JPS6194346A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6194346A
JPS6194346A JP21591484A JP21591484A JPS6194346A JP S6194346 A JPS6194346 A JP S6194346A JP 21591484 A JP21591484 A JP 21591484A JP 21591484 A JP21591484 A JP 21591484A JP S6194346 A JPS6194346 A JP S6194346A
Authority
JP
Japan
Prior art keywords
film
stepped sections
etched
substrate
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21591484A
Inventor
Mamoru Ando
Original Assignee
Sanyo Electric Co Ltd
Tokyo Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Tokyo Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP21591484A priority Critical patent/JPS6194346A/en
Publication of JPS6194346A publication Critical patent/JPS6194346A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE:To prevent disconnections at stepped sections on processing and the generation of voids, and to improve the degree of integration by etching a first film shaped onto a substrate twice or more, forming two steps of more of stepped sections and shaping second and third films. CONSTITUTION:An impurity, etc. are diffused selectively to the surface of an Si substrate 1 to form a predetermined semiconductor region. An SiO2 film 6 is shaped. A photo-resist 7 is applied, the photo-resist 7 at a position to be etched is removed, and the film 6 is etched only by approximately half thickness of the thickness of the film 6. The film 6 is etched again until the substrate 1 is exposed to shape two stepped sections. A passivation film 2 is formed onto the whole surface, and a film 5 electrically connected to the semiconductor region is shaped onto the film 2. Accordingly, disconnections at stepped sections on processing and the generation of voids are prevented, and the degree of integration can be improved.
JP21591484A 1984-10-15 1984-10-15 Manufacture of semiconductor device Pending JPS6194346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21591484A JPS6194346A (en) 1984-10-15 1984-10-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21591484A JPS6194346A (en) 1984-10-15 1984-10-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6194346A true JPS6194346A (en) 1986-05-13

Family

ID=16680340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21591484A Pending JPS6194346A (en) 1984-10-15 1984-10-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6194346A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8097329B2 (en) 2006-06-30 2012-01-17 Casio Computer Co., Ltd. Thin film device having thin film elements and thin film pattern on thin film elements, and method of fabricating the same
WO2016021320A1 (en) * 2014-08-07 2016-02-11 シャープ株式会社 Active matrix substrate and method for producing same
WO2016021318A1 (en) * 2014-08-07 2016-02-11 シャープ株式会社 Active matrix substrate, liquid crystal panel and method for producing active matrix substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8097329B2 (en) 2006-06-30 2012-01-17 Casio Computer Co., Ltd. Thin film device having thin film elements and thin film pattern on thin film elements, and method of fabricating the same
WO2016021320A1 (en) * 2014-08-07 2016-02-11 シャープ株式会社 Active matrix substrate and method for producing same
WO2016021318A1 (en) * 2014-08-07 2016-02-11 シャープ株式会社 Active matrix substrate, liquid crystal panel and method for producing active matrix substrate
JPWO2016021318A1 (en) * 2014-08-07 2017-04-27 シャープ株式会社 Active matrix substrate and liquid crystal panel
JPWO2016021320A1 (en) * 2014-08-07 2017-04-27 シャープ株式会社 Active matrix substrate

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