JPS6197539A - Infrared linear array element - Google Patents
Infrared linear array elementInfo
- Publication number
- JPS6197539A JPS6197539A JP59219555A JP21955584A JPS6197539A JP S6197539 A JPS6197539 A JP S6197539A JP 59219555 A JP59219555 A JP 59219555A JP 21955584 A JP21955584 A JP 21955584A JP S6197539 A JPS6197539 A JP S6197539A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- electrode
- array element
- linear array
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910001120 nichrome Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 239000010408 film Substances 0.000 abstract description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 2
- 238000003776 cleavage reaction Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000007017 scission Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は赤外線撮像装置、非接触温度計などに用いるこ
とのできる赤外線検出用のりニアアレイ素子に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a linear array element for infrared detection that can be used in infrared imaging devices, non-contact thermometers, and the like.
従来例の構成とその問題点
物体は常温近傍において、１０μｍの波長付近にピーク
をもつ赤外線を輻射しており、この輻射エネルギーの波
長特性が物体の温度によって異なるので、物体から輻射
される赤外線のエネルギーを測定することによって物体
の温度を非接触で測定できる。また表示デバイスを用い
れば物体の熱像を短時間に目で見ることができる。Conventional configuration and its problems At room temperature, objects radiate infrared rays with a peak around a wavelength of 10 μm.The wavelength characteristics of this radiant energy vary depending on the temperature of the object, so the infrared rays radiated from the object By measuring energy, the temperature of an object can be measured without contact. Furthermore, if a display device is used, a thermal image of an object can be visually viewed in a short period of time.
これらに使用される赤外線検出器としては、大別して量
子形と熱形がある。量子形は応答速度が速く感度も高い
という特長をもっているが、液体窒素などによる冷却が
必要であり、感度の波長依存性が大きいという欠点を有
する。それに比べて熱形検出器は、感度は低いが、常温
で動作し、感度の波長依存性がないという長所をもって
いる。Infrared detectors used for these can be roughly divided into quantum type and thermal type. The quantum type has the advantage of fast response speed and high sensitivity, but has the disadvantage that it requires cooling with liquid nitrogen or the like, and its sensitivity is highly dependent on wavelength. In comparison, thermal detectors have lower sensitivity, but have the advantage of operating at room temperature and having no wavelength dependence of sensitivity.
熱形には、サーミスタ形と焦電形があるが、焦電形は比
較的感度もよく、バイアス電源を必要とせず、取扱いが
簡便である。このようなことから、赤外線検出器として
、特性のよい焦電形の検出器が望まれている。There are two types of thermal type: thermistor type and pyroelectric type. Pyroelectric type has relatively good sensitivity, does not require a bias power source, and is easy to handle. For this reason, a pyroelectric detector with good characteristics is desired as an infrared detector.
焦電材料としては、単結晶、磁器、薄膜が考えられる。Possible pyroelectric materials include single crystals, porcelain, and thin films.
薄膜は、高密度のアレイセンサを構成するのに有利であ
り、比検出能Ｄ＊を大きくできるという点でも有利であ
る。焦電体薄膜は通常酸化物やＳｉ等を基板に用い、高
周波スパッタリング法あるいは、蒸着法などで作成され
る。焦電形の検出素子は赤外線の吸収による温度上昇を
利用するので、赤外線を十分に吸収させること、基板へ
の熱の逃げがない様にすること″が必要である。これは
基板をとり除くことで解決できるが、十分な機械的強度
が得られない。A thin film is advantageous in configuring a high-density array sensor, and is also advantageous in that the specific detectability D* can be increased. A pyroelectric thin film is usually created using an oxide, Si, or the like as a substrate by high-frequency sputtering, vapor deposition, or the like. Pyroelectric detection elements utilize the temperature rise caused by absorption of infrared rays, so it is necessary to absorb sufficient infrared rays and to prevent heat from escaping to the substrate.This can be done by removing the substrate. However, sufficient mechanical strength cannot be obtained.
発明の目的
本発明は基板への熱の逃げをなくし、しかも機械的強度
が高く高感度の赤外線リニアアレイ素子を提供すること
を目的とする。OBJECTS OF THE INVENTION An object of the present invention is to provide an infrared linear array element that eliminates heat escape to a substrate, has high mechanical strength, and has high sensitivity.
発明の構成
本発明は、基板上に設けた焦電体薄膜を用いて赤外線を
検出するように構成された赤外線リニアアレイ素子にお
いて、受光部に対向する前記基板を一部分除去し、網目
状の支持、桟′のみを残す様に構成したことを特徴とす
る。Structure of the Invention The present invention provides an infrared linear array element configured to detect infrared rays using a pyroelectric thin film provided on a substrate, in which a portion of the substrate facing the light receiving section is removed and a mesh support is provided. , is characterized in that it is configured so that only the crosspiece ′ remains.
実施例の説明
第１図および第２図は各々本発明にょる焦電形赤外線リ
ニアアレイ素子の平面図と断面図である。DESCRIPTION OF THE EMBODIMENTS FIGS. 1 and 2 are a plan view and a sectional view, respectively, of a pyroelectric infrared linear array element according to the present invention.
（１００）でへき関し鏡面研摩を施した厚さ約４００μ
ｍのＭｑｏ基板１上に厚さ約０．２μｍの電極２を形成
した後、厚さ約４μｍの焦電体膜３をスパツタリングに
より作成した。受光電極４及びとり出し電極５を蒸着し
た後、熱源リン酸を用いＭｇＯ基板１をエツチングし開
口部６を形成した。Approximately 400μ thick with mirror polishing (100)
After forming an electrode 2 with a thickness of about 0.2 μm on an Mqo substrate 1 of 100 m in thickness, a pyroelectric film 3 with a thickness of about 4 μm was formed by sputtering. After the light receiving electrode 4 and the extraction electrode 5 were deposited, the MgO substrate 1 was etched using a heat source of phosphoric acid to form an opening 6.
この時、ＭｇＯ基板１の開口部６に対応する部分を全て
とり除くのではなく、この開口部６に臨む薄膜電極２を
支持する様に、第３図に示す様にＭｇＯ基板１の一部を
支持桟°７として網目状に残し、薄膜電極２を保持した
。この時、網目のピッチａは３００μｍ、残した基板の
巾６は７０μｍである。また厚みＣは４ｏμｍである。At this time, instead of removing the entire portion of the MgO substrate 1 corresponding to the opening 6, a part of the MgO substrate 1 is removed as shown in FIG. 3 so as to support the thin film electrode 2 facing the opening 6. The support bars 7 were left in the form of a mesh to hold the thin film electrode 2. At this time, the mesh pitch a is 300 μm, and the width 6 of the remaining substrate is 70 μm. Further, the thickness C is 4 0 μm.
また受光電極４のピッチは１００μｍ、ギャップは３０
μｍである。The pitch of the light receiving electrodes 4 is 100 μm, and the gap is 30 μm.
It is μm.
温度５ｏｏｘの黒体炉を光源に用い、上記の素子の赤外
特性を測定した。焦電体膜３としてＰｂＴｉＯ２を用い
、電極２として白金を用いた場合に、ＭｇＯ基′＆１の
影響を調べた。Ｍｈｏ基板を網目状の支持夙゛７のみ残
して除去した試料では、全面に厚さ２０μｍのＭｇＯが
残っている場合に比べ１５倍の出力が得られ、ＭｇＯ基
板１ を全て、とり除いた場合に比べ出力は２Ｏ４程度
しか減少しておらず、機械的強度も十分であった０チョ
ッピング周波数１０Ｈｚにおいて、電圧感度Ｒｖは、焦
電体膜３がＰｂＴｉＯ２の場合１３００Ｖ／Ｗ。The infrared characteristics of the above device were measured using a blackbody furnace at a temperature of 50ox as a light source. The influence of MgO groups '&1 was investigated when PbTiO2 was used as the pyroelectric film 3 and platinum was used as the electrode 2. In the sample where the Mho substrate was removed leaving only the mesh-like support layer 7, 15 times the output was obtained compared to the case where MgO with a thickness of 20 μm remained on the entire surface, and when the entire MgO substrate 1 was removed. At a zero chopping frequency of 10 Hz, where the output was reduced by only about 2O4 and the mechanical strength was sufficient, the voltage sensitivity Rv was 1300 V/W when the pyroelectric film 3 was made of PbTiO2.
Ｐｂ Ｌａ Ｔｉ
Ｏ，９５０，０５。、９８０３の場合１６００ｖ／／Ｖ
／、Ｐｂｏ、８６Ｌａｏ、１ｏＴｉＯ３の場合８００Ｖ
／ＷＰ ｂｏ 、７５ Ｌ ａ ｏ 、 １ ？ Ｔ
Ｉ Ｏｓは８０ｏｖ／ｗ、Ｐｂｏ、７゜Ｌ ａｏ 、
２０ Ｔ １０３０：）場合６８０Ｖ／Ｗが得られた。PbLaTiO,950,05. , 1600v//V for 9803
/, Pbo, 86Lao, 800V for 1oTiO3
/WP bo, 75 L a o, 1? T
IOs is 80ov/w, Pbo, 7°Lao,
20 T 1030:) 680 V/W was obtained.
電極３がｐｔの場合とＡｕ の場合で差は認められな
かった。又、赤外光をＧｅレンズでアレイ素子の１つに
集光し、この素子の出力■。と隣の素子の出力ＶＮを同
時に測定し、これらの割合からクロストークを算出した
ところ、いずれの薄膜においてもｖＮ／ｖ０＝０．１
であった。これより本発明によるアレイ素子が高感で解
像度も良いことがわかる。No difference was observed between when electrode 3 was made of PT and when it was made of Au. In addition, the infrared light is focused on one of the array elements using a Ge lens, and the output of this element is ■. and the output VN of the adjacent element were measured at the same time, and the crosstalk was calculated from these ratios, and it was found that vN/v0 = 0.1 for both thin films.
Met. This shows that the array element according to the present invention has high sensitivity and good resolution.
発明の効果
本発明による赤外線ＩＪ ニアアレイ素子は、基板を全
て除去することなく網目状に残すことで十分な機械的強
度を持たせることができ、また基板への熱の逃げが少な
いので十分な赤外線感度が得られる。Effects of the Invention The infrared IJ near array element according to the present invention can have sufficient mechanical strength by leaving the substrate in the form of a mesh without removing it completely, and also has sufficient infrared rays because less heat escapes to the substrate. Sensitivity can be obtained.
第１図及び第２図は各々本発明の実施例における焦電形
赤外線ＩＪ ニアアレイ素子の平面図及び断面図、第３
図は同実施例の要部である網目状の支持＃℃部分の拡大
斜視図である。
１・・・・・・ＭｇＯ基板、２・・・・・・薄膜電極、
３・・・・・・焦電体膜、４・・・・・・受光電極、５
・・山・とり出し電極、６・・・・・・開口部、７・・
・・・・支持片っ代理人の氏名 弁理士 中 尾 敏
男 ほか１名第１図FIGS. 1 and 2 are a plan view and a sectional view of a pyroelectric infrared IJ near array element in an embodiment of the present invention, respectively, and FIG.
The figure is an enlarged perspective view of the mesh-like support #°C part, which is the main part of the same embodiment. 1...MgO substrate, 2...Thin film electrode,
3... Pyroelectric film, 4... Light receiving electrode, 5
...Mountain/takeout electrode, 6...Opening, 7...
...Name of supporting agent Satoshi Nakao, patent attorney
Figure 1: Male and 1 other person
Claims (5)
の薄膜電極上に作られた焦電体薄膜と、前記焦電体薄膜
上に形成された受光電極とを有し、前記薄膜電極又は前
記受光電極が２個以上に互いに分離独立して形成されて
いるとともに、前記受光電極の反対側の前記基板の一部
を前記薄膜電極及び焦電体薄膜を支持する様に網目状構
造の支持桟として残して除去したことを特徴とする赤外
線リニアアレイ素子。(1) A substrate, a thin film electrode formed on the substrate, a pyroelectric thin film formed on the thin film electrode, and a light receiving electrode formed on the pyroelectric thin film, and the thin film Two or more electrodes or the light-receiving electrode are formed separately and independently from each other, and a part of the substrate on the opposite side of the light-receiving electrode has a mesh structure so as to support the thin film electrode and the pyroelectric thin film. An infrared linear array element characterized in that the infrared linear array element is removed while remaining as a supporting crosspiece.
＿３で表わされ、０．７０≦ｘ≦１、０．９０≦ｘ＋ｙ
≦１、０．９５≦ｚ≦１の組成範囲の薄膜であることを
特徴とする特許請求の範囲第１項記載の赤外線リニアア
レイ素子。(2) The pyroelectric thin film has the chemical formula Pb_xLa_yTi_zO
Represented by _3, 0.70≦x≦1, 0.90≦x+y
The infrared linear array element according to claim 1, wherein the infrared linear array element is a thin film having a composition in the range of ≦1 and 0.95≦z≦1.
であることを特徴とする特許請求の範囲第１項記載の赤
外線リニアアレイ素子。(3) The infrared linear array element according to claim 1, wherein the electrode formed on the substrate is made of either Pt or Au.
特徴とする特許請求の範囲第１項記載の赤外線リニアア
レイ素子。(4) The infrared linear array element according to claim 1, characterized in that a NiCr alloy thin film is used as the light-receiving electrode.
請求の範囲第１項記載の赤外線リニアアレイ素子。(5) The infrared linear array element according to claim 1, characterized in that MgO is used as the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59219555A JPS6197539A (en) | 1984-10-19 | 1984-10-19 | Infrared linear array element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59219555A JPS6197539A (en) | 1984-10-19 | 1984-10-19 | Infrared linear array element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6197539A true JPS6197539A (en) | 1986-05-16 |
Family
ID=16737337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59219555A Pending JPS6197539A (en) | 1984-10-19 | 1984-10-19 | Infrared linear array element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6197539A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000062028A3 (en) * | 1999-04-09 | 2002-05-10 | Spectraprobe Ltd | Improvements in, or relating to, infra-red detection |
| US6579740B2 (en) | 2000-10-13 | 2003-06-17 | Denso Corporation | Method of making a thin film sensor |
-
1984
- 1984-10-19 JP JP59219555A patent/JPS6197539A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000062028A3 (en) * | 1999-04-09 | 2002-05-10 | Spectraprobe Ltd | Improvements in, or relating to, infra-red detection |
| US6818892B1 (en) | 1999-04-09 | 2004-11-16 | Spectraprobe Limited | System and method for infra-red detection |
| US6579740B2 (en) | 2000-10-13 | 2003-06-17 | Denso Corporation | Method of making a thin film sensor |
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