JPS6193899U - - Google Patents

Info

Publication number
JPS6193899U
JPS6193899U JP17680784U JP17680784U JPS6193899U JP S6193899 U JPS6193899 U JP S6193899U JP 17680784 U JP17680784 U JP 17680784U JP 17680784 U JP17680784 U JP 17680784U JP S6193899 U JPS6193899 U JP S6193899U
Authority
JP
Japan
Prior art keywords
logic gate
input terminal
biasing
logic
biasing means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17680784U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP17680784U priority Critical patent/JPS6193899U/ja
Publication of JPS6193899U publication Critical patent/JPS6193899U/ja
Pending legal-status Critical Current

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  • Semiconductor Memories (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図はそれぞれ本考案の第1及び
第2の実施例の入力回路を示す回路図、第3図は
本考案の第1、第2の実施例の構成を示すブロツ
ク図である。 1……LSI、2……ROM、3……入力回路
、4……制御回路、5……出力回路、6……正電
源、7……負電源、8,9……抵抗、10,11
……接続端、12,13……入力端、14……入
力端子、15……論理ゲート、16……Pチヤン
ネルMOSトランジスタ、17……Nチヤンネル
MOSトランジスタ。
1 and 2 are circuit diagrams showing the input circuits of the first and second embodiments of the present invention, respectively, and FIG. 3 is a block diagram showing the configuration of the first and second embodiments of the present invention. be. 1...LSI, 2...ROM, 3...Input circuit, 4...Control circuit, 5...Output circuit, 6...Positive power supply, 7...Negative power supply, 8, 9...Resistance, 10, 11
... Connection end, 12, 13 ... Input end, 14 ... Input terminal, 15 ... Logic gate, 16 ... P channel MOS transistor, 17 ... N channel MOS transistor.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 同一半導体基板上に少くとも読み出し専用メモ
リと入力回路を含む半導体集積回路において、前
記入力回路が、論理ゲートと、該論理ゲートの入
力端子を所定のインピーダンスで第1の論理レベ
ルにバイアスする第1のバイアス手段及び所定の
インピーダンスで第2の論理レベルにバイアスす
る第2のバイアス手段と、前記論理ゲートの入力
端に対し前記第1のバイアス手段のみを接続する
かあるいに前記第2のバイアス手段のみを接続す
るかあるいは前記第1及び第2のバイアス手段の
いずれも接続しないかの接続選択手段とを含むこ
とを特徴とする半導体集積回路。
In a semiconductor integrated circuit including at least a read-only memory and an input circuit on the same semiconductor substrate, the input circuit includes a logic gate and a first logic gate that biases an input terminal of the logic gate to a first logic level with a predetermined impedance. and a second biasing means for biasing to a second logic level with a predetermined impedance, and only the first biasing means is connected to the input terminal of the logic gate, or the second biasing means is connected to the input terminal of the logic gate. and connection selection means for connecting only the bias means or neither of the first and second bias means.
JP17680784U 1984-11-21 1984-11-21 Pending JPS6193899U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17680784U JPS6193899U (en) 1984-11-21 1984-11-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17680784U JPS6193899U (en) 1984-11-21 1984-11-21

Publications (1)

Publication Number Publication Date
JPS6193899U true JPS6193899U (en) 1986-06-17

Family

ID=30734391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17680784U Pending JPS6193899U (en) 1984-11-21 1984-11-21

Country Status (1)

Country Link
JP (1) JPS6193899U (en)

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