JPS6185693A - イオン注入バブルメモリ素子 - Google Patents

イオン注入バブルメモリ素子

Info

Publication number
JPS6185693A
JPS6185693A JP59205510A JP20551084A JPS6185693A JP S6185693 A JPS6185693 A JP S6185693A JP 59205510 A JP59205510 A JP 59205510A JP 20551084 A JP20551084 A JP 20551084A JP S6185693 A JPS6185693 A JP S6185693A
Authority
JP
Japan
Prior art keywords
ion
bubble
memory element
transfer path
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59205510A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6342353B2 (enrdf_load_stackoverflow
Inventor
Yoshio Sato
良夫 佐藤
Tsutomu Miyashita
勉 宮下
Makoto Ohashi
誠 大橋
Keiichi Betsui
圭一 別井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59205510A priority Critical patent/JPS6185693A/ja
Publication of JPS6185693A publication Critical patent/JPS6185693A/ja
Publication of JPS6342353B2 publication Critical patent/JPS6342353B2/ja
Granted legal-status Critical Current

Links

JP59205510A 1984-10-02 1984-10-02 イオン注入バブルメモリ素子 Granted JPS6185693A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59205510A JPS6185693A (ja) 1984-10-02 1984-10-02 イオン注入バブルメモリ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59205510A JPS6185693A (ja) 1984-10-02 1984-10-02 イオン注入バブルメモリ素子

Publications (2)

Publication Number Publication Date
JPS6185693A true JPS6185693A (ja) 1986-05-01
JPS6342353B2 JPS6342353B2 (enrdf_load_stackoverflow) 1988-08-23

Family

ID=16508059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59205510A Granted JPS6185693A (ja) 1984-10-02 1984-10-02 イオン注入バブルメモリ素子

Country Status (1)

Country Link
JP (1) JPS6185693A (enrdf_load_stackoverflow)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON MAGNETICS=1982 *

Also Published As

Publication number Publication date
JPS6342353B2 (enrdf_load_stackoverflow) 1988-08-23

Similar Documents

Publication Publication Date Title
JPS6185693A (ja) イオン注入バブルメモリ素子
Dove et al. Domain‐wall behavior in ion‐implanted garnet layers for 1‐μm bubble devices
JPS5896705A (ja) 磁気バブルメモリ素子
EP0087910B1 (en) Ion-implanted magnetic bubble memory device
JPS6339190A (ja) 磁気バブルメモリ素子
JPS6242387A (ja) 磁気バブルメモリ素子
JPS623513B2 (enrdf_load_stackoverflow)
JPS6369091A (ja) 磁気バブルメモリ素子
JPS63140481A (ja) 磁気バブルメモリ用転送路
JPS59162684A (ja) イオン注入バブルデバイス
JPS6050693A (ja) 磁気バブルメモリデバイス
JPS6040116B2 (ja) イオン注入バブルデバイスにおける駆動パタ−ンのアウトサイドタ−ン形状
JPS645396B2 (enrdf_load_stackoverflow)
JPS6330717B2 (enrdf_load_stackoverflow)
JPS6341158B2 (enrdf_load_stackoverflow)
JPS5916189A (ja) 磁気バブルメモリ素子
JPS60117473A (ja) ブロツホラインメモリ
JPS6212593B2 (enrdf_load_stackoverflow)
JPS6020233Y2 (ja) 円筒磁区転送パタン
JPS60111387A (ja) 磁気バブルメモリ素子
JPS592107B2 (ja) バブル磁区転送パタ−ン
JPS5998370A (ja) 磁気バブルメモリデバイスの駆動方法
JPS6010486A (ja) 磁気バブルメモリ素子
JPS62189691A (ja) ハイブリツド磁気バブルメモリ素子
JPS63306587A (ja) 磁気バブル転送パタ−ン