JPS6181139U - - Google Patents

Info

Publication number
JPS6181139U
JPS6181139U JP16623184U JP16623184U JPS6181139U JP S6181139 U JPS6181139 U JP S6181139U JP 16623184 U JP16623184 U JP 16623184U JP 16623184 U JP16623184 U JP 16623184U JP S6181139 U JPS6181139 U JP S6181139U
Authority
JP
Japan
Prior art keywords
nozzles
reaction gas
cvd apparatus
ejection hole
gas ejection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16623184U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16623184U priority Critical patent/JPS6181139U/ja
Publication of JPS6181139U publication Critical patent/JPS6181139U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】
第１図は本考案の実施例であるＣＶＤ装置を説
明するための模式断面図、第２図はノズルの配置
を示す平面図、第３図は従来のＣＶＤ装置の反応
ガスの噴出孔を説明するための模式断面図、 図において、１１は反応ガスのタンク、１２は
配管、１３，１４，１５，１６，１７はノズル、
１８，１９，２０，２１，２２はマスフロー制御
装置、２３，２４，２５，２６，２７はラツパ部
をそれぞれ示している。

Claims (1)

    【実用新案登録請求の範囲】
  1. 反応ガスの噴出孔を、それぞれ流量が制御可能
    な複数のノズルに分割し、該複数のノズルを基板
    上に対向して配置したことを特徴とするＣＶＤ装
    置。
JP16623184U 1984-10-31 1984-10-31 Pending JPS6181139U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16623184U JPS6181139U (ja) 1984-10-31 1984-10-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16623184U JPS6181139U (ja) 1984-10-31 1984-10-31

Publications (1)

Publication Number Publication Date
JPS6181139U true JPS6181139U (ja) 1986-05-29

Family

ID=30724058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16623184U Pending JPS6181139U (ja) 1984-10-31 1984-10-31

Country Status (1)

Country Link
JP (1) JPS6181139U (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335239A (ja) * 1992-05-27 1993-12-17 Tokyo Electron Ltd 成膜装置
WO1998044175A1 (en) * 1997-03-28 1998-10-08 Super Silicon Crystal Research Institute Corp. Epitaxial growth furnace
KR19990066468A (ko) * 1998-01-26 1999-08-16 윤종용 반도체 장치의 알루미늄 샤워 헤드

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335239A (ja) * 1992-05-27 1993-12-17 Tokyo Electron Ltd 成膜装置
WO1998044175A1 (en) * 1997-03-28 1998-10-08 Super Silicon Crystal Research Institute Corp. Epitaxial growth furnace
KR19990066468A (ko) * 1998-01-26 1999-08-16 윤종용 반도체 장치의 알루미늄 샤워 헤드

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