JPS617757B2 - - Google Patents
Info
- Publication number
- JPS617757B2 JPS617757B2 JP54113216A JP11321679A JPS617757B2 JP S617757 B2 JPS617757 B2 JP S617757B2 JP 54113216 A JP54113216 A JP 54113216A JP 11321679 A JP11321679 A JP 11321679A JP S617757 B2 JPS617757 B2 JP S617757B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11321679A JPS5637683A (en) | 1979-09-04 | 1979-09-04 | Semiconductor rectifying device |
GB8006652A GB2050694B (en) | 1979-05-07 | 1980-02-27 | Electrode structure for a semiconductor device |
NLAANVRAGE8001226,A NL188434C (nl) | 1979-05-07 | 1980-02-29 | Elektrodestructuur. |
DE19803008034 DE3008034A1 (de) | 1979-05-07 | 1980-03-03 | Elektrodenvorrichtung fuer eine halbleitervorrichtung |
FR8004965A FR2456389B1 (fr) | 1979-05-07 | 1980-03-05 | Structure d'electrodes pour dispositifs semi-conducteurs |
CA000347000A CA1150417A (en) | 1979-05-07 | 1980-03-05 | Electrode structure for a semiconductor device |
US06/512,942 US4587547A (en) | 1979-05-07 | 1983-07-12 | Electrode structure for a semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11321679A JPS5637683A (en) | 1979-09-04 | 1979-09-04 | Semiconductor rectifying device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14140185A Division JPS6139575A (ja) | 1985-06-27 | 1985-06-27 | 半導体整流装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5637683A JPS5637683A (en) | 1981-04-11 |
JPS617757B2 true JPS617757B2 (US07534539-20090519-C00280.png) | 1986-03-08 |
Family
ID=14606506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11321679A Granted JPS5637683A (en) | 1979-05-07 | 1979-09-04 | Semiconductor rectifying device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5637683A (US07534539-20090519-C00280.png) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63190704U (US07534539-20090519-C00280.png) * | 1987-05-27 | 1988-12-08 | ||
US9054066B2 (en) | 2012-08-30 | 2015-06-09 | Kabushiki Kaisha Toshiba | Semiconductor device |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4641174A (en) * | 1983-08-08 | 1987-02-03 | General Electric Company | Pinch rectifier |
DE3633161A1 (de) * | 1986-09-30 | 1988-04-07 | Licentia Gmbh | Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone |
JPH0642541B2 (ja) * | 1988-04-22 | 1994-06-01 | サンケン電気株式会社 | ショットキバリア半導体装置 |
JP2667477B2 (ja) * | 1988-12-02 | 1997-10-27 | 株式会社東芝 | ショットキーバリアダイオード |
JP3321070B2 (ja) | 1998-02-16 | 2002-09-03 | 旭光学工業株式会社 | 内視鏡の処置具挿入補助具とそれに用いられる処置具 |
JP4810776B2 (ja) * | 2001-08-03 | 2011-11-09 | 富士電機株式会社 | 半導体装置 |
JP2006295062A (ja) * | 2005-04-14 | 2006-10-26 | Rohm Co Ltd | 半導体装置 |
US7696598B2 (en) * | 2005-12-27 | 2010-04-13 | Qspeed Semiconductor Inc. | Ultrafast recovery diode |
US8634218B2 (en) | 2009-10-06 | 2014-01-21 | Power Integrations, Inc. | Monolithic AC/DC converter for generating DC supply voltage |
US8310845B2 (en) | 2010-02-10 | 2012-11-13 | Power Integrations, Inc. | Power supply circuit with a control terminal for different functional modes of operation |
CN108701722B (zh) * | 2016-02-29 | 2021-06-11 | 三菱电机株式会社 | 半导体装置 |
-
1979
- 1979-09-04 JP JP11321679A patent/JPS5637683A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63190704U (US07534539-20090519-C00280.png) * | 1987-05-27 | 1988-12-08 | ||
US9054066B2 (en) | 2012-08-30 | 2015-06-09 | Kabushiki Kaisha Toshiba | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5637683A (en) | 1981-04-11 |