JPS6185693A - Ion implantation bubble memory element - Google Patents

Abstract

PURPOSE:To improve a margin and to prevent an oscillating error of a bubble at the turning-up part by making the prescribed shape of a transmission line at the turning-up part of the folding type minor loop of an ion implantation bubble memory element. CONSTITUTION:Into an ion implantation area 10 except a bubble transmission line, a necessary ion is implantated, and a folding type minor loop transmission line 11 is formed. In the crystallizing direction of the transmission line 11, on the turning-up transmission line between an inlet transmission line of a stripe difficulty shaft direction <1, -2, and 1> and an outlet transmission line of a stripe easiness shaft direction <-1, 2, and -1>, cusps will not be found between a starting point and a terminal point besides cusps 12 and 13 of the starting point and a terminal point, and an angle tip 14 is installed between the starting point and the terminal point. By the shape, the bisector direction of the cusps 12 and 13 toes to [-2, 1, and 1] and [1, 1, and -2] and goes to the direction near <1, -2, and 1> direction, the margin is improved and an oscillation error occurrence of the bubble in the folding part can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ion-implanted bubble memory element used as a memory device for electronic computing devices and the like.

The ion-implanted bubble memory device is shown in the plan view of FIG.
As shown in the cross-sectional view of the figure, a thin film 2 of magnetic garnet that will become a crystal for bubbles is formed on a gadolinium e gallium garnet substrate 1 by liquid phase epitaxial growth. 4 H, Ne
, He, and other ions are implanted to form a puzzle transfer path, which is then used as a metaphor.

In the nine elements formed in this way, the direction of the easy magnetization axis of the turn region 3 is perpendicular to the in-plane direction up to the original 1 as shown by the arrow a, but the easy magnetization axis of the nine region 4 is ion-implanted. The direction is the same as the in-plane direction, as shown by the arrow. Therefore, the bubbles 5 are transferred along the periphery of the pattern 30 as shown by the arrow C by the rotating magnetic field. This pattern has a shape in which three circles or squares are arranged in succession so that some of them overlap, and unlike conventional permalloy patterns, there is no need for a gap, so the dimension nt change can be gentle, and the pattern is It can be made smaller and achieves high-density electrification.

However, in this ion-implanted couple memory element, as shown in Figure 7, there are 120 axes in which bubbles are likely to be striped out in three directions (1), (II), and (III).
Exist at intervals of 12,000 ° and these 12,000 intervals of heavy magnetization! For f11, the above connected disk pattern 3
Depending on which direction the disk patterns forming the K-column are arranged in the supertra, ri9.

There are five bubble movement paths: Pad track b, Gutsudora, Rig.

[Prior Art and Problems to be Solved by the Invention] FIG. 8 is a diagram showing the inside turn of a folded minor loose in a conventional ion implantation bubble memory device having a major minor configuration.

In the figure, 6 is an ion implantation region, and 7 is a bubble transfer path H.
x is the driving magnetic field direction, [121], [112].

(211:) indicates the crystal orientation, respectively.

This conventional example is a minor loose type that is folded back from the (121') direction to the (121) direction, and the straight transmission line has a snake-shaped pattern. Naoku121> means [:121], (
112LC211).

A cusp 8 is included between the transfer section a-b of this pattern 7 #i folding part, and the bisecting direction of the opening angle of this cusp 8 is (121) and the lick margin is equal to that of the pad track. It was causing deterioration. In order to improve this, a shape as shown in FIG. 9 (each symbol is the same as in FIG. 8) has been considered, but even in this pattern [01
1] is equivalent to that of the good track, but it is still not sufficient, and the opening angle of the cusp 8 itself is narrow, making it difficult to use high-density devices (16 Mbit/tan 2) that require fine patterns.
There is a problem that it is not suitable for the above).

[A bright way to solve problems]

The present invention provides an ion-implanted (pull) memory element that solves the above-mentioned problems. Easy from axial direction ('
121'), there is no cusp in the transfer path between the upward straight transfer path where the bubble enters the folded portion and the straight transfer path on the exit side.
And that fr sending j! This is achieved by using an ion-implanted bubble memory element characterized by a 2h5j mountain shape.

[For production]

In the above ion-implanted bubble memory element, there is no cusp between the starting point and the ending point of the folded part, and the direction of the bisector of the cusp including the sixth starting point and the cusp including the ending point is ('721). Since it goes to nearby areas, it becomes equivalent to that of a super truck, improving margins. Furthermore, since the transmission path from the starting point to the ending point of the folding section is mountain-shaped, errors in capturing bubbles between the starting point and the ending point are prevented.

〔Illustration〕

Below are the drawings! Examples of the present invention will now be described in detail.

Fig. 1 shows the main parts of an embodiment of the present invention. This example is (
This is an inside turn that is folded back from the 121) direction to the (121) direction, and the straight transfer path is a folding pattern. In the same figure, 10 is an ion implantation region, 11 is a bubble transfer path, I(R is a driving magnetic field direction, (721), (11
2) and (:211) indicate the crystal orientation, respectively.

In this embodiment, as shown in the figure, there is no cusp between the starting point 12 and the ending point 13 of the folded portion, and only a chevron-shaped tip 14 is provided.

In this embodiment configured in this way, the directions of the bisecting halves 15 and 115 of the cusp 12 including the starting point of the folding portion and the cusp 13 including the ending point are directed in a direction near <j21), so that a super track is achieved. This will improve margins.

According to experiments, the relationship between the height of the tip 14 and the bias margin is as shown in FIG. In the figure, the tip height is set to 1, and it can be seen that the average diameter margin of the bubble is improved on the low drive, low bias side. Also a = 00
In this case, cusp 12.1 in Figure 1! Since the bubble oscillates between i, the margin deteriorates.

FIG. 3 is a conceptual diagram comparing the margin of this embodiment with that of the conventional column. In Figure VI, the horizontal axis represents the rotational driving magnetic field HD, and the vertical axis represents the bias magnetic field HB. The margins of the conventional example shown in FIG. 9 are shown respectively. In addition, the trial is conducted as a crystal h = (1,6, Sw
=0.6.4xMq=1050G, Hk=27000e
Nomo CI, ion implantation conditions Ne, 30K
eV, I X 10”/crJI2:Ne+, 1
20KeV, 2X10”/c*2: H2, 36Ke
V.

3 of 2×10/m was implanted, and the transfer path period was 2.
μm (equivalent to 16M/(yy2)).From the same figure, it can be seen that this example (curved line) has a better blue electric current than the conventional example (curved lines B and C).

FIG. 4 is a diagram showing another embodiment. In the same figure, the first
The same parts as in the figures are indicated with the same reference numerals.

This embodiment has a continuous disk type transfer path, is designed based on the same idea as the previous embodiment, and has an optical system, and therefore has the same effect.

[light effect]

As explained above, according to the present invention, no cusp is provided between the starting point and the ending point of the folded portion of the minor loop.
By providing only a mountain-shaped tip, the directions of the bisectors of the cusp including the start point and the cusp including the end point are directed to the vicinity of 121〉, making it equivalent to the super truck and improving the margin. This has the effect of preventing bubble vibration errors between the starting point and the ending point due to the mountain-shaped tiller.

[Brief explanation of the drawing]

FIG. 1 is a plan view showing the essential parts of an embodiment of the ion-implanted bubble memory element of the present invention, FIG. 2 is a diagram showing the relationship between the tip height and bias margin, and FIG. A diagram showing the bias margin in comparison with a conventional example, FIG. 4 is a diagram showing another embodiment of the present invention, FIG. 5 is a diagram for explaining a conventional ion-implanted bubble memory element, and FIG. Figure 7 is a cross-sectional view taken along the line ■-■ in Figure 5, and Figure 7 is the same for explaining the relationship between the crystal orientation and the rolling path of the ciple crystal. FIGS. 8 and 9 are diagrams for explaining the folding portion of minor looseness in a conventional ion-implanted bubble memory element. In the figures, 10 is an ion-implanted region, 11 is a bubble transfer path,
HFI driving magnetic field direction, [:121], (:112). (2111 is the crystal orientation, 17.13 is the cusp, and 14 is the tip.

Claims (1)

[Claims] 1. Stripe difficult axis direction <1@2@1 which is part of the folded minor loop of the ion-implanted bubble memory device
Transfer between the straight transfer path on the side where the bubble enters the folded portion and the straight transfer path on the side where the bubble exits in the inside type folded portion that folds from An ion-implanted bubble memory element characterized in that there are no cusps in the path and the transfer path is mountain-shaped. 2. The ion-implanted bubble memory device according to claim 1, wherein the height of the mountain-shaped transfer path of the folded portion is 1/2 or more of the average diameter of the bubbles.