JPH03117838U - - Google Patents

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Publication number
JPH03117838U
JPH03117838U JP2671090U JP2671090U JPH03117838U JP H03117838 U JPH03117838 U JP H03117838U JP 2671090 U JP2671090 U JP 2671090U JP 2671090 U JP2671090 U JP 2671090U JP H03117838 U JPH03117838 U JP H03117838U
Authority
JP
Japan
Prior art keywords
lid
semiconductor device
conductive film
stem
mesh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2671090U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2671090U priority Critical patent/JPH03117838U/ja
Publication of JPH03117838U publication Critical patent/JPH03117838U/ja
Pending legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の第1実施例の縦方向の断面を
表わしている斜視図、第2図は本考案の第2実施
例の斜視図、第3図は従来の半導体装置の斜視図
である。 1,11……ステム、1a……金属ベース、1
b……セラミツク側壁、2……半導体素子、3…
…端子、4,5,14……蓋、4a,5a……網
目状の金属膜、6……AuSnろう材。
FIG. 1 is a perspective view showing a vertical cross section of a first embodiment of the present invention, FIG. 2 is a perspective view of a second embodiment of the present invention, and FIG. 3 is a perspective view of a conventional semiconductor device. be. 1, 11...Stem, 1a...Metal base, 1
b... Ceramic side wall, 2... Semiconductor element, 3...
...terminal, 4,5,14...lid, 4a, 5a...mesh-like metal film, 6...AuSn brazing material.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 上部開口を有するステムに半導体素子を取付け
、蓋をして封止してなる半導体装置において、前
記蓋は透明な板材で、かつその一面に網目状の導
体膜が形成され、さらにこの導体膜が接地電極に
接続されていることを特徴とする半導体装置。
In a semiconductor device in which a semiconductor element is attached to a stem having an upper opening and sealed with a lid, the lid is a transparent plate material, and a mesh-like conductive film is formed on one surface of the lid, and the conductive film is A semiconductor device characterized by being connected to a ground electrode.
JP2671090U 1990-03-15 1990-03-15 Pending JPH03117838U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2671090U JPH03117838U (en) 1990-03-15 1990-03-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2671090U JPH03117838U (en) 1990-03-15 1990-03-15

Publications (1)

Publication Number Publication Date
JPH03117838U true JPH03117838U (en) 1991-12-05

Family

ID=31529591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2671090U Pending JPH03117838U (en) 1990-03-15 1990-03-15

Country Status (1)

Country Link
JP (1) JPH03117838U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087469A (en) * 2008-09-08 2010-04-15 Toshiba Corp High frequency package device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087469A (en) * 2008-09-08 2010-04-15 Toshiba Corp High frequency package device and manufacturing method thereof

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