JPS6196644A - Appearance examination device - Google Patents
Appearance examination deviceInfo
- Publication number
- JPS6196644A JPS6196644A JP21616384A JP21616384A JPS6196644A JP S6196644 A JPS6196644 A JP S6196644A JP 21616384 A JP21616384 A JP 21616384A JP 21616384 A JP21616384 A JP 21616384A JP S6196644 A JPS6196644 A JP S6196644A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- electron microscope
- microscope
- optical
- inspected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野゛〕
本発明は半導体装置の素子パターン等の検査に好適な外
観検査装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an appearance inspection apparatus suitable for inspecting element patterns, etc. of semiconductor devices.
IC,LSI等の半導体装置では、所定の工程を経て完
成された半導体装置の素子パターンを検査する必要があ
り、外観検査装置が利用される。2. Description of the Related Art In semiconductor devices such as ICs and LSIs, it is necessary to inspect the element patterns of the semiconductor devices completed through predetermined steps, and visual inspection equipment is used.
近年、素子パターンの微細化に伴なって、この釉の外観
検査装置に走査型電子顕微鏡が使用されておシ、加速さ
れた電子をウェーハ表面に照射しかつこれを走査し、ウ
ェーハ表面からの反射電子や二次電子を検出してこれか
らパターン像を認識し、パターンの欠陥検査や寸法測定
を行なっている。In recent years, with the miniaturization of device patterns, scanning electron microscopes have been used as visual inspection equipment for glazes. Pattern images are recognized by detecting reflected electrons and secondary electrons, and pattern defects and dimension measurements are performed.
ところで、この走査型電子顕微鏡は高倍率であるために
微細素子パターンの検査には有効であるが、逆にその分
だけ観察視野が狭くなり、したがって検査にウェーハ上
の所定のパターンを視野内に設定するのが容易でなく、
比較的に時間がかかる。このため、この間中ウェーハ上
に電子が照射されることになって総量としての電子量が
多くなシ、MOS)ランジスタに照射されてMO3特性
へのダメージを生じたシ、異物が付着して汚染される等
のコンタミネーションが生じ、更に電子のチャージアッ
プによシバターン像のコントラスト低下や像変形が生じ
て正確な検査ができなくなる等の種々の問題の原因とな
っている。なお、検査装置技術を詳しく述べである例と
しては、工業調査会発行電子材料1981年11月号別
冊、昭和56年11月15日発行、P、243〜P、2
47がある。By the way, this scanning electron microscope has a high magnification, so it is effective for inspecting minute device patterns, but on the other hand, the observation field of view is narrower, so it is difficult to inspect a predetermined pattern on a wafer within the field of view. Not easy to configure;
It is relatively time consuming. For this reason, electrons are irradiated onto the wafer during this time, resulting in a large total amount of electrons, irradiation to the MOS transistors, which causes damage to the MO3 characteristics, and foreign matter adhering to the wafer, resulting in contamination. In addition, charge-up of electrons causes various problems such as a decrease in the contrast of the shiba-turn image and deformation of the image, making accurate inspection impossible. An example of a detailed description of inspection equipment technology is the electronic material November 1981 special edition published by Kogyo Kenkyukai, published November 15, 1981, P. 243-P. 2.
There are 47.
本発明の目的は走査型電子顕微鏡による観察に際し、所
要の検査位置を短時間でその視野内に設定することがで
き、これKより電子線照射の総量を低減して素子ダメー
ジの防止、コンタミネーション防止、パターン像の向上
を図シ、高精度の検査を行なうことのできる外観検査装
置を提供することにある。The purpose of the present invention is to enable the required inspection position to be set within the field of view in a short time during observation using a scanning electron microscope, thereby reducing the total amount of electron beam irradiation and preventing element damage and contamination. It is an object of the present invention to provide an appearance inspection device that can prevent the above problems, improve pattern images, and perform highly accurate inspection.
本発明の前記ならびKその#1かの目的と新規な特徴は
、本明細書の記述および添付図面からあきらかになるで
あろう。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、検査用の電子顕微鏡と、これよりも低倍率の
光学顕彼鏡とを並設し、かつこれらの両顕微鋭で被検査
物の同一箇所を同時に又は【時に切換えて観察できるよ
うに構成することにより、被検査物に対する視野の設定
を光学顕微鏡で行ない、これによシミ子顕微鏡による視
野設定時間を短縮でき、電子線照射の総量の低減を図っ
て素子ダメージの防止、コンタミネーション防止および
高精度の検査を達成するものである。In other words, an electron microscope for inspection and an optical microscope with a lower magnification are installed side by side, and the configuration is such that the same part of the object to be inspected can be observed with both of these microscopes at the same time or by switching at times. By doing so, the field of view for the object to be inspected can be set using an optical microscope, which can shorten the time required to set the field of view using a simulator microscope, reduce the total amount of electron beam irradiation, and prevent element damage, contamination, and This achieves highly accurate inspection.
〔実施例1〕
第1図は本発明の外観検査装置の一実施例を示し、特に
表面に素子パターンを形成した半導体ウェーハを被検査
物とした例である。すなわち、ウェーハlはXYテーブ
ル2上に載置し、その上方には走査型電子顕微鏡3と光
学顕微鏡4を並設している。電子顕微鏡3は、電子線を
射出する電子銃5やコンデンサレンズ6、対物レンズ7
を備え、電子線をウェーハ1表面に照射する。また、そ
の−側にはウェーハ1表面から放出される二次電子や反
射電子を検出するシンチレータ8を備え、信号変換器9
、CRT(表示器)10を接続している。なお、電子顕
微鏡3の光軸はウェーハ1表面に対してθ〜90 の角
度に設定している。[Embodiment 1] FIG. 1 shows an embodiment of the appearance inspection apparatus of the present invention, in particular an example in which the object to be inspected is a semiconductor wafer with an element pattern formed on its surface. That is, the wafer 1 is placed on an XY table 2, and above it a scanning electron microscope 3 and an optical microscope 4 are arranged side by side. The electron microscope 3 includes an electron gun 5 that emits an electron beam, a condenser lens 6, and an objective lens 7.
, and irradiates the surface of the wafer 1 with an electron beam. Further, on the negative side thereof, a scintillator 8 for detecting secondary electrons and reflected electrons emitted from the surface of the wafer 1 is provided, and a signal converter 9 is provided.
, CRT (display device) 10 is connected. Note that the optical axis of the electron microscope 3 is set at an angle of .theta..about.90 with respect to the surface of the wafer 1.
一方、前記光学顕微鏡4は、光源11、ハーフミラ−1
2、レンズ13を備えてウェーハ1表面を照明し、その
反射光を撮像管14にて撮像できる。撮像管14には信
号変換器15とCRT16を接続している。この光学顕
微鏡4は光軸をウェーハ1表面に対して垂直とし、かつ
光軸はウェーハ1表面において前記電子顕微鏡3の光軸
と交差、つまり一致している。なお、光学顕微鏡4の倍
率は電子顕微鏡3に対して極めて小さくしており、換言
すれば広い視野を有するように設定している。On the other hand, the optical microscope 4 includes a light source 11, a half mirror 1
2. A lens 13 is provided to illuminate the surface of the wafer 1, and the reflected light can be imaged by the imaging tube 14. A signal converter 15 and a CRT 16 are connected to the image pickup tube 14. The optical microscope 4 has an optical axis perpendicular to the surface of the wafer 1, and the optical axis intersects with, that is, coincides with, the optical axis of the electron microscope 3 on the surface of the wafer 1. Note that the magnification of the optical microscope 4 is extremely small compared to that of the electron microscope 3, in other words, it is set to have a wide field of view.
また、前記各信号変換器9.15は制御回路17に接続
し、この制御回路17を通して前記XYテーブル2の駆
動部18を制御している。Further, each of the signal converters 9.15 is connected to a control circuit 17, and the driving section 18 of the XY table 2 is controlled through this control circuit 17.
以上の構成によれば、ウェーハ1の検査に際しては先ず
光学顕微鏡4を動作させる。つまり、光源11の光をハ
ーフミラ−12、レンズ13を通してウェーハ1に照射
し、その反射光をレンズ13で結像して撮像管14で撮
像する。そして、この撮像したウェーハlのパターンを
信号変換器15全通してCRT16上に表示する。表示
されたパターンは、低倍率であることから広い視野を有
しており、したがりてウェーハ上における検査すべきパ
ターン1aを容易にかつ短時間で見出すことができる。According to the above configuration, when inspecting the wafer 1, first the optical microscope 4 is operated. That is, the light from the light source 11 is irradiated onto the wafer 1 through the half mirror 12 and the lens 13, and the reflected light is imaged by the lens 13 and captured by the imaging tube 14. Then, this imaged pattern of the wafer l is passed through the signal converter 15 and displayed on the CRT 16. Since the displayed pattern has a low magnification, it has a wide field of view, and therefore the pattern 1a to be inspected on the wafer can be found easily and in a short time.
これから、制御回路17が駆動部18によってXYテー
ブル2を移動させ、このパターン1aを視野の中心、つ
まシ光軸位置に設定する。From this point on, the control circuit 17 moves the XY table 2 using the drive unit 18, and sets this pattern 1a at the center of the field of view, at the position of the optical axis.
次いで、電子顕微鏡3を動作させ、電子銃5から射出さ
れる電子線をレンズ6.7の作用によってウェーハ1上
で微小範囲で走査しかつその反射電子や二次電子をシン
チレータ8で検出し、信号変換器9を介してCRTIO
にパターン表示する。Next, the electron microscope 3 is operated, the electron beam emitted from the electron gun 5 is scanned over a minute range on the wafer 1 by the action of the lens 6.7, and the reflected electrons and secondary electrons are detected by the scintillator 8. CRTIO via signal converter 9
Display the pattern.
このとき、光学顕微鏡4によシ対象パターン1aは光軸
位置、換言すれば電子顕微鏡3の光軸位置上に設定され
ているため、電子顕微鏡3は直ちに対象パターン1aを
見出すことができ、極く短時間で対象パターン1aの検
査を完了することができる。At this time, since the target pattern 1a of the optical microscope 4 is set on the optical axis position, in other words, on the optical axis position of the electron microscope 3, the electron microscope 3 can immediately find the target pattern 1a, and The inspection of the target pattern 1a can be completed in a short time.
したがって、ウェーハ1に対する電子線の照射時間を短
編してその総量の低減を図り、これによ5M0Sトラン
ジスタ等の素子特性へのダメージを防止し、かつコンタ
ミネーションを防止し、更にチャージアップによるコン
トラストの低減や像の歪を防止して正確かつ高精度の検
査を実現できるO
ここで、電子顕微鏡3の電子照射をウェー711表面に
対して垂直に照射することが要求される場合には、第2
図のようにXYテーブル2Atチルト機構付のものにす
ればよい。つまシ、光学顕微鏡4で位置を設定した後に
、チルト機構でウェーハ1全傾動させ、電子顕微鏡3の
光軸と垂直にウェーハ1を設定すればよい。Therefore, the irradiation time of the electron beam on the wafer 1 is shortened to reduce the total amount of electron beam, thereby preventing damage to the characteristics of elements such as 5M0S transistors, preventing contamination, and further reducing contrast due to charge-up. It is possible to realize accurate and high-precision inspection by preventing reduction and image distortion.
As shown in the figure, an XY table 2At with a tilt mechanism may be used. After setting the position using the pick and optical microscope 4, the wafer 1 may be completely tilted using the tilt mechanism to set the wafer 1 perpendicular to the optical axis of the electron microscope 3.
々 〔実施例2〕
第3図は本発明の他の実施例を示しており、図中第1図
と同一部分には同一符号を付して詳細な説明は省略する
。[Embodiment 2] FIG. 3 shows another embodiment of the present invention, in which the same parts as those in FIG.
本例では電子顕微鏡3と光学顕微鏡4の各光軸がウェー
ハ1に対して垂直でかつ互に所定距離りだけ離して設置
している。そして、この所定距離りの情報は制御回路1
7内に予め記憶させである。In this example, the optical axes of the electron microscope 3 and the optical microscope 4 are perpendicular to the wafer 1 and are placed a predetermined distance apart from each other. This predetermined distance information is then transmitted to the control circuit 1.
7 in advance.
したがって、この構成によれば、先に光学顕微鏡4を用
いて対象パターン1aを光学顕微鏡4の光軸位置に設定
した上で、直ちに制御回路17および駆動部18を動作
してXYテーブル2を前記所定距離り移動させることに
よシ、対象パターン1aは瞬時に電子顕微鏡3の光軸位
置に設定される。これにより、電子顕微鏡3によるパタ
ーン設定および検査時間の短縮化を図り、電子線の照射
量を低減して素子特性へのダメージ防止、コンタミネー
ションの防止および検査精度の向上を達成できる。Therefore, according to this configuration, the target pattern 1a is first set at the optical axis position of the optical microscope 4 using the optical microscope 4, and then the control circuit 17 and the drive unit 18 are immediately operated to move the XY table 2 to the By moving it a predetermined distance, the target pattern 1a is instantly set at the optical axis position of the electron microscope 3. Thereby, pattern setting and inspection time using the electron microscope 3 can be shortened, and the amount of electron beam irradiation can be reduced, thereby achieving prevention of damage to element characteristics, prevention of contamination, and improvement of inspection accuracy.
本例では両顕微鏡3,4の各光軸がウェーノ・1に対し
て垂直であり、前例のようなチルト機構およびこれに伴
なう動作は不要となる。In this example, the optical axes of both microscopes 3 and 4 are perpendicular to Waeno 1, and the tilting mechanism and accompanying operation as in the previous example are not required.
(1) 電子顕微鏡と光学顕微鏡を並設し、被検査物
の同一箇所をこれら両顕微鏡で同時又は瞬時に切換えて
検査できるようにしているので、光学顕微鏡で被検査物
の対象パターンの位置決めを行なえば直ちに電子顕微鏡
の位置決めを行なうことができ、これによ、!lll電
子顕微鏡による検査時間の短縮化を図シ、被検査物に対
する電子線の照射総量を低減できる。(1) An electron microscope and an optical microscope are installed side by side, and the same part of the object to be inspected can be inspected by both microscopes simultaneously or by switching instantly, so it is possible to position the target pattern of the object to be inspected using the optical microscope. If you do this, you can immediately position the electron microscope. By shortening the inspection time using an electron microscope, it is possible to reduce the total amount of electron beam irradiation on the object to be inspected.
(2) 前記(1>により、被検査物に半導体ウェー
ノ・を適用したときには、MOSトランジスタ等の素子
特性へのダメージ防止を図ると共に、コンタミネ−7−
17を防止し、かつチャージアップを防止してコントラ
スト低下や像企ヲ解消し、検査の高精度化を達成できる
。(2) According to (1) above, when semiconductor wafer is applied to the object to be inspected, it is possible to prevent damage to the characteristics of elements such as MOS transistors, and to prevent contamination.
17 and charge-up can be prevented, contrast reduction and image distortion can be eliminated, and high accuracy of inspection can be achieved.
(3)電子顕微鏡と光学顕微鏡の光軸を被検査物上で交
差(一致)させているので、対象箇所を電子顕微鏡で検
査するのと同時に光学顕微鏡で広い範囲を観察すること
ができる。(3) Since the optical axes of the electron microscope and the optical microscope are made to intersect (coincide) on the object to be inspected, it is possible to inspect a target area with the electron microscope and simultaneously observe a wide range with the optical microscope.
(4) 電子顕微鏡と光学顕微鏡を所定距離だけ離し
て設置しかつ両光軸を被検査物に対して垂直とし、更に
被検査物を前記所定距離移動できるように構成している
ので、両顕微鏡の配置の自由度が大きく、特に被検査物
が小さい場合に有利でbる。(4) The electron microscope and the optical microscope are installed a predetermined distance apart, both optical axes are perpendicular to the object to be inspected, and the object to be inspected is configured to be movable by the predetermined distance. The degree of freedom in arrangement is large, which is particularly advantageous when the object to be inspected is small.
以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明を工上記実施例に限定され
るものではなく、その要旨を逸脱しない範囲で種々変更
可能であることはいう1でもない。たとえば、電子顕微
鏡や光学顕微鏡の具体的な構成は種々に変形できる。Although the invention made by the present inventor has been specifically explained above based on Examples, it is to be understood that the present invention is not limited to the Examples described above, and that various changes can be made without departing from the gist of the invention. Not even 1. For example, the specific configuration of an electron microscope or an optical microscope can be modified in various ways.
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である半導体ウェーハの素
子パターンの検査装置に適用した場合について説明した
が、それに限定されるものではなく、電子線の照射をな
るべく低減したい半導体装置或いはそれ以外の物の検査
用装置に適用できる。In the above explanation, the invention made by the present inventor has been mainly applied to the field of application which is the background of the invention, which is an inspection device for device patterns on semiconductor wafers. However, the present invention is not limited to this. It can be applied to equipment for inspecting semiconductor devices or other items where it is desired to reduce irradiation as much as possible.
第1図は本発明の第1実施例の全体構成図、第2図れ変
形例の構成図、
第3図は第2実施例の全体構成図である。
1・・・ウェーハ(被検査物)、2・・・XYテーブル
、3・・・電子P:A微鏡、4・・・光学顕微鈍、8・
・・シンチレータ、9・・・信号変換器、10・・・C
RT、14・・・撮像管、15・・・信号変換器、16
・・・CRT、17・・・制御m路、18・・・駆動部
、D・・・光軸間距離。FIG. 1 is an overall configuration diagram of a first embodiment of the present invention, the second diagram is a configuration diagram of a modified example, and FIG. 3 is an overall configuration diagram of a second embodiment. DESCRIPTION OF SYMBOLS 1... Wafer (inspection object), 2... XY table, 3... Electronic P:A microscope, 4... Optical microscope blunt, 8...
...Scintillator, 9...Signal converter, 10...C
RT, 14... Image pickup tube, 15... Signal converter, 16
... CRT, 17... Control m path, 18... Drive section, D... Distance between optical axes.
Claims (1)
れよりも低倍率の光学顕微鏡とを並設し、かつ前記被検
査物の同一箇所をこれら両顕微鏡で同時又は瞬時に切換
えて観察できるように構成したことを特徴とする外観検
査装置。 2、電子顕微鏡と光学顕微鏡の光軸を被検査物の表面同
一箇所で交差させてなる特許請求の範囲第1項記載の外
観検査装置。 3、電子顕微鏡と光学顕微鏡の各光軸を所定寸法離して
設置し、かつ被検査物をこれら両光軸間で移動できるよ
うに構成してなる特許請求の範囲第1項記載の外観検査
装置。[Scope of Claims] 1. An electron microscope that directly inspects the pattern of the object to be inspected and an optical microscope with a lower magnification are installed side by side, and the same part of the object to be inspected is inspected by both microscopes simultaneously or instantaneously. 1. A visual inspection device characterized by being configured so that observation can be performed by switching to . 2. The appearance inspection apparatus according to claim 1, wherein the optical axes of the electron microscope and the optical microscope intersect at the same location on the surface of the object to be inspected. 3. An appearance inspection apparatus according to claim 1, wherein the optical axes of an electron microscope and an optical microscope are set apart by a predetermined distance, and the object to be inspected can be moved between these two optical axes. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21616384A JPS6196644A (en) | 1984-10-17 | 1984-10-17 | Appearance examination device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21616384A JPS6196644A (en) | 1984-10-17 | 1984-10-17 | Appearance examination device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6196644A true JPS6196644A (en) | 1986-05-15 |
Family
ID=16684277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21616384A Pending JPS6196644A (en) | 1984-10-17 | 1984-10-17 | Appearance examination device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6196644A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04141937A (en) * | 1990-10-01 | 1992-05-15 | Sharp Corp | Semiconductor device analysis device |
WO1997028422A1 (en) * | 1996-01-31 | 1997-08-07 | Advantest Corporation | Foreign matter detector/analyzer and method thereof |
EP0849765A2 (en) * | 1996-12-19 | 1998-06-24 | Schlumberger Technologies, Inc. | Charged particle beam system with optical microscope |
JP2000040485A (en) * | 1991-05-30 | 2000-02-08 | Kla Instr Corp | Electron beam inspection method |
JP2001241940A (en) * | 2000-01-14 | 2001-09-07 | Leica Microsystems Wetzlar Gmbh | Apparatus and method of measuring features on board |
JP2010097768A (en) * | 2008-10-15 | 2010-04-30 | Topcon Corp | Complex type observation device |
KR101012177B1 (en) | 2003-12-30 | 2011-02-08 | 동부일렉트로닉스 주식회사 | Scanning electron micorscope having an optical micorscope |
JP2012015010A (en) * | 2010-07-02 | 2012-01-19 | Topcon Corp | Electron beam device and observation method therefor |
WO2018146804A1 (en) * | 2017-02-13 | 2018-08-16 | 株式会社 日立ハイテクノロジーズ | Charged particle beam device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55117388A (en) * | 1979-03-05 | 1980-09-09 | Hitachi Ltd | Scanning electronic microscope or its similar device |
JPS5795056A (en) * | 1980-12-05 | 1982-06-12 | Hitachi Ltd | Appearance inspecting process |
-
1984
- 1984-10-17 JP JP21616384A patent/JPS6196644A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55117388A (en) * | 1979-03-05 | 1980-09-09 | Hitachi Ltd | Scanning electronic microscope or its similar device |
JPS5795056A (en) * | 1980-12-05 | 1982-06-12 | Hitachi Ltd | Appearance inspecting process |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04141937A (en) * | 1990-10-01 | 1992-05-15 | Sharp Corp | Semiconductor device analysis device |
JP2000040485A (en) * | 1991-05-30 | 2000-02-08 | Kla Instr Corp | Electron beam inspection method |
WO1997028422A1 (en) * | 1996-01-31 | 1997-08-07 | Advantest Corporation | Foreign matter detector/analyzer and method thereof |
EP0849765A2 (en) * | 1996-12-19 | 1998-06-24 | Schlumberger Technologies, Inc. | Charged particle beam system with optical microscope |
EP0849765A3 (en) * | 1996-12-19 | 2001-10-04 | Schlumberger Technologies, Inc. | Charged particle beam system with optical microscope |
JP2001241940A (en) * | 2000-01-14 | 2001-09-07 | Leica Microsystems Wetzlar Gmbh | Apparatus and method of measuring features on board |
KR101012177B1 (en) | 2003-12-30 | 2011-02-08 | 동부일렉트로닉스 주식회사 | Scanning electron micorscope having an optical micorscope |
JP2010097768A (en) * | 2008-10-15 | 2010-04-30 | Topcon Corp | Complex type observation device |
JP2012015010A (en) * | 2010-07-02 | 2012-01-19 | Topcon Corp | Electron beam device and observation method therefor |
WO2018146804A1 (en) * | 2017-02-13 | 2018-08-16 | 株式会社 日立ハイテクノロジーズ | Charged particle beam device |
CN110337707A (en) * | 2017-02-13 | 2019-10-15 | 株式会社日立高新技术 | Charged particle line apparatus |
JPWO2018146804A1 (en) * | 2017-02-13 | 2019-11-21 | 株式会社日立ハイテクノロジーズ | Charged particle beam equipment |
US11239051B2 (en) | 2017-02-13 | 2022-02-01 | Hitachi High-Tech Corporation | Charged particle beam device |
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