiH
25.

SiH2α2, 5rHC11, 5iH2Br2, 5
Norogen-substituted water silicon hydride such as iHBr3, and GeH
F3, GeF2F2, GeH3F.

G4HCl3, GeF2α2, GaH3
α, Ge1(Bri +GeH2Br2,
GsH3Br, GeHI3, GsH212, Ge
Halides containing water aX atoms as one of the constituent elements, such as hydrogenated germanium halides such as H31, GeF*+Ga
αa, GeBr4, Ggr4. GeF2.
Geα2, GeBr2.

Gaseous or gasifiable substances such as germanium halides such as Ga12 can also be mentioned as useful starting materials for the formation of the first layer CG).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce a hydrogen atom into the first calendar (G),
In addition to the above, F2. Or 5iHa, 5i2Ha.

Germanium or a germanium compound for supplying Ge to silicon hydride such as SisHe + 5jJl+o;
Or, G eH4+ Ge2H6r Ge3HB +
Ge4H+o * Ge5H121Ge6)1 +a
, GetHt6+ Gea to + Gap 2
This can also be achieved by causing germanium hydride such as G and silicon or a silicon compound for supplying Si to coexist in the deposition chamber to generate a discharge.

In a preferred example of the present invention, hydrogen atoms (H) contained in the first M9 (G) constituting the photoreceptive layer to be formed
The amount of halogen atoms (X) or the sum of the amounts of hydrogen atoms and halogen atoms (H+X) is preferably 0.01 to 4.
0 atomaric%, more preferably 0.05 to 30 a
tomic%, preferably 0.1 to 25 ata layer ic%.

To control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and hydrogen atoms (H) or halogen atoms It is only necessary to control the introduction of the starting material used for containing (X) into the salt m apparatus system, the discharge force, etc.

In the present invention, the second! composed of a-Si (H,X)! To form fI(S), the first
from among the starting materials CI) for the formation of layer (G).

A case where the first layer (G) is formed using a starting material (starting material for forming the second layer (S) (TI)) excluding the starting material that becomes the raw material gas for supplying Ge; It can be carried out according to similar methods and conditions.

That is, in the present invention, a-! lli (I(,X)
The second layer (S) is formed by a vacuum deposition method that utilizes a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion blating method. a-9i(H,X
) In order to form the second layer (S) consisting of the above-mentioned silicon atoms (St), basically hydrogen atoms (H) are added as needed along with the raw material gas for supplying Si that can supply the silicon atoms (St) described above. A source gas for introduction and/or for introduction of halogen atoms (X) is introduced into a deposition chamber whose interior can be reduced in pressure.

A glow discharge is generated in the deposition chamber, and a-5i (H,
Alternatively, if the layer is formed by a sputtering method, a layer composed of Si may be formed in an atmosphere of an inert gas such as Ar or He, or a mixed gas based on these gases. When sputtering the sputtering target, a gas for introducing hydrogen atoms (H) and/or halogen atoms/-(X) may be introduced into the deposition chamber for sputtering.

In the light-receiving member of the present invention, for the purpose of increasing photosensitivity and dark resistance, and further improving the adhesion between the support and the light-receiving layer, contains at least one kind of atom selected from ugly atoms, carbon atoms, and nitrogen atoms in a uniform or non-uniform distribution state in the layer thickness direction. Such atoms (OCN) contained in the photoreceptive layer φ are
It may be contained in the entire layer region of the light-receiving layer, or it may be contained unevenly in only a part of the layer region of the light-receiving layer.

Atoms (OCN) (7) The distribution state is minute mW degrees C (OCN
) is preferably uniform in a plane parallel to the surface of the support of the photoreceptive layer.
When the main purpose is to improve photosensitivity and dark resistance, the layer region (0ON) containing 11:N) is provided so as to occupy the entire layer region of the light-receiving layer, and the layer region (0ON) containing N When the main purpose is to strengthen the adhesion between the photoreceptive layer and the photoreceptive layer, it is provided so as to occupy the end layer region of the photoreceptive layer on the side of the support.

In the former case, the atoms (O
It is desirable that the content of CR) be relatively low in order to maintain high photosensitivity, and in the latter case, relatively high in order to ensure enhanced adhesion to the support.

In the present invention, a layer region (OCN
) is the content of atoms (ocN) contained in the layer region (0
(:N) itself or the layer region (0(
:N) is provided in contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, when another layer region is provided in direct contact with the layer region (OCN), the relationship with the characteristics of the other layer region and the characteristics at the contact interface with the other layer region. is also taken into account,
The content of atoms (OCN) is selected appropriately.

The amount of atoms (0(:N)) contained in the layer region (0(:N) is determined as desired depending on the characteristics required of the light receiving member to be formed, but preferably 0 .00
1 to 50 atomic%, more preferably 0.002
~40 atomic%, optimally 0.003-30at
It is desirable to set it to owic%.

In the uninvention, layer regions (0 to 11) occupy the entire area of the photoreceptive layer or even if they do not occupy the entire area of the photoreceptive layer.
When the ratio of the layer thickness TO of the layer region (OCN) to the layer thickness T of the photoreceptive layer is sufficiently large, the upper limit of the content of atoms (OCN) contained in the layer region (OCN) is the above value. It is desirable that the amount be sufficiently reduced.

In the case of the present invention, when the ratio of the layer thickness TO of the layer region (OCN) to the layer thickness T of the photoreceptive layer is two-fifths or more, in the layer region (0ON) Contained I
The upper limit of fJ,r(OCN) is preferably 30a
tosic% or less, more preferably 20 atomic%
Hereinafter, it is optimally desirable to set it to 1Oatomic% or less.

According to a preferred embodiment of the invention, atoms (OCR) are preferably present at least in said first calendar, which is provided directly on the support. By containing atoms (OCN) in the end layer region,
It is possible to strengthen the adhesion between the support and the light-receiving layer.

Furthermore, in the case of nitrogen atoms, for example, in the coexistence with boron atoms, it is possible to further improve dark resistance and ensure high photosensitivity, so it is desirable to contain a desired amount in the photoreceptive layer.

In addition, multiple types of these atoms (OCN) may be contained in the photoreceptive layer. For example, in the first Ly) layer,
Oxygen atoms may be contained or, for example, oxygen atoms and nitrogen atoms may be contained together in the same layer region.

43 to 51 show an element 1' (OCN) contained in the layer region (QC:N) of the light-receiving member in the present invention.
) is shown as a typical example where the distribution J in the layer thickness direction is non-uniform.

In Figures 43 to 5+, the horizontal axis is atoms (OCN)
The vertical axis indicates the layer thickness of the layer region (0021), the digit indicates the position of the end face of the layer region (OCN) on the support side, and the digit indicates the layer region (OCN) on the opposite side to the support side. In other words, the layer region (0ON) in which atoms (OCN) are contained is formed from the tB side toward the 1T side.

FIG. 43 shows atoms (
NN of OGN), the first one when the distribution state of the direction is non-uniform.
A typical example is shown.

In the example shown in FIG. 43, the surface where the layer region (OCN) containing atoms (0ON) is formed and the layer region (Of
From the interface position ILT where it contacts the surface of l;
Contained in
It is gradually and continuously decreased until it reaches itt. At the interface position, the distribution concentration C of the original F(ocN) is taken to be the concentration itself.

In the example shown in FIG. 44, the contained atoms (O
The distribution density C of CX) gradually and continuously decreases from the density C1 until it reaches the position g1tτ from the position fits, forming a distribution state such that the concentration reaches the concentration et al at the position g1tτ.

In the case of Fig. 45, the distribution concentration C of atoms (OCN) from the 1st place ff1ts to the 21k place is a constant value based on the concentration C, and gradually and continuously decreases between the place Rh and the place fity. In the 1st place air, the 1 distribution source degree C is substantially zero (substantially zero here means the case where it is less than the detection limit amount).

In the case of Fig. 4e, the distribution concentration C of atoms (OCN) gradually decreases continuously from the concentration C8 from position 22[B to position D, and becomes substantially zero at position 21tt. ing.

In the example shown in FIG. 47, the distribution concentration C of atoms (OCN) is a constant value of concentration C9 between position Rts and position tlh, and from position L3 onwards! Concentration C up to ILT
9, it decreases linearly by 5 clas so as to reach substantially zero.

In the example shown in FIG. 48, the distribution concentration C is at position 21
LL! A constant value of the concentration C is taken up to the point a to ta,
From position t4 to position 1, the concentration is C13 rather than the concentration CI2.
It is said that the distribution state decreases in a linear function until .

In the example shown in Figure 48, from the 1st place 11La to the 11L
Until reaching y, the concentration C of atoms (Oll:N) decreases linearly from the concentration CI4 to substantially zero.

In FIG. 50, from the 1st position ZtLe to the position aits, the distribution concentration C of atoms (OCN) gradually decreases continuously from the concentration cps to the position C16, and between the position ZtLs and the position tT, An example in which the concentration CI6 is set to a constant value is shown.

In the example shown in FIG. 51, the distribution concentration C of the atom (QC8) is the concentration C17 at the 1st position j'i La, and is gradually decreased from this concentration Cat until it reaches the 1st position ZZk, and becomes E6. In the vicinity of the position Zk, the concentration decreases rapidly and becomes the concentration G11l at the position Zk.

Between position t6 and position L7, the concentration decreases rapidly at first, and then gradually decreases to CP9 at position 1, and between position 1 and position 11ts, the concentration is extremely low. At t8, the concentration C is slowly and gradually decreased.
Between the zero position t8 leading to ZO and the position D, the concentration C
It is decreased according to a curve shaped as shown in the figure so that it becomes substantially zero from tO.

Above, 1M area (00%) according to Figures 43 to 51
As explained in some typical examples of the case where the distribution state of the atoms (OCR) contained in the layer is non-uniform in the layer thickness direction, in the final step (2), the atoms (OCW) are It has a part with a high distribution concentration C, and on the interface 1T side,
The distribution concentration C is such that the distribution state of atoms (OCN) has a portion that is considerably lower than that on the support side.
).

As described above, the layer region (OCN) containing atoms (OCN) has a localized region (B) containing atoms (011:N) at a relatively high concentration on the support side. It is desirable to provide a light-receiving layer, and in this case, it is possible to further improve the adhesion between the support layer and the light-receiving layer.

The localized region (B) is desirably provided within 5p from the interface position RLi+, if explained using the symbols shown in FIGS. 43 to 51.

In the present invention, the localized region (B) is located at the interface position t
It may be the entire region (LT) from a to 5#L thick, or it may be a part of the one-layer region (Lr).

Whether the localized region (B) is a part or all of the layer region (LT) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region (B) has a distribution state of atoms (OCN) contained therein in the layer thickness direction such that the maximum value Cmax of the atomic (OCN) distribution concentration C is preferably 500ato+uc p
It is desirable that the layer be formed in such a manner that it can be distributed in a layer of pm or more, more preferably 800 atom+c ppm or more, and -@week, 1000 atom sc pp layer or more.

That is, in the present invention, the layer region (OCN) containing atoms (OCN) has a layer thickness of 5p or less from the support side (
The maximum concentration of molecules a is C in the layer region with a final thickness of 5 from Lm.
It is desirable to form it so that j large (/i Csat exists).

In the present invention, when the layer region (011:N) is provided so as to occupy a part of the layer region of the photoreceptive layer, the layer region (011:N)
It is desirable to form a distribution state of atoms (OCR) in the layer thickness direction so that the refractive index changes gradually at the interface between the ON) and other layer regions.

By doing so, it is possible to prevent the light incident on the photoreceptive layer from being reflected at the layer contact interface, and to more effectively prevent the appearance of interference fringes.

Also, the change line of the distribution concentration C of atoms (OCN) in the layer region (OCN) is a point that gives a smooth refractive index change.

It is desirable to have continuous and gradual changes.

From this point, the atoms (OC
N) is preferably contained in the layer region (011:N).

In the present invention, in order to provide a six-layer region (OCN) containing atoms (OCN) in the photoreceptive layer, the starting material for introducing atoms (00%) is added to the above-mentioned photoreceptor when forming the photoreceptor layer. It may be used as the starting material for forming the receptor layer and may be contained in the formed layer while controlling its amount.

When the glow discharge method is used to form the layer region (OCN), the starting material for introducing atoms (OCTl) into the starting materials for forming the photoreceptive layer selected as desired from the above-mentioned starting materials for forming the photoreceptive layer. Most of the gaseous substances whose constituent atoms are at least atoms (OCN) or gasified substances that can be gasified are used.

Specifically, for example, oxygen (Ox), ozone (03)-nitrogen (NO), nitrogen dioxide (NO2), -nitrogen dioxide (N20), nitrogen oxide (NtOs), nitrogen tetroxide ( N, 0.), mini nitrogen oxide (N205), nitrogen trioxide (803), 1 whose constituent atoms are silicon atom (St), oxygen atom (0), and hydrogen atom (H), for example, disiloxane (H3! 1iiO9iH3), lower cycloxanes such as tricycloxane (H3S+O3+H2O5iH3), meta(CH4), meta7(C2
)16), propane (c3H@), n-butane (n-
Cm HIo ), saturated hydrocarbons having 1 to 5 carbon atoms such as pentane (C5H12), ethylene (C2H4), propylene (C3H6), butene-1(Ca)I@).

butene-2CCaHs), inbutylene (CsH@),
Ethylene hydrocarbons with 2 to 5 carbon atoms such as pentene (CsH+o), 2 to 4 carbon atoms such as acetylene (C2M2), methylacetylene (CzHa), butyne (Cm H6), etc.
of acetylenic hydrocarbons, nitrogen (N2), ammonia (
NH3), hydrazine (H2NNH2), 7
Hydrogen dilide (HN3), ammonium azide (N&Ns
), nitrogen trifluoride (F3N), nitrogen tetrafluoride (F4N), etc.

In the case of the sputtering method, in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, the starting materials for the introduction of 1M molecules (QC) are 5i02.5i3Na as solidified starting materials. , carbon bra.

There are many examples. These are used as sputtering targets together with targets such as Si.

In the present invention, when forming the photoreceptive layer, atoms (OCN
) is provided, the IO concentration C is changed in the layer thickness direction by the amount of atoms (OCN) contained in the layer region (0ON) to obtain the desired distribution in the layer thickness direction. condition m
Layer region (OCN) with (dapthprofile)
) in the case of glow discharge, one distribution concentration C
° of the starting material for the introduction of the atom (OCN) to be changed
This is accomplished by introducing a gas into the deposition chamber while appropriately varying the gas flow rate according to a desired rate of change curve.

For example, by some commonly used method, such as manually or by an externally driven motor, the opening of a predetermined needle valve installed in the middle of the gas flow system may be temporarily changed; at this time, the rate of change in flow rate does not have to be linear, and the flow rate can be controlled in accordance with a pre-designed change rate curve using a muff, for example, to obtain a desired content rate curve.

When forming the layer region (QC) by sputtering, the desired distribution of atoms (OCN) in the layer thickness direction is obtained by changing the distribution concentration C of the IK particles (OCN) in the layer thickness direction. To form a depth profile.

The third method is to use the starting material for introducing atoms in a gaseous state, and to change the gas flow rate when introducing the gas into the deposition atmosphere as desired, as in the case of the glow discharge method. . Second, if a sputtering target is used, for example, a mixed target of Si and 5i02, the mixing ratio of Si and 5i02 should be varied in advance in the layer thickness direction of the target. This is done by putting it in place.

The support used in the present invention may be electrically conductive or electrically insulating.
For example, NiCr, stainless steel, M, Cr, No,
Au, Wb, Ta, V, Ti, Pt, Pd
Metals such as these or alloys thereof can be mentioned.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. Ru. These electrically insulating supports preferably include at least one
It is desirable that the surface of the material is conductively treated, and that another layer is provided on the side of the conductively treated surface.

For example, if it is glass, NiCr, M,
Cr, No, Au, Ir, Wb, Ta, V
, Ti, Pt, Pd.

1!1203, 5+02. ITO (In203 +
5n02), etc., or if it is a synthetic resin film such as a polyester film, NiCr, /u, Ag, P
b, Zn, Xi, Au, Cr.

A thin film of metal such as No, Ir, Nb, Ta, V, Ti, ρ, etc. is provided on the surface by vacuum A-deposition, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal. conductivity is imparted to the The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light receiving member 1004 in FIG. 10 may be used as a light receiving member for electrophotography. In the case of continuous high-speed copying, it is preferable to use an endless belt or cylindrical shape.The thickness of the support is determined as appropriate so that the desired light-receiving member is formed. When ++174 properties are required as a light-receiving member, the thickness is made as thin as possible within a range that allows the function as a support to be fully exhibited. However, in such cases, there are issues with the manufacturing and handling of the support.

From the point of view of functional strength, it is preferably 10p or more.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 20 shows an example of a light-receiving member manufacturing apparatus.

In the figure, gas cylinders 2002 to 200B are sealed with raw material gas for forming the light-receiving member of the present invention.
ssa% (hereinafter abbreviated as 5iHs) cylinder, 2003
is GIH4 gas (purity 11L1199%, hereinafter referred to as GeH4
) cylinder, 2004 is No gas (purity 1111
．． 9911%, hereinafter abbreviated as No) cylinder, 2005 is B, H6 gas (purity 9LI3119) stacked with H2.
%, hereinafter abbreviated as 82 Hs/H2) cylinder.

2006 is a H2 gas (purity H, 91111%) cylinder.

In order to flow these gases into the reaction chamber 2001, valves 2022 to 2026 of gas cylinders 2002 to 2006,
Recognizing that the leak valve 2035 is closed,
or.

Inflow valve 2012~201st, Outflow valve 2017~
2021, confirm that the auxiliary valves 2032 and 2033 are open, and first open the main valve 2034 to evacuate the reaction chamber 2001 and each gas pipe. When it reaches °@tarr, auxiliary valve 2032.2033, outflow valve 20
Close 17-2021.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037h, 5i) from the gas cylinder 2002)
1a gas, Ge from gas cylinder 2003) 1. Gas, No gas from gas cylinder 2004, s2H from gas cylinder 2005.

/ Ht gas, H2 gas from 200B valve 2022
．． 2023°2024, 2025.202B and outlet pressure gauge 2027°2G28.2029.2030.
Adjust the pressure of 2031 to 1 Kg/am and open the inlet valve 2.
012.2013.2014.2015.2018 Gradually open the mass flow controller 20G? .

2008, 2003, 2010, and 2011, respectively. Subsequently, the outflow valve 2017.201B, 2
019,202G.

λ 2021 and auxiliary valves 2032 and 2033 are gradually opened to allow the respective gases to flow into the reaction chamber 2001. At this time, the outflow valve 201? ,
2018.2018°2020, 2021 adjusted,
In addition, while checking the reading on the vacuum gauge 2038, the pressure in the main valve 2038 is adjusted so that the pressure inside the reaction chamber 2001 becomes the desired level.
Adjust the aperture. After confirming that the temperature of the base 203'7 is set to a temperature in the range of 50 to 400°C by the heating heater 2038, the power source 2040 is set to the desired power to generate glow discharge in the reaction chamber 2001. At the same time, according to a pre-designed rate of change curve, the flow rate of the eH4 gas and the flow rate of the gas are controlled manually or by an externally driven motor, etc., at the valve 2.
The concentration of germanium atoms and boron atoms contained in the formed layer is controlled by temporarily changing the opening of 018.2020.

The glow discharge is maintained for a desired time in the manner described above to form the first calendar (G) on the base 2037 to a desired layer thickness. First to the desired layer thickness! At the stage when (G) is formed, the first glow discharge is maintained for the desired time according to the same conditions and procedures except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary. A second layer (G) containing substantially no germanium atoms! (S
) can be formed.

In addition, each layer of the first layer (G) and the second layer (S) includes
By appropriately opening and closing the outflow valve 2018 or 2020, it is possible to contain or not contain oxygen atoms or boron atoms, or to contain oxygen atoms or 41J atoms only in a partial layer region of each layer. In addition, when nitrogen atoms or carbon atoms are contained in the layer instead of a atoms, the layer formation may be performed by replacing the No gas in the gas cylinder 2004 with, for example, NH3 gas or CH gas, or , of gas used! If you want to increase the amount of type i, you can add the desired gas cylinder and perform layer formation in the same way.During the 0 layer formation, the base 2037 is rotated at a constant speed by the motor 203B to ensure uniform layer formation. It is desirable to let them do so.

Finally, after forming the second layer (S), 1, for example, 200B
Put the hydrogen (B2) gas cylinder into the methane (C) 14) gas cylinder and put it in 4111, mass flow, and low controller 2.
By maintaining the glow discharge for the desired time according to similar conditions and procedures except that 007 and 2011 are set to predetermined flow rates, a surface formed mainly from silicon atoms and carbon atoms on the second W(S) is generated. layers can be formed.

When the surface layer mainly formed from silicon atoms and carbon atoms is formed by sputtering.

For example, a 2008 hydrogen (B2) gas cylinder can be replaced with argon (
^r) Replace with a gas cylinder, clean the deposition apparatus, and spread a sputtering target made of Si and a sputtering target made of graphite over the cathode electrode so that the desired area ratio is achieved. After that, the material formed up to the second M (S) is placed in the device, the pressure is reduced, and argon gas is introduced to generate glow discharge and sputter the surface layer material to form the surface layer to the desired thickness. do.

〔Example〕

An example will be described below.

Example 1 M support (length L) 357m5+, outer diameter (r
) 80■) was machined with a lathe under the conditions shown in Tables 1a (B) to (E) to obtain the surface properties shown in FIG. 21. The symbols B-H representing the surface conditions of the support shown in the table below correspond to CB) to (E) in Table 1a, respectively.

Next, under the conditions shown in Table 1, using the film deposition apparatus shown in FIG. 20, a-Si based electrophotographic light-receiving members were produced according to predetermined operating procedures (Samples Nos. 101 to 104).
.

Note that the first layer is GeH4, 5iHa, B2H6
/Ht gas flow rate as shown in Figs. 22 and 38 using the mass flow controller 2007.
2008 and 2010 on computer (HP9845
B). Further, the surface layer formed mainly of silicon atoms and carbon atoms was deposited in a first order manner. That is, after depositing the second layer, C
H4 gas flow rate is 5L) Flow rate ratio is 5 to I4 gas flow rate
A surface layer was formed by setting a mass flow controller corresponding to each gas so that illn/CH4=1/30, and generating a glow discharge by setting high frequency power to 3oow.

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 2 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure device W1 (laser light wavelength: 780 nm, spot diameter: 80 mm) shown in FIG. 26, and then developed and transferred to obtain images. No interference fringes were observed in any of the images of sample Nos. 101-104, which were sufficient for practical use.

Example 2 M support (length L) 357+ms, diameter (T
80 m5) was machined using a gJ machine to obtain the surface properties shown in Tables 1a (B) to (E).

Next, under the conditions shown in Table 1, an aSi-based electrophotographic light-receiving member was produced according to various operating procedures using a film deposition apparatus shown in m20 (sample No., 201 to 200°; the first layer was Gs). +4, S+H4, 871%, / 117
The flow of each piece of waste should be as shown in Figures 23 and 37.

Mass flow controller 200? , 2008 and 20
1O was controlled by a computer (HP9845B).

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 3 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 2e (laser light wavelength: 780 I, spot diameter: 80 u), and then developed and transferred to obtain an image. No interference fringe pattern was observed in any of the images of sample Nos. 201 to 204, which were sufficient for practical use.

Example 3 M support (length L) 357 mm, B! (r
) 80 mm) were machined on a lathe to the surface properties shown in Table 1a CB) to (E).

Next, in the same manner as in Example 1 except that the conditions shown in Table 4 were used, a-3i electrophotographic light-receiving members were fabricated using the film deposition apparatus shown in FIG. 20 according to various operating procedures (sample No, 301-304).

Note that the first layer is Ge)In, SiH4, B2H
6/ B2 f) Adjust the mass flow controller 2007 so that the flow rate of each gas is as shown in Figures 24 and 38.
．． 2008 and 2010 on computer (HP1184
5B).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 5 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 scales), and then developed and transferred to obtain images. No interference fringe pattern was observed in any of the images of sample Nos. 301 to 3G4, which were sufficient for practical use.

Example 4 M support (length L) 357 mm, diameter (r)
80 m5) was processed using an Lt board to obtain the surface properties shown in Tables 1a (B) to (E).

Next, under the conditions shown in Table 4, a-9i-based main electrophotographic photoreceptive materials were produced using the film deposition apparatus shown in FIG. 20 according to various operating procedures (trial numbers 401 to 404).

In addition, the first layer is GeH4, SiH4, 2H6/H
2. Adjust the flow rate of each gas as shown in Figure 25 and Figure 3854.1, Mass Flow Controller 2007.200
8 and 2010 were controlled by a computer (HPI] 845B).

When the layer PI of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 6 were obtained.

Regarding these electrophotographic light-receiving members, an image exposure device shown in FIG. 26 is used! Image exposure was carried out using (laser light wavelength: 780 ns, spot diameter: 80 ns), which was developed and transferred to obtain an image. No interference fringe pattern was observed in any of the images of sample Nos. 401 to 404, which were sufficient for practical use.

Example 5 M support (length L) 357 mm, diameter (r)
80 mm) was machined with a lathe to give the surface properties as shown in Tables 1a (B) to (E').

Next, in the same manner as in Example 1 except that the conditions shown in Table 7 were used, a-Si based electrophotographic light-receiving members were produced in accordance with various operations rπ1 using the film deposition apparatus shown in FIG. Sample No. 501-504).

The first layer and the A layer are GeH4,5i)t4,8
286/) 12 so that the flow rate of each gas becomes as shown in Fig. 40, using the mass flow controller 2007,
08 and 2010 were controlled by a computer (HP9845B).

The thickness of each layer of the light-receiving member produced in this way is determined by electronic measurement. When measured with AW1tj1, the results shown in Table 8 were obtained.

Regarding these electrophotographic light-receiving members, the markings shown in FIG.
No interference fringe pattern was observed in the 0 image obtained by performing image exposure with a spot diameter of 80 m and a spot diameter of 80 mm, which was then developed and transferred, and was sufficient for practical use.

Example 6 Super support body (length L) 357mm, diameter (r)
8G++uw) was processed with L'Nm to the surface properties shown in Table 1a CB) to (E).

Next, in the same manner as in Example 1 except that the conditions shown in Table 9 were used, various operations were performed using the film deposition apparatus shown in FIG. (Sample No., 601 to 600°, the first layer and A5
The mass controller 200 controls the flow rate of each gas of GeH4,5iHa and B2'H6/B2 to be as shown in Fig. 41. , 2008 and 2010 were controlled by a computer (MP9845B).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electronic WJ microscope, the results shown in Table 10 were obtained.

These light-receiving members for electrophotography were subjected to image exposure using the image exposure device shown in FIG. 28 (laser light wavelength: 780 nm, spot diameter: 80 mm), which was then developed and transferred to obtain an image. No interference fringe pattern was observed, and the result was sufficient for practical use.

Example 7 '-M support (length L) 357s+m, diameter (r) 80mg
+) was processed with a lathe to give the surface properties as shown in Table 1a CB) to (E).

Next, in the same manner as in Example 1 except that the conditions shown in Table 11 were used, an a-Si based electrophotographic light-receiving member was produced according to various operating procedures using the film deposition M apparatus shown in FIG.
Sample) io, 701-704).

Note that the first layer and the A layer are GaHa, SrH* *
Adjust the mass flow controller 2007.200 so that the flow rate of each B2 Ha/H2 gas is as shown in Figure 42.
8 and 2010 were controlled by a computer () IpH845B).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 12 were obtained.

These electrophotographic moonlight-required members were subjected to image exposure using an image exposure device ff1 (laser light wavelength 7801 mm, spot diameter 110 u) shown in FIG. 26, and then developed and transferred to obtain images. Sample No.? No interference fringe pattern was observed in any of the images 01 to 704, which were sufficient for practical use.

Example 8 A-9i was produced under the same conditions and procedures as in Example 1 except that the No gas used in Example 1 was changed to NH gas.
A light-receiving material for main electrophotography was prepared (sample No. 801).
~804).

Regarding these electrophotographic light-receiving members, an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm) is used.

Image exposure was carried out with a spot diameter of 80 mm, and the image was developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of sample Nos. 801 to 804, which were sufficient for practical use.

Example 9 A-9i was produced under the same conditions and procedures as in Example 1 except that the No gas used in Example 1 was changed to CH gas.
A light-receiving material for electrophotography was prepared (sample No. 901).
N904).

Regarding these electrophotographic light receiving members, No. 211r14
Image exposure shown in! * Setting (wavelength of laser light? 80n scale,
Image exposure was performed with a spot diameter of 80 μ), and the image was developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of sample No. 801-1104, and the images were sufficient for practical use.

Example 1O A-9i was carried out under the same conditions and procedures as in Example 3 except that the NH3 gas used in Example 3 was changed to No gas.
A photoreceptive member for system electrophotography was prepared (sample No. 10
01~+004).

Image exposure shown in FIG. 28 for these electrophotographic light-receiving members! (Laser light wavelength 780 nm.

Image exposure was performed with a spot diameter of 80 mm), and the image was developed and transferred C to obtain an image.

No interference fringe pattern was observed in any of the images of sample Nos. 1001-1004, which were sufficient for practical use.

Example 11 A-
A Si-based electrophotographic light-receiving member was produced (sample No. 1
101-1104).

Regarding these light-receiving members for electrophotography, the image exposure apparatus shown in FIG. 26 (laser light wavelength 7BOn) is used.

Image exposure was carried out with a spot diameter of 80 mm, and the image was developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of sample Nos. 1101-1104, which were sufficient for practical use.

Example 12 A-Si was prepared under the same conditions and procedures as in Example 5, except that the CH and gas used in Example 5 were changed to NO gas.
A light-receiving member for electrophotography was produced. (Sample No. 12
01-1204).

Regarding these electrophotographic light-receiving members, an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm) is used.

Image exposure was carried out with a spot diameter of 80 mm, and the image was developed and transferred to obtain an image.

The interference fringe pattern is i! in all images of sample Nos. 120L to 1204. There were no complaints and the results were sufficient for practical use.

Example 13 A- was carried out under the same conditions and procedures as in Example 5 except that the C) I4 gas used in Example 5 was changed to NH3 gas.
A Si-based electrophotographic receiving member was produced (sample No. 13).
01-1304).

Regarding these electrophotographic light-receiving members, an image exposure device W1 (laser light wavelength: ?8Qn-) is used as shown in FIG.

One image was exposed with a spot diameter of 80 mm), and the image was developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of sample Nos. 1301 to 1304, which were sufficient for practical use.

Example 14 M support (length i, ) 357 mm, diameter (r
) 80 am) was processed with a 12-plate to obtain the surface properties shown in Table 1a (B) to (E).

Next, in the same manner as in Example 1 except that the conditions shown in Table 13 were used, an electrophotographic light-receiving member was produced according to various operating procedures using the deposition apparatus shown in FIG.
01-1404).

In addition, SiH4, GeH* *B2H6/82
f) Set the flow rate to be as shown in Fig. 52, and in the nitrogen atom-containing layer, set the flow rate of NH, as shown in Fig. 56, to 5iHa, GeH4+ B2H&/B, respectively.
2 and NH, mass flow control upper roller 2007.2
008.2010.2009 Co/Vieta (HP98
45B).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 14 were obtained.

These light-receiving members for electrophotography were subjected to image exposure using an image exposure device t shown in FIG. 28 (laser light wavelength 780 nm, spot diameter 80 scales), and then developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 15 A-5 was carried out under the same conditions and procedures as in Example 14 except that the NH3 gas used in Example 14 was changed to No gas.
An i-based electrophotographic light-receiving member was produced (sample No. 15)
01~+504).

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 2B (laser light wavelength: 7BOn layer, spot diameter: eoIm), and then developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of samples) lo, 1501 and 1504, which were sufficient for practical use.

Example 18 A- was carried out under the same conditions and procedures as in Example 14 except that the NH3 gas used in Example 14 was replaced with C) I4 gas.
A 9i-based electrophotographic light-receiving member was produced (sample No. 1).
601-1804).

These electrophotographic light-receiving members were subjected to image exposure using an image exposure device 21 (laser light wavelength: 780 is, spot diameter: 80 scales) shown in FIG. 2B, and then developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of sample Nos. 1801 to 1804, which were sufficient for practical use.

Example 17 M support (length L) 357m5. Diameter (r)
80 m5) was machined on a lathe to the surface properties shown in Tables 1a (B) to (E).

Next, in the same manner as in Example 1 except that the conditions shown in Table 15 were used, an electrophotographic light-receiving member was produced according to various operating procedures using the deposition apparatus shown in FIG.
01-1704).

In addition, 5iHa, Gl! ! (4,8286/B
2 so that the flow rate becomes as shown in Fig. 53, and the carbon atom-containing layer.

Change the flow rates of CH and S to each as shown in Fig. 57.
iHa, Gs&, 82 H&/Hz and C) 14 Nomas Flow Controller 2007.2008
．． 2010.2009 to computer (IP9845B
) was controlled and formed.

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 16 were obtained.

Regarding these light-receiving members for electrophotography, the image exposure apparatus shown in FIG. 26 (laser light wavelength 780 nm,
Perform image exposure with a spot diameter of 80 u), develop it,
No interference fringe pattern was observed in the 9 images obtained by transfer, and the images were sufficient for practical use.

Example 18 A-9 was carried out under the same conditions and procedures as in Example 17 except that the CHa gas used in Example 17 was changed to No gas.
An i-based electrophotographic light-receiving member was produced (sample No. 18
01~tao4).

The electrophotographic light-receiving member produced in this way was exposed to the image exposure apparatus shown in FIG.
Image exposure was carried out with a spot diameter of 80 scales), which was then developed and transferred to obtain an image. Sample' No. 1801
The interference fringe pattern is 1 uiut in any image of ~1804.
It was sufficient for practical use.

Example 18 A-3 was carried out under the same conditions and order as in Example 17 except that the C1 gas used in Example 17 was changed to NH gas.
An i-based electrophotographic light-receiving member was produced (sample No. 1l
O1-11104).

These electrophotographic light-receiving members were subjected to image exposure using an image exposure device 21 (laser light wavelength: 780 nm, spot diameter: 80 u) shown in FIG. 28, and then developed and transferred to obtain images.

No interference fringe pattern was observed in any of the images of sample No. 1901 N1904, and the images were sufficient for practical use.

Example 20 M support (length L) 357m5. Diameter (r)
80 mm) was machined on a lathe to give the surface properties as shown in Tables 1a (B) to (E).

Next, in the same manner as in Example 1 except that the conditions shown in Table 17 were used, electrophotographic light-receiving members were produced according to various operating procedures using the deposition apparatus shown in FIG.
001-2004).

In addition, SiH4, 0s)14, B2H6/H2f
) SiH, respectively, with the flow rate as shown in FIG. 54, and for the oxygen atom-containing layer, the flow rate of NO as shown in FIG.

GeHs, B2116/H? and N(M)?
Sufu 0:17 Trawler 2007.2008.2010
．． 20011 was generated by a computer (IP9845B).

When layer J1 of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 18 were obtained.

Regarding these light-receiving members for electrophotography, the image exposure apparatus shown in FIG. 26 (laser light wavelength 780 nm,
Perform image exposure with a spot diameter of 80 feet), develop it,
No interference fringe pattern was observed in the zero image obtained by transfer, and the image was sufficient for practical use.

Example 21 A-9 was carried out under the same conditions and procedures as in Example 20, except that the NO gas used in Example 20 was changed to NH gas.
An i-based electrophotographic light-receiving member was produced (sample No. 21
01-2104).

The electrophotographic light-receiving member produced in this way was exposed to the image exposure apparatus (laser light wavelength 78 cm) shown in FIG.
Image exposure was carried out with a spot diameter of 0 nm and a spot diameter of 80 mm, which was then developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of Test No. 4 and 2101 to 2104, which were sufficient for practical use.

Example 22 A-
A 9i-based electrophotographic light-receiving member was produced (sample No. 2).
201-2204).

These electrophotographic light-receiving members were subjected to image exposure using an image exposure device t shown in FIG. 2B (laser light wavelength: 780 ns, spot diameter: 80 scales), and then developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of sample Nos. 2201 to 2204, which were sufficient for practical use.

Example 23 M support (length L') 357 mm, diameter (r)
80+v++) was machined with a lathe to the surface properties shown in Table 1a CB) to (E).

Next, in the same manner as in Example 1 except that the conditions shown in Table 18 were used, electrophotographic light-receiving members were produced according to various operating procedures using the salt 8I apparatus shown in FIG.
301-2304).

In addition, the flow rate of SiH4, Ge)t4+ B2H6/B2 was adjusted as shown in Fig. 55, and the flow rate of NH3 in the nitrogen atom-containing layer was adjusted as shown in Fig. 58, respectively. / B2 and IIH3 mass 70 controller 2007.200
8.2010.20011 on computer (HP118
'45B).

When layer J1 of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 20 were obtained.

These light-receiving members for electrophotography were subjected to image exposure using an image exposure device "a" (laser light wavelength 780I, spot diameter 80U) shown in FIG. 2B, and then developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 24 A-S was carried out under the same conditions and procedures as in Example 23, except that the NHj gas used in Example 23 was changed to NO gas.
An i-series electrophotographic light-receiving member was produced (Trial INo. 2
40.1-2404).

Regarding these light-receiving members for photographic use, an image exposure device (laser light wavelength 7800 m,
Perform image exposure with a spot diameter of 80μ), develop it,
An image was obtained by transfer.

No interference fringe pattern was observed in any of the images of sample Nos. 2401 to 2404, which were sufficient for practical use.

Example 25 A- was carried out under the same conditions and procedures as in Example 23 except that the NH3 gas used in Example 23 was changed to CH4 gas.
5i-based main electrophotographic photoreceptive materials were produced (sample! 1a,
2501-2504).

Regarding the electrophotographic light-receiving member thus produced, an image exposure apparatus t (laser light wavelength?
Image exposure was carried out at 80 na and spot diameter of 80 u), and the image was developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of sample Nos. 2501 to 2504, which were sufficient for practical use.

Example 2B For Example 1 to Example 25, H2 is 3000
B, diluted in MalPp intestine)1. H instead of gas
Using PH3 gas diluted to 3000 mm of pp-2 with
a-2801~270G) -The other creation conditions are:
The same procedures as in Examples 1 to 25 were carried out.

These light-receiving members for electrophotography were subjected to image exposure using an image exposure device (laser light wavelength 780n+s, spot diameter 80u) shown in Fig. 26, and then developed and transferred to obtain an image. No interference fringe pattern was detected,
It was sufficient for practical use.

Example 27 M processed with a lathe to have the surface properties as shown in Table 1a (B)
Support body (length L) 357m5. Diameter (r) 80s■
), except that the flow rate ratio of SiH gas and C) L4 gas during surface layer formation was changed as shown in Table 21 to change the content ratio of silicon atoms and carbon atoms in one surface layer. A-Si electrophotographic light-receiving members were prepared according to the same conditions and procedures as in Example 1 (Samples a!2701-2
708).

Regarding these light-receiving members for electrophotography, the image exposure bag shown in FIG. 26A! ! (Wavelength of laser light? 80mm
, one spot diameter was 80-), and the steps of image formation, development, and cleaning were repeated 50,000 times, and then one image needle value was measured, and the results shown in Table 21 were obtained.

Example 28 M processed with a lathe to have the surface properties as shown in Table 1a (B)
Support body (length L) 357mm, diameter (r) 80s+
m), the raw material gas at the time of forming the surface layer was SiH4 gas,
Implementation-27 except that CI (a gas and 5IFa were used and the flow rate ratio of these gases was changed as shown in Table 22.
A-Si, VT electrophotographic light-receiving members were created according to the same conditions and procedures as (sample acids 2801 to 280B).
.

Regarding these light-receiving members for electrophotography, an image exposure apparatus 1 (with a laser beam wavelength of 780 nm) shown in FIG.

After performing image exposure with a spot diameter of 80 μ) and repeating the steps of image formation, development, and cleaning 50,000 times, one image needle value was measured, and the results shown in Table 22 were obtained.

Example 29 M lathed to give the surface properties as shown in Table 1a CB)
Support body (length L) 357mm, diameter (r) 80mm
), a-Si electrophotographic light-receiving members were prepared according to the same conditions and order as in Example 1, except that the surface layer was formed by sputtering (Samples J/12901 to
2907).

Note that the surface layer was formed as follows. That is, after forming the second layer, the support formed up to the second layer is
Take out the tank Ia from the device shown in Figure 0 and add 2()l of water from the device.
,) Replace the gas cylinder with an argon (^r) gas cylinder, clean the inside of the device, and place a sputtering target of 51 mm thick made of Si and a sputtering target of 5 mm thick made of graphite on the cathode electrode. Lay them out on one side so that the area ratios are as shown in Table 23. After that, the support on which the second layer T was formed was installed in the device, and after the pressure was reduced, argon gas was introduced and the high frequency power was set to 300 W to generate glow discharge and sputter the surface layer material on the cathode electrode. A surface layer was formed.

Regarding these light-receiving members for electrophotography, the image exposure bag m shown in FIG.

After performing image exposure with a spot diameter of 80 scales, and collapsing the image 5 times during image formation, development, and re-leaning, the image and IF values were performed, and the results shown in Table 23 were obtained.

〔Effect of the invention〕

As described above in detail, the present invention is suitable for image formation using coherent monochromatic light, easy to manage manufacturing, and eliminates interference fringe patterns that appear during image formation and spots during reversal development. can simultaneously and completely eliminate the appearance of
Furthermore, it is possible to provide a light-receiving member that is excellent in mechanical durability, particularly in abrasion resistance and light-receiving properties.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIGS. 6A, 6B, 6C, and 6N are explanatory diagrams showing that no interference fringes appear when the interfaces between the layers of the light-receiving member are non-parallel. FIGS. 7A), 7B), and 7C are explanatory diagrams comparing the intensity of reflected light when the interfaces of each layer of the light-receiving member are parallel and non-linear. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIGS. 9(A), CB), and (C) are explanatory diagrams of the surface conditions of typical supports, respectively. FIG. 10 is an explanatory diagram of layer regions of the light receiving member. FIGS. 11 to 13 are explanatory diagrams for explaining the distribution state of germanium atoms in the first layer. FIG. 20 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 21 is an explanatory diagram of the surface state of the M support used in Examples. FIG. 22 to FIG. 25, FIG. 36 to FIG. 42, and FIG. 52 to FIG. 58 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 26 is an explanatory diagram of the image exposure apparatus used in the example, and FIGS. 27 to 35 are explanatory diagrams for explaining the distribution state of the substance (C) in the single layer region (PM). It is a diagram. 43 to 51 show atoms (
0, C, N) is an explanatory diagram for explaining the distribution state. 1000・・・・・・・・・・・・・・・Photoreceptive layer 1001・・・・・・・・・・・・・・・M support 1002・・・・・・・・・・・・・・・・・・First layer 1003・・・・・・・・・・・・・・・・・・
Second layer 1004・・・・・・・・・・・・・・・
・Light receiving member 1005・・・・・・・・・・・・・・・
...Free surface 2601 of light-receiving member...
・・・・・・・・・Light receiving member for electrophotography 2B02・
・・・・・・・・・・・・・・・・・・ Semiconductor laser 2
603・・・・・・・・・・・・・・・Fθ lens 2804・・・・・・・・・・・・・・・Polygon mirror 2605・・・・・・・・・・・・・・・・・・
・・Plan view of exposure device 260B ・・・・・・・・・・・
・・・・・・・Side view of the exposure device Fig. 2 #; 3 Fig. 4 Fig. 5 Fig. 6 (A) t s＞(C) Fig. 7 Fig. 8 Figure 13 Figure 14 Figure 2515 Figure 16 Figure 17 Figure 18 Figure □C Figure 19 Figure 22 Figure 23 Figure 24 Figure 25 Figure 26 Figure 27 Figure 28 Figure 29 Figure 30 Fig. 31 Fig. 33 Fig. 34 Fig. 35 Fig. 36 Fig. 37 Fig. 38 Fig. 39 Fig. 40 Fig. 81 (intermediate) Fig. A) Fig. 34 Fig. 35 Fig. 42 □C Fig. 43 Fig. 44 Fig. A5 Fig. 46 Fig. 47 Fig. 48 Fig. 49 Fig. 50 Fig. 52 Fig. 54 Fig. 56 Gas; Amount E

Claims (19)

[Claims] (1) A first layer made of an amorphous material containing silicon atoms and germanium atoms, a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity, and a silicon atom and a surface layer made of an amorphous material containing carbon atoms are provided in order from the support side, and the distribution state of germanium atoms in the first layer is The material is non-uniform in the layer thickness direction, and at least one of the first layer and the second layer contains a substance that controls conductivity, and in a layer region containing the substance, the substance The photoreceptive layer contains at least one type selected from oxygen atoms, carbon atoms, and nitrogen atoms, and has one or more pairs of non-containing atoms within a short range. A light-receiving member characterized in that it has parallel interfaces, and a large number of non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction. (2) The photoreceptor layer according to claim 1, wherein the photoreceptive layer contains at least one type selected from oxygen atoms, carbon atoms, and nitrogen atoms in a uniform state in the layer thickness direction. Receptive member. (3) The light according to claim 1, wherein the photoreceptive layer contains at least one type selected from oxygen atoms, carbon atoms, and nitrogen atoms in a nonuniform state in the layer thickness direction. Receptive member. (4) The light receiving member according to claim 1, wherein the arrangement is regular. (5) The light receiving member according to claim 1, wherein the arrangement is periodic. (6) The light receiving member according to claim 1, wherein the short range is 0.3 to 500μ. (7) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged irregularities provided on the surface of the support. (8) The light-receiving member according to claim 1, wherein the unevenness is formed by an inverted V-shaped linear protrusion. (9) The light-receiving member according to claim 8, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially an isosceles triangle. (10) The light-receiving member according to claim 8, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a right triangle. (11) The light-receiving member according to claim 8, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a scalene triangle. (12) Claim 1, wherein the support body is cylindrical.
The light-receiving member described in 2. (13) The light-receiving member according to claim 12, wherein the inverted V-shaped linear protrusion has a spiral structure within the plane of the support. (14) The light receiving member according to claim 13, wherein the helical structure is a multiple helical structure. (15) The light-receiving member according to claim 8, wherein the inverted V-shaped linear protrusion is divided in the direction of its ridgeline. (16) The light receiving member according to claim 12, wherein the ridgeline direction of the inverted V-shaped linear protrusion is along the central axis of the cylindrical support. (17) Claim 7: The unevenness has an inclined surface.
The light-receiving member described in 2. (18) The light-receiving member according to claim 17, wherein the inclined surface is mirror-finished. (19) The light-receiving member according to claim 7, wherein the free surface of the light-receiving layer has projections and depressions arranged at the same pitch as the projections and depressions provided on the surface of the support.