JPS6176325U - - Google Patents
Info
- Publication number
- JPS6176325U JPS6176325U JP16156784U JP16156784U JPS6176325U JP S6176325 U JPS6176325 U JP S6176325U JP 16156784 U JP16156784 U JP 16156784U JP 16156784 U JP16156784 U JP 16156784U JP S6176325 U JPS6176325 U JP S6176325U
- Authority
- JP
- Japan
- Prior art keywords
- infrared sensor
- crystal
- electrode
- mesh
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
第１図は本考案の一実施例で、第１図ａは赤外
線センサの側断面図、第１図ｂは検出素子を示す
斜視図、第１図ｃは出力特性を示す図では入射
するパルス状赤外線、は赤外線センサの出力曲
線、第２図は従来の焦電型赤外線センサの一例で
、第２図ａは構造を示す側断面図、第２図ｂは出
力特性を示す図では入射するパルス状赤外線、
は赤外線センサの出力曲線、である。図におい
て
２はリード端子、３はベース、４はステージ、
５は突起、６はシリコン板、７は窓、８は金属製
ケース、９はワイヤ、１１は検出素子、１２は上
部電極、１３は下部電極、をそれぞれ表す。
Figure 1 shows an embodiment of the present invention, in which Figure 1a is a side cross-sectional view of an infrared sensor, Figure 1b is a perspective view of the detection element, and Figure 1c is a diagram showing the output characteristics of an incident pulse. Figure 2 is an example of a conventional pyroelectric infrared sensor, Figure 2a is a side sectional view showing the structure, and Figure 2b is a diagram showing the output characteristics. pulsed infrared,
is the output curve of the infrared sensor. In the figure, 2 is the lead terminal, 3 is the base, 4 is the stage,
5 represents a projection, 6 a silicon plate, 7 a window, 8 a metal case, 9 a wire, 11 a detection element, 12 an upper electrode, and 13 a lower electrode, respectively.
Claims (1)
成し、且つ該結晶の上面には網目状の上部電極を
形成してなることを特徴とする赤外線センサ。 An infrared sensor characterized in that a lower electrode is formed on the lower surface of a crystal made of a pyroelectric material, and a mesh-like upper electrode is formed on the upper surface of the crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16156784U JPS6176325U (en) | 1984-10-25 | 1984-10-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16156784U JPS6176325U (en) | 1984-10-25 | 1984-10-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6176325U true JPS6176325U (en) | 1986-05-22 |
Family
ID=30719471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16156784U Pending JPS6176325U (en) | 1984-10-25 | 1984-10-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6176325U (en) |
-
1984
- 1984-10-25 JP JP16156784U patent/JPS6176325U/ja active Pending