JPS6186499A - Gas phase growth apparatus - Google Patents

Gas phase growth apparatus

Info

Publication number
JPS6186499A
JPS6186499A JP20947884A JP20947884A JPS6186499A JP S6186499 A JPS6186499 A JP S6186499A JP 20947884 A JP20947884 A JP 20947884A JP 20947884 A JP20947884 A JP 20947884A JP S6186499 A JPS6186499 A JP S6186499A
Authority
JP
Japan
Prior art keywords
susceptor assembly
bell jar
base plate
gas
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20947884A
Other languages
Japanese (ja)
Other versions
JPH0310597B2 (en
Inventor
Masayuki Nozawa
野沢 昌幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP20947884A priority Critical patent/JPS6186499A/en
Publication of JPS6186499A publication Critical patent/JPS6186499A/en
Publication of JPH0310597B2 publication Critical patent/JPH0310597B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the generation of wall deposition and to perform excellently the gas phase growth by interposing a cylindrical body made of quartz between the lower end of a susceptor assembly body and the upper surface of a base plate in leaving the slight clearance. CONSTITUTION:A barrel type susceptor assembly body 11 is fitted to a rotary axis 13 lengthened to the upper part by perforating a base plate 16. A reaction chamber is formed by providing a bell jar 14 around the susceptor assembly body 11. A cylindrical body 15 made of quartz which is supported in one hand and has the slight clearance for the other hand is interposed between the lower end of the susceptor assembly body 11 and the upper surface of base plate 16. For example, the cylindrical body 15 is provided to the position having the slight clearance unhindering the rotation of the susceptor 11 in the lower direction of the bell jar 14. By this mechanism, the inflow of the reaction gas to the lower side of the susceptor assembly body 11 is interrupted and generation of refuse is prevented and also the gas flow in the bell jar 14 is made smooth.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明はシリコン等の半導体物質基板(以下ウェハとい
う)にシリコン結晶等を気相成長させるバレル型の気相
5X、長装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field to which the Invention Pertains] The present invention relates to a barrel-type vapor phase 5X long apparatus for vapor phase growth of silicon crystals and the like on semiconductor material substrates (hereinafter referred to as wafers) such as silicon.

〔従来技術〕[Prior art]

従来実用化されているランプ加熱によるバレル型の気相
成長装置は、サセプタを回転させる回転軸の駆動源を上
方に設け、反応管の上方に反応ガスなどのガスを供給し
、反応管の下部中央に設けた排気口から排気するように
なっていた。この方式はカスの流れは問題ないが1、駆
動源が上方にあるため、回転部からのゴミがウェハに落
下して汚染を生ずる欠点がある。そこで、駆動源を下方
に位置させる方式のものも提案されているが、この方式
ではベル形の反応管すなわちベルジャの下部中央に排気
口を位置させることはできず、外周側に設けた複数個の
排気口から排気しなけ汎ばならない1.ところが、この
場合サセプタの下側に反応ガスが流れ込んでサセプタ回
転軸ならびにベースプレートにウオールデボを生じさせ
ると共に、このウオールデボを剥離浮遊させて舞い上げ
させ、ウェハに付着させ、良好な気相成長を阻害し、捷
たベルジャ内の反応ガスの流A’i乱す等の欠点がある
、。
The barrel-type vapor phase growth apparatus using lamp heating, which has been put into practical use in the past, has a driving source for the rotating shaft that rotates the susceptor located above, supplies gas such as a reaction gas above the reaction tube, and supplies gas such as a reaction gas above the reaction tube. Exhaust air was to be exhausted from an exhaust port in the center. This method has no problem with the flow of debris; however, since the driving source is located above, there is a drawback that debris from the rotating part falls onto the wafer and causes contamination. Therefore, a method has been proposed in which the drive source is located below, but with this method, the exhaust port cannot be located in the center of the bottom of the bell-shaped reaction tube, that is, the bell jar. 1. The exhaust must be exhausted from the exhaust port. However, in this case, the reaction gas flows into the lower side of the susceptor, causing wall debos on the susceptor rotating shaft and base plate, and the wall debos are separated, floated up, and attached to the wafer, impeding good vapor phase growth. However, there are disadvantages such as disturbing the flow A'i of the reactant gas in the bell jar.

〔発明の目的〕[Purpose of the invention]

本発明はこのLうな欠点を除外したものでその目的は、
サセプタ下gII+に反応ガスを流入させないことに7
fljウオールデポの発生を阻止すると共にガスの流7
”Lを円滑にし、もって良好な気相成長を可能にした気
相成長装置を提供することにある。
The present invention eliminates this disadvantage, and its purpose is to
7. In order to prevent the reaction gas from flowing into gII+ under the susceptor.
flj to prevent wall deposits and reduce gas flow 7
``Our objective is to provide a vapor phase growth apparatus that makes L smooth and thereby enables good vapor phase growth.

〔発明の要点〕[Key points of the invention]

本発明の気相5′に、長装置は、ベースプレートと、ベ
ースプレートを貫通して上方に伸びる回転棚と、回転@
に取付けられたバレル型のサセプタ組立体と、下端がベ
ースグレートに密封可能になされサセプタ組立体の周囲
に反応室を形成するベルジャと全具備した気相成長装[
Vcおいて、サセプタ組立体の下端とベースプレート上
面との間に、両者のうちの一方に支持されると共に他方
に対してわずか全すき間を有する石英製の円筒体を介在
させたことを特徴にしている。
In the gas phase 5' of the present invention, the long device includes a base plate, a rotating shelf extending upwardly through the base plate, and a rotating @
The vapor phase growth system is fully equipped with a barrel-shaped susceptor assembly attached to the base plate, and a bell jar whose lower end can be sealed to the base grate to form a reaction chamber around the susceptor assembly.
Vc, a cylindrical body made of quartz is interposed between the lower end of the susceptor assembly and the upper surface of the base plate, and is supported by one of the two and has a slight gap from the other. There is.

〔発明の実施例〕 以下本発明の一実施例を示した図について説明する。、
第1図においてサセプタ組立体11は複数枚の短冊状を
したサセプタが多角形状に配置されると共に、軸心に対
し勾配を有しかつ上面および下面はフタ状体によりおお
われておりその外周には多数のウェハ12が取付けであ
る。サセプタ組立体11は上下のフタ状体に固着したセ
ラミックス等の非金属製かつ中空の回転軸131Cより
両方向へ回転されるようになされており、その外周およ
び上方は石英製のベルジャ14にエリおおわれて込る。
[Embodiment of the Invention] A diagram showing an embodiment of the present invention will be described below. ,
In FIG. 1, the susceptor assembly 11 has a plurality of strip-shaped susceptors arranged in a polygonal shape, and has a slope with respect to the axis, and the upper and lower surfaces are covered with a lid-like body, and the outer periphery is covered with a lid-like body. A number of wafers 12 are attached. The susceptor assembly 11 is configured to be rotated in both directions by a hollow rotating shaft 131C made of non-metallic material such as ceramics fixed to the upper and lower lid-like bodies, and its outer periphery and upper part are covered with a bell jar 14 made of quartz. Enter.

ベルジャ14の下方にはこれと同心かつサセプタ組立体
110回転を妨げない近接したわずか々隙間を有する位
置に石英製の円筒体15があり、ベルジャ14お工び円
筒体15は共にステンレス鋼製のベースプレー)16上
に密接した状態で載置されている。なお円筒体15はサ
セプタ組立体してベルジャ14とサセプタ組立体11お
:び円筒体15に工り形成される空間を反応室といい、
回転a]13はベースプレート16を気密に貫通してい
る。ベルジャ14の下側内周と円筒体15の下す外周と
の間[はベースプレート16表面からΔ 金属イオンの放出を阻止するため石英リング194へが
敷かれており、この石英リング19Aとベースプレート
16には反応室のガスを外部に排出するための孔19B
があけである。
Below the bell jar 14, there is a cylindrical body 15 made of quartz that is concentric with the bell jar 14 and located close to it with a slight gap that does not hinder the rotation of the susceptor assembly 110. (base play) 16 in close contact with each other. The cylindrical body 15 is assembled with a susceptor, and the space formed between the bell jar 14, the susceptor assembly 11, and the cylindrical body 15 is called a reaction chamber.
The rotation a] 13 passes through the base plate 16 in a gas-tight manner. A quartz ring 194 is placed between the lower inner periphery of the bell jar 14 and the lower outer periphery of the cylindrical body 15 to prevent release of metal ions from the surface of the base plate 16. is a hole 19B for discharging gas from the reaction chamber to the outside.
It's open.

回転軸13の中心にはそnぞれ固定の内管17お工び外
管18の2重管が設けられ、内管17がらばN2或いば
H2のガスが上方に向って流れ外管18(は上端で複数
C図では2本のみ示しである)に分岐してノズルIRA
になって下方にあるウェハ12に向って反応カスが流庇
るようになっている。なお反応ガスの流1.の細部は後
述する。
A double tube consisting of a fixed inner tube 17 and an outer tube 18 is provided at the center of the rotating shaft 13, and from the inner tube 17, N2 or H2 gas flows upward to the outer tube. 18 (is the upper end and only two are shown in the figure) and the nozzle IRA
As a result, the reaction residue flows toward the wafer 12 located below. Note that the reaction gas flow 1. The details will be described later.

ベルジャ14の下部外周には、これを取り囲みベースプ
レート】6の外周に配置されたベース20とによりベル
ジャ14側のみを開放した排気A’121が設けられ、
この排気ダク) 21 U第2図に示す排気管22に接
続されて(八る。排気ダクト21上には、多数のランプ
23を有するランプハウス24が、第2図に示すように
、ベルジャ14を取り囲んで配置されている。ランプハ
ウス24の背面側にはA冷却流体供給部25が形成され
、!(冷却流体供給部25[C!ri不図示の送風機訃
工び冷却機からの冷却空気が吹き込まれ、冷却空を冷却
するようになっている。
An exhaust A' 121 is provided on the outer periphery of the lower part of the bell jar 14, surrounding it and with a base 20 placed on the outer periphery of the base plate 6, and opening only the bell jar 14 side.
This exhaust duct) 21U is connected to the exhaust pipe 22 shown in FIG. A cooling fluid supply section 25 is formed on the back side of the lamp house 24, and the cooling fluid supply section 25 [C! is blown into the air to cool the cooling air.

ベース20(Cは排気l°タクト1に隣擬して昇降お工
び回転機構28が設けてあり、同機鷹28は上端に腕2
9が固着され、腕29の先端は把持具30にエリベルジ
ャ14の頂部に固着した把持部31を離脱可能に把持し
ている。また腕29の先端は把持具32にエリB冷却流
体供給部33を取付けている。B冷却流体供給部33の
下端はランプハウス24の上面に載置されると共に、そ
の内壁34にに多数の孔35があけらnているためA冷
却流体供給部25と同様に冷却空気がベルジャ14の上
部に吹きつけられる。ここでベルジャ]4とB冷却流体
供給部33とは腕29に取付けられている1こめ、同時
に昇降可能であり、ベルジャ14の下面がノズル18A
の上方まで上昇した後は腕29を旋回させることにエリ
ベルジャ14お工びB冷却流体供給部33を側方へ旋回
するこ24は端部Aお工びBが互いに回動自在に連結さ
れ、下側中央は切離されるようになっており、同図に点
線で示した位置に移動可能になっている。
The base 20 (C is equipped with an elevating and rotating mechanism 28 adjacent to the exhaust l° tact 1, and the hawk 28 has an arm 2 at the upper end.
9 is fixed, and the tip of the arm 29 removably grips a grip part 31 fixed to the top of the lever 14 in a gripping tool 30. Further, an ERI-B cooling fluid supply section 33 is attached to a gripping tool 32 at the tip of the arm 29. The lower end of the B cooling fluid supply section 33 is placed on the upper surface of the lamp house 24, and the inner wall 34 has a large number of holes 35, so that the cooling air flows through the bell jar like the A cooling fluid supply section 25. It is sprayed on the top of 14. Here, the bell jar 14 and the B cooling fluid supply section 33 are attached to the arm 29 and can be raised and lowered at the same time, and the lower surface of the bell jar 14 is connected to the nozzle 18A.
After rising to the upper part, the arm 29 is rotated, and the end portions A and B are rotatably connected to each other, and the end portions A and B are pivoted to the side. The lower center can be separated and moved to the position indicated by the dotted line in the figure.

Aお工ひB冷却流体供給部25お工び33から吹き出さ
れた冷却空気はベルジャの外周およびランプ23を冷却
しながら下降し、排気i°タクト1内に入った後1図の
上方に示した排気管22から外部に強制的に排出される
。反応ガスの流れるノズル18Aは図に示すようにこの
例では放射状に8本設けてあり、先端近<Kは下向きの
孔36(第1図参照)が1個あけてあり、かつこの孔3
6は8本のノズル18Aの2本或いは4本を組にして回
転軸13の軸心からの距離を変えることにエリ、軸心に
対し勾配を有するサセプタ組立体11上の軸心からの距
離の異なるウェハ12の各々に対応して反応カスが噴出
するようにしである。或いはこの構成のほかノズル18
Aの2本を組にしてそれぞれの先端近くに孔36を互い
に向き合う形で傾斜して設けることにエリ、噴出した2
つの反応ガスの流rLが倫突して下向きの広いガス流を
形成するようにしても工い。
The cooling air blown out from the cooling fluid supply section 25 and the cooling fluid supply section 33 descends while cooling the outer circumference of the bell jar and the lamp 23, and after entering the exhaust tact 1, is shown in the upper part of Fig. 1. It is forcibly discharged to the outside from the exhaust pipe 22. As shown in the figure, the eight nozzles 18A through which the reaction gas flows are provided radially in this example.
6 is a distance from the axis on the susceptor assembly 11 having a slope with respect to the axis, in order to change the distance from the axis of the rotating shaft 13 by combining two or four of the eight nozzles 18A. The reaction scum is ejected corresponding to each of the different wafers 12. Alternatively, in addition to this configuration, the nozzle 18
It was a good idea to make two of A as a set and provide holes 36 near the tip of each at an angle facing each other.
The two reactant gas flows rL may collide to form a wide downward gas flow.

次に「11J述した実施例の動作を説明する。昇降等の
機構28に工りベルジャ14とB冷却流体供給品33′
fr:上昇させ、次いでランプハウス24を第28によ
りベルジャ14とB冷却流体供給部33全下降させて第
1図の状態にする。この状態で内管17と外管18から
N2ガスを噴出して空気をパージし、空気のパージが終
了した後、N2ガスにより前記N2ガスをバージレ、次
いでランプ23に工り加熱する。加熱にエリウェハ12
が所泥温度に達すると外管18従ってノズル18Aから
N2ガスと共にシラ/等の反応カスを噴出させることV
こエリ気相1jX、長を行なう。
Next, the operation of the embodiment described in ``11J'' will be explained.
fr: The lamp house 24 is raised, and then the bell jar 14 and the B cooling fluid supply section 33 are completely lowered to the state shown in FIG. 1. In this state, N2 gas is ejected from the inner tube 17 and the outer tube 18 to purge the air, and after the air purging is completed, the N2 gas is applied to the verge, and then to the lamp 23 and heated. 12 wafers for heating
When the temperature reaches the sludge temperature, reaction scum such as slag/etc. is ejected from the outer tube 18 and hence from the nozzle 18A together with N2 gas.
Perform the vapor phase 1jX and length.

このとき内管17からはそのままN2ガスヲ噴出させる
ことにエリベルジャ14の上部空間をN2ガスで充満せ
しめ、もってベルジャ14の上部壁面の冷却と上部壁面
への反応ガスの接触を阻止する。そしてこnらのガスは
ペースプレート16の穴19Bから排出される。このと
きサセプタ組立体着寺とペースプレート16の間に円筒
体15があるため、ガスがサセプタ組立体誌輸の下部に
回り込んでゴミを舞い上げたり、ベルジャ14内のガス
流を乱したりすることなく円滑に排出される。ランプ2
3による加熱と同時に送風機および冷却機からの冷却空
気は、Aお工びB冷却流体供給部25お工び33の孔2
6および35を通ッテペルジャ14お工びランプ23に
吹きつけられ、ラング23とベルジャ】4t−冷却した
後ベルジャ14に沿って下降し、排気i゛クト1から排
気管22にエリ強制的に排気される。この風量は石英ベ
ルジャ】4の大きさによるが数10rr?/分から数1
0(1y7//分と極めて大量であるが、排気ダクト2
1はベルジャ14の下方を囲んで円周上に大きい几め排
気抵抗は小さく排気管22から吸引することにより円滑
な排気が可能である。
At this time, N2 gas is directly ejected from the inner pipe 17, and the upper space of the bell jar 14 is filled with N2 gas, thereby cooling the upper wall surface of the bell jar 14 and preventing contact of the reaction gas with the upper wall surface. These gases are then exhausted from the holes 19B of the pace plate 16. At this time, since the cylindrical body 15 is located between the susceptor assembly assembly and the pace plate 16, gas may enter the lower part of the susceptor assembly and kick up dust or disturb the gas flow inside the belljar 14. It is ejected smoothly without any damage. lamp 2
At the same time as heating by 3, the cooling air from the blower and cooler is supplied to the hole 2 of the cooling fluid supply section 25 of the blower 33.
6 and 35 are blown onto the lamp 23 of the perger 14, and after cooling the rung 23 and the bell jar 4t, it descends along the bell jar 14 and is forcibly exhausted from the exhaust pipe 22 from the exhaust pipe 14. be done. The air volume is several tens of rr depending on the size of the quartz bell jar]4. /minute to number 1
0 (1y7//min, which is an extremely large amount, but the exhaust duct 2
1 surrounds the lower part of the bell jar 14 and has a large circumference, so that the exhaust resistance is small and suction from the exhaust pipe 22 allows smooth exhaust.

一定時間気相成長が行われた後ランプ23を消して加熱
を停止すると共に、両管]7お工び18からN2ガスの
みを噴出させて反応ガスのパージを行いながらベルジャ
14を介してウェハ12を冷却し、次いでN2ガスを停
止してN2ガスを噴出することに、!:クベルジャ14
内をN2ガスにする。最後にベルジャ】4等を昇降等の
機構28により上昇させると共に、ランプハウス24を
開いてウェハ12を取り出せば一連の気相成長作業は終
了する。なおベルジャ】4の洗浄が必要な場合はベルジ
ャ14を上昇後昇降および回転機構28により側方へ旋
回させた後、下降させて台(図示せず)上vcH床させ
、ベルジャ14を把持具30から離脱してか今洗浄する
After vapor phase growth has been carried out for a certain period of time, the lamp 23 is turned off to stop heating, and the wafer is transferred through the belljar 14 while purging the reaction gas by spouting only N2 gas from both tubes 18. 12, then stop the N2 gas and blow out the N2 gas! :Kuberja 14
Turn the inside into N2 gas. Finally, the bell jar 4 and the like are raised by a lifting mechanism 28, the lamp house 24 is opened, and the wafer 12 is taken out, thereby completing the series of vapor phase growth operations. If the bell jar 4 needs to be cleaned, the bell jar 14 is raised, then rotated to the side by the lifting and rotating mechanism 28, and then lowered and placed on the vcH floor on a stand (not shown). I'm going to take it off and wash it now.

〔発明の効果〕〔Effect of the invention〕

本発明の気相成長装置Piは以上説明した工うに、ペー
スプレートを貝通して上方に伸びる回転INに取付けら
れたバレル型のサセプタ組立体と、下端をペースプレー
トに密封可能になされかつサセプタ組立体の周囲に反応
室を形放するベルジャと、サセプタ組立体の下端とベー
スプレート上面との間に、両者のうちの一万に支持され
ると共に他方に対してわずかな隙間を有する石英鋤の円
筒体とを主な構成要件にしている。
The vapor phase growth apparatus Pi of the present invention, as described above, includes a barrel-shaped susceptor assembly attached to the rotating IN that extends upward through the pace plate, and a susceptor assembly whose lower end can be sealed to the pace plate. A bell jar that forms a reaction chamber around the solid body, and a cylinder made of quartz plow that is supported by ten thousand of the two and has a slight gap from the other between the lower end of the susceptor assembly and the upper surface of the base plate. The main component is the body.

そしてこの構成にエリサセプタ組立体の下側への反応ガ
ス流入は円筒体に遮えぎられでなく、従ってサセプタ組
立体の下方でのウオールデボの発生および七nに基〈ゴ
ミの発生が阻止され、さらにベルジャ内のガスの流九が
円滑になるため良好な気相成長が可能になる利点を有す
る。
In this configuration, the reaction gas inflow to the lower side of the susceptor assembly is not blocked by the cylindrical body, so that the occurrence of wall debos and the generation of dust under the susceptor assembly are prevented. Furthermore, since the flow of gas inside the bell jar becomes smooth, there is an advantage that good vapor phase growth is possible.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明の一実施例を示し第1図は断面図、42図は
第1図の2−2線断面図である。 11・・・サセプタ組立体、12・・・ウェハ、13・
・・回・駈軸、14・・・ベルジャ、15・・・円筒体
、16・・・ペースプレート、17・・・内管、18・
・・外管、23・・・ランプ、24・・・ランプハウス
、25.33・・・冷却流体供給部、28・・・昇降お
よび回転機構。 東芝機械株式会社 片1図 片2図 手続補正書(方式) %式% ]、 事件の表示 昭和59年特許願第209418号 2、 発明の名称 気相成長装置な 3 補正をする者
The drawings show one embodiment of the present invention, and FIG. 1 is a sectional view, and FIG. 42 is a sectional view taken along the line 2--2 in FIG. 11... Susceptor assembly, 12... Wafer, 13...
... Rotary canter shaft, 14... Belljar, 15... Cylindrical body, 16... Pace plate, 17... Inner tube, 18...
... Outer tube, 23... Lamp, 24... Lamp house, 25.33... Cooling fluid supply section, 28... Lifting and rotation mechanism. Toshiba Machine Co., Ltd. Piece 1 Figure Piece 2 Procedural Amendment (Method) % Formula % ], Indication of the case 1982 Patent Application No. 209418 2, Name of the invention Vapor phase growth device, etc. 3 Person making the amendment

Claims (1)

【特許請求の範囲】[Claims] ベースプレートと、同ベースプレートを貫通して上方に
伸びる回転軸と、同回転軸に取付けられたバレル型のサ
セプタ組立体と、下端が前記ベースプレートに密封可能
になされ前記サセプタ組立体の周囲に反応室を形成する
ベルジャとを具備した気相成長装置において、サセプタ
組立体の下端とベースプレート上面との間に、両者のう
ちの一方に支持されると共に他方に対してわずかなすき
間を有する石英製の円筒体を介在させたことを特徴とす
る気相成長装置。
a base plate, a rotating shaft extending upwardly through the base plate, a barrel-shaped susceptor assembly attached to the rotating shaft, and a reaction chamber having a lower end sealed to the base plate and surrounding the susceptor assembly. A cylindrical body made of quartz is provided between the lower end of the susceptor assembly and the upper surface of the base plate, and is supported by one of the two and has a slight gap from the other. A vapor phase growth apparatus characterized by interposing.
JP20947884A 1984-10-05 1984-10-05 Gas phase growth apparatus Granted JPS6186499A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20947884A JPS6186499A (en) 1984-10-05 1984-10-05 Gas phase growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20947884A JPS6186499A (en) 1984-10-05 1984-10-05 Gas phase growth apparatus

Publications (2)

Publication Number Publication Date
JPS6186499A true JPS6186499A (en) 1986-05-01
JPH0310597B2 JPH0310597B2 (en) 1991-02-14

Family

ID=16573507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20947884A Granted JPS6186499A (en) 1984-10-05 1984-10-05 Gas phase growth apparatus

Country Status (1)

Country Link
JP (1) JPS6186499A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019015U (en) * 1973-06-14 1975-03-03

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019015U (en) * 1973-06-14 1975-03-03

Also Published As

Publication number Publication date
JPH0310597B2 (en) 1991-02-14

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