JPH03122888A - Magnetic bubble element - Google Patents

Abstract

PURPOSE:To stabilize the transfer of bubbles and to suppress the malfunction of transfer by introducing discontinuous parts into the parts where the transfer is unstable and the malfunction is liable to occur. CONSTITUTION:This element has the discontinuous and uncoupled gap parts G in the junction parts E where the bubbles transfer from horizontal part patterns 10-1 to vertical part patterns 10-2, i.e. the parts E emitting to the transfer path of the straight parts B from the corner parts A. The transfer of the bubbles in the arrow direction in these parts is stabilized and the malfunction is prevented by the introduction of the discontinuous parts G. The magnetic bubble element which eliminates the malfunction and has the improved bubble transfer paths is obtd. in this way.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetic bubble element having a magnetic bubble transfer path using an ion implantation method.

[Prior Art] In place of the conventional permalloy thin film pattern, attempts have been made to use an ion implantation type transfer path pattern as a bubble transfer path in a magnetic bubble element.

It is known that this makes it possible to realize highly integrated devices. The ion implantation transfer path is formed by selectively implanting ions such as H2'', He'', Ne+, etc. into the surface of a magnetic film that serves as a magnetic bubble medium. By magnetizing this ion implantation layer with an in-plane rotating magnetic field HR, magnetic bubbles are transferred along the boundaries of the ion implantation layer pattern. For this kind of bubble transfer method, for example,
I E' Trans.

Magn, MAG-13, No. 6 P, 1744 (
1977).

[Problems to be Solved by the Invention] FIG. 2 is an enlarged schematic diagram of the main part of a magnetic bubble transfer path of a conventional magnetic bubble element, and the following description will be made accordingly.

FIG. 2(a) is an example of a plan view of a transfer path pattern, and
Figure (b) shows an example of the cross-sectional view. In the plan view (a), reference numeral 10 indicates a transfer path using an ion implantation method for transferring magnetic bubbles, and an external process 2 of 10 is a region where ions are implanted. In the cross-sectional view (b), reference numeral 1 denotes a bubble material layer made of a magnetic film in which magnetic bubbles Bu exist. Partially on the surface of this layer 82
By implanting ions such as ", He", Ne+, etc.
A bubble transfer path 10 is formed, which is surrounded by the ion implantation region (2) and has a non-implantation region inside.

An insulating film 2 made of SiO2, SiO, polyimide resin, etc. is formed on this magnetic film. Further, there are layers such as a conductor button, a protective film, a bubble detector, and a bonding bat on top of this, but these are omitted in this figure because they are not directly related to the present invention.

Referring again to FIG. 2(a), the operating mechanism in which magnetic bubbles are transferred along the transfer path will be explained. By applying an in-plane rotating magnetic field I (R) from the outside and magnetizing the ion implantation layer around the transfer path 10, the bubbles are transferred to the transfer path 1.
It can be transferred along the 0 boundary. Rotating magnetic field H
If the rotation direction of R is counterclockwise as in the example in the figure, the bubbles are transferred in the direction of the arrow. Although the figure shows an example of a corner transfer path that changes the bubble transfer path by 90 degrees or 180 degrees, the conventional bubble transfer path 10 is characterized in that the bangs are connected continuously. Therefore,
The transfer path of bubbles transferred along these baton boundaries is also a continuous path on the bubble transfer path 10.

It is a characteristic of the conventional ion implantation transfer path that the bubble transfer path 10 is connected continuously in this way, and for this reason, the ion implantation transfer path is called a continuous disk. It was also called a ``batan'', and it was partly a prerequisite that they be connected in a continuous manner.

Now, in the conventional bubble transfer path having such a continuous bump configuration, as shown in FIG.
There was one problem in that the transfer became unstable and malfunctions were likely to occur at the connecting portion E where the transfer was made, and at the point E where the reclining portion A exited from the rectilinear portion B.

Therefore, an object of the present invention is to eliminate this malfunction and provide a magnetic bubble element with an improved bubble transfer path.

[Means for Solving the Problems] In order to achieve the above object, the present invention differs from the conventional system in which the bubble transfer path is constructed of continuously connected connecting tabs, in that discontinuous portions are placed on the bubble transfer path. It is distinctive in that it is structured in preparation for. Therefore, the object of the present invention is as follows: (1) A magnetic bubble element equipped with an ion implantation type magnetic bubble transfer path, in which a bubble diameter d of the used bubble is placed in the middle of the transfer path where magnetic bubbles are transferred. A magnetic bubble element comprising a transfer path provided with a discontinuous portion having a gap length of twice or less, and (2) preferably, (2) the discontinuous portion is arranged so that the bubble transfer direction of the bubble transfer path is 90'. Alternatively, this can be achieved by a magnetic bubble element provided in a corner transfer path that changes by 180°.

The preferable gap length of this discontinuous/disconnected gap portion G is not more than twice the bubble diameter d used, and more preferably a length substantially close to or slightly shorter than the bubble diameter d. In any case, a gap longer than twice the bubble diameter d used is not preferred.

[By introducing a discontinuous part in the E part of Fig. 2 (a) on the action cobubble transfer path, where the transfer becomes unstable and tends to cause malfunctions, the magnetization state of the ion implantation layer in the E part is changed by the rotating magnetic field. It is reliably magnetized and stabilized by HR, and bubble transfer malfunctions can be suppressed.

[Example code] An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view of a transfer path button showing an embodiment of the present invention, and the same parts as in FIG. 2 are designated by the same reference numerals. As is clear from this figure, the bubble exits the transfer path from the horizontal part A to the vertical part B at the connecting part E from the horizontal part button 10-1 to the vertical part button 10-2, and from the corner part A to the straight part B.
It is characterized by having a gap portion G that is discontinuous and unconnected.

It has been confirmed through experiments that the introduction of this discontinuous portion G stabilizes the transfer of the bubble in the direction of the arrow in this portion and prevents malfunctions. In this example, highly reliable transfer characteristics with no malfunctions were obtained using bubbles with a bubble diameter of d=0.8 μm and a gap length of 1 μm.

The shape of the button of the ion implantation transfer path 10 explained in the above embodiment shows one example of the present invention, and it can be applied to other shapes as well, and the same effect can be obtained. Needless to say, what you get.

[Effect of the invention] According to the present invention, bubble transfer can be stabilized.

We were able to realize a magnetic bubble element equipped with an ion implantation bubble transfer path that suppresses transfer malfunctions.

[Brief explanation of drawings]

FIG. 1 is a plan view of a bubble transfer path pattern according to an embodiment of the present invention, and FIGS. 2(a) and 2(b) are a plan view and a sectional view of a conventional bubble transfer path pattern. In the figure, 1...Magnetic film 2...Insulating film 10...
- Ion implantation bubble transfer path 101...Horizontal portion of the bubble transfer path 102...Vertical portion of the bubble transfer path

Claims (1)

[Claims] 1. A magnetic bubble element equipped with an ion implantation type magnetic bubble transfer path, in which a gap length on the transfer path where magnetic bubbles are transferred is not more than twice the bubble diameter d used. A magnetic bubble element comprising a transfer path with discontinuous portions. 2. The magnetic bubble element according to claim 1, wherein the discontinuous portion is provided in a corner transfer path that changes the bubble transfer direction of the bubble transfer path by 90 degrees or 180 degrees.