JPS6180914A - Controlling method of gate driving circuit - Google Patents

Controlling method of gate driving circuit

Info

Publication number
JPS6180914A
JPS6180914A JP20171684A JP20171684A JPS6180914A JP S6180914 A JPS6180914 A JP S6180914A JP 20171684 A JP20171684 A JP 20171684A JP 20171684 A JP20171684 A JP 20171684A JP S6180914 A JPS6180914 A JP S6180914A
Authority
JP
Japan
Prior art keywords
signal
circuit
fet
period
gate driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20171684A
Other languages
Japanese (ja)
Inventor
Masayoshi Sato
正好 佐藤
Keijiro Sakai
慶次郎 酒井
Nobuyoshi Muto
信義 武藤
Hiroshi Fukui
宏 福井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20171684A priority Critical patent/JPS6180914A/en
Publication of JPS6180914A publication Critical patent/JPS6180914A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To control stably a titled circuit irrespective of whether the on-period and off-period of an MOS FET are long or short, by executing a gate driving control by using a D-FF, even in case an on-signal of the MOS FET used for an invertor of a PWM control is short. CONSTITUTION:When an on-off signal 15 of an FET becomes H and a clock 18 becomes H, an H output of a width of a one period portion is outputted from an AND circuit 20, and set to a gate driving circuit constituted of a flip- flop through a pulse transformer 22. On the contrary, when the signal 15 becomes L and the clock 18 becomes H, an H output is outputted from an AND circuit 21, the gate driving circuit of the FET is reset through a pulse transformer 23, and the FET is turned on during the time roughly corresponding to the signal 15. Even if the signal 15 is shorter than a time width of one period of the clock, when the clock becomes H, the FET can send out an on-driving signal from the gate driving circuit by a one period portion of the clock, and a malfunction can be prevented.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明はMOS−FETのゲート駆動回路の制御方式に
係Q、特に、モータ駆動用高周波MOSFETインバー
タに好適でろる。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a control method for a gate drive circuit of a MOS-FET, and is particularly suitable for a high-frequency MOSFET inverter for driving a motor.

〔発明の背景〕[Background of the invention]

MOS  FETのゲート駆動回路として、たとえば日
立評論VOL、 65 No、 4第39頁に示される
ようK、制御回路からの信号をホトカプラで豪はトラン
ジスタで増幅するものが知られている。
As a gate drive circuit for a MOS FET, for example, as shown in Hitachi Review Vol. 65 No. 4, page 39, there is a known one in which a signal from a control circuit is amplified using a photocoupler and a transistor.

また、高速応答化したMOS PETのゲート駆動回路
としてクリップ1フロップ回路をパルスランスでセット
、リセットする方式がおる。この方式のゲート駆動回路
は応答が速いのでPWM(パルス幅変調)制御のMOS
 FETインバータに適用した場合、制御性能の向上が
図れる。しかし、MOSFETのオン期間が非常に短か
くなる場合のゲート駆kJJ(ロ)路の動作については
配慮されていなかった。
There is also a method of setting and resetting a clip 1 flop circuit using a pulse lance as a gate drive circuit for a MOS PET with high-speed response. This type of gate drive circuit has a fast response, so it is a PWM (pulse width modulation) controlled MOS.
When applied to a FET inverter, control performance can be improved. However, no consideration was given to the operation of the gate drive circuit when the ON period of the MOSFET becomes very short.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、MOS  FETのオン期間、オフ期
間の長短に関係なく常時ゲート駆動回路を安定に動作で
きる制御方法を提供することにるる。
An object of the present invention is to provide a control method that allows a gate drive circuit to operate stably at all times regardless of the length of the on period and off period of a MOS FET.

〔発明の概要〕[Summary of the invention]

本発明の要点は、MOS今 FETのオン、オフ期間の
長短に左右されない一定値幅のセット信号、リセット信
号を発生するようにして、ゲート駆動回路の誤動作を防
止したことにろる。
The gist of the present invention is to prevent malfunction of the gate drive circuit by generating set and reset signals with constant value widths that are not affected by the length of the on/off period of the MOS FET.

〔発明の実施例〕[Embodiments of the invention]

第1図はMOS  FETのゲート駆動回路と本開明の
一実施例であるゲート駆動回路の制御回路を示したもの
でめる。
FIG. 1 shows a gate drive circuit for a MOS FET and a control circuit for the gate drive circuit which is an embodiment of the present invention.

図において、1は直流電源、2,3はMOSFET、4
.5はトランジスタ、6〜14は抵抗でるる。また、1
5はMOS  FETのオン、オフ信号入力端子、16
.17はクリップフロップ回路、18はクロツノパルス
入力端子、19はイクスクルーシブオア回M、20.2
1はアンド回路、22.23はパルストランス、24.
25はMOS  FET、26〜29は抵抗、30.3
1は直流電源の入力端子である。
In the figure, 1 is a DC power supply, 2 and 3 are MOSFETs, and 4
.. 5 is a transistor, and 6 to 14 are resistors. Also, 1
5 is a MOS FET on/off signal input terminal, 16
.. 17 is a clip-flop circuit, 18 is a black pulse input terminal, 19 is an exclusive OR circuit M, 20.2
1 is an AND circuit, 22.23 is a pulse transformer, 24.
25 is MOS FET, 26 to 29 are resistors, 30.3
1 is an input terminal of a DC power supply.

PWN1制御のイ/バータではMOS  FETのオン
オフ信号が非常に短かくなる場合がある。
In the PWN1 controlled in/verter, the on/off signal of the MOS FET may be very short.

すなわち、第2図で、インバータ出力電圧の基本周波数
を定める変調波信号Cとキャリア周波数を定める搬送波
信号Hとを比較し、電圧レベルが一致する時点でMOS
  FETのスイッチングを行なう。このような方式を
とるので、変調波信号Cと搬送波信号Hのタイミングに
よっては、MO8F E Tのオン、オフ期間が非常に
短かくなる場合がでてくる。
That is, in FIG. 2, the modulated wave signal C that determines the fundamental frequency of the inverter output voltage is compared with the carrier wave signal H that determines the carrier frequency, and when the voltage levels match, the MOS
Performs FET switching. Since such a method is adopted, depending on the timing of the modulated wave signal C and the carrier wave signal H, the on/off periods of the MO8FET may become extremely short.

第3図、第4図は第1図に示し友本発明の実施例の動作
説明図でろる。第3図はMOS  FETのオン期間が
クロックパルスの一周期より長い場合、jg4図はM 
OS  F E Tのオン期間がクロックパルスの一周
期よシ短かい場合の動作説明図である。第1図において
、スリップ・フロップ回路     116.17には
、たとえば、10 MHz 8度の高周波のクロックパ
ルスが入力される。フリップ・フロップ回路16.17
はクロックパルスがMO″から′1″に変化する時点で
セット、リセットされる。
3 and 4 are operation explanatory diagrams of the embodiment of the present invention shown in FIG. 1. Figure 3 shows that when the ON period of the MOS FET is longer than one cycle of the clock pulse, the jg4 diagram shows M
FIG. 6 is an explanatory diagram of the operation when the ON period of OS FET is shorter than one period of the clock pulse. In FIG. 1, a high frequency clock pulse of, for example, 10 MHz and 8 degrees is input to the slip-flop circuits 116 and 17. Flip-flop circuit 16.17
is set and reset when the clock pulse changes from MO'' to '1''.

k!、3図で、MOS  FETのオン、オフ信号が′
l″になった直後のクロックパルスが′O″から11″
に変化する時点から、アンド回路20の信号が出力され
る。このときの信号の幅はクロックパルスの一周期分の
O,lμsとなる。この信号により、パルストランス2
2から信号が出力され、MOS  FETのゲート駆動
回路はオン状態になろ。次に、t’vl OS  F 
E Tのオン、オフ信号が0”になると、直後のクロッ
クパルスが0”からl”に変化する時点からアンド回路
21の信号が出力される。このときの信号の幅は同様に
クロックパルスの1周期分の061μsとなる。この信
号によシ、パルストランス23から信号が出力されMO
SFETのゲート駆動回路はオフ状態になる。このよう
に、アンド回路20.21の出力信号幅はクロックパル
スで定まる一定値となるのでMOSFETのゲート駆動
回路は安定に動作する。
k! , In Figure 3, the MOS FET on and off signals are '
The clock pulse immediately after reaching l'' changes from 'O'' to 11''
The signal from the AND circuit 20 is output from the point in time when the value changes to . The width of the signal at this time is O, lμs for one cycle of the clock pulse. This signal causes pulse transformer 2
A signal is output from 2, and the gate drive circuit of the MOS FET turns on. Then t'vl OS F
When the ON/OFF signal of ET becomes 0'', the signal of the AND circuit 21 is output from the point at which the immediately following clock pulse changes from 0'' to 1.The width of the signal at this time is similarly the width of the clock pulse. This is 061 μs for one cycle. According to this signal, a signal is output from the pulse transformer 23 and the MO
The SFET gate drive circuit is turned off. In this way, since the output signal width of the AND circuits 20 and 21 is a constant value determined by the clock pulse, the MOSFET gate drive circuit operates stably.

第4図のMOS  FgTのオン期間がクロックパルス
の一周期より短かい場合は、MOSFETのオン、オフ
信号が“l”の間にクロックパルスがO″から“l″に
変ったときだけアンド回路20〜21に前述した一定値
幅の信号を出力する。
If the ON period of the MOS FgT in Figure 4 is shorter than one cycle of the clock pulse, the AND circuit is activated only when the clock pulse changes from O'' to “L” while the MOSFET ON/OFF signal is “L”. 20 to 21 output signals having a constant value width as described above.

従って、M OS  F E Tのオンオフ信号が′1
″の間にクロックパルスが“0“から′l#に変らない
ときには、アンド回路20.21から信号を出力しない
のでMOS  FETのゲート駆動回路は動作させない
ことになるが0.1μs程度の短時間なので、PWM制
御の性能には影響しない。
Therefore, the on/off signal of MOS FET is '1
If the clock pulse does not change from "0" to 'l#' during this period, the AND circuits 20 and 21 will not output any signals, so the gate drive circuit of the MOS FET will not operate, but for a short time of about 0.1 μs. Therefore, the performance of PWM control is not affected.

このように、第1図の回路方式はMOSFETのオン、
オフ期間が非常に短かくなる場合でも、安定した一定値
幅のオン信号、オフ信号をMOSFETのゲート駆動回
路に送ることができるので、ゲート連動回路の誤動作を
防止することができる。
In this way, the circuit system shown in Figure 1 turns on the MOSFET,
Even when the OFF period becomes very short, stable ON and OFF signals with a constant value width can be sent to the gate drive circuit of the MOSFET, so malfunction of the gate interlocking circuit can be prevented.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、MOSFETのオン、オフ期間の幅に
関係なく一定値幅のゲート駆動回路のオンオフ信号を送
ることができるので、ゲート駆動回路の誤動作を防止す
ることができる。
According to the present invention, it is possible to send an on/off signal of a constant value width to the gate drive circuit regardless of the width of the on/off period of the MOSFET, so that malfunction of the gate drive circuit can be prevented.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はMOSFETのゲート駆動回路と本発明のゲー
ト駆動回路の制御回路図、第2図はPWM制御の説明図
、第3図、第4図は第1図の回路の動作説明図である。 2.3・・・MOS  FET516.17・・・クリ
ップ・芳 /m
Fig. 1 is a control circuit diagram of a MOSFET gate drive circuit and the gate drive circuit of the present invention, Fig. 2 is an explanatory diagram of PWM control, and Figs. 3 and 4 are explanatory diagrams of the operation of the circuit of Fig. 1. . 2.3...MOS FET516.17...Clip Fold /m

Claims (1)

【特許請求の範囲】 1、MOSFETのゲート端子を順バイアスしてオンさ
せ、バイアスをなくしオフさせるゲート駆動回路の制御
方法において、 前記MOSFETを制御するオン・オフ信号を入力し、
クロックパルスで動作する第一のフリップ・フロップ回
路の出力信号を入力し、前記クロックパルスで動作する
第二のフリップ・フロップ回路の出力信号と、前記第一
のフリップ・フロップ回路の出力信号と前記第二のフリ
ップ・フロップ回路の出力信号とのイクスクルーシブオ
ア信号のアンド信号で前記MOSFETのゲート駆動回
路をオン状態にし、前記イクスクルーシブオア信号と前
記第二のフリップ・フロップ回路の出力信号とのアンド
信号で前記MOSFETのゲート駆動回路をオフ状態に
することを特徴とするゲート駆動回路の制御方法。
[Claims] 1. A method for controlling a gate drive circuit which forward biases a gate terminal of a MOSFET to turn it on and removes the bias to turn it off, comprising: inputting an on/off signal for controlling the MOSFET;
An output signal of a first flip-flop circuit that operates with a clock pulse is input, an output signal of a second flip-flop circuit that operates with the clock pulse, an output signal of the first flip-flop circuit, and the output signal of the first flip-flop circuit are input. The gate drive circuit of the MOSFET is turned on by the AND signal of the exclusive OR signal with the output signal of the second flip-flop circuit, and the exclusive OR signal and the output signal of the second flip-flop circuit are turned on. A method of controlling a gate drive circuit, characterized in that the gate drive circuit of the MOSFET is turned off by an AND signal.
JP20171684A 1984-09-28 1984-09-28 Controlling method of gate driving circuit Pending JPS6180914A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20171684A JPS6180914A (en) 1984-09-28 1984-09-28 Controlling method of gate driving circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20171684A JPS6180914A (en) 1984-09-28 1984-09-28 Controlling method of gate driving circuit

Publications (1)

Publication Number Publication Date
JPS6180914A true JPS6180914A (en) 1986-04-24

Family

ID=16445743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20171684A Pending JPS6180914A (en) 1984-09-28 1984-09-28 Controlling method of gate driving circuit

Country Status (1)

Country Link
JP (1) JPS6180914A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0746098A1 (en) * 1995-05-31 1996-12-04 STMicroelectronics S.r.l. Pulse generator, circuit and method for driving electronic devices, and corresponding applications
JP2003020763A (en) * 2001-07-10 2003-01-24 Asahi Kasei Corp Attaching construction for roof verge member

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0746098A1 (en) * 1995-05-31 1996-12-04 STMicroelectronics S.r.l. Pulse generator, circuit and method for driving electronic devices, and corresponding applications
US5760628A (en) * 1995-05-31 1998-06-02 Sgs-Thomson Microelectronics S.R.L. Circuit and method for generating pulses in response to the edges of an input signal
JP2003020763A (en) * 2001-07-10 2003-01-24 Asahi Kasei Corp Attaching construction for roof verge member

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