JPS6181139U - - Google Patents

Info

Publication number
JPS6181139U
JPS6181139U JP16623184U JP16623184U JPS6181139U JP S6181139 U JPS6181139 U JP S6181139U JP 16623184 U JP16623184 U JP 16623184U JP 16623184 U JP16623184 U JP 16623184U JP S6181139 U JPS6181139 U JP S6181139U
Authority
JP
Japan
Prior art keywords
nozzles
reaction gas
cvd apparatus
ejection hole
gas ejection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16623184U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16623184U priority Critical patent/JPS6181139U/ja
Publication of JPS6181139U publication Critical patent/JPS6181139U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP16623184U 1984-10-31 1984-10-31 Pending JPS6181139U (en:Method)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16623184U JPS6181139U (en:Method) 1984-10-31 1984-10-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16623184U JPS6181139U (en:Method) 1984-10-31 1984-10-31

Publications (1)

Publication Number Publication Date
JPS6181139U true JPS6181139U (en:Method) 1986-05-29

Family

ID=30724058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16623184U Pending JPS6181139U (en:Method) 1984-10-31 1984-10-31

Country Status (1)

Country Link
JP (1) JPS6181139U (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335239A (ja) * 1992-05-27 1993-12-17 Tokyo Electron Ltd 成膜装置
WO1998044175A1 (en) * 1997-03-28 1998-10-08 Super Silicon Crystal Research Institute Corp. Epitaxial growth furnace
KR19990066468A (ko) * 1998-01-26 1999-08-16 윤종용 반도체 장치의 알루미늄 샤워 헤드

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335239A (ja) * 1992-05-27 1993-12-17 Tokyo Electron Ltd 成膜装置
WO1998044175A1 (en) * 1997-03-28 1998-10-08 Super Silicon Crystal Research Institute Corp. Epitaxial growth furnace
KR19990066468A (ko) * 1998-01-26 1999-08-16 윤종용 반도체 장치의 알루미늄 샤워 헤드

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